Showing 2917–2928 of 7598 results
Microchip Technology DN2530N3-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Turn Off Delay Time |
15 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
175mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| Number of Elements |
1 |
| Terminal Position |
BOTTOM |
| Factory Lead Time |
6 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Power Dissipation (Max) |
740mW Ta |
| Terminal Form |
WIRE |
| Continuous Drain Current (ID) |
175mA |
| Gate to Source Voltage (Vgs) |
20V |
| Power Dissipation |
740mW |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12 Ω @ 150mA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
| Rise Time |
15ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Drain to Source Breakdown Voltage |
300V |
| FET Feature |
Depletion Mode |
| Feedback Cap-Max (Crss) |
5 pF |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Microchip Technology DN2535N3-G-P013
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Box (TB) |
| Published |
2013 |
| Part Status |
Active |
| Factory Lead Time |
5 Weeks |
| ECCN Code |
EAR99 |
| Number of Terminations |
3 |
| Terminal Position |
BOTTOM |
| JESD-30 Code |
O-PBCY-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
25 Ω @ 120mA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120mA |
| Drain to Source Breakdown Voltage |
350V |
| FET Feature |
Depletion Mode |
| Feedback Cap-Max (Crss) |
5 pF |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology DN2540N3-G-P003
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Terminal Position |
BOTTOM |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| Power Dissipation (Max) |
1W Tc |
| Turn Off Delay Time |
15 ns |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
5 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
25 Ω @ 120mA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
400V |
| Number of Channels |
1 |
| JESD-30 Code |
O-PBCY-T3 |
| Continuous Drain Current (ID) |
120mA |
| Gate to Source Voltage (Vgs) |
20V |
| FET Feature |
Depletion Mode |
| Feedback Cap-Max (Crss) |
5 pF |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology DN2540N8-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Power Dissipation (Max) |
1.6W Tc |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Number of Pins |
3 |
| Weight |
52.786812mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
170mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| Terminal Form |
FLAT |
| Factory Lead Time |
5 Weeks |
| Turn Off Delay Time |
15 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW THRESHOLD |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
260 |
| Rise Time |
15ns |
| Vgs (Max) |
±20V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Power Dissipation |
1.6W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
25 Ω @ 120mA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Qualification Status |
Not Qualified |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
170mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
400V |
| Pulsed Drain Current-Max (IDM) |
0.5A |
| FET Feature |
Depletion Mode |
| Height |
1.6mm |
| Length |
4.6mm |
| Width |
2.6mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Microchip Technology DN2625K4-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.1A Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
10 ns |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW THRESHOLD |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
19 Weeks |
| Rise Time |
20ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.5 Ω @ 1A, 0V |
| Input Capacitance (Ciss) (Max) @ Vds |
1000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
7.04nC @ 1.5V |
| Qualification Status |
Not Qualified |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
1.1A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
250V |
| FET Feature |
Depletion Mode |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.1mm |
| Number of Channels |
1 |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology DN3135K1-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
72mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360mW Ta |
| Terminal Form |
GULL WING |
| Turn Off Delay Time |
15 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Power Dissipation |
360mW |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
35 Ω @ 150mA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds |
120pF @ 25V |
| Rise Time |
15ns |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
72mA |
| Peak Reflow Temperature (Cel) |
260 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.072A |
| Drain to Source Breakdown Voltage |
350V |
| FET Feature |
Depletion Mode |
| Height |
950μm |
| Length |
2.9mm |
| Width |
1.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
Microchip Technology DN3545N3-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
740mW Ta |
| Terminal Form |
WIRE |
| Factory Lead Time |
6 Weeks |
| Packaging |
Bulk |
| Published |
2010 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH INPUT IMPEDANCE |
| Terminal Position |
BOTTOM |
| Turn Off Delay Time |
30 ns |
| Peak Reflow Temperature (Cel) |
NOT APPLICABLE |
| Drain to Source Voltage (Vdss) |
450V |
| Vgs (Max) |
±20V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Power Dissipation |
740mW |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
20 Ω @ 150mA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds |
360pF @ 25V |
| Rise Time |
30ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT APPLICABLE |
| Qualification Status |
Not Qualified |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
136mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
450V |
| FET Feature |
Depletion Mode |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Microchip Technology LND01K1-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Terminal Finish |
Matte Tin (Sn) |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-74A, SOT-753 |
| Number of Pins |
5 |
| Weight |
29.993795mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
330mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| Power Dissipation (Max) |
360mW Ta |
| Turn Off Delay Time |
1 ns |
| Number of Elements |
1 |
| Operating Temperature |
-25°C~125°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
46pF @ 5V |
| Rise Time |
11ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Power Dissipation |
360mW |
| Turn On Delay Time |
3.8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 100mA, 0V |
| Terminal Form |
GULL WING |
| Terminal Position |
DUAL |
| Vgs (Max) |
+0.6V, -12V |
| Fall Time (Typ) |
6.4 ns |
| Continuous Drain Current (ID) |
330mA |
| Gate to Source Voltage (Vgs) |
600mV |
| Drain Current-Max (Abs) (ID) |
0.33A |
| Drain to Source Breakdown Voltage |
9V |
| FET Feature |
Depletion Mode |
| RoHS Status |
ROHS3 Compliant |
| Peak Reflow Temperature (Cel) |
260 |
| Lead Free |
Lead Free |
Microchip Technology LND150N3-G-P013
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Power Dissipation (Max) |
740mW Ta |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| Terminal Position |
BOTTOM |
| Factory Lead Time |
8 Weeks |
| Turn Off Delay Time |
100 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Box (TB) |
| Published |
2014 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Number of Elements |
1 |
| JESD-30 Code |
O-PBCY-T3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
1.3 μs |
| Turn On Delay Time |
90 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1000 Ω @ 500μA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds |
10pF @ 25V |
| Rise Time |
450ns |
| Drain to Source Voltage (Vdss) |
500V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
30mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.03A |
| DS Breakdown Voltage-Min |
500V |
| FET Feature |
Depletion Mode |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology LP0701N3-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Terminal Position |
BOTTOM |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
500mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
2V 5V |
| Number of Elements |
1 |
| Turn Off Delay Time |
30 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
1W Tc |
| Packaging |
Bulk |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
30 ns |
| Power Dissipation |
1W |
| Turn On Delay Time |
20 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 300mA, 5V |
| Vgs(th) (Max) @ Id |
1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
250pF @ 15V |
| Rise Time |
20ns |
| Drain to Source Voltage (Vdss) |
16.5V |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
500mA |
| Gate to Source Voltage (Vgs) |
10V |
| Drain Current-Max (Abs) (ID) |
0.5A |
| Drain to Source Breakdown Voltage |
-16.5V |
| Feedback Cap-Max (Crss) |
60 pF |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| Radiation Hardening |
No |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology MCP87022T-U/MF
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.2W Ta |
| Turn Off Delay Time |
21 ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
11 Weeks |
| Vgs (Max) |
+10V, -8V |
| Element Configuration |
Single |
| Turn On Delay Time |
7.6 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.3m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
1.6V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2310pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 4.5V |
| Rise Time |
27ns |
| Fall Time (Typ) |
17 ns |
| Continuous Drain Current (ID) |
100A |
| Base Part Number |
MCP87022 |
| Gate to Source Voltage (Vgs) |
10V |
| Drain to Source Breakdown Voltage |
25V |
| Nominal Vgs |
1.3 V |
| Height |
1mm |
| Length |
5mm |
| Width |
6mm |
| REACH SVHC |
No SVHC |
| Power Dissipation |
2.2W |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology MCP87050T-U/MF
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.2W Ta |
| Turn Off Delay Time |
11 ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
5 Weeks |
| Vgs (Max) |
+10V, -8V |
| Element Configuration |
Single |
| Turn On Delay Time |
5 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
1.6V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1040pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 4.5V |
| Rise Time |
18ns |
| Continuous Drain Current (ID) |
100A |
| Gate to Source Voltage (Vgs) |
10V |
| Base Part Number |
MCP87050 |
| Drain to Source Breakdown Voltage |
25V |
| Nominal Vgs |
1.3 V |
| Height |
1mm |
| Length |
5mm |
| Width |
6mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
2.2W |
| Lead Free |
Lead Free |