Showing 721–732 of 7598 results
Transistors - FETs/MOSFETs - Single
Diodes Incorporated ZXMN6A25G
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Terminal Form |
GULL WING |
Package / Case |
TO-261-4, TO-261AA |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
4.8A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2W Ta |
Operating Temperature |
-55°C~150°C TJ |
Published |
2012 |
JESD-609 Code |
e3 |
Packaging |
Tape & Reel (TR) |
Pbfree Code |
no |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
60V |
Terminal Position |
DUAL |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Rds On (Max) @ Id, Vgs |
50m Ω @ 3.6A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Pin Count |
4 |
JESD-30 Code |
R-PDSO-G4 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Current Rating |
6.7A |
Peak Reflow Temperature (Cel) |
260 |
Input Capacitance (Ciss) (Max) @ Vds |
1063pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs |
20.4nC @ 10V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
4.8A |
Drain-source On Resistance-Max |
0.05Ohm |
Pulsed Drain Current-Max (IDM) |
28.5A |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Time@Peak Reflow Temperature-Max (s) |
40 |
Lead Free |
Lead Free |
Diodes Incorporated ZXMN7A11GTA
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Published |
2006 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Weight |
7.994566mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
2.7A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2W Ta |
Turn Off Delay Time |
11.5 ns |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
260 |
Factory Lead Time |
17 Weeks |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Resistance |
130mOhm |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
LOW THRESHOLD; FAST SWITCHING |
Voltage - Rated DC |
70V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Packaging |
Tape & Reel (TR) |
Current Rating |
3.8A |
Input Capacitance (Ciss) (Max) @ Vds |
298pF @ 40V |
Gate Charge (Qg) (Max) @ Vgs |
7.4nC @ 10V |
JESD-30 Code |
R-PDSO-G4 |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
3.9W |
Case Connection |
DRAIN |
Turn On Delay Time |
1.9 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
130m Ω @ 4.4A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
4 |
Rise Time |
2ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
5.8 ns |
Continuous Drain Current (ID) |
3.8A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
70V |
Height |
1.65mm |
Length |
6.7mm |
Width |
3.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Diodes Incorporated ZXMP10A13FTA
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
7.994566mg |
Transistor Element Material |
SILICON |
Manufacturer Package Identifier |
ZXMP10A13FTA |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Number of Channels |
1 |
Factory Lead Time |
17 Weeks |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
1Ohm |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
-100V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
-500mA |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
3 |
Number of Elements |
1 |
Part Status |
Active |
Power Dissipation-Max |
625mW Ta |
Vgs (Max) |
±20V |
Fall Time (Typ) |
3.3 ns |
Power Dissipation |
625mW |
Turn On Delay Time |
1.6 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
1 Ω @ 600mA, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
141pF @ 50V |
Current - Continuous Drain (Id) @ 25°C |
600mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
3.5nC @ 10V |
Rise Time |
2.1ns |
Drain to Source Voltage (Vdss) |
100V |
Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Turn-Off Delay Time |
5.9 ns |
Continuous Drain Current (ID) |
-700mA |
Threshold Voltage |
-4V |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
0.7A |
Drain to Source Breakdown Voltage |
-100V |
Height |
1.02mm |
Length |
3.04mm |
Width |
1.4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Diodes Incorporated ZXMP10A16KTC
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
3.949996g |
Transistor Element Material |
SILICON |
Manufacturer Package Identifier |
TO252 (DPAK) |
Current - Continuous Drain (Id) @ 25℃ |
3A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.15W Ta |
Peak Reflow Temperature (Cel) |
260 |
Factory Lead Time |
17 Weeks |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Resistance |
235mOhm |
Additional Feature |
FAST SWITCHING, LOW THRESHOLD |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Turn Off Delay Time |
20 ns |
Time@Peak Reflow Temperature-Max (s) |
40 |
Rise Time |
5.2ns |
Drain to Source Voltage (Vdss) |
100V |
Number of Channels |
1 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
4.24W |
Turn On Delay Time |
4.3 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
235m Ω @ 2.1A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
717pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs |
16.5nC @ 10V |
Pin Count |
4 |
JESD-30 Code |
R-PDSO-G4 |
Vgs (Max) |
±20V |
Fall Time (Typ) |
12.1 ns |
Continuous Drain Current (ID) |
4.6A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-100V |
Max Junction Temperature (Tj) |
150°C |
Height |
2.52mm |
Length |
6.73mm |
Width |
6.22mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Diodes Incorporated ZXMP10A18GTA
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Part Status |
Active |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Number of Pins |
4 |
Weight |
7.994566mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
JESD-609 Code |
e3 |
Voltage |
100V |
Factory Lead Time |
17 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Resistance |
150mOhm |
Additional Feature |
HIGH RELIABILITY |
Voltage - Rated DC |
-100V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
-3.7A |
Pin Count |
4 |
Number of Elements |
1 |
Number of Channels |
1 |
Pbfree Code |
no |
Power Dissipation-Max |
2W Ta |
Rise Time |
6.8ns |
Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
3.9W |
Case Connection |
DRAIN |
Turn On Delay Time |
4.6 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
150m Ω @ 2.8A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1055pF @ 50V |
Current - Continuous Drain (Id) @ 25°C |
2.6A Ta |
Gate Charge (Qg) (Max) @ Vgs |
26.9nC @ 10V |
Element Configuration |
Single |
Current |
37A |
Vgs (Max) |
±20V |
Fall Time (Typ) |
17.9 ns |
Turn-Off Delay Time |
33.9 ns |
Continuous Drain Current (ID) |
3.7A |
Threshold Voltage |
-2V |
Gate to Source Voltage (Vgs) |
20V |
Height |
1.65mm |
Length |
6.7mm |
Width |
3.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Diodes Incorporated ZXMP2120G4TA
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Published |
2006 |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Number of Pins |
4 |
Weight |
7.994566mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
200mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2W Ta |
Turn Off Delay Time |
12 ns |
Operating Temperature |
-55°C~150°C TJ |
Current Rating |
-200mA |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Resistance |
25Ohm |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
-200V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Mount |
Surface Mount |
Factory Lead Time |
10 Weeks |
Drain to Source Voltage (Vdss) |
200V |
Pin Count |
4 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2W |
Case Connection |
DRAIN |
Turn On Delay Time |
7 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
25 Ω @ 150mA, 10V |
Vgs(th) (Max) @ Id |
3.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 25V |
Rise Time |
15ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
15 ns |
Time@Peak Reflow Temperature-Max (s) |
40 |
Continuous Drain Current (ID) |
200mA |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
0.2A |
Drain to Source Breakdown Voltage |
-200V |
Feedback Cap-Max (Crss) |
7 pF |
Height |
1.65mm |
Length |
6.7mm |
Width |
3.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Number of Channels |
1 |
Lead Free |
Lead Free |
Diodes Incorporated ZXMP3F35N8TA
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Time@Peak Reflow Temperature-Max (s) |
40 |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
506.605978mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
9.3A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.56W Ta |
Turn Off Delay Time |
103 ns |
Packaging |
Tape & Reel (TR) |
Published |
2008 |
Operating Temperature |
-55°C~150°C TJ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Resistance |
12mOhm |
Terminal Finish |
Matte Tin (Sn) |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2.8W |
Turn On Delay Time |
5.4 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
12m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id |
2.6V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
4600pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
77.1nC @ 10V |
Rise Time |
9.9ns |
Number of Channels |
2 |
Pin Count |
8 |
Fall Time (Typ) |
55.6 ns |
Continuous Drain Current (ID) |
12.3A |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
17.1A |
Drain to Source Breakdown Voltage |
-30V |
Height |
1.5mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Dual |
Lead Free |
Lead Free |
Diodes Incorporated ZXMP3F36N8TA
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
506.605978mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
7.2A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
1.56W Ta |
Peak Reflow Temperature (Cel) |
260 |
Mount |
Surface Mount |
Packaging |
Tape & Reel (TR) |
Published |
2008 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Terminal Form |
GULL WING |
Turn Off Delay Time |
75 ns |
Time@Peak Reflow Temperature-Max (s) |
40 |
Gate Charge (Qg) (Max) @ Vgs |
43.9nC @ 15V |
Rise Time |
5ns |
Element Configuration |
Dual |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2.8W |
Turn On Delay Time |
3.1 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
20m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2265pF @ 15V |
Pin Count |
8 |
Number of Channels |
2 |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
40 ns |
Continuous Drain Current (ID) |
9.6A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-30V |
Height |
1.5mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Diodes Incorporated ZXMP4A16KTC
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Time@Peak Reflow Temperature-Max (s) |
40 |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
6.6A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.15W Ta |
Turn Off Delay Time |
36.8 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Published |
2006 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Resistance |
60mOhm |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
LOW THRESHOLD; FAST SWITCHING |
Voltage - Rated DC |
-40V |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
-9.9A |
Mount |
Surface Mount |
Factory Lead Time |
17 Weeks |
Rise Time |
6ns |
Drain to Source Voltage (Vdss) |
40V |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
9.5W |
Case Connection |
DRAIN |
Turn On Delay Time |
4 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
60m Ω @ 3.8A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
965pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs |
29.6nC @ 10V |
JESD-30 Code |
R-PSSO-G2 |
Pin Count |
3 |
Vgs (Max) |
±20V |
Fall Time (Typ) |
17.1 ns |
Continuous Drain Current (ID) |
9.9A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-40V |
Height |
2.39mm |
Length |
6.73mm |
Width |
6.22mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Number of Channels |
1 |
Lead Free |
Lead Free |
Diodes Incorporated ZXMP6A16KTC
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Number of Terminations |
2 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
3.949996g |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2002 |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Part Status |
Active |
Operating Mode |
ENHANCEMENT MODE |
Factory Lead Time |
17 Weeks |
ECCN Code |
EAR99 |
Resistance |
85mOhm |
Terminal Finish |
Matte Tin (Sn) |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
3 |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
2.11W Ta |
Element Configuration |
Single |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Power Dissipation |
9.76W |
Fall Time (Typ) |
10 ns |
Turn-Off Delay Time |
35 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
85m Ω @ 2.9A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1021pF @ 30V |
Current - Continuous Drain (Id) @ 25°C |
5.4A Ta |
Gate Charge (Qg) (Max) @ Vgs |
24.2nC @ 10V |
Rise Time |
4.1ns |
Drain to Source Voltage (Vdss) |
60V |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Case Connection |
DRAIN |
Turn On Delay Time |
3.5 ns |
Continuous Drain Current (ID) |
8.2A |
Threshold Voltage |
-1V |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
5.4A |
Drain to Source Breakdown Voltage |
-60V |
Pulsed Drain Current-Max (IDM) |
27.2A |
Height |
2.39mm |
Length |
6.73mm |
Width |
6.22mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Diodes Incorporated ZXMP6A17E6TA
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 |
Number of Pins |
6 |
Weight |
14.996898mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2012 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Power Dissipation-Max |
1.1W Ta |
Factory Lead Time |
17 Weeks |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Resistance |
125mOhm |
Voltage - Rated DC |
-60V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
-3A |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
6 |
Number of Elements |
1 |
Number of Channels |
1 |
Part Status |
Active |
Element Configuration |
Single |
Fall Time (Typ) |
3.4 ns |
Turn-Off Delay Time |
26.2 ns |
Turn On Delay Time |
2.6 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
125m Ω @ 2.3A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
637pF @ 30V |
Current - Continuous Drain (Id) @ 25°C |
2.3A Ta |
Gate Charge (Qg) (Max) @ Vgs |
17.7nC @ 10V |
Rise Time |
3.4ns |
Drain to Source Voltage (Vdss) |
60V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
1.1W |
Continuous Drain Current (ID) |
-2.3A |
Threshold Voltage |
-3V |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
3A |
Drain to Source Breakdown Voltage |
-60V |
Max Junction Temperature (Tj) |
150°C |
Height |
1.4mm |
Length |
3.1mm |
Width |
1.8mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Diodes Incorporated ZXMP6A17KTC
In stock
Manufacturer |
Diodes Incorporated |
---|---|
JESD-30 Code |
R-PSSO-G2 |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
3.949996g |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
4.4A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.11W Ta |
Turn Off Delay Time |
26.2 ns |
Operating Temperature |
-55°C~150°C TJ |
Published |
2009 |
JESD-609 Code |
e3 |
Packaging |
Cut Tape (CT) |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Resistance |
125mOhm |
Terminal Finish |
Matte Tin (Sn) |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
4 |
Mount |
Surface Mount |
Factory Lead Time |
17 Weeks |
Vgs (Max) |
±20V |
Fall Time (Typ) |
11.3 ns |
Power Dissipation |
9.25W |
Case Connection |
DRAIN |
Turn On Delay Time |
2.6 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
125m Ω @ 2.3A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
637pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs |
17.7nC @ 10V |
Rise Time |
3.4ns |
Drain to Source Voltage (Vdss) |
60V |
Element Configuration |
Single |
Number of Channels |
1 |
Continuous Drain Current (ID) |
6.6A |
JEDEC-95 Code |
TO-252AA |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
4.4A |
Drain to Source Breakdown Voltage |
-60V |
Height |
2.39mm |
Length |
6.73mm |
Width |
6.22mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Operating Mode |
ENHANCEMENT MODE |
Lead Free |
Lead Free |