Transistors - FETs/MOSFETs - Single

Diodes Incorporated DMN7022LFGQ-13

In stock

SKU: DMN7022LFGQ-13-11
Manufacturer

Diodes Incorporated

Factory Lead Time

23 Weeks

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Current - Continuous Drain (Id) @ 25℃

23A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

2W Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Part Status

Active

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

22m Ω @ 7.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2737pF @ 35V

Gate Charge (Qg) (Max) @ Vgs

56.5nC @ 10V

Drain to Source Voltage (Vdss)

75V

Vgs (Max)

±20V

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMN7022LFGQ-7

In stock

SKU: DMN7022LFGQ-7-11
Manufacturer

Diodes Incorporated

Factory Lead Time

16 Weeks

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Current - Continuous Drain (Id) @ 25℃

23A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

2W Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Part Status

Active

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

22m Ω @ 7.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2737pF @ 35V

Gate Charge (Qg) (Max) @ Vgs

56.5nC @ 10V

Drain to Source Voltage (Vdss)

75V

Vgs (Max)

±20V

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMN90H8D5HCT

In stock

SKU: DMN90H8D5HCT-11
Manufacturer

Diodes Incorporated

Factory Lead Time

17 Weeks

Mounting Type

Through Hole

Package / Case

TO-220-3

Current - Continuous Drain (Id) @ 25℃

2.5A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

125W Tc

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

Not Applicable

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

7 Ω @ 1A, 10V

Vgs(th) (Max) @ Id

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

470pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

7.9nC @ 10V

Drain to Source Voltage (Vdss)

900V

Vgs (Max)

±30V

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMNH10H028SCT

In stock

SKU: DMNH10H028SCT-11
Manufacturer

Diodes Incorporated

Part Status

Active

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Current - Continuous Drain (Id) @ 25℃

60A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

2.8W Ta

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2016

Series

Automotive, AEC-Q101

JESD-609 Code

e3

Pbfree Code

yes

Factory Lead Time

18 Weeks

ECCN Code

EAR99

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Terminal Finish

Matte Tin (Sn)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

28m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1942pF @ 50V

Gate Charge (Qg) (Max) @ Vgs

31.9nC @ 10V

Drain to Source Voltage (Vdss)

100V

Vgs (Max)

±20V

Continuous Drain Current (ID)

60A

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMNH10H028SK3-13

In stock

SKU: DMNH10H028SK3-13-11
Manufacturer

Diodes Incorporated

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mount

Surface Mount

Mounting Type

Surface Mount

Current - Continuous Drain (Id) @ 25℃

55A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

2W Ta

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Published

2015

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Factory Lead Time

17 Weeks

Terminal Finish

Matte Tin (Sn)

ECCN Code

EAR99

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

28m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

3.3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2245pF @ 50V

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Drain to Source Voltage (Vdss)

100V

Vgs (Max)

±20V

Continuous Drain Current (ID)

55A

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMNH4011SPS-13

In stock

SKU: DMNH4011SPS-13-11
Manufacturer

Diodes Incorporated

Packaging

Tape & Reel (TR)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

13A Ta 80A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

1.5W Ta 100W Tc

Terminal Position

DUAL

Operating Temperature

-55°C~175°C TJ

Published

2016

Series

Automotive, AEC-Q101

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

HIGH RELIABILITY

Mount

Surface Mount

Factory Lead Time

15 Weeks

Vgs(th) (Max) @ Id

4V @ 250μA

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-30 Code

R-PDSO-F5

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

10m Ω @ 20A, 10V

Input Capacitance (Ciss) (Max) @ Vds

1405pF @ 20V

Gate Charge (Qg) (Max) @ Vgs

25.5nC @ 10V

Terminal Form

FLAT

Drain to Source Voltage (Vdss)

40V

Vgs (Max)

±20V

Continuous Drain Current (ID)

80A

Drain Current-Max (Abs) (ID)

13A

Drain-source On Resistance-Max

0.01Ohm

Pulsed Drain Current-Max (IDM)

90A

DS Breakdown Voltage-Min

40V

Avalanche Energy Rating (Eas)

170 mJ

Reach Compliance Code

not_compliant

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMNH4011SPSQ-13

In stock

SKU: DMNH4011SPSQ-13-11
Manufacturer

Diodes Incorporated

Packaging

Tape & Reel (TR)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

12.9A Ta 100A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

2.5W Ta 150W Tc

Terminal Position

DUAL

Operating Temperature

-55°C~175°C TJ

Published

2016

Series

Automotive, AEC-Q101

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

HIGH RELIABILITY

Mount

Surface Mount

Factory Lead Time

22 Weeks

Vgs(th) (Max) @ Id

4V @ 250μA

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-30 Code

R-PDSO-F5

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

10m Ω @ 50A, 10V

Input Capacitance (Ciss) (Max) @ Vds

1405pF @ 20V

Gate Charge (Qg) (Max) @ Vgs

25.5nC @ 10V

Terminal Form

FLAT

Drain to Source Voltage (Vdss)

40V

Vgs (Max)

±20V

Continuous Drain Current (ID)

100A

Drain Current-Max (Abs) (ID)

12.9A

Drain-source On Resistance-Max

0.01Ohm

Pulsed Drain Current-Max (IDM)

90A

DS Breakdown Voltage-Min

40V

Avalanche Energy Rating (Eas)

176 mJ

Reach Compliance Code

not_compliant

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMNH6008SCTQ

In stock

SKU: DMNH6008SCTQ-11
Manufacturer

Diodes Incorporated

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

130A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

210W Tc

Additional Feature

HIGH RELIABILITY

Factory Lead Time

18 Weeks

Published

2016

Series

Automotive, AEC-Q101

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Operating Temperature

-55°C~175°C TJ

Terminal Position

SINGLE

Input Capacitance (Ciss) (Max) @ Vds

2596pF @ 30V

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-30 Code

R-PSFM-T3

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

8m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

20V

Continuous Drain Current (ID)

130A

JEDEC-95 Code

TO-220AB

Drain-source On Resistance-Max

0.008Ohm

Pulsed Drain Current-Max (IDM)

200A

DS Breakdown Voltage-Min

60V

Avalanche Energy Rating (Eas)

190 mJ

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMNH6042SK3-13

In stock

SKU: DMNH6042SK3-13-11
Manufacturer

Diodes Incorporated

Published

2016

Mount

Surface Mount

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

25A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2W Ta

Operating Temperature

-55°C~175°C TJ

Terminal Position

SINGLE

Factory Lead Time

17 Weeks

Series

Automotive, AEC-Q101

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

HIGH RELIABILITY

Packaging

Tape & Reel (TR)

Terminal Form

GULL WING

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

492pF @ 25V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

50m Ω @ 6A, 10V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Gate Charge (Qg) (Max) @ Vgs

8.8nC @ 10V

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Continuous Drain Current (ID)

25A

Drain-source On Resistance-Max

0.065Ohm

Pulsed Drain Current-Max (IDM)

40A

DS Breakdown Voltage-Min

60V

Avalanche Energy Rating (Eas)

65 mJ

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMP1009UFDF-7

In stock

SKU: DMP1009UFDF-7-11
Manufacturer

Diodes Incorporated

Power Dissipation (Max)

2W Ta

Mounting Type

Surface Mount

Package / Case

6-UDFN Exposed Pad

Surface Mount

YES

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

15A Ta

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Terminal Position

DUAL

Factory Lead Time

17 Weeks

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

e4

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Number of Elements

1

Terminal Form

NO LEAD

Rds On (Max) @ Id, Vgs

11m Ω @ 5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250μA

JESD-30 Code

S-PDSO-N6

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

P-Channel

Transistor Application

SWITCHING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Input Capacitance (Ciss) (Max) @ Vds

1860pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

44nC @ 8V

Drain to Source Voltage (Vdss)

12V

Vgs (Max)

±8V

Drain Current-Max (Abs) (ID)

11A

Drain-source On Resistance-Max

0.014Ohm

DS Breakdown Voltage-Min

12V

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMP1022UFDE-7

In stock

SKU: DMP1022UFDE-7-11
Manufacturer

Diodes Incorporated

Published

2012

Mounting Type

Surface Mount

Package / Case

6-UDFN Exposed Pad

Number of Pins

6

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

9.1A Ta

Drive Voltage (Max Rds On, Min Rds On)

1.2V 4.5V

Number of Elements

1

Power Dissipation (Max)

660mW Ta

Turn Off Delay Time

117 ns

Operating Temperature

-55°C~150°C TJ

Pin Count

6

Mount

Surface Mount

JESD-609 Code

e4

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

HIGH RELIABILITY

Terminal Position

DUAL

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

40

Packaging

Tape & Reel (TR)

JESD-30 Code

S-PDSO-N3

Rise Time

28ns

Drain to Source Voltage (Vdss)

12V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.03W

Case Connection

DRAIN

Turn On Delay Time

20 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

16m Ω @ 8.2A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2953pF @ 4V

Gate Charge (Qg) (Max) @ Vgs

42.6nC @ 5V

Number of Channels

2

Element Configuration

Single

Vgs (Max)

±8V

Fall Time (Typ)

93 ns

Continuous Drain Current (ID)

9.1A

Gate to Source Voltage (Vgs)

8V

Height

580μm

Length

2.05mm

Width

2.05mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Diodes Incorporated DMP1022UFDF-7

In stock

SKU: DMP1022UFDF-7-11
Manufacturer

Diodes Incorporated

Operating Temperature

-55°C~150°C TJ

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

6-UDFN Exposed Pad

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

9.5A Ta

Drive Voltage (Max Rds On, Min Rds On)

1.5V 4.5V

Number of Elements

1

Power Dissipation (Max)

730mW Ta

Terminal Position

DUAL

Factory Lead Time

14 Weeks

Packaging

Tape & Reel (TR)

Published

2015

JESD-609 Code

e4

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Additional Feature

HIGH RELIABILITY

Capacitance

2.712nF

Turn Off Delay Time

141 ns

Terminal Form

NO LEAD

Vgs(th) (Max) @ Id

800mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2712pF @ 10V

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Turn On Delay Time

25.1 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

15.3m Ω @ 4A, 4.5V

Base Part Number

DMP1022

JESD-30 Code

S-PDSO-N6

Gate Charge (Qg) (Max) @ Vgs

48.3nC @ 8V

Rise Time

39.8ns

Drain to Source Voltage (Vdss)

12V

Vgs (Max)

±8V

Fall Time (Typ)

147 ns

Continuous Drain Current (ID)

9.5A

Gate to Source Voltage (Vgs)

8V

Drain-source On Resistance-Max

0.026Ohm

Drain to Source Breakdown Voltage

-12V

RoHS Status

ROHS3 Compliant