Showing 2893–2904 of 7598 results
Micro Commercial Co SI3404-TP
In stock
| Manufacturer |
Micro Commercial Co |
|---|---|
| Factory Lead Time |
22 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Current - Continuous Drain (Id) @ 25℃ |
5.8A |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
350mW |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 5.8A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
820pF @ 15V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Micro Commercial Co SI3420-TP
In stock
| Manufacturer |
Micro Commercial Co |
|---|---|
| Part Status |
Active |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 10V |
| Power Dissipation (Max) |
350mW Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Factory Lead Time |
12 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| ECCN Code |
EAR99 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
24m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
630pF @ 10V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| RoHS Status |
ROHS3 Compliant |
Micro Commercial Components 2N7002KDWBQ-TP
In stock
| Manufacturer |
Micro Commercial Components |
|---|---|
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
220 mA |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
240 mW |
| Qg - Gate Charge |
1.75 nC |
| Rds On - Drain-Source Resistance |
1.3 Ohms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
60 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
1.5 V |
| Series |
SS-AECQ |
| Technology |
Si |
| Number of Channels |
1 Channel |
Micro Commercial Components MCG40N10YHE3-TP
In stock
| Manufacturer |
Micro Commercial Components |
|---|---|
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
40 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
43 W |
| Qg - Gate Charge |
16 nC |
| Rds On - Drain-Source Resistance |
17 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
100 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
1.8 V |
| Technology |
Si |
| Number of Channels |
1 Channel |
Micro Commercial Components MCU01N60A-TP
In stock
| Manufacturer |
Micro Commercial Components |
|---|---|
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
1.3 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
37.8 W |
| Qg - Gate Charge |
6 nC |
| Rds On - Drain-Source Resistance |
7 Ohms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
600 V |
| Vgs - Gate-Source Voltage |
– 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage |
3.4 V |
| Technology |
Si |
| Number of Channels |
1 Channel |
Microchip APT106N60B2C6
In stock
| Manufacturer |
Microchip |
|---|---|
| Package |
Tube |
| Surface Mount |
NO |
| Supplier Device Package |
T-MAX™ [B2] |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Base Product Number |
APT106 |
| Continuous Drain Current Id |
106 |
| Drain Current-Max (ID) |
106 A |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Ihs Manufacturer |
MICROSEMI CORP |
| Manufacturer Part Number |
APT106N60B2C6 |
| Mfr |
Microchip Technology |
| ECCN Code |
EAR99 |
| Operating Temperature-Max |
150 °C |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
TMAX-3 |
| Package Shape |
RECTANGULAR |
| Package Style |
IN-LINE |
| Part Life Cycle Code |
Active |
| Power Dissipation (Max) |
833W (Tc) |
| Product Status |
Active |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
2.42 |
| Rohs Code |
No |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Series |
CoolMOS™ |
| Package / Case |
TO-247-3 Variant |
| Mounting Type |
Through Hole |
| Transistor Application |
SWITCHING |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
833 |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
35mOhm @ 53A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 3.4mA |
| Technology |
MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds |
8390 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
106A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
308 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
600 V |
| Vgs (Max) |
±20V |
| Polarity/Channel Type |
N-CHANNEL |
| Drain-source On Resistance-Max |
0.035 Ω |
| Pulsed Drain Current-Max (IDM) |
318 A |
| DS Breakdown Voltage-Min |
600 V |
| Channel Type |
N |
| Avalanche Energy Rating (Eas) |
2200 mJ |
| Terminal Form |
THROUGH-HOLE |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
Microchip APT34F100B2
In stock
| Manufacturer |
Microchip |
|---|---|
| Minimum Operating Temperature |
– 55 C |
| Supplier Device Package |
T-MAX™ [B2] |
| Mounting Style |
Through Hole |
| Base Product Number |
APT34F100 |
| Channel Mode |
Enhancement |
| Continuous Drain Current Id |
35 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Id - Continuous Drain Current |
35 A |
| Maximum Operating Temperature |
+ 150 C |
| Vgs th - Gate-Source Threshold Voltage |
2.5 V |
| Mfr |
Microchip Technology |
| Package |
Tube |
| Pd - Power Dissipation |
1.135 kW |
| Power Dissipation (Max) |
1135W (Tc) |
| Product Status |
Active |
| Qg - Gate Charge |
305 nC |
| Rds On - Drain-Source Resistance |
320 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
1 kV |
| Vgs - Gate-Source Voltage |
– 30 V, + 30 V |
| Package / Case |
TO-247-3 Variant |
| Mounting Type |
Through Hole |
| Power Dissipation |
1.135 |
| Series |
POWER MOS 8™ |
| Temperature Coefficient |
100 ppm/°C |
| Resistance |
6.19 kΩ |
| Max Operating Temperature |
155 °C |
| Min Operating Temperature |
-55 °C |
| Composition |
Thin Film |
| Power Rating |
100 mW |
| Technology |
MOSFET (Metal Oxide) |
| Number of Channels |
1 Channel |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
380mOhm @ 18A, 10V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Vgs(th) (Max) @ Id |
5V @ 2.5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
9835 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
35A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
305 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
1000 V |
| Vgs (Max) |
±30V |
| Channel Type |
N |
| Voltage Rating |
50 V |
| Tolerance |
1 % |
| Height |
550 µm |