Showing 409–420 of 7598 results
Diodes Incorporated DMN10H700S-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
700mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
400mW Ta |
| Additional Feature |
HIGH RELIABILITY |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2016 |
| Series |
Automotive, AEC-Q101 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Terminal Form |
GULL WING |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-G3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
700m Ω @ 1.5A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
235pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
4.6nC @ 10V |
| Terminal Position |
DUAL |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
700mA |
| Drain Current-Max (Abs) (ID) |
0.7A |
| Drain-source On Resistance-Max |
0.7Ohm |
| DS Breakdown Voltage-Min |
100V |
| FET Feature |
Standard |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN1150UFB-7B
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Package / Case |
3-UFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.41A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Turn Off Delay Time |
57 ns |
| Published |
2013 |
| JESD-609 Code |
e4 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
BOTTOM |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
15 Weeks |
| Vgs (Max) |
±6V |
| Fall Time (Typ) |
30 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4.1 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
150m Ω @ 1A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
106pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
1.5nC @ 4.5V |
| Rise Time |
34.5ns |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
1.41A |
| Gate to Source Voltage (Vgs) |
6V |
| Drain to Source Breakdown Voltage |
12V |
| Height |
480μm |
| Length |
1.08mm |
| Width |
675μm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Diodes Incorporated DMN2005K-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Power Dissipation (Max) |
350mW Ta |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
300mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 2.7V |
| Terminal Finish |
Matte Tin (Sn) |
| Factory Lead Time |
16 Weeks |
| Operating Temperature |
-65°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Terminal Position |
DUAL |
| Rds On (Max) @ Id, Vgs |
1.7 Ω @ 200mA, 2.7V |
| Vgs(th) (Max) @ Id |
900mV @ 100μA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
350mW |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs (Max) |
±10V |
| Continuous Drain Current (ID) |
300mA |
| Gate to Source Voltage (Vgs) |
10V |
| Drain to Source Breakdown Voltage |
20V |
| Height |
1mm |
| Length |
2.9mm |
| Width |
1.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN2005LPK-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Terminal Form |
NO LEAD |
| Mounting Type |
Surface Mount |
| Package / Case |
3-UFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
440mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4V |
| Number of Elements |
1 |
| Operating Temperature |
-65°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
450mW Ta |
| Published |
2012 |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Vgs(th) (Max) @ Id |
1.2V @ 100μA |
| Vgs (Max) |
±10V |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 10mA, 4V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Peak Reflow Temperature (Cel) |
260 |
| Continuous Drain Current (ID) |
440mA |
| Gate to Source Voltage (Vgs) |
10V |
| Drain Current-Max (Abs) (ID) |
0.4A |
| Drain to Source Breakdown Voltage |
20V |
| Height |
470μm |
| Length |
1mm |
| Width |
600μm |
| REACH SVHC |
No SVHC |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN2005UFG-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Power Dissipation (Max) |
1.05W Ta |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Weight |
72.007789mg |
| Current - Continuous Drain (Id) @ 25℃ |
18.1A Tc |
| ECCN Code |
EAR99 |
| Factory Lead Time |
23 Weeks |
| Turn Off Delay Time |
114 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Terminal Finish |
Matte Tin (Sn) |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6495pF @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Turn On Delay Time |
12.4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.6m Ω @ 13.5A, 4.5V |
| Capacitance |
6.495nF |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
164nC @ 10V |
| Rise Time |
25.7ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
38 ns |
| Continuous Drain Current (ID) |
18.1A |
| Gate to Source Voltage (Vgs) |
4.5V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN2011UFDE-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
6-UDFN Exposed Pad |
| Current - Continuous Drain (Id) @ 25℃ |
11.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Power Dissipation (Max) |
610mW Ta |
| Turn Off Delay Time |
21.6 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e4 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
23 Weeks |
| Number of Channels |
1 |
| Base Part Number |
DMN2011 |
| Element Configuration |
Single |
| Turn On Delay Time |
3.6 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
9.5m Ω @ 7A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2248pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Rise Time |
2.6ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
13.5 ns |
| Continuous Drain Current (ID) |
11.7A |
| Gate to Source Voltage (Vgs) |
12V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN2015UFDF-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Part Status |
Active |
| Mounting Type |
Surface Mount |
| Package / Case |
6-UDFN Exposed Pad |
| Current - Continuous Drain (Id) @ 25℃ |
15.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Power Dissipation (Max) |
1.8W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e4 |
| Factory Lead Time |
18 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| ECCN Code |
EAR99 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 8.5A, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1439pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
42.3nC @ 10V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN2022UFDF-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Terminal Form |
NO LEAD |
| Mounting Type |
Surface Mount |
| Package / Case |
6-UDFN Exposed Pad |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.9A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
660mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
632 ns |
| Published |
2014 |
| JESD-609 Code |
e4 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
907pF @ 10V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
56 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
22m Ω @ 4A, 4.5V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Peak Reflow Temperature (Cel) |
260 |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 8V |
| Rise Time |
87ns |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
239 ns |
| Continuous Drain Current (ID) |
7.9A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain-source On Resistance-Max |
0.05Ohm |
| Drain to Source Breakdown Voltage |
20V |
| JESD-30 Code |
S-PDSO-N6 |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN2027UPS-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
10A Ta 36A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Power Dissipation (Max) |
1.1W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| JESD-609 Code |
e3 |
| Factory Lead Time |
14 Weeks |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Terminal Finish |
Matte Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
12.5m Ω @ 9.4A, 4.5V |
| Vgs(th) (Max) @ Id |
1.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1091pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
11.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
36A |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN2041L-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Digi-Reel® |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
780mW Ta |
| Turn Off Delay Time |
22.1 ns |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2009 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
41mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
15.6nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
780mW |
| Turn On Delay Time |
4.69 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 6A, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
550pF @ 10V |
| Rise Time |
13.19ns |
| Vgs (Max) |
±12V |
| Peak Reflow Temperature (Cel) |
260 |
| Fall Time (Typ) |
6.43 ns |
| Continuous Drain Current (ID) |
6.4A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
20V |
| Height |
1.1mm |
| Length |
3mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Diodes Incorporated DMN2050L-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.9A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.4W Ta |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
29MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
532pF @ 10V |
| Peak Reflow Temperature (Cel) |
260 |
| Pin Count |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.4W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
29m Ω @ 5A, 4.5V |
| Vgs(th) (Max) @ Id |
1.4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
6.7nC @ 4.5V |
| Vgs (Max) |
±12V |
| Terminal Form |
GULL WING |
| Continuous Drain Current (ID) |
5.9A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
20V |
| Height |
1mm |
| Length |
2.9mm |
| Width |
1.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Lead Free |
Lead Free |
Diodes Incorporated DMN2075U-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
800mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
28.1 ns |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
45mOhm |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Contact Plating |
Tin |
| Factory Lead Time |
40 Weeks |
| Rise Time |
9.8ns |
| Drain to Source Voltage (Vdss) |
20V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
800mW |
| Turn On Delay Time |
7.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
38m Ω @ 3.6A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
594.3pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
7nC @ 4.5V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
6.7 ns |
| Continuous Drain Current (ID) |
4.2A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
8V |
| DS Breakdown Voltage-Min |
20V |
| Height |
1.1mm |
| Length |
3mm |
| Width |
1.4mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |