Showing 7501–7512 of 7598 results
Vishay Siliconix SQJA92EP-T1_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| JESD-30 Code |
R-PSSO-G4 |
| Package / Case |
PowerPAK® SO-8 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
57A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
24 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
68W Tc |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Reach Compliance Code |
unknown |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Vgs (Max) |
±20V |
| Power Dissipation |
68W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
9.5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2650pF @ 25V |
| Number of Channels |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Continuous Drain Current (ID) |
57A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0095Ohm |
| Drain to Source Breakdown Voltage |
80V |
| Avalanche Energy Rating (Eas) |
54 mJ |
| Max Junction Temperature (Tj) |
175°C |
| Height |
1.267mm |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQJA94EP-T1_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
23 ns |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
46A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Reach Compliance Code |
unknown |
| Factory Lead Time |
14 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Power Dissipation (Max) |
55W Tc |
| JESD-30 Code |
R-PSSO-G4 |
| Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
55W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
13.5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
46A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
80V |
| Avalanche Energy Rating (Eas) |
36 mJ |
| Max Junction Temperature (Tj) |
175°C |
| Height |
1.267mm |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQJA96EP-T1_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| JESD-30 Code |
R-PSSO-G4 |
| Package / Case |
PowerPAK® SO-8 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
21 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
48W Tc |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Reach Compliance Code |
unknown |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Vgs (Max) |
±20V |
| Power Dissipation |
48W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
21.5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 25V |
| Number of Channels |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Continuous Drain Current (ID) |
30A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
80V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Avalanche Energy Rating (Eas) |
24 mJ |
| Max Junction Temperature (Tj) |
175°C |
| Height |
1.267mm |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQJQ410EL-T1_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Current - Continuous Drain (Id) @ 25℃ |
135A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
136W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.4m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQJQ466E-T1_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
14 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Supplier Device Package |
PowerPAK® 8 x 8 |
| Manufacturer Package Identifier |
C14-0891-SINGLE |
| Current - Continuous Drain (Id) @ 25℃ |
200A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
47 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Power Dissipation |
150W |
| Turn On Delay Time |
24 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.9mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10210pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
200A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Max Junction Temperature (Tj) |
175°C |
| Drain to Source Resistance |
1.7mOhm |
| Height |
2.03mm |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQM120N03-1M5L_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
64 ns |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
TO-263 |
| Weight |
1.946308g |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Power Dissipation (Max) |
375W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Fall Time (Typ) |
11 ns |
| Turn On Delay Time |
18 ns |
| Rds On (Max) @ Id, Vgs |
1.5mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
15605pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
270nC @ 10V |
| Rise Time |
11ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120A |
| Threshold Voltage |
2V |
| Power Dissipation |
375W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
15.605nF |
| Drain to Source Resistance |
1.5mOhm |
| Rds On Max |
1.5 mΩ |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQM35N30-97_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Terminal Position |
SINGLE |
| ECCN Code |
EAR99 |
| Number of Terminations |
2 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
375W Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Transistor Element Material |
SILICON |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Voltage (Vdss) |
300V |
| Avalanche Energy Rating (Eas) |
54 mJ |
| DS Breakdown Voltage-Min |
300V |
| Pulsed Drain Current-Max (IDM) |
75A |
| Drain-source On Resistance-Max |
0.097Ohm |
| Drain Current-Max (Abs) (ID) |
35A |
| Vgs (Max) |
±20V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
5650pF @ 25V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Rds On (Max) @ Id, Vgs |
97m Ω @ 10A, 10V |
| FET Type |
N-Channel |
| Operating Mode |
ENHANCEMENT MODE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix SQM40010EL_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
14 Weeks |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
375W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.6m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
17100pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120A |
| Threshold Voltage |
2V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQM40031EL_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
375W Tc |
| Turn Off Delay Time |
250 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
800nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
375W |
| Turn On Delay Time |
21 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
39000pF @ 25V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| JESD-30 Code |
R-PSSO-G2 |
| Continuous Drain Current (ID) |
-120A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.003Ohm |
| Drain to Source Breakdown Voltage |
-40V |
| Pulsed Drain Current-Max (IDM) |
300A |
| Max Junction Temperature (Tj) |
175°C |
| Height |
5.08mm |
| Number of Channels |
1 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQM40N15-38_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
24 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
TO-263 (D2Pak) |
| Weight |
1.437803g |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Channels |
1 |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation (Max) |
166W Tc |
| Element Configuration |
Single |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
40A |
| Rds On (Max) @ Id, Vgs |
38mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3390pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
| Rise Time |
17ns |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
150V |
| Input Capacitance |
3.39nF |
| Drain to Source Resistance |
38mOhm |
| Rds On Max |
38 mΩ |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQM47N10-24L_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
47A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
136W Tc |
| Pin Count |
4 |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Turn Off Delay Time |
32 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
6ns |
| Drain to Source Voltage (Vdss) |
100V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
136W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
24m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3620pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
72nC @ 10V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
47A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.024Ohm |
| Avalanche Energy Rating (Eas) |
92 mJ |
| Nominal Vgs |
2 V |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQM50028EM_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
14 Weeks |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
TO-263-7 |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
375W Tc |
| Turn Off Delay Time |
105 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Power Dissipation |
375W |
| Turn On Delay Time |
48 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
185nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Max Junction Temperature (Tj) |
175°C |
| Drain to Source Resistance |
1.63mOhm |
| Height |
5.08mm |
| RoHS Status |
RoHS Compliant |