Transistors - FETs/MOSFETs - Single

Diodes Incorporated ZXMN6A25G

In stock

SKU: ZXMN6A25G-11
Manufacturer

Diodes Incorporated

Terminal Form

GULL WING

Package / Case

TO-261-4, TO-261AA

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

4.8A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2W Ta

Operating Temperature

-55°C~150°C TJ

Published

2012

JESD-609 Code

e3

Packaging

Tape & Reel (TR)

Pbfree Code

no

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

4

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

60V

Terminal Position

DUAL

Mounting Type

Surface Mount

Mount

Surface Mount

Rds On (Max) @ Id, Vgs

50m Ω @ 3.6A, 10V

Vgs(th) (Max) @ Id

1V @ 250μA

Pin Count

4

JESD-30 Code

R-PDSO-G4

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Current Rating

6.7A

Peak Reflow Temperature (Cel)

260

Input Capacitance (Ciss) (Max) @ Vds

1063pF @ 30V

Gate Charge (Qg) (Max) @ Vgs

20.4nC @ 10V

Vgs (Max)

±20V

Continuous Drain Current (ID)

4.8A

Drain-source On Resistance-Max

0.05Ohm

Pulsed Drain Current-Max (IDM)

28.5A

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Time@Peak Reflow Temperature-Max (s)

40

Lead Free

Lead Free

Diodes Incorporated ZXMN7A11GTA

In stock

SKU: ZXMN7A11GTA-11
Manufacturer

Diodes Incorporated

Published

2006

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Weight

7.994566mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

2.7A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2W Ta

Turn Off Delay Time

11.5 ns

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

260

Factory Lead Time

17 Weeks

JESD-609 Code

e3

Pbfree Code

no

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

4

ECCN Code

EAR99

Resistance

130mOhm

Terminal Finish

Matte Tin (Sn)

Additional Feature

LOW THRESHOLD; FAST SWITCHING

Voltage - Rated DC

70V

Terminal Position

DUAL

Terminal Form

GULL WING

Packaging

Tape & Reel (TR)

Current Rating

3.8A

Input Capacitance (Ciss) (Max) @ Vds

298pF @ 40V

Gate Charge (Qg) (Max) @ Vgs

7.4nC @ 10V

JESD-30 Code

R-PDSO-G4

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

3.9W

Case Connection

DRAIN

Turn On Delay Time

1.9 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

130m Ω @ 4.4A, 10V

Vgs(th) (Max) @ Id

1V @ 250μA

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

4

Rise Time

2ns

Vgs (Max)

±20V

Fall Time (Typ)

5.8 ns

Continuous Drain Current (ID)

3.8A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

70V

Height

1.65mm

Length

6.7mm

Width

3.7mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Diodes Incorporated ZXMP10A13FTA

In stock

SKU: ZXMP10A13FTA-11
Manufacturer

Diodes Incorporated

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Weight

7.994566mg

Transistor Element Material

SILICON

Manufacturer Package Identifier

ZXMP10A13FTA

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2006

JESD-609 Code

e3

Pbfree Code

yes

Number of Channels

1

Factory Lead Time

17 Weeks

Number of Terminations

3

ECCN Code

EAR99

Resistance

1Ohm

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

-100V

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

-500mA

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

3

Number of Elements

1

Part Status

Active

Power Dissipation-Max

625mW Ta

Vgs (Max)

±20V

Fall Time (Typ)

3.3 ns

Power Dissipation

625mW

Turn On Delay Time

1.6 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

1 Ω @ 600mA, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

141pF @ 50V

Current - Continuous Drain (Id) @ 25°C

600mA Ta

Gate Charge (Qg) (Max) @ Vgs

3.5nC @ 10V

Rise Time

2.1ns

Drain to Source Voltage (Vdss)

100V

Drive Voltage (Max Rds On,Min Rds On)

6V 10V

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Turn-Off Delay Time

5.9 ns

Continuous Drain Current (ID)

-700mA

Threshold Voltage

-4V

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

0.7A

Drain to Source Breakdown Voltage

-100V

Height

1.02mm

Length

3.04mm

Width

1.4mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Diodes Incorporated ZXMP10A16KTC

In stock

SKU: ZXMP10A16KTC-11
Manufacturer

Diodes Incorporated

Operating Temperature

-55°C~150°C TJ

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

3.949996g

Transistor Element Material

SILICON

Manufacturer Package Identifier

TO252 (DPAK)

Current - Continuous Drain (Id) @ 25℃

3A Ta

Drive Voltage (Max Rds On, Min Rds On)

6V 10V

Number of Elements

1

Power Dissipation (Max)

2.15W Ta

Peak Reflow Temperature (Cel)

260

Factory Lead Time

17 Weeks

Packaging

Tape & Reel (TR)

Published

2006

JESD-609 Code

e3

Pbfree Code

no

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

4

ECCN Code

EAR99

Resistance

235mOhm

Additional Feature

FAST SWITCHING, LOW THRESHOLD

Terminal Position

DUAL

Terminal Form

GULL WING

Turn Off Delay Time

20 ns

Time@Peak Reflow Temperature-Max (s)

40

Rise Time

5.2ns

Drain to Source Voltage (Vdss)

100V

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

4.24W

Turn On Delay Time

4.3 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

235m Ω @ 2.1A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

717pF @ 50V

Gate Charge (Qg) (Max) @ Vgs

16.5nC @ 10V

Pin Count

4

JESD-30 Code

R-PDSO-G4

Vgs (Max)

±20V

Fall Time (Typ)

12.1 ns

Continuous Drain Current (ID)

4.6A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

-100V

Max Junction Temperature (Tj)

150°C

Height

2.52mm

Length

6.73mm

Width

6.22mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Diodes Incorporated ZXMP10A18GTA

In stock

SKU: ZXMP10A18GTA-11
Manufacturer

Diodes Incorporated

Part Status

Active

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Number of Pins

4

Weight

7.994566mg

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2006

JESD-609 Code

e3

Voltage

100V

Factory Lead Time

17 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

4

ECCN Code

EAR99

Resistance

150mOhm

Additional Feature

HIGH RELIABILITY

Voltage - Rated DC

-100V

Terminal Position

DUAL

Terminal Form

GULL WING

Current Rating

-3.7A

Pin Count

4

Number of Elements

1

Number of Channels

1

Pbfree Code

no

Power Dissipation-Max

2W Ta

Rise Time

6.8ns

Drive Voltage (Max Rds On,Min Rds On)

6V 10V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

3.9W

Case Connection

DRAIN

Turn On Delay Time

4.6 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

150m Ω @ 2.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1055pF @ 50V

Current - Continuous Drain (Id) @ 25°C

2.6A Ta

Gate Charge (Qg) (Max) @ Vgs

26.9nC @ 10V

Element Configuration

Single

Current

37A

Vgs (Max)

±20V

Fall Time (Typ)

17.9 ns

Turn-Off Delay Time

33.9 ns

Continuous Drain Current (ID)

3.7A

Threshold Voltage

-2V

Gate to Source Voltage (Vgs)

20V

Height

1.65mm

Length

6.7mm

Width

3.7mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Diodes Incorporated ZXMP2120G4TA

In stock

SKU: ZXMP2120G4TA-11
Manufacturer

Diodes Incorporated

Published

2006

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Number of Pins

4

Weight

7.994566mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

200mA Ta

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

2W Ta

Turn Off Delay Time

12 ns

Operating Temperature

-55°C~150°C TJ

Current Rating

-200mA

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Pbfree Code

no

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

4

ECCN Code

EAR99

Resistance

25Ohm

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

-200V

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Mount

Surface Mount

Factory Lead Time

10 Weeks

Drain to Source Voltage (Vdss)

200V

Pin Count

4

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2W

Case Connection

DRAIN

Turn On Delay Time

7 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

25 Ω @ 150mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 25V

Rise Time

15ns

Vgs (Max)

±20V

Fall Time (Typ)

15 ns

Time@Peak Reflow Temperature-Max (s)

40

Continuous Drain Current (ID)

200mA

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

0.2A

Drain to Source Breakdown Voltage

-200V

Feedback Cap-Max (Crss)

7 pF

Height

1.65mm

Length

6.7mm

Width

3.7mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Number of Channels

1

Lead Free

Lead Free

Diodes Incorporated ZXMP3F35N8TA

In stock

SKU: ZXMP3F35N8TA-11
Manufacturer

Diodes Incorporated

Time@Peak Reflow Temperature-Max (s)

40

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

506.605978mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

9.3A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.56W Ta

Turn Off Delay Time

103 ns

Packaging

Tape & Reel (TR)

Published

2008

Operating Temperature

-55°C~150°C TJ

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Resistance

12mOhm

Terminal Finish

Matte Tin (Sn)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Mounting Type

Surface Mount

Mount

Surface Mount

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.8W

Turn On Delay Time

5.4 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

12m Ω @ 12A, 10V

Vgs(th) (Max) @ Id

2.6V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

4600pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

77.1nC @ 10V

Rise Time

9.9ns

Number of Channels

2

Pin Count

8

Fall Time (Typ)

55.6 ns

Continuous Drain Current (ID)

12.3A

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

17.1A

Drain to Source Breakdown Voltage

-30V

Height

1.5mm

Length

5mm

Width

4mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Element Configuration

Dual

Lead Free

Lead Free

Diodes Incorporated ZXMP3F36N8TA

In stock

SKU: ZXMP3F36N8TA-11
Manufacturer

Diodes Incorporated

Operating Temperature

-55°C~150°C TJ

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

506.605978mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

7.2A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.56W Ta

Peak Reflow Temperature (Cel)

260

Mount

Surface Mount

Packaging

Tape & Reel (TR)

Published

2008

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Terminal Form

GULL WING

Turn Off Delay Time

75 ns

Time@Peak Reflow Temperature-Max (s)

40

Gate Charge (Qg) (Max) @ Vgs

43.9nC @ 15V

Rise Time

5ns

Element Configuration

Dual

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.8W

Turn On Delay Time

3.1 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

20m Ω @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2265pF @ 15V

Pin Count

8

Number of Channels

2

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Fall Time (Typ)

40 ns

Continuous Drain Current (ID)

9.6A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

-30V

Height

1.5mm

Length

5mm

Width

4mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Diodes Incorporated ZXMP4A16KTC

In stock

SKU: ZXMP4A16KTC-11
Manufacturer

Diodes Incorporated

Time@Peak Reflow Temperature-Max (s)

40

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

6.6A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2.15W Ta

Turn Off Delay Time

36.8 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Pbfree Code

no

Published

2006

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

60mOhm

Terminal Finish

Matte Tin (Sn)

Additional Feature

LOW THRESHOLD; FAST SWITCHING

Voltage - Rated DC

-40V

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

-9.9A

Mount

Surface Mount

Factory Lead Time

17 Weeks

Rise Time

6ns

Drain to Source Voltage (Vdss)

40V

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

9.5W

Case Connection

DRAIN

Turn On Delay Time

4 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

60m Ω @ 3.8A, 10V

Vgs(th) (Max) @ Id

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

965pF @ 20V

Gate Charge (Qg) (Max) @ Vgs

29.6nC @ 10V

JESD-30 Code

R-PSSO-G2

Pin Count

3

Vgs (Max)

±20V

Fall Time (Typ)

17.1 ns

Continuous Drain Current (ID)

9.9A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

-40V

Height

2.39mm

Length

6.73mm

Width

6.22mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Number of Channels

1

Lead Free

Lead Free

Diodes Incorporated ZXMP6A16KTC

In stock

SKU: ZXMP6A16KTC-11
Manufacturer

Diodes Incorporated

Number of Terminations

2

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

3.949996g

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2002

JESD-609 Code

e3

Pbfree Code

no

Part Status

Active

Operating Mode

ENHANCEMENT MODE

Factory Lead Time

17 Weeks

ECCN Code

EAR99

Resistance

85mOhm

Terminal Finish

Matte Tin (Sn)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

3

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Number of Channels

1

Power Dissipation-Max

2.11W Ta

Element Configuration

Single

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Power Dissipation

9.76W

Fall Time (Typ)

10 ns

Turn-Off Delay Time

35 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

85m Ω @ 2.9A, 10V

Vgs(th) (Max) @ Id

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1021pF @ 30V

Current - Continuous Drain (Id) @ 25°C

5.4A Ta

Gate Charge (Qg) (Max) @ Vgs

24.2nC @ 10V

Rise Time

4.1ns

Drain to Source Voltage (Vdss)

60V

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±20V

Case Connection

DRAIN

Turn On Delay Time

3.5 ns

Continuous Drain Current (ID)

8.2A

Threshold Voltage

-1V

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

5.4A

Drain to Source Breakdown Voltage

-60V

Pulsed Drain Current-Max (IDM)

27.2A

Height

2.39mm

Length

6.73mm

Width

6.22mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Diodes Incorporated ZXMP6A17E6TA

In stock

SKU: ZXMP6A17E6TA-11
Manufacturer

Diodes Incorporated

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SOT-23-6

Number of Pins

6

Weight

14.996898mg

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2012

JESD-609 Code

e3

Pbfree Code

yes

Power Dissipation-Max

1.1W Ta

Factory Lead Time

17 Weeks

Number of Terminations

6

ECCN Code

EAR99

Resistance

125mOhm

Voltage - Rated DC

-60V

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

-3A

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

6

Number of Elements

1

Number of Channels

1

Part Status

Active

Element Configuration

Single

Fall Time (Typ)

3.4 ns

Turn-Off Delay Time

26.2 ns

Turn On Delay Time

2.6 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

125m Ω @ 2.3A, 10V

Vgs(th) (Max) @ Id

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

637pF @ 30V

Current - Continuous Drain (Id) @ 25°C

2.3A Ta

Gate Charge (Qg) (Max) @ Vgs

17.7nC @ 10V

Rise Time

3.4ns

Drain to Source Voltage (Vdss)

60V

Drive Voltage (Max Rds On,Min Rds On)

4.5V 10V

Vgs (Max)

±20V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.1W

Continuous Drain Current (ID)

-2.3A

Threshold Voltage

-3V

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

3A

Drain to Source Breakdown Voltage

-60V

Max Junction Temperature (Tj)

150°C

Height

1.4mm

Length

3.1mm

Width

1.8mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Diodes Incorporated ZXMP6A17KTC

In stock

SKU: ZXMP6A17KTC-11
Manufacturer

Diodes Incorporated

JESD-30 Code

R-PSSO-G2

Mounting Type

Surface Mount

Number of Pins

3

Weight

3.949996g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

4.4A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2.11W Ta

Turn Off Delay Time

26.2 ns

Operating Temperature

-55°C~150°C TJ

Published

2009

JESD-609 Code

e3

Packaging

Cut Tape (CT)

Pbfree Code

no

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

125mOhm

Terminal Finish

Matte Tin (Sn)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

4

Mount

Surface Mount

Factory Lead Time

17 Weeks

Vgs (Max)

±20V

Fall Time (Typ)

11.3 ns

Power Dissipation

9.25W

Case Connection

DRAIN

Turn On Delay Time

2.6 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

125m Ω @ 2.3A, 10V

Vgs(th) (Max) @ Id

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

637pF @ 30V

Gate Charge (Qg) (Max) @ Vgs

17.7nC @ 10V

Rise Time

3.4ns

Drain to Source Voltage (Vdss)

60V

Element Configuration

Single

Number of Channels

1

Continuous Drain Current (ID)

6.6A

JEDEC-95 Code

TO-252AA

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

4.4A

Drain to Source Breakdown Voltage

-60V

Height

2.39mm

Length

6.73mm

Width

6.22mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Lead Free

Lead Free