Showing 529–540 of 7598 results
Transistors - FETs/MOSFETs - Single
Diodes Incorporated DMP2066LDM-7
In stock
Manufacturer |
Diodes Incorporated |
---|---|
JESD-609 Code |
e3 |
Package / Case |
SOT-23-6 |
Number of Pins |
6 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
4.6A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.25W Ta |
Turn Off Delay Time |
28 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Time@Peak Reflow Temperature-Max (s) |
40 |
Published |
2011 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Resistance |
40mOhm |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
HIGH RELIABILITY |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Drain to Source Voltage (Vdss) |
20V |
Number of Channels |
1 |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.25W |
Turn On Delay Time |
4.4 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
40m Ω @ 4.6A, 4.5V |
Vgs(th) (Max) @ Id |
1.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
820pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
10.1nC @ 4.5V |
Rise Time |
9.9ns |
Vgs (Max) |
±12V |
Fall Time (Typ) |
9.9 ns |
Pin Count |
6 |
Continuous Drain Current (ID) |
4.6A |
Threshold Voltage |
960mV |
Gate to Source Voltage (Vgs) |
12V |
DS Breakdown Voltage-Min |
20V |
Height |
1.1mm |
Length |
3mm |
Width |
1.6mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
Diodes Incorporated DMP2066LDMQ-7
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
4.6A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.25W Ta |
Additional Feature |
HIGH RELIABILITY |
Operating Temperature |
-55°C~150°C TJ |
Published |
2011 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Mount |
Surface Mount |
Factory Lead Time |
15 Weeks |
Rds On (Max) @ Id, Vgs |
40m Ω @ 4.6A, 4.5V |
Terminal Form |
GULL WING |
Time@Peak Reflow Temperature-Max (s) |
40 |
Reference Standard |
AEC-Q101 |
JESD-30 Code |
R-PDSO-G6 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Vgs(th) (Max) @ Id |
1.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
820pF @ 15V |
Terminal Position |
DUAL |
Gate Charge (Qg) (Max) @ Vgs |
10.1nC @ 4.5V |
Drain to Source Voltage (Vdss) |
20V |
Vgs (Max) |
±12V |
Continuous Drain Current (ID) |
4.6A |
Drain-source On Resistance-Max |
0.04Ohm |
Pulsed Drain Current-Max (IDM) |
18A |
DS Breakdown Voltage-Min |
20V |
Peak Reflow Temperature (Cel) |
260 |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMP2066LSN-7
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
7.994566mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
4.6A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.25W Ta |
Turn Off Delay Time |
28 ns |
Peak Reflow Temperature (Cel) |
260 |
Operating Temperature |
-55°C~150°C TJ |
Published |
2011 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
HIGH RELIABILITY |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Mount |
Surface Mount |
Factory Lead Time |
15 Weeks |
Drain to Source Voltage (Vdss) |
20V |
Pin Count |
3 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.25W |
Turn On Delay Time |
4.4 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
40m Ω @ 4.6A, 4.5V |
Vgs(th) (Max) @ Id |
1.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
820pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
10.1nC @ 4.5V |
Rise Time |
9.9ns |
Vgs (Max) |
±12V |
Fall Time (Typ) |
9.9 ns |
Time@Peak Reflow Temperature-Max (s) |
40 |
Continuous Drain Current (ID) |
4.6A |
Gate to Source Voltage (Vgs) |
12V |
Drain-source On Resistance-Max |
0.04Ohm |
Drain to Source Breakdown Voltage |
-20V |
Height |
1.3mm |
Length |
3.1mm |
Width |
1.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Number of Channels |
1 |
Lead Free |
Lead Free |
Diodes Incorporated DMP2066UFDE-7
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Packaging |
Tape & Reel (TR) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
6-UDFN Exposed Pad |
Number of Pins |
6 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
6.2A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
660mW Ta |
Turn Off Delay Time |
79.1 ns |
Time@Peak Reflow Temperature-Max (s) |
40 |
Factory Lead Time |
14 Weeks |
Published |
2012 |
JESD-609 Code |
e4 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
HIGH RELIABILITY |
Terminal Position |
DUAL |
Peak Reflow Temperature (Cel) |
260 |
Operating Temperature |
-55°C~150°C TJ |
JESD-30 Code |
S-PDSO-N3 |
Vgs (Max) |
±12V |
Fall Time (Typ) |
35.5 ns |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
Turn On Delay Time |
13.7 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
36m Ω @ 4.6A, 4.5V |
Vgs(th) (Max) @ Id |
1.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1537pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs |
14.4nC @ 4.5V |
Rise Time |
14ns |
Number of Channels |
1 |
Element Configuration |
Single |
Continuous Drain Current (ID) |
6.2A |
Gate to Source Voltage (Vgs) |
12V |
Drain Current-Max (Abs) (ID) |
4.2A |
Drain to Source Breakdown Voltage |
20V |
Height |
580μm |
Length |
2.05mm |
Width |
2.05mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Diodes Incorporated DMP2110U-7
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Current - Continuous Drain (Id) @ 25℃ |
3.5A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
Power Dissipation (Max) |
800mW Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
80m Ω @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
443pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs |
6nC @ 4.5V |
Drain to Source Voltage (Vdss) |
20V |
Vgs (Max) |
±10V |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMP21D0UFD-7
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
3-UDFN |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
820mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
490mW Ta |
Terminal Position |
DUAL |
Factory Lead Time |
17 Weeks |
Packaging |
Tape & Reel (TR) |
Published |
2011 |
JESD-609 Code |
e4 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
LOW THRESHOLD |
Turn Off Delay Time |
31.7 ns |
Peak Reflow Temperature (Cel) |
260 |
Gate Charge (Qg) (Max) @ Vgs |
3nC @ 4.5V |
Rise Time |
8ns |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Number of Channels |
1 |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
7.1 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
495m Ω @ 800mA, 4.5V |
Vgs(th) (Max) @ Id |
1.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
80pF @ 10V |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
3 |
Drain to Source Voltage (Vdss) |
20V |
Vgs (Max) |
±8V |
Fall Time (Typ) |
18.5 ns |
Continuous Drain Current (ID) |
820mA |
Gate to Source Voltage (Vgs) |
8V |
Drain-source On Resistance-Max |
0.495Ohm |
Drain to Source Breakdown Voltage |
-20V |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMP21D2UFA-7B
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Turn Off Delay Time |
330 ns |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
3-XFDFN |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
330mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
Number of Elements |
1 |
Terminal Form |
NO LEAD |
Factory Lead Time |
15 Weeks |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2014 |
JESD-609 Code |
e4 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Capacitance |
49pF |
Power Dissipation (Max) |
360mW Ta |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
49pF @ 15V |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
Turn On Delay Time |
10.3 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
1 Ω @ 200mA, 4.5V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
JESD-30 Code |
R-PSSO-N2 |
Gate Charge (Qg) (Max) @ Vgs |
0.8nC @ 4.5V |
Rise Time |
37.3ns |
Drain to Source Voltage (Vdss) |
20V |
Vgs (Max) |
±8V |
Fall Time (Typ) |
163 ns |
Continuous Drain Current (ID) |
330mA |
Gate to Source Voltage (Vgs) |
8V |
Drain-source On Resistance-Max |
1Ohm |
Drain to Source Breakdown Voltage |
-20V |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMP21D5UFB4-7B
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Contact Plating |
Gold |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
3-XFDFN |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
700mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
1.2V 5V |
Number of Elements |
1 |
Power Dissipation (Max) |
460mW Ta |
Peak Reflow Temperature (Cel) |
260 |
Factory Lead Time |
15 Weeks |
Packaging |
Tape & Reel (TR) |
Published |
2012 |
JESD-609 Code |
e4 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
970mOhm |
Additional Feature |
HIGH RELIABILITY |
Terminal Position |
BOTTOM |
Turn Off Delay Time |
20.2 ns |
Time@Peak Reflow Temperature-Max (s) |
40 |
Drain to Source Voltage (Vdss) |
20V |
Vgs (Max) |
±8V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
950mW |
Turn On Delay Time |
8.5 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
970m Ω @ 100mA, 5V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
46.1pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs |
500nC @ 4.5V |
Rise Time |
4.3ns |
Number of Channels |
1 |
Element Configuration |
Single |
Fall Time (Typ) |
19.2 ns |
Continuous Drain Current (ID) |
700mA |
Gate to Source Voltage (Vgs) |
8V |
Drain Current-Max (Abs) (ID) |
0.5A |
DS Breakdown Voltage-Min |
20V |
Height |
350μm |
Length |
1.05mm |
Width |
650μm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Diodes Incorporated DMP21D5UFD-7
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Turn Off Delay Time |
20.2 ns |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
3-UDFN |
Number of Pins |
3 |
Current - Continuous Drain (Id) @ 25℃ |
600mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
1.2V 4.5V |
ECCN Code |
EAR99 |
Factory Lead Time |
6 Weeks |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2012 |
JESD-609 Code |
e4 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Power Dissipation (Max) |
400mW Ta |
Peak Reflow Temperature (Cel) |
260 |
Rise Time |
4.3ns |
Drain to Source Voltage (Vdss) |
20V |
Turn On Delay Time |
8.5 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
1 Ω @ 100mA, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
46.1pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs |
800nC @ 8V |
Time@Peak Reflow Temperature-Max (s) |
40 |
Number of Channels |
1 |
Vgs (Max) |
±8V |
Fall Time (Typ) |
19.2 ns |
Continuous Drain Current (ID) |
600mA |
Gate to Source Voltage (Vgs) |
8V |
Drain to Source Breakdown Voltage |
-20V |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Diodes Incorporated DMP2240UW-7
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Part Status |
Active |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SC-70, SOT-323 |
Number of Pins |
3 |
Weight |
6.010099mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2010 |
JESD-609 Code |
e3 |
Number of Elements |
1 |
Factory Lead Time |
16 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
LOW THRESHOLD |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
3 |
Pbfree Code |
yes |
Number of Channels |
1 |
Drive Voltage (Max Rds On,Min Rds On) |
1.8V 4.5V |
Vgs (Max) |
±12V |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
12.5 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
150m Ω @ 2A, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
320pF @ 16V |
Current - Continuous Drain (Id) @ 25°C |
1.5A Ta |
Rise Time |
10.3ns |
Drain to Source Voltage (Vdss) |
20V |
Power Dissipation-Max |
250mW Ta |
Element Configuration |
Single |
Fall Time (Typ) |
10.3 ns |
Turn-Off Delay Time |
46.5 ns |
Continuous Drain Current (ID) |
1.5A |
Gate to Source Voltage (Vgs) |
12V |
DS Breakdown Voltage-Min |
20V |
Height |
1mm |
Length |
2.2mm |
Width |
1.35mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMP22D4UFA-7B
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Package / Case |
3-XFDFN |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
330mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
1.2V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
400mW Ta |
Turn Off Delay Time |
31.1 ns |
Peak Reflow Temperature (Cel) |
260 |
Operating Temperature |
-55°C~150°C TJ |
Published |
2014 |
JESD-609 Code |
e4 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
HIGH RELIABILITY |
Terminal Position |
DUAL |
Terminal Form |
NO LEAD |
Mount |
Surface Mount |
Factory Lead Time |
15 Weeks |
Rise Time |
5.7ns |
Number of Channels |
1 |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
Turn On Delay Time |
5.8 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
1.9 Ω @ 100mA, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
28.7pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
0.4nC @ 4.5V |
Vgs (Max) |
±8V |
Fall Time (Typ) |
16.4 ns |
Time@Peak Reflow Temperature-Max (s) |
40 |
Continuous Drain Current (ID) |
330mA |
Gate to Source Voltage (Vgs) |
8V |
Drain Current-Max (Abs) (ID) |
0.25A |
Drain to Source Breakdown Voltage |
20V |
Height |
350μm |
Length |
650μm |
Width |
850μm |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
Diodes Incorporated DMP22M2UPS-13
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
Number of Elements |
1 |
Terminal Position |
DUAL |
Power Dissipation (Max) |
2.3W Ta |
Packaging |
Tape & Reel (TR) |
Published |
2009 |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
5 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Mount |
Surface Mount |
Factory Lead Time |
23 Weeks |
Rds On (Max) @ Id, Vgs |
2.5m Ω @ 25A, 10V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
JESD-30 Code |
R-PDSO-F5 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Vgs(th) (Max) @ Id |
1.4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
12826pF @ 10V |
Terminal Form |
FLAT |
Gate Charge (Qg) (Max) @ Vgs |
476nC @ 10V |
Drain to Source Voltage (Vdss) |
20V |
Vgs (Max) |
±12V |
Continuous Drain Current (ID) |
60A |
Drain-source On Resistance-Max |
0.0025Ohm |
Pulsed Drain Current-Max (IDM) |
100A |
DS Breakdown Voltage-Min |
20V |
Reach Compliance Code |
not_compliant |
RoHS Status |
ROHS3 Compliant |