Showing 2929–2940 of 7598 results
Microchip Technology MCP87090T-U/LC
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Base Part Number |
MCP87090 |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
48A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1.8W Ta |
| Turn Off Delay Time |
5.3 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
11 Weeks |
| Continuous Drain Current (ID) |
48A |
| Gate to Source Voltage (Vgs) |
10V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
10.5m Ω @ 10V |
| Vgs(th) (Max) @ Id |
1.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
580pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 4.5V |
| Rise Time |
9.3ns |
| Vgs (Max) |
+10V, -8V |
| Fall Time (Typ) |
2.9 ns |
| Power Dissipation |
1.8W |
| Element Configuration |
Single |
| Drain Current-Max (Abs) (ID) |
50A |
| Drain to Source Breakdown Voltage |
25V |
| Nominal Vgs |
1.35 V |
| Height |
1mm |
| Length |
3.3mm |
| Width |
3.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
2.5 ns |
| Lead Free |
Lead Free |
Microchip Technology MCP87130T-U/LC
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Base Part Number |
MCP87130 |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
43A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
3.3V 10V |
| Power Dissipation (Max) |
1.7W Ta |
| Turn Off Delay Time |
4.2 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
11 Weeks |
| Continuous Drain Current (ID) |
42A |
| Gate to Source Voltage (Vgs) |
10V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
13.5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
1.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
400pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
8nC @ 4.5V |
| Rise Time |
5.4ns |
| Vgs (Max) |
+10V, -8V |
| Fall Time (Typ) |
2.1 ns |
| Power Dissipation |
1.8W |
| Element Configuration |
Single |
| Drain Current-Max (Abs) (ID) |
43A |
| Drain to Source Breakdown Voltage |
25V |
| Nominal Vgs |
1.35 V |
| Height |
1mm |
| Length |
3.3mm |
| Width |
3.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
2.2 ns |
| Lead Free |
Lead Free |
Microchip Technology MCP87130T-U/MF
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
43A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
3.3V 10V |
| Power Dissipation (Max) |
2.1W Ta |
| Turn Off Delay Time |
4.2 ns |
| Base Part Number |
MCP87130 |
| Factory Lead Time |
11 Weeks |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Operating Temperature |
-55°C~150°C TJ |
| Configuration |
Single |
| Continuous Drain Current (ID) |
54A |
| Threshold Voltage |
1.35V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
13.5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
1.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
400pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
8nC @ 4.5V |
| Rise Time |
5.4ns |
| Vgs (Max) |
+10V, -8V |
| Fall Time (Typ) |
2.1 ns |
| Power Dissipation |
2.2W |
| Turn On Delay Time |
2.2 ns |
| Gate to Source Voltage (Vgs) |
10V |
| Drain Current-Max (Abs) (ID) |
43A |
| Drain to Source Breakdown Voltage |
25V |
| Nominal Vgs |
1.35 V |
| Height |
1mm |
| Length |
5mm |
| Width |
6mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Microchip Technology MIC94030BM4 TR
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
TO-253-4, TO-253AA |
| Supplier Device Package |
SOT-143 |
| Current - Continuous Drain (Id) @ 25℃ |
1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.7V 10V |
| Power Dissipation (Max) |
568mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Series |
TinyFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
MIC94030 |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
450mOhm @ 100mA, 10V |
| Vgs(th) (Max) @ Id |
1.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 12V |
| Drain to Source Voltage (Vdss) |
16V |
| Vgs (Max) |
16V |
| RoHS Status |
Non-RoHS Compliant |
Microchip Technology MIC94050YM4-TR
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Power Dissipation (Max) |
568mW Ta |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-253-4, TO-253AA |
| Number of Pins |
4 |
| Supplier Device Package |
SOT-143 |
| Current - Continuous Drain (Id) @ 25℃ |
1.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Min Operating Temperature |
-40°C |
| Factory Lead Time |
7 Weeks |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Series |
SymFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
160mOhm |
| Max Operating Temperature |
150°C |
| Number of Elements |
1 |
| Voltage - Rated DC |
-6V |
| Vgs (Max) |
6V |
| Continuous Drain Current (ID) |
1.8A |
| Element Configuration |
Single |
| Power Dissipation |
568mW |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
160mOhm @ 100mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
600pF @ 5.5V |
| Drain to Source Voltage (Vdss) |
6V |
| Current Rating |
-1.8A |
| Base Part Number |
MIC94050 |
| Gate to Source Voltage (Vgs) |
6V |
| Input Capacitance |
600pF |
| Drain to Source Resistance |
320mOhm |
| Rds On Max |
160 mΩ |
| Height |
1.02mm |
| Length |
2.92mm |
| Width |
1.3mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Microchip Technology MIC94053YC6-TR
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Turn Off Delay Time |
60 ns |
| Mounting Type |
Surface Mount |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
| Number of Pins |
6 |
| Supplier Device Package |
SC-70-6 |
| Current - Continuous Drain (Id) @ 25℃ |
2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Current Rating |
-2A |
| Power Dissipation (Max) |
270mW Ta |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
-6V |
| Mount |
Surface Mount |
| Factory Lead Time |
7 Weeks |
| Threshold Voltage |
-1.2V |
| Element Configuration |
Single |
| Turn On Delay Time |
15 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
84mOhm @ 100mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Drain to Source Voltage (Vdss) |
6V |
| Vgs (Max) |
6V |
| Continuous Drain Current (ID) |
2A |
| Gate to Source Voltage (Vgs) |
6V |
| Drain to Source Resistance |
180mOhm |
| Base Part Number |
MIC94053 |
| Rds On Max |
84 mΩ |
| Height |
1mm |
| Length |
2.2mm |
| Width |
1.35mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
270mW |
| Lead Free |
Lead Free |
Microchip Technology TN0104N3-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Turn Off Delay Time |
6 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
219.992299mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
450mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 10V |
| Number of Elements |
1 |
| Additional Feature |
LOW THRESHOLD |
| Power Dissipation (Max) |
1W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Mount |
Through Hole |
| Factory Lead Time |
9 Weeks |
| Rise Time |
7ns |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1W |
| Turn On Delay Time |
3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.8 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
1.6V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
70pF @ 20V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Terminal Position |
BOTTOM |
| Continuous Drain Current (ID) |
450mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.45A |
| Drain to Source Breakdown Voltage |
40V |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| Radiation Hardening |
No |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology TN0104N3-G-P003
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Turn Off Delay Time |
6 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
450mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 10V |
| Number of Elements |
1 |
| JESD-30 Code |
O-PBCY-T3 |
| Power Dissipation (Max) |
1W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| Mount |
Through Hole |
| Factory Lead Time |
9 Weeks |
| Drain to Source Voltage (Vdss) |
40V |
| Element Configuration |
Single |
| Turn On Delay Time |
3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.8 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
1.6V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
70pF @ 20V |
| Rise Time |
7ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
450mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.45A |
| DS Breakdown Voltage-Min |
40V |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology TN0104N3-G-P014
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Power Dissipation (Max) |
1W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
450mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 10V |
| Terminal Position |
BOTTOM |
| Factory Lead Time |
6 Weeks |
| Turn Off Delay Time |
6 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Box (TB) |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| JESD-30 Code |
O-PBCY-T3 |
| Rise Time |
7ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.8 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
1.6V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
70pF @ 20V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
450mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.45A |
| Drain to Source Breakdown Voltage |
40V |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology TN0106N3-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Terminal Position |
BOTTOM |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
350mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1W Tc |
| Turn Off Delay Time |
6 ns |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Contact Plating |
Tin |
| Factory Lead Time |
8 Weeks |
| Fall Time (Typ) |
3 ns |
| Continuous Drain Current (ID) |
350mA |
| Power Dissipation |
1W |
| Turn On Delay Time |
2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
60pF @ 25V |
| Rise Time |
3ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
3Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Feedback Cap-Max (Crss) |
8 pF |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Microchip Technology TN0604N3-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Terminal Position |
BOTTOM |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
700mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
25 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
740mW Ta |
| Packaging |
Bulk |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH INPUT IMPEDANCE |
| Mount |
Through Hole |
| Factory Lead Time |
6 Weeks |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
700mA |
| Power Dissipation |
740mW |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
750m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
1.6V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
190pF @ 20V |
| Rise Time |
6ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.7A |
| Drain-source On Resistance-Max |
0.75Ohm |
| Drain to Source Breakdown Voltage |
40V |
| Feedback Cap-Max (Crss) |
50 pF |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| Radiation Hardening |
No |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology TN0604N3-G-P005
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Number of Elements |
1 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
700mA Tj |
| ECCN Code |
EAR99 |
| Factory Lead Time |
6 Weeks |
| Power Dissipation (Max) |
740mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Additional Feature |
HIGH INPUT IMPEDANCE |
| Vgs(th) (Max) @ Id |
1.6V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
190pF @ 20V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
750m Ω @ 1.5A, 10V |
| Terminal Position |
BOTTOM |
| JESD-30 Code |
O-PBCY-T3 |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
700mA |
| Drain Current-Max (Abs) (ID) |
0.7A |
| Drain-source On Resistance-Max |
0.75Ohm |
| DS Breakdown Voltage-Min |
40V |
| Feedback Cap-Max (Crss) |
50 pF |
| RoHS Status |
ROHS3 Compliant |