Showing 2953–2964 of 7598 results
Microchip Technology TP2510N8-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Number of Pins |
4 |
| Weight |
52.786812mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
480mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.6W Ta |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Factory Lead Time |
6 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2001 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
260 |
| Turn Off Delay Time |
20 ns |
| JESD-30 Code |
R-PSSO-F3 |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.6W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.5 Ω @ 750mA, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
125pF @ 25V |
| Rise Time |
15ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
480mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-100V |
| Pulsed Drain Current-Max (IDM) |
2.5A |
| Height |
1.6mm |
| Length |
4.6mm |
| Width |
2.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Microchip Technology TP2640LG-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Turn Off Delay Time |
60 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
84.99187mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
86mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
| Number of Elements |
1 |
| Terminal Position |
DUAL |
| Factory Lead Time |
6 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Power Dissipation (Max) |
740mW Ta |
| Terminal Form |
GULL WING |
| Vgs(th) (Max) @ Id |
2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.3W |
| Turn On Delay Time |
10 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15 Ω @ 300mA, 10V |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
400V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
-210mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-400V |
| Height |
1.65mm |
| Length |
4.9mm |
| Width |
3.9mm |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology TP5322N8-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Number of Pins |
4 |
| Weight |
52.786812mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
260mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.6W Ta |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
12Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Form |
FLAT |
| Turn Off Delay Time |
20 ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Input Capacitance (Ciss) (Max) @ Vds |
110pF @ 25V |
| Rise Time |
15ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.6W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12 Ω @ 200mA, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| JESD-30 Code |
R-PSSO-F3 |
| Qualification Status |
Not Qualified |
| Drain to Source Voltage (Vdss) |
220V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
-260mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.26A |
| Drain to Source Breakdown Voltage |
-220V |
| Pulsed Drain Current-Max (IDM) |
0.9A |
| Height |
1.6mm |
| Length |
4.6mm |
| Width |
2.6mm |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology VN0104N3-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Power Dissipation (Max) |
1W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
219.992299mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
350mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| ECCN Code |
EAR99 |
| Factory Lead Time |
2 Weeks |
| Turn Off Delay Time |
6 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Number of Elements |
1 |
| Terminal Finish |
Matte Tin (Sn) |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
65pF @ 25V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1W |
| Turn On Delay Time |
3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3 Ω @ 1A, 10V |
| Additional Feature |
HIGH INPUT IMPEDANCE |
| Terminal Position |
BOTTOM |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
350mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.5A |
| Drain-source On Resistance-Max |
3Ohm |
| Drain to Source Breakdown Voltage |
40V |
| Feedback Cap-Max (Crss) |
8 pF |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology VN0106N3-G-P003
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Turn Off Delay Time |
6 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
350mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Factory Lead Time |
6 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| Power Dissipation (Max) |
1W Tc |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Turn On Delay Time |
3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
65pF @ 25V |
| Rise Time |
5ns |
| Drain to Source Voltage (Vdss) |
60V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1W |
| Continuous Drain Current (ID) |
350mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
3Ohm |
| DS Breakdown Voltage-Min |
60V |
| Feedback Cap-Max (Crss) |
8 pF |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology VN0300L-G-P002
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Power Dissipation (Max) |
1W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
640mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Terminal Position |
BOTTOM |
| Factory Lead Time |
6 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
640mA |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.2 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
190pF @ 20V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Number of Channels |
1 |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
0.64A |
| Drain to Source Breakdown Voltage |
30V |
| Feedback Cap-Max (Crss) |
50 pF |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology VN0606L-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Power Dissipation (Max) |
1W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
330mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Terminal Finish |
Matte Tin (Sn) |
| Factory Lead Time |
6 Weeks |
| Turn Off Delay Time |
10 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2001 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Additional Feature |
HIGH INPUT IMPEDANCE |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
| Vgs (Max) |
±30V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1W |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 1mA |
| Terminal Position |
BOTTOM |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
330mA |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
3Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Feedback Cap-Max (Crss) |
5 pF |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology VN0606L-G-P003
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Number of Elements |
1 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
330mA Tj |
| Number of Terminations |
3 |
| Factory Lead Time |
6 Weeks |
| Power Dissipation (Max) |
1W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| ECCN Code |
EAR99 |
| Vgs(th) (Max) @ Id |
2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3 Ω @ 1A, 10V |
| Terminal Position |
BOTTOM |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
330mA |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
3Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Feedback Cap-Max (Crss) |
5 pF |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology VN10KN3-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Power Dissipation (Max) |
1W Tc |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
219.992299mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
310mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Terminal Finish |
Matte Tin (Sn) |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
6 Weeks |
| Vgs (Max) |
±30V |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
60pF @ 25V |
| Continuous Drain Current (ID) |
310mA |
| Gate to Source Voltage (Vgs) |
30V |
| Terminal Position |
BOTTOM |
| Drain-source On Resistance-Max |
5Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Feedback Cap-Max (Crss) |
5 pF |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| Radiation Hardening |
No |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology VN10KN3-G-P013
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
310mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
6 Weeks |
| Packaging |
Tape & Box (TB) |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| Power Dissipation (Max) |
1W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
310mA |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
60pF @ 25V |
| JESD-30 Code |
O-PBCY-T3 |
| Number of Channels |
1 |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
5Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Feedback Cap-Max (Crss) |
5 pF |
| Height |
5.33mm |
| Length |
5.21mm |
| Width |
4.19mm |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology VN2110K1-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200mA Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Power Dissipation (Max) |
360mW Tc |
| Turn Off Delay Time |
6 ns |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2001 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
HIGH INPUT IMPEDANCE |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
| Rise Time |
5ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
360mW |
| Turn On Delay Time |
3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| Peak Reflow Temperature (Cel) |
260 |
| Terminal Form |
GULL WING |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
200mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.2A |
| Drain-source On Resistance-Max |
4Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Feedback Cap-Max (Crss) |
5 pF |
| Radiation Hardening |
No |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| RoHS Status |
ROHS3 Compliant |
Microchip Technology VN2210N2
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Terminal Form |
WIRE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-205AD, TO-39-3 Metal Can |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.7A Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360mW Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Turn Off Delay Time |
50 ns |
| Published |
2011 |
| JESD-609 Code |
e4 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
NICKEL GOLD |
| Additional Feature |
HIGH INPUT IMPEDANCE |
| Terminal Position |
BOTTOM |
| Mount |
Through Hole |
| Factory Lead Time |
10 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Power Dissipation |
6W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
350m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 10mA |
| Input Capacitance (Ciss) (Max) @ Vds |
500pF @ 25V |
| Rise Time |
10ns |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
1.7A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Feedback Cap-Max (Crss) |
65 pF |
| Height |
6.6mm |
| Length |
9.4mm |
| Width |
9.4mm |
| Radiation Hardening |
No |
| RoHS Status |
Non-RoHS Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |