Showing 637–648 of 7598 results
Transistors - FETs/MOSFETs - Single
Diodes Incorporated DMTH6004SPSQ-13
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Part Status |
Active |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Number of Pins |
8 |
Current - Continuous Drain (Id) @ 25℃ |
25A Ta 100A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
2.1W Ta 167W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2015 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Factory Lead Time |
22 Weeks |
ECCN Code |
EAR99 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Terminal Finish |
Matte Tin (Sn) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
3.1m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
4556pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs |
95.4nC @ 10V |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
100A |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMTH6005LK3Q-13
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Published |
2016 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.1W Ta 100W Tc |
Operating Temperature |
-55°C~175°C TJ |
Terminal Position |
SINGLE |
Factory Lead Time |
23 Weeks |
Series |
Automotive, AEC-Q101 |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
HIGH RELIABILITY |
Packaging |
Tape & Reel (TR) |
Terminal Form |
GULL WING |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2962pF @ 30V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
JESD-30 Code |
R-PSSO-G2 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
5.6m Ω @ 50A, 10V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Gate Charge (Qg) (Max) @ Vgs |
47.1nC @ 10V |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
90A |
Drain-source On Resistance-Max |
0.0056Ohm |
Pulsed Drain Current-Max (IDM) |
150A |
DS Breakdown Voltage-Min |
60V |
Avalanche Energy Rating (Eas) |
98 mJ |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMTH6005LPS-13
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Part Status |
Active |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Number of Pins |
8 |
Current - Continuous Drain (Id) @ 25℃ |
20.6A Ta 100A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
3.2W Ta 150W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2015 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Factory Lead Time |
22 Weeks |
ECCN Code |
EAR99 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Terminal Finish |
Matte Tin (Sn) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
5.5m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2962pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs |
47.1nC @ 10V |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
100A |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMTH6009LK3-13
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Surface Mount |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
14.2A Ta 59A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
3.2W Ta 60W Tc |
Operating Temperature |
-55°C~175°C TJ |
Published |
2015 |
JESD-609 Code |
e3 |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
HIGH RELIABILITY |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Mount |
Surface Mount |
Factory Lead Time |
23 Weeks |
Input Capacitance (Ciss) (Max) @ Vds |
1925pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs |
33.5nC @ 10V |
JESD-30 Code |
R-PSSO-G2 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
10m Ω @ 13.5A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250μA |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±16V |
Continuous Drain Current (ID) |
59A |
Drain Current-Max (Abs) (ID) |
14.2A |
Drain-source On Resistance-Max |
0.01Ohm |
Pulsed Drain Current-Max (IDM) |
90A |
DS Breakdown Voltage-Min |
60V |
Avalanche Energy Rating (Eas) |
20.6 mJ |
Reference Standard |
AEC-Q101 |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMTH6010LK3-13
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Surface Mount |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
14.8A Ta 70A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
3.1W Ta |
Operating Temperature |
-55°C~175°C TJ |
Published |
2015 |
JESD-609 Code |
e3 |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
HIGH RELIABILITY |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Mount |
Surface Mount |
Factory Lead Time |
23 Weeks |
Input Capacitance (Ciss) (Max) @ Vds |
2090pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs |
41.3nC @ 10V |
JESD-30 Code |
R-PSSO-G2 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
8m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
70A |
Drain Current-Max (Abs) (ID) |
14.8A |
Drain-source On Resistance-Max |
0.012Ohm |
Pulsed Drain Current-Max (IDM) |
130A |
DS Breakdown Voltage-Min |
60V |
Avalanche Energy Rating (Eas) |
20 mJ |
Reference Standard |
AEC-Q101 |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMTH6010LPS-13
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Part Status |
Active |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Number of Pins |
8 |
Current - Continuous Drain (Id) @ 25℃ |
13.5A Ta 100A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
2.6W Ta 136W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2015 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Factory Lead Time |
22 Weeks |
ECCN Code |
EAR99 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Terminal Finish |
Matte Tin (Sn) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
8m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2090pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs |
41.3nC @ 10V |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
100A |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMTH6010SCT
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Part Status |
Active |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
2.8W Ta 125W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2016 |
Series |
Automotive, AEC-Q101 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Factory Lead Time |
24 Weeks |
ECCN Code |
EAR99 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Terminal Finish |
Matte Tin (Sn) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
7.2m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1940pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs |
36.3nC @ 10V |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
100A |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMTH6010SK3Q-13
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Terminal Form |
GULL WING |
Mounting Type |
Surface Mount |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
16.3A Ta 70A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
3.1W Ta |
Operating Temperature |
-55°C~175°C TJ |
Published |
2016 |
Series |
Automotive, AEC-Q101 |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
HIGH RELIABILITY |
Terminal Position |
SINGLE |
Mount |
Surface Mount |
Factory Lead Time |
23 Weeks |
Input Capacitance (Ciss) (Max) @ Vds |
2841pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs |
38.1nC @ 10V |
JESD-30 Code |
R-PSSO-G2 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
8m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Reach Compliance Code |
not_compliant |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
70A |
Drain Current-Max (Abs) (ID) |
16.3A |
Drain-source On Resistance-Max |
0.008Ohm |
Pulsed Drain Current-Max (IDM) |
80A |
DS Breakdown Voltage-Min |
60V |
Avalanche Energy Rating (Eas) |
27.7 mJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated DMTH8012LPSW-13
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
53.7A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
3.1W Ta |
Terminal Form |
FLAT |
Factory Lead Time |
22 Weeks |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
5 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
HIGH RELIABILITY |
Terminal Position |
DUAL |
Operating Temperature |
-55°C~175°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1949pF @ 40V |
Reference Standard |
AEC-Q101 |
JESD-30 Code |
R-PDSO-F5 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
17m Ω @ 12A, 10V |
Reach Compliance Code |
not_compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
Drain to Source Voltage (Vdss) |
80V |
Vgs (Max) |
±20V |
Drain Current-Max (Abs) (ID) |
10.3A |
Drain-source On Resistance-Max |
0.017Ohm |
Pulsed Drain Current-Max (IDM) |
80A |
DS Breakdown Voltage-Min |
80V |
Avalanche Energy Rating (Eas) |
6.7 mJ |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated MMBF170Q-13-F
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Factory Lead Time |
14 Weeks |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Current - Continuous Drain (Id) @ 25℃ |
500mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
300mW Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2004 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
5 Ω @ 200mA, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
40pF @ 10V |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
500mA |
RoHS Status |
RoHS Compliant |
Diodes Incorporated VN10LP
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Packaging |
Bulk |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins |
3 |
Weight |
453.59237mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
270mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
625mW Ta |
Terminal Form |
WIRE |
Factory Lead Time |
17 Weeks |
Published |
2006 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
5Ohm |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
60V |
Terminal Position |
BOTTOM |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
260 |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
270mA |
Pin Count |
3 |
Lead Pitch |
1.27mm |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
625mW |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds |
60pF @ 25V |
Current Rating |
270mA |
Time@Peak Reflow Temperature-Max (s) |
40 |
Threshold Voltage |
2.5V |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
0.27A |
Drain to Source Breakdown Voltage |
60V |
Feedback Cap-Max (Crss) |
5 pF |
Height |
4.01mm |
Length |
4.77mm |
Width |
2.41mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Diodes Incorporated VN10LPSTOA
In stock
Manufacturer |
Diodes Incorporated |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Through Hole |
Package / Case |
E-Line-3, Formed Leads |
Weight |
453.59237mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
270mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
Power Dissipation (Max) |
625mW Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Time@Peak Reflow Temperature-Max (s) |
40 |
Mount |
Surface Mount, Through Hole |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
60V |
Terminal Form |
WIRE |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
270mA |
Published |
2012 |
Pin Count |
3 |
Continuous Drain Current (ID) |
270mA |
Gate to Source Voltage (Vgs) |
20V |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
625mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds |
60pF @ 25V |
Vgs (Max) |
±20V |
JESD-30 Code |
R-PSIP-W3 |
Number of Channels |
1 |
Drain Current-Max (Abs) (ID) |
0.27A |
Drain-source On Resistance-Max |
7.5Ohm |
Drain to Source Breakdown Voltage |
60V |
Height |
4.01mm |
Length |
4.77mm |
Width |
2.41mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |