Showing 457–468 of 7598 results
Diodes Incorporated DMN3404L-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Power Dissipation-Max |
720mW Ta |
| Part Status |
Active |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
28mOhm |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Contact Plating |
Tin |
| Factory Lead Time |
15 Weeks |
| Fall Time (Typ) |
6.18 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
3.41 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 5.8A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
386pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
5.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
9.2nC @ 10V |
| Rise Time |
6.18ns |
| Drive Voltage (Max Rds On,Min Rds On) |
3V 10V |
| Vgs (Max) |
±20V |
| Turn-Off Delay Time |
13.92 ns |
| Continuous Drain Current (ID) |
4.2A |
| Element Configuration |
Single |
| Threshold Voltage |
1.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
5.8A |
| Drain to Source Breakdown Voltage |
30V |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
1.5 V |
| Height |
1.1mm |
| Length |
2.9mm |
| Width |
1.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
1.4W |
| Lead Free |
Lead Free |
Diodes Incorporated DMN3730UFB-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mounting Type |
Surface Mount |
| Package / Case |
3-UFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
750mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
470mW Ta |
| Turn Off Delay Time |
38 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
BOTTOM |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
1.6nC @ 4.5V |
| Rise Time |
2.8ns |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
690mW |
| Case Connection |
DRAIN |
| Turn On Delay Time |
3.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
460m Ω @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id |
950mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
64.3pF @ 25V |
| Qualification Status |
Not Qualified |
| Pin Count |
3 |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
910mA |
| Threshold Voltage |
450mV |
| Gate to Source Voltage (Vgs) |
8V |
| Drain Current-Max (Abs) (ID) |
0.75A |
| Drain-source On Resistance-Max |
0.46Ohm |
| Drain to Source Breakdown Voltage |
30V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Lead Free |
Diodes Incorporated DMN3900UFA-7B
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
550mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Turn Off Delay Time |
80.6 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
390mW Ta |
| Packaging |
Digi-Reel® |
| Published |
2013 |
| JESD-609 Code |
e4 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| Mount |
Surface Mount |
| Factory Lead Time |
15 Weeks |
| Rise Time |
7.8ns |
| Vgs (Max) |
±8V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
760m Ω @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id |
950mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
42.2pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
0.7nC @ 4.5V |
| Number of Channels |
1 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Fall Time (Typ) |
23.4 ns |
| Continuous Drain Current (ID) |
650mA |
| Gate to Source Voltage (Vgs) |
8V |
| Drain Current-Max (Abs) (ID) |
0.65A |
| Drain to Source Breakdown Voltage |
30V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Diodes Incorporated DMN4008LFG-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Turn Off Delay Time |
69.7 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Weight |
72.007789mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14.4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
3.3V 10V |
| Number of Elements |
1 |
| Additional Feature |
HIGH RELIABILITY |
| Factory Lead Time |
23 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Power Dissipation (Max) |
1W Ta |
| Terminal Position |
DUAL |
| Rds On (Max) @ Id, Vgs |
7.5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
S-PDSO-N5 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
| Input Capacitance (Ciss) (Max) @ Vds |
3537pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
74nC @ 10V |
| Rise Time |
14.1ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
24.4 ns |
| Continuous Drain Current (ID) |
14.4A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0075Ohm |
| Drain to Source Breakdown Voltage |
40V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN4025LSD-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Factory Lead Time |
22 Weeks |
| Package / Case |
SOIC |
| Weight |
73.992255mg |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Terminal Finish |
Matte Tin (Sn) |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Drain to Source Voltage (Vdss) |
40V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN4027SSS-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
73.992255mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.56W Ta |
| Additional Feature |
HIGH RELIABILITY |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Turn Off Delay Time |
15.4 ns |
| Terminal Form |
GULL WING |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
604pF @ 20V |
| Pin Count |
8 |
| Number of Channels |
2 |
| Element Configuration |
Dual |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.8W |
| Turn On Delay Time |
3.1 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
27m Ω @ 7A, 10V |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Gate Charge (Qg) (Max) @ Vgs |
12.9nC @ 10V |
| Rise Time |
3.1ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7.5 ns |
| Continuous Drain Current (ID) |
6A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain to Source Breakdown Voltage |
40V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN4036LK3-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Cut Tape (CT) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.12W Ta |
| Turn Off Delay Time |
11.6 ns |
| Pin Count |
4 |
| Factory Lead Time |
17 Weeks |
| Published |
2010 |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9.5 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
3.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
36m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
453pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
9.2nC @ 10V |
| Rise Time |
11.7ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
12.2A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
8.5A |
| Drain to Source Breakdown Voltage |
40V |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated DMN4040SK3-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Published |
2010 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.71W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Factory Lead Time |
15 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
SINGLE |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
260 |
| Rds On (Max) @ Id, Vgs |
30m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Input Capacitance (Ciss) (Max) @ Vds |
945pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
18.6nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
6A |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain-source On Resistance-Max |
0.03Ohm |
| Pulsed Drain Current-Max (IDM) |
50A |
| DS Breakdown Voltage-Min |
40V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN53D0L-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Terminal Finish |
Matte Tin (Sn) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Weight |
7.994566mg |
| Current - Continuous Drain (Id) @ 25℃ |
500mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
| Turn Off Delay Time |
19 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
370mW Ta |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Factory Lead Time |
22 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
46pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
0.6nC @ 4.5V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Turn On Delay Time |
2.7 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.6 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Peak Reflow Temperature (Cel) |
260 |
| Capacitance |
46pF |
| Rise Time |
2.5ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
500mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
50V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN53D0U-13
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
300mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
520mW Ta |
| Terminal Position |
DUAL |
| Turn Off Delay Time |
21 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
HIGH RELIABILITY |
| Mount |
Surface Mount |
| Factory Lead Time |
22 Weeks |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Peak Reflow Temperature (Cel) |
260 |
| JESD-30 Code |
R-PDSO-G3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
2.1 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2 Ω @ 50mA, 5V |
| Input Capacitance (Ciss) (Max) @ Vds |
37.1pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
0.6nC @ 4.5V |
| Terminal Form |
GULL WING |
| Rise Time |
2.8ns |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
14 ns |
| Continuous Drain Current (ID) |
300mA |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
0.3A |
| Drain-source On Resistance-Max |
3Ohm |
| Drain to Source Breakdown Voltage |
50V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMN55D0UT-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-523 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4V |
| Number of Elements |
1 |
| Terminal Position |
DUAL |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Power Dissipation (Max) |
200mW Ta |
| Terminal Form |
GULL WING |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
160mA |
| Pin Count |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200mW |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4 Ω @ 100mA, 4V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
25pF @ 10V |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Threshold Voltage |
800mV |
| Gate to Source Voltage (Vgs) |
12V |
| Drain-source On Resistance-Max |
4Ohm |
| Drain to Source Breakdown Voltage |
50V |
| Height |
750μm |
| Length |
1.6mm |
| Width |
800μm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated DMN55D0UTQ-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Terminal Finish |
Matte Tin (Sn) |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-523 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
200mW Ta |
| Published |
2015 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Rds On (Max) @ Id, Vgs |
4 Ω @ 100mA, 4V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Reference Standard |
AEC-Q101 |
| JESD-30 Code |
R-PDSO-G3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Terminal Position |
DUAL |
| Additional Feature |
HIGH RELIABILITY |
| Input Capacitance (Ciss) (Max) @ Vds |
25pF @ 10V |
| Drain to Source Voltage (Vdss) |
50V |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
160mA |
| Drain Current-Max (Abs) (ID) |
0.16A |
| Drain-source On Resistance-Max |
4Ohm |
| DS Breakdown Voltage-Min |
50V |
| Terminal Form |
GULL WING |
| RoHS Status |
ROHS3 Compliant |