Showing 2905–2916 of 7598 results
Microchip APT60M75JVR
In stock
| Manufacturer |
Microchip |
|---|---|
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Supplier Device Package |
ISOTOP® |
| Base Product Number |
APT60M75 |
| Brand |
Microchip Technology |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Factory Pack Quantity:Factory Pack Quantity |
1 |
| Mfr |
Microchip Technology |
| Package |
Tube |
| Power Dissipation (Max) |
700W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
POWER MOS V® |
| Subcategory |
Discrete Semiconductor Modules |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
75mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
19800 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
62A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
1050 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
600 V |
| Vgs (Max) |
±30V |
| Product Type |
Discrete Semiconductor Modules |
| Product Category |
Discrete Semiconductor Modules |
Microchip APT8020JFLL
In stock
| Manufacturer |
Microchip |
|---|---|
| Id - Continuous Drain Current |
33 A |
| Rds On - Drain-Source Resistance |
220 mOhms |
| Product Status |
Active |
| Pd - Power Dissipation |
520 W |
| Package |
Tube |
| Minimum Operating Temperature |
– 55 C |
| Mfr |
Microchip Technology |
| Transistor Polarity |
N-Channel |
| Maximum Operating Temperature |
+ 150 C |
| Factory Pack Quantity:Factory Pack Quantity |
1 |
| Brand |
Microchip Technology |
| Base Product Number |
APT8020 |
| Mounting Style |
Chassis Mount |
| Supplier Device Package |
ISOTOP® |
| Package / Case |
SOT-227-4, miniBLOC |
| Mounting Type |
Chassis Mount |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs |
220mOhm @ 16.5A, 10V |
| Product Type |
Discrete Semiconductor Modules |
| Drain to Source Voltage (Vdss) |
800 V |
| Gate Charge (Qg) (Max) @ Vgs |
195 nC @ 10 V |
| Current - Continuous Drain (Id) @ 25°C |
33A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds |
5200 pF @ 25 V |
| Vgs(th) (Max) @ Id |
5V @ 2.5mA |
| FET Type |
N-Channel |
| Vgs - Gate-Source Voltage |
– 30 V, + 30 V |
| Number of Channels |
1 Channel |
| Configuration |
Single |
| Technology |
MOSFET (Metal Oxide) |
| Subcategory |
Discrete Semiconductor Modules |
| Series |
POWER MOS 7® |
| Packaging |
Tube |
| Product Category |
Discrete Semiconductor Modules |
Microchip Technology 2N6661
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Power Dissipation (Max) |
6.25W Tc |
| Contact Plating |
Gold |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-205AD, TO-39-3 Metal Can |
| Number of Pins |
3 |
| Supplier Device Package |
TO-39 |
| Current - Continuous Drain (Id) @ 25℃ |
350mA Tj |
| Min Operating Temperature |
-55°C |
| Factory Lead Time |
14 Weeks |
| Turn Off Delay Time |
10 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2010 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
350mA |
| Threshold Voltage |
800mV |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 24V |
| Drain to Source Voltage (Vdss) |
90V |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Power Dissipation |
6.25W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
90V |
| Input Capacitance |
50pF |
| Drain to Source Resistance |
4Ohm |
| Rds On Max |
4 Ω |
| Ambient Temperature Range High |
150°C |
| Height |
6.604mm |
| RoHS Status |
Non-RoHS Compliant |
Microchip Technology DN1509K1-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Power Dissipation (Max) |
490mW Ta |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-74A, SOT-753 |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Mount |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Rds On (Max) @ Id, Vgs |
6 Ω @ 200mA, 0V |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
490mW |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Input Capacitance (Ciss) (Max) @ Vds |
150pF @ 25V |
| Drain to Source Voltage (Vdss) |
90V |
| Terminal Finish |
Matte Tin (Sn) |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
200mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.2A |
| Drain-source On Resistance-Max |
6Ohm |
| FET Feature |
Depletion Mode |
| Terminal Form |
GULL WING |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology DN1509N8-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Number of Pins |
3 |
| Weight |
52.786812mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
360mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.6W Ta |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Turn Off Delay Time |
15 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Fall Time (Typ) |
16 ns |
| Element Configuration |
Single |
| Power Dissipation |
1.6W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6 Ω @ 200mA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds |
150pF @ 25V |
| Rise Time |
16ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
360mA |
| Gate to Source Voltage (Vgs) |
20V |
| Number of Channels |
1 |
| Drain-source On Resistance-Max |
6Ohm |
| Drain to Source Breakdown Voltage |
90V |
| FET Feature |
Depletion Mode |
| Height |
1.6mm |
| Length |
4.6mm |
| Width |
2.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Microchip Technology DN2450K4-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Terminal Position |
SINGLE |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
350mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| Number of Elements |
1 |
| Turn Off Delay Time |
15 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
2.5W Ta |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW THRESHOLD |
| HTS Code |
8541.90.00.00 |
| Contact Plating |
Tin |
| Factory Lead Time |
10 Weeks |
| Rise Time |
20ns |
| Vgs (Max) |
±20V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
2.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10 Ω @ 300mA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 25V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
350mA |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
1A |
| FET Feature |
Depletion Mode |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Lead Free |
Microchip Technology DN2450N8-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Power Dissipation (Max) |
1.6W Ta |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Number of Pins |
3 |
| Weight |
52.786812mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
230mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| Terminal Finish |
Matte Tin (Sn) |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Factory Lead Time |
9 Weeks |
| Rds On (Max) @ Id, Vgs |
10 Ω @ 300mA, 0V |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
1.6W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 25V |
| Vgs (Max) |
±20V |
| Additional Feature |
LOW THRESHOLD |
| Continuous Drain Current (ID) |
230mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
0.9A |
| FET Feature |
Depletion Mode |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Terminal Form |
FLAT |
| Lead Free |
Lead Free |