Showing 649–660 of 7598 results
Diodes Incorporated ZVN0124ASTOB
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Through Hole |
| Package / Case |
E-Line-3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Turn Off Delay Time |
16 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Through Hole |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
240V |
| Terminal Form |
WIRE |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
unknown |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16 Ω @ 250mA, 10V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-W3 |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Current Rating |
160mA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
85pF @ 25V |
| Rise Time |
8ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
160mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
240V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN0545A
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
17 Weeks |
| Packaging |
Bulk |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
450V |
| Terminal Form |
WIRE |
| Turn Off Delay Time |
16 ns |
| Current Rating |
90mA |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
50 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
70pF @ 25V |
| Rise Time |
7ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Continuous Drain Current (ID) |
90mA |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.09A |
| Drain to Source Breakdown Voltage |
450V |
| Feedback Cap-Max (Crss) |
4 pF |
| Height |
4.01mm |
| Length |
4.77mm |
| Width |
2.41mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated ZVN0545GTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Published |
2006 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
140mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Turn Off Delay Time |
16 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
140mA |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
50Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
450V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Rise Time |
7ns |
| Pin Count |
4 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
50 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
70pF @ 25V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Continuous Drain Current (ID) |
140mA |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
450V |
| Pulsed Drain Current-Max (IDM) |
0.6A |
| Height |
1.65mm |
| Length |
6.7mm |
| Width |
3.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PDSO-G4 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN2106ASTZ
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Through Hole |
| Package / Case |
E-Line-3 |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
450mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Terminal Form |
WIRE |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
2Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
60V |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
75pF @ 18V |
| Current Rating |
450mA |
| Pin Count |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
450mA |
| Peak Reflow Temperature (Cel) |
260 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.45A |
| Drain to Source Breakdown Voltage |
60V |
| Height |
4.01mm |
| Length |
4.77mm |
| Width |
2.41mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN2106GTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Published |
1997 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
710mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Turn Off Delay Time |
12 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
710mA |
| Factory Lead Time |
17 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
2Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
60V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
75pF @ 18V |
| Rise Time |
8ns |
| Pin Count |
4 |
| JESD-30 Code |
R-PDSO-G4 |
| Continuous Drain Current (ID) |
710mA |
| Threshold Voltage |
2.4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
8A |
| Dual Supply Voltage |
60V |
| Nominal Vgs |
2.4 V |
| Height |
1.65mm |
| Length |
6.7mm |
| Width |
3.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN2110ASTOA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Through Hole |
| Package / Case |
E-Line-3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
320mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Turn Off Delay Time |
13 ns |
| Reach Compliance Code |
unknown |
| Mount |
Through Hole |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
100V |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
230mA |
| Rds On (Max) @ Id, Vgs |
4 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| JESD-30 Code |
R-PSIP-W3 |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Input Capacitance (Ciss) (Max) @ Vds |
75pF @ 25V |
| Rise Time |
8ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
320mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.32A |
| Drain-source On Resistance-Max |
4Ohm |
| Drain to Source Breakdown Voltage |
100V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN2110GTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Published |
2002 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
500mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Turn Off Delay Time |
8 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
500mA |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
4Ohm |
| Additional Feature |
FAST SWITCHING |
| Voltage - Rated DC |
100V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Contact Plating |
Tin |
| Factory Lead Time |
17 Weeks |
| Rise Time |
4ns |
| Pin Count |
4 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
75pF @ 25V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Continuous Drain Current (ID) |
500mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.5A |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
6A |
| Height |
1.65mm |
| Length |
6.7mm |
| Width |
3.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PDSO-G4 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN2120ASTOA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Package / Case |
E-Line-3 |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
180mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Terminal Form |
WIRE |
| Turn Off Delay Time |
20 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
200V |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Transistor Application |
SWITCHING |
| Current Rating |
180mA |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
10 Ω @ 250mA, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Peak Reflow Temperature (Cel) |
260 |
| Input Capacitance (Ciss) (Max) @ Vds |
85pF @ 25V |
| Rise Time |
8ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
180mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| RoHS Status |
RoHS Compliant |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN2120GTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Published |
2006 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
320mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Turn Off Delay Time |
20 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
320mA |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
10Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
200V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Vgs (Max) |
±20V |
| Pin Count |
4 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10 Ω @ 250mA, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
85pF @ 25V |
| Rise Time |
8ns |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
320mA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.32A |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
2A |
| Height |
1.65mm |
| Length |
6.7mm |
| Width |
3.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN2535ASTZ
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Pin Count |
3 |
| Package / Case |
E-Line-3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
16 ns |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
350V |
| Terminal Form |
WIRE |
| Reach Compliance Code |
unknown |
| Current Rating |
90mA |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
70pF @ 25V |
| Rise Time |
7ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
35 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Qualification Status |
Not Qualified |
| JESD-30 Code |
R-PSIP-W3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
90mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.09A |
| Drain-source On Resistance-Max |
40Ohm |
| Drain to Source Breakdown Voltage |
350V |
| RoHS Status |
RoHS Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN3306ASTOA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Through Hole |
| Package / Case |
E-Line-3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
270mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
625mW Ta |
| Turn Off Delay Time |
6 ns |
| Reach Compliance Code |
unknown |
| Mount |
Through Hole |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
60V |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
270mA |
| Rds On (Max) @ Id, Vgs |
5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| JESD-30 Code |
R-PSIP-W3 |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
625mW |
| Turn On Delay Time |
5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Input Capacitance (Ciss) (Max) @ Vds |
35pF @ 18V |
| Rise Time |
7ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
270mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.27A |
| Drain-source On Resistance-Max |
5Ohm |
| Drain to Source Breakdown Voltage |
60V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN3310A
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Bulk |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
625mW Ta |
| Turn Off Delay Time |
6 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
17 Weeks |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
10Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
100V |
| Terminal Position |
BOTTOM |
| Terminal Form |
WIRE |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
200mA |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
625mW |
| Turn On Delay Time |
5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
40pF @ 25V |
| Rise Time |
7ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Continuous Drain Current (ID) |
200mA |
| Threshold Voltage |
2.4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.2A |
| Drain to Source Breakdown Voltage |
100V |
| Feedback Cap-Max (Crss) |
5 pF |
| Height |
4.01mm |
| Length |
4.77mm |
| Width |
2.41mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |