Showing 685–696 of 7598 results
Transistors - FETs/MOSFETs - Single
Diodes Incorporated ZVP4105ASTOB
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Reach Compliance Code |
unknown |
Package / Case |
E-Line-3 |
Weight |
453.59237mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
175mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
5V |
Number of Elements |
1 |
Power Dissipation (Max) |
625mW Ta |
Turn Off Delay Time |
18 ns |
Packaging |
Tape & Reel (TR) |
Published |
2012 |
Operating Temperature |
-55°C~150°C TJ |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN |
Voltage - Rated DC |
-50V |
Terminal Form |
WIRE |
Peak Reflow Temperature (Cel) |
260 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Rds On (Max) @ Id, Vgs |
10 Ω @ 100mA, 5V |
Vgs(th) (Max) @ Id |
2V @ 1mA |
JESD-30 Code |
R-PSIP-W3 |
Qualification Status |
Not Qualified |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
625mW |
Turn On Delay Time |
10 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Time@Peak Reflow Temperature-Max (s) |
40 |
Current Rating |
-175mA |
Input Capacitance (Ciss) (Max) @ Vds |
40pF @ 25V |
Rise Time |
10ns |
Drain to Source Voltage (Vdss) |
50V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
10 ns |
Continuous Drain Current (ID) |
175mA |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-50V |
RoHS Status |
RoHS Compliant |
Pin Count |
3 |
Lead Free |
Lead Free |
Diodes Incorporated ZVP4424A
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Published |
2006 |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins |
3 |
Weight |
453.59237mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
200mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
3.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
750mW Ta |
Turn Off Delay Time |
26 ns |
Operating Temperature |
-55°C~150°C TJ |
Reach Compliance Code |
not_compliant |
Packaging |
Bulk |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
9Ohm |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
-240V |
Terminal Position |
BOTTOM |
Terminal Form |
WIRE |
Peak Reflow Temperature (Cel) |
260 |
Mount |
Through Hole |
Factory Lead Time |
17 Weeks |
Rise Time |
8ns |
Time@Peak Reflow Temperature-Max (s) |
40 |
Qualification Status |
Not Qualified |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
750mW |
Turn On Delay Time |
8 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
9 Ω @ 200mA, 10V |
Vgs(th) (Max) @ Id |
2V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 25V |
Drain to Source Voltage (Vdss) |
240V |
Vgs (Max) |
±40V |
Current Rating |
-200mA |
Fall Time (Typ) |
8 ns |
Continuous Drain Current (ID) |
200mA |
Threshold Voltage |
-1.4V |
Gate to Source Voltage (Vgs) |
40V |
Drain Current-Max (Abs) (ID) |
0.2A |
Drain to Source Breakdown Voltage |
-240V |
Height |
4.01mm |
Length |
4.77mm |
Width |
2.41mm |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Pin Count |
3 |
Lead Free |
Lead Free |
Diodes Incorporated ZVP4424ASTZ
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Packaging |
Tape & Box (TB) |
Mounting Type |
Through Hole |
Package / Case |
E-Line-3 |
Number of Pins |
3 |
Weight |
453.59237mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
200mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
3.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
750mW Ta |
Turn Off Delay Time |
26 ns |
Peak Reflow Temperature (Cel) |
260 |
Operating Temperature |
-55°C~150°C TJ |
Published |
2001 |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
9Ohm |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
-240V |
Terminal Form |
WIRE |
Mount |
Through Hole |
Factory Lead Time |
17 Weeks |
Rise Time |
8ns |
Time@Peak Reflow Temperature-Max (s) |
40 |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
750mW |
Turn On Delay Time |
8 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
9 Ω @ 200mA, 10V |
Vgs(th) (Max) @ Id |
2V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 25V |
Drain to Source Voltage (Vdss) |
240V |
Vgs (Max) |
±40V |
Current Rating |
-200mA |
Fall Time (Typ) |
8 ns |
Continuous Drain Current (ID) |
200mA |
Gate to Source Voltage (Vgs) |
40V |
Drain Current-Max (Abs) (ID) |
0.2A |
Height |
4.01mm |
Length |
4.77mm |
Width |
2.41mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Pin Count |
3 |
Lead Free |
Lead Free |
Diodes Incorporated ZXM61N02FTC
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
7.994566mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
1.7A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.7V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
625mW Ta |
Turn Off Delay Time |
7.8 ns |
Peak Reflow Temperature (Cel) |
260 |
Operating Temperature |
-55°C~150°C TJ |
Published |
2006 |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
LOW THRESHOLD |
Voltage - Rated DC |
20V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Mount |
Surface Mount |
Factory Lead Time |
17 Weeks |
Gate Charge (Qg) (Max) @ Vgs |
3.4nC @ 4.5V |
Time@Peak Reflow Temperature-Max (s) |
40 |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
806mW |
Turn On Delay Time |
2.4 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
180m Ω @ 930mA, 4.5V |
Vgs(th) (Max) @ Id |
700mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
160pF @ 15V |
Rise Time |
4.2ns |
Vgs (Max) |
±12V |
Current Rating |
1.7A |
Fall Time (Typ) |
4.2 ns |
Continuous Drain Current (ID) |
1.7A |
Gate to Source Voltage (Vgs) |
12V |
Drain to Source Breakdown Voltage |
20V |
Height |
1.02mm |
Length |
3.04mm |
Width |
1.4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Pin Count |
3 |
Lead Free |
Lead Free |
Diodes Incorporated ZXM61N03FTA
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Packaging |
Tape & Reel (TR) |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
7.994566mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
1.4A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
625mW Ta |
Turn Off Delay Time |
5.8 ns |
Terminal Form |
GULL WING |
Factory Lead Time |
17 Weeks |
Published |
2006 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Resistance |
220mOhm |
Additional Feature |
LOW THRESHOLD |
Voltage - Rated DC |
30V |
Terminal Position |
DUAL |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
260 |
Rise Time |
2.5ns |
Vgs (Max) |
±20V |
Pin Count |
3 |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
806mW |
Turn On Delay Time |
1.9 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
220m Ω @ 910mA, 10V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
150pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
4.1nC @ 10V |
Current Rating |
1.2A |
Time@Peak Reflow Temperature-Max (s) |
40 |
Fall Time (Typ) |
2.5 ns |
Continuous Drain Current (ID) |
1.4A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
30V |
Dual Supply Voltage |
30V |
Nominal Vgs |
1 V |
Height |
1.02mm |
Length |
3.04mm |
Width |
1.4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Diodes Incorporated ZXM61P02FTA
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Termination |
SMD/SMT |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
7.994566mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Power Dissipation-Max |
625mW Ta |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
600mOhm |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
LOW THRESHOLD |
Voltage - Rated DC |
-20V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
-800mA |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
3 |
Number of Elements |
1 |
Number of Channels |
1 |
Mount |
Surface Mount |
Factory Lead Time |
17 Weeks |
Fall Time (Typ) |
6.7 ns |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
2.9 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
600m Ω @ 610mA, 4.5V |
Vgs(th) (Max) @ Id |
1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
150pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
900mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
3.5nC @ 4.5V |
Rise Time |
6.7ns |
Drain to Source Voltage (Vdss) |
20V |
Drive Voltage (Max Rds On,Min Rds On) |
2.7V 4.5V |
Vgs (Max) |
±12V |
Turn-Off Delay Time |
11.2 ns |
Continuous Drain Current (ID) |
900mA |
Element Configuration |
Single |
Gate to Source Voltage (Vgs) |
12V |
Drain Current-Max (Abs) (ID) |
0.9A |
Drain to Source Breakdown Voltage |
-20V |
Dual Supply Voltage |
-20V |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
-700 mV |
Height |
1.1mm |
Length |
3.04mm |
Width |
1.4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Power Dissipation |
625mW |
Lead Free |
Lead Free |
Diodes Incorporated ZXM61P03FTA
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Published |
2006 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
7.994566mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
1.1A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
625mW Ta |
Turn Off Delay Time |
8.9 ns |
Operating Temperature |
-55°C~150°C TJ |
Current Rating |
-1.1A |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Resistance |
350mOhm |
Additional Feature |
LOW THRESHOLD |
Voltage - Rated DC |
-30V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Contact Plating |
Tin |
Factory Lead Time |
17 Weeks |
Vgs (Max) |
±20V |
Pin Count |
3 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
625mW |
Turn On Delay Time |
1.9 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
350m Ω @ 600mA, 10V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
140pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
4.8nC @ 10V |
Rise Time |
2.9ns |
Drain to Source Voltage (Vdss) |
30V |
Fall Time (Typ) |
2.9 ns |
Continuous Drain Current (ID) |
1.1A |
Time@Peak Reflow Temperature-Max (s) |
40 |
Threshold Voltage |
1V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-30V |
Dual Supply Voltage |
-30V |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
-1 V |
Height |
1.1mm |
Length |
3.04mm |
Width |
1.4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Number of Channels |
1 |
Lead Free |
Lead Free |
Diodes Incorporated ZXM62N03E6TA
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Number of Terminations |
6 |
Package / Case |
SOT-23-6 |
Weight |
14.996898mg |
Current - Continuous Drain (Id) @ 25℃ |
3.2A Ta |
Number of Elements |
1 |
Turn Off Delay Time |
11.7 ns |
Packaging |
Digi-Reel® |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Peak Reflow Temperature (Cel) |
260 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Additional Feature |
LOW THRESHOLD |
Voltage - Rated DC |
30V |
Max Power Dissipation |
1.1W |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Transistor Application |
SWITCHING |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PDSO-G6 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Number of Channels |
1 |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.1W |
Turn On Delay Time |
2.9 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
110m Ω @ 2.2A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Current Rating |
3.2A |
Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
9.6nC @ 10V |
Rise Time |
5.6ns |
Fall Time (Typ) |
5.6 ns |
Continuous Drain Current (ID) |
3.2A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
30V |
RoHS Status |
ROHS3 Compliant |
Pin Count |
6 |
Lead Free |
Contains Lead |
Diodes Incorporated ZXM62P02E6TA
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Terminal Form |
GULL WING |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 |
Number of Pins |
6 |
Weight |
14.996898mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
2.3A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.7V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.1W Ta |
Turn Off Delay Time |
12 ns |
Packaging |
Tape & Reel (TR) |
Published |
2002 |
Operating Temperature |
-55°C~150°C TJ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Resistance |
200mOhm |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
LOW THRESHOLD |
Voltage - Rated DC |
-20V |
Terminal Position |
DUAL |
Mount |
Surface Mount |
Factory Lead Time |
17 Weeks |
Gate Charge (Qg) (Max) @ Vgs |
5.8nC @ 4.5V |
Rise Time |
15.4ns |
Pin Count |
6 |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.7W |
Turn On Delay Time |
4.1 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
200m Ω @ 1.6A, 4.5V |
Vgs(th) (Max) @ Id |
700mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
320pF @ 15V |
Current Rating |
-1.6A |
Peak Reflow Temperature (Cel) |
260 |
Drain to Source Voltage (Vdss) |
20V |
Vgs (Max) |
±12V |
Fall Time (Typ) |
15.4 ns |
Continuous Drain Current (ID) |
2.3A |
Gate to Source Voltage (Vgs) |
12V |
Height |
1.3mm |
Length |
3.1mm |
Width |
1.8mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Time@Peak Reflow Temperature-Max (s) |
40 |
Lead Free |
Lead Free |
Diodes Incorporated ZXM62P03GTA
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Weight |
7.994566mg |
Current - Continuous Drain (Id) @ 25℃ |
2.9A Ta 4A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
2W Ta |
Current Rating |
-4A |
Mount |
Surface Mount |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Voltage - Rated DC |
-30V |
Reach Compliance Code |
unknown |
Turn Off Delay Time |
13.9 ns |
Pin Count |
4 |
Rise Time |
6.4ns |
Drain to Source Voltage (Vdss) |
30V |
Turn On Delay Time |
2.8 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
150m Ω @ 1.6A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
330pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
10.2nC @ 10V |
Number of Channels |
1 |
Power Dissipation |
2W |
Vgs (Max) |
±20V |
Fall Time (Typ) |
10.3 ns |
Continuous Drain Current (ID) |
4A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-30V |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Diodes Incorporated ZXM64N02XTA
In stock
Manufacturer |
Diodes Incorporated |
---|---|
JESD-609 Code |
e3 |
Number of Pins |
8 |
Weight |
139.989945mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
5.4A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.7V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.1W Ta |
Turn Off Delay Time |
28.3 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Peak Reflow Temperature (Cel) |
260 |
Published |
2012 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Resistance |
40mOhm |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
LOW THRESHOLD |
Voltage - Rated DC |
20V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Gate Charge (Qg) (Max) @ Vgs |
16nC @ 4.5V |
Time@Peak Reflow Temperature-Max (s) |
40 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Number of Channels |
1 |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.8W |
Turn On Delay Time |
5.7 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
40m Ω @ 3.8A, 4.5V |
Vgs(th) (Max) @ Id |
700mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1100pF @ 15V |
Rise Time |
9.6ns |
Vgs (Max) |
±12V |
Current Rating |
5.4A |
Fall Time (Typ) |
9.6 ns |
Continuous Drain Current (ID) |
5.4A |
Gate to Source Voltage (Vgs) |
12V |
Drain to Source Breakdown Voltage |
20V |
Height |
950μm |
Length |
3.1mm |
Width |
3.1mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Pin Count |
8 |
Lead Free |
Lead Free |
Diodes Incorporated ZXM64N03XTC
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Pin Count |
8 |
Weight |
139.989945mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
5A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.1W Ta |
Turn Off Delay Time |
20.5 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
JESD-609 Code |
e3 |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
LOW THRESHOLD |
Voltage - Rated DC |
30V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
5.7A |
Time@Peak Reflow Temperature-Max (s) |
40 |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Rise Time |
4.5ns |
Vgs (Max) |
±20V |
Number of Channels |
1 |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.1W |
Turn On Delay Time |
4.2 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
45m Ω @ 3.7A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
950pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
Qualification Status |
Not Qualified |
JESD-30 Code |
S-PDSO-G8 |
Fall Time (Typ) |
4.5 ns |
Continuous Drain Current (ID) |
5A |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
5A |
Drain-source On Resistance-Max |
0.045Ohm |
Drain to Source Breakdown Voltage |
30V |
Height |
950μm |
Length |
3.1mm |
Width |
3.1mm |
RoHS Status |
RoHS Compliant |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Lead Free |
Lead Free |