Showing 553–564 of 7598 results
Transistors - FETs/MOSFETs - Single
Diodes Incorporated DMP3028LFDE-13
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
6-UDFN Exposed Pad |
Number of Pins |
6 |
Current - Continuous Drain (Id) @ 25℃ |
6.8A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
660mW Ta |
Terminal Finish |
Matte Tin (Sn) |
Factory Lead Time |
22 Weeks |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Turn Off Delay Time |
60.5 ns |
Peak Reflow Temperature (Cel) |
260 |
Rise Time |
17.1ns |
Drain to Source Voltage (Vdss) |
30V |
Number of Channels |
1 |
Turn On Delay Time |
9.7 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
32m Ω @ 7A, 10V |
Vgs(th) (Max) @ Id |
2.4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1241pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
Time@Peak Reflow Temperature-Max (s) |
40 |
Configuration |
Single |
Vgs (Max) |
±20V |
Fall Time (Typ) |
40.4 ns |
Continuous Drain Current (ID) |
6.8A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-30V |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMP3028LK3-13
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Published |
2013 |
Mounting Type |
Surface Mount |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
27A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.6W Ta |
Operating Temperature |
-55°C~150°C TJ |
Terminal Form |
GULL WING |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
HIGH RELIABILITY |
Terminal Position |
SINGLE |
Mount |
Surface Mount |
Factory Lead Time |
18 Weeks |
Vgs(th) (Max) @ Id |
2.4V @ 250μA |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
JESD-30 Code |
R-PSSO-G2 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
25m Ω @ 7A, 10V |
Input Capacitance (Ciss) (Max) @ Vds |
1241pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
27A |
Drain-source On Resistance-Max |
0.025Ohm |
Pulsed Drain Current-Max (IDM) |
40A |
DS Breakdown Voltage-Min |
30V |
Avalanche Energy Rating (Eas) |
24 mJ |
Reference Standard |
AEC-Q101 |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMP3035SFG-7
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerVDFN |
Number of Pins |
8 |
Weight |
72.007789mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
8.5A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
950mW Ta |
Terminal Position |
DUAL |
Factory Lead Time |
15 Weeks |
Packaging |
Tape & Reel (TR) |
Published |
2012 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
5 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
HIGH RELIABILITY |
Turn Off Delay Time |
50 ns |
Peak Reflow Temperature (Cel) |
260 |
Input Capacitance (Ciss) (Max) @ Vds |
1633pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
JESD-30 Code |
S-PDSO-N5 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Number of Channels |
1 |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
Turn On Delay Time |
8.5 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
20m Ω @ 8A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
8 |
Rise Time |
14ns |
Vgs (Max) |
±25V |
Fall Time (Typ) |
25.8 ns |
Continuous Drain Current (ID) |
8.5A |
Gate to Source Voltage (Vgs) |
25V |
Drain Current-Max (Abs) (ID) |
7A |
Drain-source On Resistance-Max |
0.02Ohm |
Drain to Source Breakdown Voltage |
30V |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMP3036SFV-13
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Factory Lead Time |
22 Weeks |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerVDFN |
Current - Continuous Drain (Id) @ 25℃ |
30A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
Power Dissipation (Max) |
2.3W Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Part Status |
Active |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
20m Ω @ 8A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1931pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
16.5nC @ 10V |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±25V |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMP3036SFV-7
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Factory Lead Time |
22 Weeks |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerVDFN |
Current - Continuous Drain (Id) @ 25℃ |
30A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
Power Dissipation (Max) |
2.3W Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Part Status |
Active |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
20m Ω @ 8A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1931pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
16.5nC @ 10V |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±25V |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMP3036SSS-13
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Power Dissipation (Max) |
1.4W Ta |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
19.5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
ECCN Code |
EAR99 |
Factory Lead Time |
23 Weeks |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2015 |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
Number of Elements |
1 |
Terminal Finish |
Matte Tin (Sn) |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1931pF @ 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
20m Ω @ 9A, 10V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Gate Charge (Qg) (Max) @ Vgs |
16.5nC @ 10V |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±25V |
Continuous Drain Current (ID) |
19.5A |
Drain Current-Max (Abs) (ID) |
11.4A |
Drain-source On Resistance-Max |
0.02Ohm |
DS Breakdown Voltage-Min |
30V |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMP3037LSS-13
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Turn Off Delay Time |
55.8 ns |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
73.992255mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
5.8A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Additional Feature |
HIGH RELIABILITY |
Factory Lead Time |
23 Weeks |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Power Dissipation (Max) |
1.2W Ta |
Capacitance |
931pF |
Vgs(th) (Max) @ Id |
2.4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
931pF @ 15V |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
3.2 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
32m Ω @ 7A, 10V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Gate Charge (Qg) (Max) @ Vgs |
19.3nC @ 10V |
Rise Time |
11.5ns |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
30.8 ns |
Continuous Drain Current (ID) |
5.8A |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.032Ohm |
Drain to Source Breakdown Voltage |
-30V |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMP3050LVT-7
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Terminal Position |
DUAL |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
4.5A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.8W Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Turn Off Delay Time |
28.4 ns |
Published |
2012 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
HIGH RELIABILITY |
Mount |
Surface Mount |
Factory Lead Time |
17 Weeks |
Gate Charge (Qg) (Max) @ Vgs |
10.5nC @ 10V |
Rise Time |
4.9ns |
Reference Standard |
AEC-Q101 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
6.8 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
50m Ω @ 4.5A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
620pF @ 15V |
Peak Reflow Temperature (Cel) |
260 |
Terminal Form |
GULL WING |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±25V |
Fall Time (Typ) |
12.4 ns |
Continuous Drain Current (ID) |
4.5A |
Gate to Source Voltage (Vgs) |
25V |
Drain-source On Resistance-Max |
0.05Ohm |
Drain to Source Breakdown Voltage |
-30V |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Time@Peak Reflow Temperature-Max (s) |
40 |
Lead Free |
Lead Free |
Diodes Incorporated DMP3056LVT-7
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Current - Continuous Drain (Id) @ 25℃ |
4.3A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
1.38W |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
50m Ω @ 6A, 10V |
Vgs(th) (Max) @ Id |
2.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
642pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
11.8nC @ 10V |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±25V |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMP3085LSS-13
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Packaging |
Tape & Reel (TR) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
3.8A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.3W Ta |
Turn Off Delay Time |
31 ns |
Peak Reflow Temperature (Cel) |
260 |
Factory Lead Time |
23 Weeks |
Published |
2013 |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
HIGH RELIABILITY |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
30 |
Vgs (Max) |
±20V |
Fall Time (Typ) |
14.6 ns |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
4.8 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
70m Ω @ 5.3A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
563pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
5.2nC @ 4.5V |
Rise Time |
5ns |
Drain to Source Voltage (Vdss) |
30V |
Reference Standard |
AEC-Q101 |
Element Configuration |
Single |
Continuous Drain Current (ID) |
3.8A |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.07Ohm |
DS Breakdown Voltage-Min |
30V |
Height |
1.5mm |
Length |
4.95mm |
Width |
3.95mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Diodes Incorporated DMP3100L-7
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Terminal Form |
GULL WING |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
1.437803g |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
2.7A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Power Dissipation (Max) |
1.08W Ta |
Published |
2010 |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Terminal Position |
DUAL |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds |
227pF @ 10V |
Drain to Source Voltage (Vdss) |
30V |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.08W |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
100m Ω @ 2.7A, 10V |
Vgs(th) (Max) @ Id |
2.1V @ 250μA |
Time@Peak Reflow Temperature-Max (s) |
40 |
Peak Reflow Temperature (Cel) |
260 |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
2.7A |
Gate to Source Voltage (Vgs) |
20V |
Pulsed Drain Current-Max (IDM) |
8A |
Height |
1mm |
Length |
2.9mm |
Width |
1.3mm |
Radiation Hardening |
No |
Pin Count |
3 |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMP3105LVT-7
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Packaging |
Tape & Reel (TR) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
3.1A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.15W Ta |
Turn Off Delay Time |
269 ns |
Terminal Form |
GULL WING |
Factory Lead Time |
15 Weeks |
Published |
2011 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Resistance |
75mOhm |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
HIGH RELIABILITY |
Terminal Position |
DUAL |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
260 |
Rise Time |
17.7ns |
Drain to Source Voltage (Vdss) |
30V |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.75W |
Turn On Delay Time |
9.7 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
75m Ω @ 4.2A, 10V |
Vgs(th) (Max) @ Id |
1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
839pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
19.8nC @ 10V |
Time@Peak Reflow Temperature-Max (s) |
40 |
Number of Channels |
1 |
Vgs (Max) |
±12V |
Fall Time (Typ) |
64 ns |
Continuous Drain Current (ID) |
3.9A |
Gate to Source Voltage (Vgs) |
12V |
DS Breakdown Voltage-Min |
30V |
Height |
900μm |
Length |
2.9mm |
Width |
1.6mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |