Showing 421–432 of 7598 results
Diodes Incorporated DMN2112SN-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500mW Ta |
| Turn Off Delay Time |
75 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
19 Weeks |
| Fall Time (Typ) |
65 ns |
| Continuous Drain Current (ID) |
1.2A |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500mW |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
220pF @ 10V |
| Rise Time |
15ns |
| Vgs (Max) |
±8V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Threshold Voltage |
1.2V |
| Gate to Source Voltage (Vgs) |
8V |
| Drain-source On Resistance-Max |
0.25Ohm |
| Drain to Source Breakdown Voltage |
20V |
| Dual Supply Voltage |
20V |
| Nominal Vgs |
1.2 V |
| Height |
1.3mm |
| Length |
3.1mm |
| Width |
1.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Number of Channels |
1 |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN21D2UFB-7B
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mounting Type |
Surface Mount |
| Package / Case |
3-UFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
760mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
380mW Ta |
| Turn Off Delay Time |
19.6 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
BOTTOM |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mount |
Surface Mount |
| Factory Lead Time |
15 Weeks |
| Fall Time (Typ) |
9.8 ns |
| Continuous Drain Current (ID) |
760mA |
| Turn On Delay Time |
3.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
990m Ω @ 100mA, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
27.6pF @ 16V |
| Gate Charge (Qg) (Max) @ Vgs |
0.93nC @ 10V |
| Rise Time |
4.2ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Channels |
1 |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
0.76A |
| Drain-source On Resistance-Max |
0.99Ohm |
| DS Breakdown Voltage-Min |
20V |
| Height |
480μm |
| Length |
1.08mm |
| Width |
675μm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Diodes Incorporated DMN2250UFB-7B
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
3-UFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.35A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500mW Ta |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
6 Weeks |
| Packaging |
Cut Tape (CT) |
| Published |
2013 |
| JESD-609 Code |
e4 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
BOTTOM |
| Peak Reflow Temperature (Cel) |
260 |
| Turn Off Delay Time |
59.4 ns |
| Number of Channels |
1 |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4.3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
170m Ω @ 1A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
94pF @ 16V |
| Gate Charge (Qg) (Max) @ Vgs |
3.1nC @ 10V |
| Rise Time |
6.1ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
25.4 ns |
| Continuous Drain Current (ID) |
1.35A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain-source On Resistance-Max |
0.25Ohm |
| DS Breakdown Voltage-Min |
20V |
| Height |
480μm |
| Length |
1.08mm |
| Width |
675μm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN2300UFB-7B
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Turn Off Delay Time |
21.71 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
3-UFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.32A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Terminal Position |
BOTTOM |
| Factory Lead Time |
17 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
468mW Ta |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs(th) (Max) @ Id |
950mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
67.62pF @ 20V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4.92 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
175m Ω @ 300mA, 4.5V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
0.89nC @ 4.5V |
| Rise Time |
6.93ns |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
10.62 ns |
| Continuous Drain Current (ID) |
1.78A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
20V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN2300UFB4-7B
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500mW Ta |
| Turn Off Delay Time |
38 ns |
| Pin Count |
3 |
| Factory Lead Time |
16 Weeks |
| Published |
2012 |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
175mOhm |
| Terminal Position |
BOTTOM |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Operating Temperature |
-55°C~150°C TJ |
| Number of Channels |
1 |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
13 ns |
| Power Dissipation |
500mW |
| Case Connection |
DRAIN |
| Turn On Delay Time |
3.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
175m Ω @ 300mA, 4.5V |
| Vgs(th) (Max) @ Id |
950mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
64.3pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
1.6nC @ 4.5V |
| Rise Time |
2.8ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
1.3A |
| Threshold Voltage |
950mV |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
20V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
400μm |
| Length |
1.05mm |
| Width |
650μm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated DMN2300UFD-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
3-UDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.21A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
470mW Ta |
| Terminal Position |
DUAL |
| Factory Lead Time |
17 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW THRESHOLD |
| Turn Off Delay Time |
21.71 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Gate Charge (Qg) (Max) @ Vgs |
2nC @ 4.5V |
| Rise Time |
6.93ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
4.92 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 900mA, 4.5V |
| Vgs(th) (Max) @ Id |
950mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
67.62pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
10.62 ns |
| Continuous Drain Current (ID) |
1.73A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain-source On Resistance-Max |
0.2Ohm |
| DS Breakdown Voltage-Min |
20V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN2400UFD-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Surface Mount |
| Package / Case |
3-UDFN |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
900mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Turn Off Delay Time |
13.74 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
400mW Ta |
| Packaging |
Cut Tape (CT) |
| Published |
2012 |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Factory Lead Time |
40 Weeks |
| Rise Time |
7.28ns |
| Vgs (Max) |
±12V |
| Turn On Delay Time |
4.06 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
37pF @ 16V |
| Gate Charge (Qg) (Max) @ Vgs |
500nC @ 4.5V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Peak Reflow Temperature (Cel) |
260 |
| Fall Time (Typ) |
10.54 ns |
| Continuous Drain Current (ID) |
900mA |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
20V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Diodes Incorporated DMN2550UFA-7B
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Turn Off Delay Time |
105 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
600mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Number of Elements |
1 |
| Terminal Form |
NO LEAD |
| Factory Lead Time |
15 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e4 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Capacitance |
52.5pF |
| Power Dissipation (Max) |
360mW Ta |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
52.5pF @ 16V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7.1 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
450m Ω @ 200mA, 4.5V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-N2 |
| Gate Charge (Qg) (Max) @ Vgs |
0.88nC @ 4.5V |
| Rise Time |
11ns |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
36 ns |
| Continuous Drain Current (ID) |
600mA |
| Gate to Source Voltage (Vgs) |
8V |
| Drain Current-Max (Abs) (ID) |
0.6A |
| Drain-source On Resistance-Max |
0.45Ohm |
| Drain to Source Breakdown Voltage |
20V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN25D0UFA-7B
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
240mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.7V 4.5V |
| Number of Elements |
1 |
| Terminal Position |
SINGLE |
| Factory Lead Time |
15 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e4 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
HIGH RELIABILITY |
| Power Dissipation (Max) |
280mW Ta |
| Terminal Form |
NO LEAD |
| Rds On (Max) @ Id, Vgs |
4 Ω @ 400mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Base Part Number |
DMN25D0 |
| Reference Standard |
AEC-Q101 |
| JESD-30 Code |
R-PSSO-N2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Input Capacitance (Ciss) (Max) @ Vds |
27.9pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
0.36nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
8V |
| Continuous Drain Current (ID) |
240mA |
| Drain Current-Max (Abs) (ID) |
0.24A |
| Drain-source On Resistance-Max |
4Ohm |
| DS Breakdown Voltage-Min |
25V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN26D0UFB4-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Pin Count |
3 |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
230mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
350mW Ta |
| Turn Off Delay Time |
13.4 ns |
| Packaging |
Digi-Reel® |
| Published |
2017 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
10Ohm |
| Terminal Position |
BOTTOM |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
15.2 ns |
| Power Dissipation |
350mW |
| Case Connection |
DRAIN |
| Turn On Delay Time |
3.8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3 Ω @ 100mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
14.1pF @ 15V |
| Rise Time |
7.9ns |
| Drain to Source Voltage (Vdss) |
20V |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
240mA |
| Gate to Source Voltage (Vgs) |
10V |
| Drain Current-Max (Abs) (ID) |
0.24A |
| DS Breakdown Voltage-Min |
20V |
| Height |
350μm |
| Length |
1.05mm |
| Width |
650μm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Diodes Incorporated DMN26D0UT-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Cut Tape (CT) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-523 |
| Number of Pins |
3 |
| Weight |
2.012816mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
230mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.2V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300mW Ta |
| Turn Off Delay Time |
13.4 ns |
| Terminal Form |
GULL WING |
| Factory Lead Time |
14 Weeks |
| Published |
2009 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
3Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
15.2 ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300mW |
| Turn On Delay Time |
3.8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3 Ω @ 100mA, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
14.1pF @ 15V |
| Rise Time |
7.9ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Continuous Drain Current (ID) |
230mA |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
10V |
| Drain to Source Breakdown Voltage |
20V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
900μm |
| Length |
1.7mm |
| Width |
850μm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated DMN3008SFGQ-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17.6A Ta 62A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Additional Feature |
HIGH RELIABILITY |
| Power Dissipation (Max) |
900mW Ta |
| Packaging |
Tape & Reel (TR) |
| Series |
Automotive, AEC-Q101 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Mount |
Surface Mount |
| Factory Lead Time |
23 Weeks |
| Rds On (Max) @ Id, Vgs |
4.4m Ω @ 13.5A, 10V |
| Terminal Form |
NO LEAD |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
S-PDSO-N5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
2.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3690pF @ 10V |
| Terminal Position |
DUAL |
| Gate Charge (Qg) (Max) @ Vgs |
86nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
62A |
| Drain Current-Max (Abs) (ID) |
17.6A |
| Drain-source On Resistance-Max |
0.0055Ohm |
| DS Breakdown Voltage-Min |
30V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |