Showing 697–708 of 7598 results
Diodes Incorporated ZXM64P035L3
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Pin Count |
3 |
| Package / Case |
TO-220-3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.3A Ta 12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.5W Ta 20W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Packaging |
Bulk |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
-35V |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
-12A |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Drain to Source Voltage (Vdss) |
35V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
20W |
| Turn On Delay Time |
4.4 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
75m Ω @ 2.4A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
825pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
46nC @ 10V |
| Rise Time |
6.2ns |
| Number of Channels |
1 |
| JESD-30 Code |
R-PSFM-T3 |
| Fall Time (Typ) |
29.2 ns |
| Continuous Drain Current (ID) |
12A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Recovery Time |
30.2 ns |
| Height |
4.82mm |
| Length |
16.51mm |
| Width |
10.66mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Diodes Incorporated ZXM64P03XTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Published |
2006 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
8 |
| Weight |
139.989945mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.1W Ta |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Factory Lead Time |
10 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
75mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
-30V |
| Terminal Position |
DUAL |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
260 |
| Gate Charge (Qg) (Max) @ Vgs |
46nC @ 10V |
| Rise Time |
6.2ns |
| Pin Count |
8 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.8W |
| Turn On Delay Time |
4.4 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
75m Ω @ 2.4A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
825pF @ 25V |
| Current Rating |
-3.8A |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6.2 ns |
| Continuous Drain Current (ID) |
3.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Height |
950μm |
| Length |
3.1mm |
| Width |
3.1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZXM66N02N8TA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Current - Continuous Drain (Id) @ 25℃ |
9A Ta |
| Number of Elements |
1 |
| Packaging |
Digi-Reel® |
| JESD-609 Code |
e3 |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
20V |
| Max Power Dissipation |
2.5W |
| Part Status |
Obsolete |
| Terminal Form |
GULL WING |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Current Rating |
9.9A |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-G8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
unknown |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15m Ω @ 4.1A, 4.5V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Continuous Drain Current (ID) |
9A |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain-source On Resistance-Max |
0.015Ohm |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Diodes Incorporated ZXM66P03N8TA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
73.992255mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.25A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.56W Ta |
| Turn Off Delay Time |
94.6 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
10 Weeks |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
25mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
-30V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
-7.9A |
| Rise Time |
16.3ns |
| Drain to Source Voltage (Vdss) |
30V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
7.6 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 5.6A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1979pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 5V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
8 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
39.6 ns |
| Continuous Drain Current (ID) |
7.9A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
6.25A |
| Drain to Source Breakdown Voltage |
-30V |
| Height |
1.5mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN10A08E6TA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 |
| Number of Pins |
6 |
| Weight |
14.996898mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.1W Ta |
| Turn Off Delay Time |
8 ns |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2009 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Resistance |
250mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Voltage - Rated DC |
100V |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
7.7nC @ 10V |
| Current Rating |
1.5A |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.7W |
| Turn On Delay Time |
3.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
250m Ω @ 3.2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
405pF @ 50V |
| Rise Time |
2.2ns |
| Vgs (Max) |
±20V |
| Terminal Form |
GULL WING |
| Fall Time (Typ) |
2.2 ns |
| Continuous Drain Current (ID) |
3.5A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Height |
1.3mm |
| Length |
3.1mm |
| Width |
1.8mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
6 |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN10A11KTC
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Published |
2010 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.11W Ta |
| Turn Off Delay Time |
7.4 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Factory Lead Time |
17 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
350mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
8.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
2.7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
350m Ω @ 2.6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
274pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
5.4nC @ 10V |
| Rise Time |
1.7ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Fall Time (Typ) |
3.5 ns |
| Continuous Drain Current (ID) |
3.5A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
2.4A |
| Pulsed Drain Current-Max (IDM) |
9.9A |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN10A25GTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.9A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Turn Off Delay Time |
18 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Packaging |
Tape & Reel (TR) |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
125mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
FAST SWITCHING |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Rise Time |
3.7ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.9W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4.9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
125m Ω @ 2.9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
859pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| JESD-30 Code |
R-PDSO-G4 |
| Pin Count |
4 |
| Fall Time (Typ) |
9.4 ns |
| Continuous Drain Current (ID) |
4A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
2.9A |
| Drain to Source Breakdown Voltage |
100V |
| Height |
1.65mm |
| Length |
6.7mm |
| Width |
3.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN2A01E6TA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 |
| Number of Pins |
6 |
| Weight |
14.996898mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.1W Ta |
| Turn Off Delay Time |
7.47 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Resistance |
120mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
20V |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
3nC @ 4.5V |
| Rise Time |
5.21ns |
| Pin Count |
6 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.7W |
| Turn On Delay Time |
2.49 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
120m Ω @ 4A, 4.5V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
303pF @ 15V |
| Current Rating |
2.5A |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
5.21 ns |
| Continuous Drain Current (ID) |
3.1A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
20V |
| Height |
1.3mm |
| Length |
3.1mm |
| Width |
1.8mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN2A01FTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.9A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
625mW Ta |
| Turn Off Delay Time |
7.47 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2002 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
120mOhm |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
20V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Contact Plating |
Tin |
| Factory Lead Time |
17 Weeks |
| Rise Time |
5.21ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
625mW |
| Turn On Delay Time |
2.49 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
120m Ω @ 4A, 4.5V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
303pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
3nC @ 4.5V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
5.21 ns |
| Current Rating |
2.09A |
| Continuous Drain Current (ID) |
2.2A |
| Threshold Voltage |
700mV |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
20V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.1mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN2A02N8TA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
73.992255mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.56W Ta |
| Turn Off Delay Time |
33.3 ns |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
20mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
20V |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1900pF @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
8 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
7.9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
20m Ω @ 11A, 4.5V |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
10.2A |
| Gate Charge (Qg) (Max) @ Vgs |
18.9nC @ 4.5V |
| Rise Time |
10ns |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
10.2A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
20V |
| Pulsed Drain Current-Max (IDM) |
50A |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN2AM832TA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Current Rating |
3A |
| Weight |
299.994654mg |
| Number of Elements |
2 |
| Turn Off Delay Time |
1.55 ns |
| Packaging |
Cut Tape (CT) |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
120mOhm |
| Number of Terminations |
8 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
20V |
| Max Power Dissipation |
1.7W |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
260 |
| Number of Pins |
8 |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
2.9A |
| Gate to Source Voltage (Vgs) |
12V |
| Number of Channels |
2 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.5W |
| Turn On Delay Time |
2.31 ns |
| Transistor Application |
SWITCHING |
| Rise Time |
2.6ns |
| Drain to Source Voltage (Vdss) |
20V |
| Polarity/Channel Type |
N-CHANNEL |
| Fall Time (Typ) |
1.31 ns |
| Pin Count |
8 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
299pF |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance |
120mOhm |
| Rds On Max |
120 mΩ |
| Height |
1mm |
| Length |
3mm |
| Width |
2mm |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN2B01FTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
625mW Ta |
| Turn Off Delay Time |
17.8 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
100mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Rise Time |
3.6ns |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
806mW |
| Turn On Delay Time |
2.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 2.4A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
370pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
4.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Fall Time (Typ) |
3.6 ns |
| Continuous Drain Current (ID) |
2.4A |
| Gate to Source Voltage (Vgs) |
8V |
| DS Breakdown Voltage-Min |
20V |
| Height |
1.02mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |