Showing 7525–7536 of 7598 results
Vishay Siliconix SUB75P03-07-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Cut Tape (CT) |
| Supplier Device Package |
TO-263 (D2Pak) |
| Weight |
2.240009g |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 187W Tc |
| Turn Off Delay Time |
150 ns |
| Power Dissipation |
187W |
| Operating Temperature |
-55°C~175°C TJ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
7mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
-30V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
75A |
| FET Type |
P-Channel |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
225ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
210 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-30V |
| Turn On Delay Time |
25 ns |
| Input Capacitance |
9nF |
| Drain to Source Resistance |
7mOhm |
| Rds On Max |
7 mΩ |
| Height |
4.83mm |
| Length |
10.41mm |
| Width |
9.65mm |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
7mOhm @ 30A, 10V |
| Lead Free |
Lead Free |
Vishay Siliconix SUD06N10-225L-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2009 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-252, (D-Pak) |
| Current - Continuous Drain (Id) @ 25℃ |
6.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.25W Ta 20W Tc |
| Turn Off Delay Time |
8 ns |
| Operating Temperature |
-55°C~175°C TJ |
| FET Type |
N-Channel |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
200mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Power Dissipation |
20W |
| Turn On Delay Time |
7 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain to Source Breakdown Voltage |
100V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
4nC @ 5V |
| Rise Time |
8ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
6.5A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
240pF |
| Drain to Source Resistance |
200mOhm |
| Rds On (Max) @ Id, Vgs |
200mOhm @ 3A, 10V |
| Rds On Max |
200 mΩ |
| Nominal Vgs |
1 V |
| Height |
2.38mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
240pF @ 25V |
| Lead Free |
Lead Free |
Vishay Siliconix SUD08P06-155L-T4E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
TO-252, (D-Pak) |
| Current - Continuous Drain (Id) @ 25℃ |
8.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1.7W Ta 20.8W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
155mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
450pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
8.4A |
| Input Capacitance |
450pF |
| Rds On Max |
155 mΩ |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUD09P10-195-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 32.1W Tc |
| Turn Off Delay Time |
33 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2010 |
| Series |
TrenchFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
195mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Pin Count |
4 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Power Dissipation |
2.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
195m Ω @ 3.6A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1055pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
34.8nC @ 10V |
| Rise Time |
12ns |
| Number of Channels |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
-8.8A |
| Threshold Voltage |
-1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-100V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
2.507mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Vishay Siliconix SUD17N25-165-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta 136W Tc |
| Turn Off Delay Time |
30 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
165mOhm |
| Terminal Form |
GULL WING |
| Pin Count |
4 |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±20V |
| Power Dissipation |
3W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
165m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1950pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Rise Time |
130ns |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Fall Time (Typ) |
100 ns |
| Continuous Drain Current (ID) |
17A |
| Gate to Source Voltage (Vgs) |
20V |
| Pulsed Drain Current-Max (IDM) |
20A |
| DS Breakdown Voltage-Min |
250V |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Vishay Siliconix SUD19N20-90-T4-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Pin Count |
4 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
19A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta 136W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
30 ns |
| Published |
2012 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Rise Time |
50ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
90m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
51nC @ 10V |
| Number of Channels |
1 |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
60 ns |
| Continuous Drain Current (ID) |
19A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
40A |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUD23N06-31-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
5.7W Ta 31.25W Tc |
| Turn Off Delay Time |
35 ns |
| Pin Count |
4 |
| Factory Lead Time |
14 Weeks |
| Published |
2009 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
31mOhm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
68 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
5.7W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
31m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
670pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Rise Time |
250ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
9.1A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
50A |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SUD25N04-25-T4-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
3W Ta 33W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
510pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
25A |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUD40N08-16-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2009 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta 136W Tc |
| Turn Off Delay Time |
25 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Pin Count |
4 |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
16mOhm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
20 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Fall Time (Typ) |
10 ns |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1960pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Rise Time |
52ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
40A |
| Threshold Voltage |
2V |
| JESD-30 Code |
R-PSSO-G2 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
80V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Dual Supply Voltage |
80V |
| Nominal Vgs |
4 V |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Vishay Siliconix SUD42N03-3M9P-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
2 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 73.5W Tc |
| Turn Off Delay Time |
35 ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Published |
2008 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
| Rise Time |
10ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.9m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3535pF @ 15V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
42A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0039Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SUD45P03-10-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
4W Ta 70W Tc |
| Turn Off Delay Time |
100 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Pin Count |
4 |
| Mount |
Surface Mount, Through Hole |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
10mOhm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
20 |
| Series |
TrenchFET® |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
4W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
10m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Rise Time |
375ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Fall Time (Typ) |
140 ns |
| Continuous Drain Current (ID) |
-15A |
| Threshold Voltage |
-3V |
| Gate to Source Voltage (Vgs) |
20V |
| Dual Supply Voltage |
-30V |
| Nominal Vgs |
-1 V |
| Height |
2.38mm |
| Length |
6.73mm |
| Width |
6.22mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SUD45P04-16P-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
36A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 41.7W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
42 ns |
| Published |
2017 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Pin Count |
4 |
| Mount |
Surface Mount |
| Factory Lead Time |
13 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
| Rise Time |
20ns |
| Power Dissipation |
2.1W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16.2m Ω @ 14A, 20V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2765pF @ 20V |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
36A |
| Gate to Source Voltage (Vgs) |
20V |
| DS Breakdown Voltage-Min |
40V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |