Showing 385–396 of 7598 results
Diodes Incorporated DMG3414U-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Number of Elements |
1 |
| Part Status |
Active |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
25mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Mount |
Surface Mount |
| Factory Lead Time |
22 Weeks |
| Rise Time |
8.3ns |
| Power Dissipation-Max |
780mW Ta |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
780mW |
| Turn On Delay Time |
8.1 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 8.2A, 4.5V |
| Vgs(th) (Max) @ Id |
900mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
829.9pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
4.2A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
9.6nC @ 4.5V |
| Drive Voltage (Max Rds On,Min Rds On) |
1.8V 4.5V |
| Vgs (Max) |
±8V |
| Number of Channels |
1 |
| Fall Time (Typ) |
9.6 ns |
| Turn-Off Delay Time |
40.1 ns |
| Continuous Drain Current (ID) |
4.2A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
20V |
| Height |
1.1mm |
| Length |
3mm |
| Width |
1.4mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Diodes Incorporated DMG3N60SCT
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| ECCN Code |
EAR99 |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
3.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
104W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
Automotive, AEC-Q101 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Mounting Type |
Through Hole |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Finish |
Matte Tin (Sn) |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.5 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
354pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
12.6nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMG4468LK3-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Digi-Reel® |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.68W Ta |
| Turn Off Delay Time |
18.84 ns |
| Terminal Form |
GULL WING |
| Factory Lead Time |
15 Weeks |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Input Capacitance (Ciss) (Max) @ Vds |
867pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
18.85nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5.46 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 11.6A, 10V |
| Vgs(th) (Max) @ Id |
1.95V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
4 |
| Rise Time |
14.53ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6.01 ns |
| Continuous Drain Current (ID) |
9.7A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
48A |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMG4800LK3-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Published |
2012 |
| Mounting Type |
Surface Mount |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.71W Ta |
| Turn Off Delay Time |
26.33 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Digi-Reel® |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
15 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
798pF @ 10V |
| Pin Count |
4 |
| Number of Channels |
2 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.71W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5.03 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
17m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
1.6V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
8.7nC @ 5V |
| Rise Time |
4.5ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
8.55 ns |
| Continuous Drain Current (ID) |
10A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
48A |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Lead Free |
Diodes Incorporated DMG6402LVT-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins |
26 |
| Current - Continuous Drain (Id) @ 25℃ |
6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1.75W Ta |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
23 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Peak Reflow Temperature (Cel) |
260 |
| Turn Off Delay Time |
13.9 ns |
| Number of Channels |
1 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
2.8 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
30m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
498pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
11.4nC @ 10V |
| Rise Time |
6.2ns |
| Drain to Source Voltage (Vdss) |
30V |
| Element Configuration |
Single |
| Turn On Delay Time |
3.4 ns |
| Continuous Drain Current (ID) |
6A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
6A |
| Height |
900μm |
| Length |
2.9mm |
| Width |
1.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMG6968UQ-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Factory Lead Time |
5 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
6.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.3W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
Single |
| Power Dissipation |
1.3W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 6.5A, 4.5V |
| Vgs(th) (Max) @ Id |
900mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
151pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
8.5nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
6.5A |
| Gate to Source Voltage (Vgs) |
12V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMG7401SFGQ-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Factory Lead Time |
6 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
9.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 20V |
| Power Dissipation (Max) |
940mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 12A, 20V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2987pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
58nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
9.8A |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMG7430LFG-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Weight |
72.007789mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
900mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
22.3 ns |
| Published |
2012 |
| JESD-609 Code |
e4 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1281pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
26.7nC @ 10V |
| Rise Time |
21.2ns |
| Number of Channels |
1 |
| JESD-30 Code |
S-PDSO-N5 |
| Fall Time (Typ) |
5.1 ns |
| Continuous Drain Current (ID) |
10.5A |
| Gate to Source Voltage (Vgs) |
20V |
| DS Breakdown Voltage-Min |
30V |
| Height |
850μm |
| Length |
3.35mm |
| Width |
3.35mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Diodes Incorporated DMG7N65SCT
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| ECCN Code |
EAR99 |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
7.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
125W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
Automotive, AEC-Q101 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Mounting Type |
Through Hole |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Finish |
Matte Tin (Sn) |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
886pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
25.2nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMG8880LK3-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| JESD-609 Code |
e3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.68W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
260 |
| Published |
2010 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rds On (Max) @ Id, Vgs |
7.5m Ω @ 11.6A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
2.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1289pF @ 15V |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
27.6nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
11A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0093Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
48A |
| REACH SVHC |
No SVHC |
| Pin Count |
4 |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMG9N65CTI
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
2.299997g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
13W Tc |
| Turn Off Delay Time |
122 ns |
| Pin Count |
3 |
| Mount |
Through Hole |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Operating Temperature |
-55°C~150°C TJ |
| Number of Channels |
1 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
28 ns |
| Turn On Delay Time |
39 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.3 Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2310pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
39nC @ 10V |
| Rise Time |
29ns |
| Drain to Source Voltage (Vdss) |
650V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
9A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
9A |
| DS Breakdown Voltage-Min |
650V |
| Height |
16.07mm |
| Length |
16.07mm |
| Width |
4.9mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMJ7N70SK3-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
28W Tc |
| Terminal Form |
GULL WING |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Turn Off Delay Time |
24.5 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rds On (Max) @ Id, Vgs |
1.25 Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
351pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
13.9nC @ 10V |
| Rise Time |
11.6ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
3.9A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
700V |
| RoHS Status |
ROHS3 Compliant |