Showing 7513–7524 of 7598 results
Vishay Siliconix SQM50N04-4M1_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Channels |
1 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
TO-263 (D2Pak) |
| Weight |
1.946308g |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Turn Off Delay Time |
35 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
150W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
50A |
| Rds On (Max) @ Id, Vgs |
4.1mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6715pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
105nC @ 10V |
| Rise Time |
5ns |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
12 ns |
| Element Configuration |
Single |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
6.715nF |
| Drain to Source Resistance |
4.1mOhm |
| Rds On Max |
4.1 mΩ |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQM70060EL_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
166W Tc |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.9m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5500pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
67A |
| Drain-source On Resistance-Max |
0.0059Ohm |
| Pulsed Drain Current-Max (IDM) |
180A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
180 mJ |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQM90142E_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
95A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
375W Tc |
| Reach Compliance Code |
unknown |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
39 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
4200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
85nC @ 10V |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
375W |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
15.3m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
95A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Avalanche Energy Rating (Eas) |
205 mJ |
| Max Junction Temperature (Tj) |
175°C |
| Height |
5.08mm |
| RoHS Status |
RoHS Compliant |
Vishay Siliconix SQP120N06-06_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220AB |
| Current - Continuous Drain (Id) @ 25℃ |
119A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
175W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6495pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
145nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
Vishay Siliconix SQP120N10-09_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation (Max) |
375W Tc |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Number of Elements |
1 |
| Reach Compliance Code |
unknown |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
9.5m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
8645pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
120A |
| Drain-source On Resistance-Max |
0.0095Ohm |
| Pulsed Drain Current-Max (IDM) |
480A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
266 mJ |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix SQP25N15-52_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220AB |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
107W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
52mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2360pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
Vishay Siliconix SQP50P03-07_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Cut Tape (CT) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220AB |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
150W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Factory Lead Time |
12 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
7mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5380pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
155nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix SQR70090ELR_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation (Max) |
136W Tc |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-252-4, DPak (3 Leads + Tab) |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
86A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Terminal Form |
GULL WING |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Number of Elements |
1 |
| Reach Compliance Code |
unknown |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.7m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3500pF @ 25V |
| JESD-30 Code |
R-PSSO-G3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
86A |
| Drain-source On Resistance-Max |
0.0087Ohm |
| Pulsed Drain Current-Max (IDM) |
150A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
101 mJ |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQS484ENW-T1_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
25 ns |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® 1212-8 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Reach Compliance Code |
unknown |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Power Dissipation (Max) |
62.5W Tc |
| JESD-30 Code |
S-PDSO-F5 |
| Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
62.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
16A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
64A |
| Max Junction Temperature (Tj) |
175°C |
| Height |
1.17mm |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQS850EN-T1_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Package / Case |
PowerPAK® 1212-8 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
240 |
| Power Dissipation (Max) |
33W Tc |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2021pF @ 30V |
| Reference Standard |
AEC-Q101 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
21.5m Ω @ 6.1A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
12A |
| Drain-source On Resistance-Max |
0.0215Ohm |
| Pulsed Drain Current-Max (IDM) |
48A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
26 mJ |
| JESD-30 Code |
S-PDSO-F5 |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix SQV120N06-4M7L_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Turn Off Delay Time |
46 ns |
| JESD-30 Code |
R-PSIP-T3 |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
250W |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.7m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
8800pF @ 25V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
120A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0047Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
300A |
| Avalanche Energy Rating (Eas) |
320 mJ |
| Max Junction Temperature (Tj) |
175°C |
| Height |
14.86mm |
| RoHS Status |
RoHS Compliant |
Vishay Siliconix SQV120N10-3M8_GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Power Dissipation (Max) |
250W Tc |
| Reach Compliance Code |
unknown |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.8m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7230pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSIP-T3 |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
120A |
| Drain-source On Resistance-Max |
0.0038Ohm |
| Pulsed Drain Current-Max (IDM) |
480A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
266 mJ |
| RoHS Status |
Non-RoHS Compliant |