Showing 445–456 of 7598 results
Diodes Incorporated DMN3053L-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Current - Continuous Drain (Id) @ 25℃ |
4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
| Power Dissipation (Max) |
760mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
1.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
676pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
17.2nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
4A |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN3065LW-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Turn Off Delay Time |
10.3 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-70, SOT-323 |
| Weight |
6.010099mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
| Number of Elements |
1 |
| Terminal Position |
DUAL |
| Factory Lead Time |
22 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Power Dissipation (Max) |
770mW Ta |
| Terminal Form |
GULL WING |
| Input Capacitance (Ciss) (Max) @ Vds |
465pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
11.7nC @ 10V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
1.9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
52m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Base Part Number |
DMN3065 |
| JESD-30 Code |
R-PDSO-G3 |
| Rise Time |
1.6ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
2 ns |
| Continuous Drain Current (ID) |
4A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
4A |
| Drain-source On Resistance-Max |
0.052Ohm |
| DS Breakdown Voltage-Min |
30V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN3070SSN-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
59 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
780mW Ta |
| Terminal Form |
GULL WING |
| Turn Off Delay Time |
4.4 ns |
| Packaging |
Cut Tape (CT) |
| Published |
2010 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Drain to Source Voltage (Vdss) |
30V |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
4.3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 4.2A, 10V |
| Vgs(th) (Max) @ Id |
2.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
697pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
13.2nC @ 10V |
| Rise Time |
20.1ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.1 ns |
| JESD-30 Code |
R-PDSO-G3 |
| Continuous Drain Current (ID) |
4.2A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.04Ohm |
| DS Breakdown Voltage-Min |
30V |
| Height |
1.3mm |
| Length |
3.1mm |
| Width |
1.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN30H14DLY-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Turn Off Delay Time |
22 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Number of Pins |
4 |
| Weight |
130.492855mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
210mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Additional Feature |
HIGH RELIABILITY |
| Factory Lead Time |
16 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Power Dissipation (Max) |
900mW Ta |
| Terminal Form |
FLAT |
| Rds On (Max) @ Id, Vgs |
14 Ω @ 300mA, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Base Part Number |
DMN30H14 |
| JESD-30 Code |
R-PSSO-F3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
3.3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Input Capacitance (Ciss) (Max) @ Vds |
96pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
4nC @ 10V |
| Rise Time |
8.6ns |
| Drain to Source Voltage (Vdss) |
300V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
210mA |
| Gate to Source Voltage (Vgs) |
20V |
| DS Breakdown Voltage-Min |
300V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN30H4D0L-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Power Dissipation (Max) |
310mW Ta |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| JESD-609 Code |
e3 |
| Published |
2014 |
| Packaging |
Tape & Reel (TR) |
| Operating Temperature |
-55°C~150°C TJ |
| ECCN Code |
EAR99 |
| Turn Off Delay Time |
25.8 ns |
| Drive Voltage (Max Rds On, Min Rds On) |
2.7V 10V |
| Current - Continuous Drain (Id) @ 25℃ |
250mA Ta |
| Weight |
7.994566mg |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Factory Lead Time |
5 Weeks |
| Base Part Number |
DMN30H4 |
| Gate Charge (Qg) (Max) @ Vgs |
7.6nC @ 10V |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
250mA |
| Fall Time (Typ) |
17.5 ns |
| Vgs (Max) |
±20V |
| Drain to Source Voltage (Vdss) |
300V |
| Rise Time |
4.7ns |
| Input Capacitance (Ciss) (Max) @ Vds |
187.3pF @ 25V |
| Terminal Finish |
Matte Tin (Sn) |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Rds On (Max) @ Id, Vgs |
4 Ω @ 300mA, 10V |
| FET Type |
N-Channel |
| Turn On Delay Time |
4.9 ns |
| Element Configuration |
Single |
| Number of Channels |
1 |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN30H4D0L-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package |
SOT-23 |
| Current - Continuous Drain (Id) @ 25℃ |
250mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.7V 10V |
| Power Dissipation (Max) |
310mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Part Status |
Active |
| Factory Lead Time |
23 Weeks |
| Min Operating Temperature |
-55°C |
| Max Operating Temperature |
150°C |
| Base Part Number |
DMN30H4 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4Ohm @ 300mA, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
187.3pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
7.6nC @ 10V |
| Drain to Source Voltage (Vdss) |
300V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
250mA |
| Input Capacitance |
187.3pF |
| Rds On Max |
4 Ω |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN3110LCP3-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Factory Lead Time |
28 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XFDFN |
| Current - Continuous Drain (Id) @ 25℃ |
3.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 8V |
| Power Dissipation (Max) |
1.38W |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
69m Ω @ 500mA, 8V |
| Vgs(th) (Max) @ Id |
1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
150pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
1.52nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
12V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN3112SSS-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
850.995985mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
6A |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
57m Ω @ 5.8A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
268pF @ 15V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
8 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain-source On Resistance-Max |
0.057Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
24A |
| Height |
1.5mm |
| Length |
4.95mm |
| Width |
3.9mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN31D5UFZ-7B
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Turn Off Delay Time |
20 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
220mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.2V 4.5V |
| Number of Elements |
1 |
| Terminal Position |
BOTTOM |
| Factory Lead Time |
15 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e4 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
393mW Ta |
| Terminal Form |
NO LEAD |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
22.2pF @ 15V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
3.1 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 100mA, 4.5V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
0.35nC @ 4.5V |
| Rise Time |
2ns |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
6.9 ns |
| Continuous Drain Current (ID) |
220mA |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
0.22A |
| Drain to Source Breakdown Voltage |
30V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN31D6UT-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Factory Lead Time |
15 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-523 |
| Current - Continuous Drain (Id) @ 25℃ |
350mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Power Dissipation (Max) |
320mW |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 100mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
13.6pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
0.35nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±12V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN33D8LT-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Factory Lead Time |
22 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-523 |
| Current - Continuous Drain (Id) @ 25℃ |
115mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4V |
| Power Dissipation (Max) |
240mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5 Ω @ 10mA, 4V |
| Vgs(th) (Max) @ Id |
1.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
48pF @ 5V |
| Gate Charge (Qg) (Max) @ Vgs |
0.55nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
115mA |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN33D8LT-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Factory Lead Time |
22 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-523 |
| Current - Continuous Drain (Id) @ 25℃ |
115mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4V |
| Power Dissipation (Max) |
240mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5 Ω @ 10mA, 4V |
| Vgs(th) (Max) @ Id |
1.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
48pF @ 5V |
| Gate Charge (Qg) (Max) @ Vgs |
0.55nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
115mA |
| RoHS Status |
ROHS3 Compliant |