Showing 661–672 of 7598 results
Diodes Incorporated ZVN3310ASTOB
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Through Hole |
| Package / Case |
E-Line-3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
625mW Ta |
| Turn Off Delay Time |
6 ns |
| Reach Compliance Code |
unknown |
| Mount |
Through Hole |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
100V |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
200mA |
| Rds On (Max) @ Id, Vgs |
10 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| JESD-30 Code |
R-PSIP-W3 |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
625mW |
| Turn On Delay Time |
5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Input Capacitance (Ciss) (Max) @ Vds |
40pF @ 25V |
| Rise Time |
7ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
200mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.2A |
| Drain to Source Breakdown Voltage |
100V |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN3320A
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature (Max.) |
200°C |
| Packaging |
Bulk |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Peak Reflow Temperature (Cel) |
260 |
| Part Status |
Obsolete |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
200V |
| Max Power Dissipation |
625mW |
| Terminal Position |
SINGLE |
| Terminal Form |
WIRE |
| Package / Case |
SOT-23 |
| Mount |
Through Hole |
| Polarity/Channel Type |
N-CHANNEL |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| JESD-30 Code |
R-PSIP-W3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
330mW |
| Transistor Application |
SWITCHING |
| Drain to Source Voltage (Vdss) |
200V |
| Continuous Drain Current (ID) |
100mA |
| Gate to Source Voltage (Vgs) |
20V |
| Current Rating |
100mA |
| Drain Current-Max (Abs) (ID) |
0.1A |
| Drain to Source Breakdown Voltage |
200V |
| Input Capacitance |
45pF |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance |
25Ohm |
| Rds On Max |
25 Ω |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN3320FTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
330mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
6 ns |
| Published |
2001 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
25Ohm |
| Voltage - Rated DC |
200V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Contact Plating |
Tin |
| Factory Lead Time |
17 Weeks |
| Continuous Drain Current (ID) |
60mA |
| Threshold Voltage |
1V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
330mW |
| Turn On Delay Time |
5 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
25 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
45pF @ 25V |
| Rise Time |
7ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Current Rating |
60mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.06A |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
1A |
| Feedback Cap-Max (Crss) |
5 pF |
| Height |
1.02mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4206A
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Bulk |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
600mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Turn Off Delay Time |
12 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
17 Weeks |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
1Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
60V |
| Terminal Position |
BOTTOM |
| Terminal Form |
WIRE |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
600mA |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 25V |
| Rise Time |
12ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Continuous Drain Current (ID) |
600mA |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.6A |
| Drain to Source Breakdown Voltage |
60V |
| Feedback Cap-Max (Crss) |
20 pF |
| Height |
4.01mm |
| Length |
4.77mm |
| Width |
2.41mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4206AV
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Published |
2006 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
600mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Turn Off Delay Time |
12 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Bulk |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
1Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
60V |
| Terminal Position |
BOTTOM |
| Terminal Form |
WIRE |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 25V |
| Rise Time |
12ns |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
600mA |
| Current Rating |
600mA |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.6A |
| Drain to Source Breakdown Voltage |
60V |
| Feedback Cap-Max (Crss) |
20 pF |
| Height |
4.01mm |
| Length |
4.77mm |
| Width |
2.41mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4206AVSTZ
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Through Hole |
| Package / Case |
E-Line-3 |
| Current - Continuous Drain (Id) @ 25℃ |
600mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Power Dissipation (Max) |
700mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Box (TB) |
| Published |
2006 |
| Factory Lead Time |
17 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 25V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated ZVN4210A
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Bulk |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
450mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Turn Off Delay Time |
20 ns |
| Terminal Form |
WIRE |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
1997 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
1.5Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
100V |
| Terminal Position |
BOTTOM |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Rise Time |
8ns |
| Current Rating |
450mA |
| Pin Count |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 25V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Continuous Drain Current (ID) |
450mA |
| Threshold Voltage |
2.4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.45A |
| Drain to Source Breakdown Voltage |
100V |
| Height |
4.95mm |
| Length |
4.95mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4306ASTOB
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Reach Compliance Code |
unknown |
| Package / Case |
E-Line-3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
850mW Ta |
| Turn Off Delay Time |
30 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
60V |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rds On (Max) @ Id, Vgs |
330m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| JESD-30 Code |
R-PSIP-W3 |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
850mW |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Current Rating |
1.1A |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
| Rise Time |
25ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
1.1A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.45Ohm |
| Drain to Source Breakdown Voltage |
60V |
| RoHS Status |
RoHS Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4306AV
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
850mW Ta |
| Terminal Form |
WIRE |
| Factory Lead Time |
17 Weeks |
| Packaging |
Bulk |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
60V |
| Terminal Position |
BOTTOM |
| Turn Off Delay Time |
30 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
| Rise Time |
25ns |
| Pin Count |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.13W |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
330m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Current Rating |
1.1A |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
1.1A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Height |
4.01mm |
| Length |
4.77mm |
| Width |
2.41mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4306AVSTZ
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
E-Line-3 |
| Supplier Device Package |
E-Line (TO-92 compatible) |
| Weight |
453.59237mg |
| Current - Continuous Drain (Id) @ 25℃ |
1.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Power Dissipation (Max) |
850mW Ta |
| Current Rating |
1.1A |
| Mount |
Through Hole |
| Packaging |
Tape & Box (TB) |
| Published |
2012 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
60V |
| Turn Off Delay Time |
30 ns |
| Number of Channels |
1 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
330mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
| Rise Time |
25ns |
| Drain to Source Voltage (Vdss) |
60V |
| Element Configuration |
Single |
| Power Dissipation |
850mW |
| Continuous Drain Current (ID) |
1.1A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Input Capacitance |
350pF |
| Drain to Source Resistance |
450mOhm |
| Rds On Max |
330 mΩ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4310ASTOB
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Through Hole |
| Package / Case |
E-Line-3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
900mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
850mW Ta |
| Turn Off Delay Time |
30 ns |
| Reach Compliance Code |
unknown |
| Mount |
Through Hole |
| Published |
1997 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
100V |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
900mA |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| JESD-30 Code |
R-PSIP-W3 |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
850mW |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
| Rise Time |
25ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
900mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.9A |
| Drain-source On Resistance-Max |
0.65Ohm |
| Drain to Source Breakdown Voltage |
100V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4424A
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
260mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
750mW Ta |
| Turn Off Delay Time |
40 ns |
| Packaging |
Bulk |
| Published |
1997 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
5.5Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
240V |
| Terminal Form |
WIRE |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Vgs (Max) |
±40V |
| Fall Time (Typ) |
5 ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
750mW |
| Turn On Delay Time |
2.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 25V |
| Rise Time |
5ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Current Rating |
260mA |
| Continuous Drain Current (ID) |
260mA |
| Threshold Voltage |
1.3V |
| Gate to Source Voltage (Vgs) |
40V |
| Drain Current-Max (Abs) (ID) |
0.26A |
| Drain to Source Breakdown Voltage |
240V |
| Height |
4.01mm |
| Length |
4.77mm |
| Width |
2.41mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |