Showing 2941–2952 of 7598 results
Microchip Technology TN0606N3-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Turn Off Delay Time |
16 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
500mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 10V |
| Number of Elements |
1 |
| Additional Feature |
LOW THRESHOLD |
| Factory Lead Time |
20 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Power Dissipation (Max) |
1W Tc |
| Terminal Position |
BOTTOM |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
16 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1W |
| Turn On Delay Time |
6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 750mA, 10V |
| Vgs(th) (Max) @ Id |
2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
150pF @ 25V |
| Rise Time |
14ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
500mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.5A |
| Drain-source On Resistance-Max |
2Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology TN0620N3-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Turn Off Delay Time |
20 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
219.992299mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
250mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Additional Feature |
LOW THRESHOLD |
| Factory Lead Time |
6 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Power Dissipation (Max) |
1W Tc |
| Terminal Position |
BOTTOM |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1W |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
1.6V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
150pF @ 25V |
| Rise Time |
8ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
250mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.25A |
| Drain-source On Resistance-Max |
6Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology TN2106N3-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Turn Off Delay Time |
6 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
300mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Terminal Position |
BOTTOM |
| Factory Lead Time |
6 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Power Dissipation (Max) |
740mW Tc |
| Peak Reflow Temperature (Cel) |
NOT APPLICABLE |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
| Rise Time |
5ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
740mW |
| Turn On Delay Time |
3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2V @ 1mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT APPLICABLE |
| Qualification Status |
Not Qualified |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
300mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Feedback Cap-Max (Crss) |
65 pF |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology TN2435N8-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Number of Pins |
4 |
| Weight |
52.786812mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
365mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.6W Ta |
| Terminal Form |
FLAT |
| Factory Lead Time |
6 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
10Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Turn Off Delay Time |
28 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs(th) (Max) @ Id |
2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 25V |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.6W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6 Ω @ 750mA, 10V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| JESD-30 Code |
R-PSSO-F3 |
| Rise Time |
10ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
365mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.365A |
| Drain to Source Breakdown Voltage |
350V |
| Height |
1.6mm |
| Length |
4.6mm |
| Width |
2.6mm |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology TN2504N8-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Number of Pins |
4 |
| Weight |
52.786812mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
890mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.6W Tc |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
8 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Form |
FLAT |
| Turn Off Delay Time |
25 ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Input Capacitance (Ciss) (Max) @ Vds |
125pF @ 20V |
| Rise Time |
10ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.6W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
1.6V @ 1mA |
| JESD-30 Code |
R-PSSO-F3 |
| Qualification Status |
Not Qualified |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
890mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.89A |
| Drain-source On Resistance-Max |
1Ohm |
| Drain to Source Breakdown Voltage |
40V |
| Height |
1.6mm |
| Length |
4.6mm |
| Width |
2.6mm |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology TN2510N8-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| JESD-30 Code |
R-PSSO-F3 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Number of Pins |
4 |
| Weight |
52.786812mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
730mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
20 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
1.6W Ta |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
730mA |
| Power Dissipation |
1.6W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 750mA, 10V |
| Vgs(th) (Max) @ Id |
2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
125pF @ 25V |
| Rise Time |
10ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.73A |
| Drain-source On Resistance-Max |
2Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
5A |
| Height |
1.6mm |
| Length |
4.6mm |
| Width |
2.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Microchip Technology TN2640K4-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
500mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Turn Off Delay Time |
20 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Factory Lead Time |
7 Weeks |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Qualification Status |
Not Qualified |
| Rise Time |
15ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2V @ 2mA |
| Input Capacitance (Ciss) (Max) @ Vds |
225pF @ 25V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
2A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.5A |
| Drain-source On Resistance-Max |
5Ohm |
| Drain to Source Breakdown Voltage |
400V |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.1mm |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology TN5325N8-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Published |
2009 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Number of Pins |
4 |
| Weight |
52.786812mg |
| Current - Continuous Drain (Id) @ 25℃ |
316mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.6W Ta |
| Turn Off Delay Time |
25 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Additional Feature |
FAST SWITCHING |
| Terminal Form |
FLAT |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Vgs(th) (Max) @ Id |
2V @ 1mA |
| JESD-30 Code |
R-PSSO-F3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.6W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7 Ω @ 1A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
110pF @ 25V |
| Rise Time |
15ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
316mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
250Ohm |
| Drain to Source Breakdown Voltage |
250V |
| Height |
1.6mm |
| Length |
4.6mm |
| Width |
2.6mm |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology TN5335N8-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Weight |
52.786812mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
230mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.6W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
25 ns |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Form |
FLAT |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Vgs(th) (Max) @ Id |
2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
110pF @ 25V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.6W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15 Ω @ 200mA, 10V |
| JESD-30 Code |
R-PSSO-F3 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Rise Time |
15ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
230mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
350V |
| Height |
1.6mm |
| Length |
4.6mm |
| Width |
2.6mm |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology TP0606N3-G-P002
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Turn Off Delay Time |
20 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
320mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| JESD-30 Code |
O-PBCY-T3 |
| Factory Lead Time |
6 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
BOTTOM |
| Power Dissipation (Max) |
1W Tc |
| Number of Channels |
1 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Turn On Delay Time |
10 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.5 Ω @ 750mA, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
150pF @ 25V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
60V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
320mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.32A |
| Drain to Source Breakdown Voltage |
-60V |
| Feedback Cap-Max (Crss) |
35 pF |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology TP0610T-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Power Dissipation (Max) |
360mW Ta |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Terminal Position |
DUAL |
| Factory Lead Time |
15 Weeks |
| Turn Off Delay Time |
15 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW THRESHOLD |
| Number of Elements |
1 |
| Terminal Form |
GULL WING |
| Input Capacitance (Ciss) (Max) @ Vds |
60pF @ 25V |
| Rise Time |
15ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
360mW |
| Turn On Delay Time |
10 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10 Ω @ 200mA, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
120mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-60V |
| Height |
930μm |
| Length |
2.92mm |
| Width |
1.3mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology TP2435N8-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Turn Off Delay Time |
25 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Number of Pins |
4 |
| Weight |
52.786812mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
231mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 10V |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
6 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
FLAT |
| Power Dissipation (Max) |
1.6W Ta |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 25V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.6W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15 Ω @ 500mA, 10V |
| JESD-30 Code |
R-PSSO-F3 |
| Qualification Status |
Not Qualified |
| Rise Time |
20ns |
| Drain to Source Voltage (Vdss) |
350V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
-231mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-350V |
| Height |
1.6mm |
| Length |
4.6mm |
| Width |
2.6mm |
| RoHS Status |
ROHS3 Compliant |