Transistors - FETs/MOSFETs - Single

Diodes Incorporated DMTH6004SPSQ-13

In stock

SKU: DMTH6004SPSQ-13-11
Manufacturer

Diodes Incorporated

Part Status

Active

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Current - Continuous Drain (Id) @ 25℃

25A Ta 100A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

2.1W Ta 167W Tc

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Published

2015

JESD-609 Code

e3

Pbfree Code

yes

Factory Lead Time

22 Weeks

ECCN Code

EAR99

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Terminal Finish

Matte Tin (Sn)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

3.1m Ω @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

4556pF @ 30V

Gate Charge (Qg) (Max) @ Vgs

95.4nC @ 10V

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Continuous Drain Current (ID)

100A

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMTH6005LK3Q-13

In stock

SKU: DMTH6005LK3Q-13-11
Manufacturer

Diodes Incorporated

Published

2016

Mount

Surface Mount

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

90A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2.1W Ta 100W Tc

Operating Temperature

-55°C~175°C TJ

Terminal Position

SINGLE

Factory Lead Time

23 Weeks

Series

Automotive, AEC-Q101

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

HIGH RELIABILITY

Packaging

Tape & Reel (TR)

Terminal Form

GULL WING

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2962pF @ 30V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

5.6m Ω @ 50A, 10V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Gate Charge (Qg) (Max) @ Vgs

47.1nC @ 10V

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Continuous Drain Current (ID)

90A

Drain-source On Resistance-Max

0.0056Ohm

Pulsed Drain Current-Max (IDM)

150A

DS Breakdown Voltage-Min

60V

Avalanche Energy Rating (Eas)

98 mJ

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMTH6005LPS-13

In stock

SKU: DMTH6005LPS-13-11
Manufacturer

Diodes Incorporated

Part Status

Active

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Current - Continuous Drain (Id) @ 25℃

20.6A Ta 100A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

3.2W Ta 150W Tc

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Published

2015

JESD-609 Code

e3

Pbfree Code

yes

Factory Lead Time

22 Weeks

ECCN Code

EAR99

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Terminal Finish

Matte Tin (Sn)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

5.5m Ω @ 50A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2962pF @ 30V

Gate Charge (Qg) (Max) @ Vgs

47.1nC @ 10V

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Continuous Drain Current (ID)

100A

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMTH6009LK3-13

In stock

SKU: DMTH6009LK3-13-11
Manufacturer

Diodes Incorporated

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

14.2A Ta 59A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

3.2W Ta 60W Tc

Operating Temperature

-55°C~175°C TJ

Published

2015

JESD-609 Code

e3

Packaging

Tape & Reel (TR)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

HIGH RELIABILITY

Terminal Position

SINGLE

Terminal Form

GULL WING

Mount

Surface Mount

Factory Lead Time

23 Weeks

Input Capacitance (Ciss) (Max) @ Vds

1925pF @ 30V

Gate Charge (Qg) (Max) @ Vgs

33.5nC @ 10V

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

10m Ω @ 13.5A, 10V

Vgs(th) (Max) @ Id

2V @ 250μA

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±16V

Continuous Drain Current (ID)

59A

Drain Current-Max (Abs) (ID)

14.2A

Drain-source On Resistance-Max

0.01Ohm

Pulsed Drain Current-Max (IDM)

90A

DS Breakdown Voltage-Min

60V

Avalanche Energy Rating (Eas)

20.6 mJ

Reference Standard

AEC-Q101

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMTH6010LK3-13

In stock

SKU: DMTH6010LK3-13-11
Manufacturer

Diodes Incorporated

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

14.8A Ta 70A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

3.1W Ta

Operating Temperature

-55°C~175°C TJ

Published

2015

JESD-609 Code

e3

Packaging

Tape & Reel (TR)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

HIGH RELIABILITY

Terminal Position

SINGLE

Terminal Form

GULL WING

Mount

Surface Mount

Factory Lead Time

23 Weeks

Input Capacitance (Ciss) (Max) @ Vds

2090pF @ 30V

Gate Charge (Qg) (Max) @ Vgs

41.3nC @ 10V

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

8m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Continuous Drain Current (ID)

70A

Drain Current-Max (Abs) (ID)

14.8A

Drain-source On Resistance-Max

0.012Ohm

Pulsed Drain Current-Max (IDM)

130A

DS Breakdown Voltage-Min

60V

Avalanche Energy Rating (Eas)

20 mJ

Reference Standard

AEC-Q101

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMTH6010LPS-13

In stock

SKU: DMTH6010LPS-13-11
Manufacturer

Diodes Incorporated

Part Status

Active

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Current - Continuous Drain (Id) @ 25℃

13.5A Ta 100A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

2.6W Ta 136W Tc

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Published

2015

JESD-609 Code

e3

Pbfree Code

yes

Factory Lead Time

22 Weeks

ECCN Code

EAR99

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Terminal Finish

Matte Tin (Sn)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

8m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2090pF @ 30V

Gate Charge (Qg) (Max) @ Vgs

41.3nC @ 10V

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Continuous Drain Current (ID)

100A

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMTH6010SCT

In stock

SKU: DMTH6010SCT-11
Manufacturer

Diodes Incorporated

Part Status

Active

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Current - Continuous Drain (Id) @ 25℃

100A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

2.8W Ta 125W Tc

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2016

Series

Automotive, AEC-Q101

JESD-609 Code

e3

Pbfree Code

yes

Factory Lead Time

24 Weeks

ECCN Code

EAR99

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Terminal Finish

Matte Tin (Sn)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

7.2m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1940pF @ 30V

Gate Charge (Qg) (Max) @ Vgs

36.3nC @ 10V

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Continuous Drain Current (ID)

100A

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMTH6010SK3Q-13

In stock

SKU: DMTH6010SK3Q-13-11
Manufacturer

Diodes Incorporated

Terminal Form

GULL WING

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

16.3A Ta 70A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

3.1W Ta

Operating Temperature

-55°C~175°C TJ

Published

2016

Series

Automotive, AEC-Q101

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

HIGH RELIABILITY

Terminal Position

SINGLE

Mount

Surface Mount

Factory Lead Time

23 Weeks

Input Capacitance (Ciss) (Max) @ Vds

2841pF @ 30V

Gate Charge (Qg) (Max) @ Vgs

38.1nC @ 10V

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

8m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Reach Compliance Code

not_compliant

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Continuous Drain Current (ID)

70A

Drain Current-Max (Abs) (ID)

16.3A

Drain-source On Resistance-Max

0.008Ohm

Pulsed Drain Current-Max (IDM)

80A

DS Breakdown Voltage-Min

60V

Avalanche Energy Rating (Eas)

27.7 mJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

RoHS Status

ROHS3 Compliant

Diodes Incorporated DMTH8012LPSW-13

In stock

SKU: DMTH8012LPSW-13-11
Manufacturer

Diodes Incorporated

Packaging

Tape & Reel (TR)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Surface Mount

YES

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

53.7A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

3.1W Ta

Terminal Form

FLAT

Factory Lead Time

22 Weeks

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

HIGH RELIABILITY

Terminal Position

DUAL

Operating Temperature

-55°C~175°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1949pF @ 40V

Reference Standard

AEC-Q101

JESD-30 Code

R-PDSO-F5

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

17m Ω @ 12A, 10V

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Drain to Source Voltage (Vdss)

80V

Vgs (Max)

±20V

Drain Current-Max (Abs) (ID)

10.3A

Drain-source On Resistance-Max

0.017Ohm

Pulsed Drain Current-Max (IDM)

80A

DS Breakdown Voltage-Min

80V

Avalanche Energy Rating (Eas)

6.7 mJ

RoHS Status

ROHS3 Compliant

Diodes Incorporated MMBF170Q-13-F

In stock

SKU: MMBF170Q-13-F-11
Manufacturer

Diodes Incorporated

Factory Lead Time

14 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25℃

500mA Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

300mW Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2004

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

5 Ω @ 200mA, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

40pF @ 10V

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Continuous Drain Current (ID)

500mA

RoHS Status

RoHS Compliant

Diodes Incorporated VN10LP

In stock

SKU: VN10LP-11
Manufacturer

Diodes Incorporated

Packaging

Bulk

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Number of Pins

3

Weight

453.59237mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

270mA Ta

Drive Voltage (Max Rds On, Min Rds On)

5V 10V

Number of Elements

1

Power Dissipation (Max)

625mW Ta

Terminal Form

WIRE

Factory Lead Time

17 Weeks

Published

2006

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

5Ohm

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

60V

Terminal Position

BOTTOM

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

260

Vgs (Max)

±20V

Continuous Drain Current (ID)

270mA

Pin Count

3

Lead Pitch

1.27mm

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

625mW

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

5 Ω @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

60pF @ 25V

Current Rating

270mA

Time@Peak Reflow Temperature-Max (s)

40

Threshold Voltage

2.5V

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

0.27A

Drain to Source Breakdown Voltage

60V

Feedback Cap-Max (Crss)

5 pF

Height

4.01mm

Length

4.77mm

Width

2.41mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Diodes Incorporated VN10LPSTOA

In stock

SKU: VN10LPSTOA-11
Manufacturer

Diodes Incorporated

JESD-609 Code

e3

Mounting Type

Through Hole

Package / Case

E-Line-3, Formed Leads

Weight

453.59237mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

270mA Ta

Drive Voltage (Max Rds On, Min Rds On)

5V 10V

Power Dissipation (Max)

625mW Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Cut Tape (CT)

Time@Peak Reflow Temperature-Max (s)

40

Mount

Surface Mount, Through Hole

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

60V

Terminal Form

WIRE

Peak Reflow Temperature (Cel)

260

Current Rating

270mA

Published

2012

Pin Count

3

Continuous Drain Current (ID)

270mA

Gate to Source Voltage (Vgs)

20V

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

625mW

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

5 Ω @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

60pF @ 25V

Vgs (Max)

±20V

JESD-30 Code

R-PSIP-W3

Number of Channels

1

Drain Current-Max (Abs) (ID)

0.27A

Drain-source On Resistance-Max

7.5Ohm

Drain to Source Breakdown Voltage

60V

Height

4.01mm

Length

4.77mm

Width

2.41mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free