Showing 7537–7548 of 7598 results
Vishay Siliconix SUD50N02-04P-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
2 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
8.3W Ta 136W Tc |
| Turn Off Delay Time |
50 ns |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Published |
2016 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Operating Temperature |
-55°C~175°C TJ |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 4.5V |
| Rise Time |
20ns |
| Power Dissipation |
8.3W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.3m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5000pF @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
34A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.006Ohm |
| Drain to Source Breakdown Voltage |
20V |
| Pulsed Drain Current-Max (IDM) |
100A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUD50N024-09P-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
2 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
49A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
6.5W Ta 39.5W Tc |
| Turn Off Delay Time |
25 ns |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2009 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Mount |
Surface Mount |
| Factory Lead Time |
13 Weeks |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
6.5W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.5m Ω @ 20A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 4.5V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rise Time |
10ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
49A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.017Ohm |
| Drain to Source Breakdown Voltage |
22V |
| Pulsed Drain Current-Max (IDM) |
100A |
| Pin Count |
4 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUD50N03-06AP-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2009 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
10W Ta 83W Tc |
| Turn Off Delay Time |
25 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
14 Weeks |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
5.7mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
4 |
| Rise Time |
230ns |
| Drain to Source Voltage (Vdss) |
30V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
10W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
26 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.7m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3800pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Channels |
1 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
90A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
50A |
| Nominal Vgs |
1.2 V |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SUD50N03-09P-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
TrenchFET® |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
63A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
7.5W Ta 65.2W Tc |
| Turn Off Delay Time |
22 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Pin Count |
4 |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
9.5MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
15ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
7.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.5m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 4.5V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
63A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
50A |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
50A |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SUD50N03-11-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2013 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
7.5W Ta 62.5W Tc |
| Turn Off Delay Time |
18 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 5V |
| Rise Time |
10ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
7.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
800mV @ 250μA (Min) |
| Input Capacitance (Ciss) (Max) @ Vds |
1130pF @ 25V |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
50A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.011Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
100A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUD50N03-12P-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Turn Off Delay Time |
20 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
TO-252 |
| Current - Continuous Drain (Id) @ 25℃ |
16.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Min Operating Temperature |
-55°C |
| Contact Plating |
Tin |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Power Dissipation (Max) |
39W Tc |
| Number of Channels |
1 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
17mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Rise Time |
15ns |
| Element Configuration |
Single |
| Turn On Delay Time |
9 ns |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
17.5A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
1.6nF |
| Drain to Source Resistance |
12mOhm |
| Rds On Max |
17 mΩ |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUD50N03-16P-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Number of Pins |
3 |
| Supplier Device Package |
TO-252, (D-Pak) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
6.5W Ta 40.8W Tc |
| Turn Off Delay Time |
25 ns |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2009 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
12 ns |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1150pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 4.5V |
| Rise Time |
20ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
20V |
| Power Dissipation |
6.5W |
| Drain to Source Breakdown Voltage |
30V |
| Dual Supply Voltage |
30V |
| Input Capacitance |
1.15nF |
| Drain to Source Resistance |
16mOhm |
| Rds On Max |
16 mΩ |
| REACH SVHC |
No SVHC |
| Rds On (Max) @ Id, Vgs |
16mOhm @ 15A, 10V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUD50P04-13L-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Element Configuration |
Single |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta 93.7W Tc |
| Turn Off Delay Time |
50 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Published |
2008 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
13mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
60A |
| Threshold Voltage |
-3V |
| Turn On Delay Time |
13 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3120pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
| Rise Time |
10ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Power Dissipation |
93.7mW |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
50A |
| Drain to Source Breakdown Voltage |
40V |
| Avalanche Energy Rating (Eas) |
80 mJ |
| Height |
2.38mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Vishay Siliconix SUD50P06-15L-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta 136W Tc |
| Turn Off Delay Time |
175 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
15mOhm |
| Terminal Form |
GULL WING |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Fall Time (Typ) |
175 ns |
| Continuous Drain Current (ID) |
-50A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4950pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
165nC @ 10V |
| Rise Time |
70ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Threshold Voltage |
-3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-60V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Nominal Vgs |
-1 V |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
3W |
| Lead Free |
Lead Free |
Vishay Siliconix SUD50P10-43L-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
37.1A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
8.3W Ta 136W Tc |
| Turn Off Delay Time |
110 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
43mOhm |
| Terminal Form |
GULL WING |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Fall Time (Typ) |
100 ns |
| Continuous Drain Current (ID) |
-9.2A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
43m Ω @ 9.2A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4600pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
160nC @ 10V |
| Rise Time |
160ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Threshold Voltage |
-3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-100V |
| Pulsed Drain Current-Max (IDM) |
40A |
| Max Junction Temperature (Tj) |
175°C |
| Height |
2.507mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
8.3W |
| Lead Free |
Lead Free |
Vishay Siliconix SUD70090E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Bulk |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
7.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Terminal Form |
GULL WING |
| Factory Lead Time |
14 Weeks |
| Published |
2017 |
| Series |
ThunderFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
1950pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
50nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.9m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
50A |
| Drain-source On Resistance-Max |
0.0089Ohm |
| Pulsed Drain Current-Max (IDM) |
120A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
80 mJ |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUG80050E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Reach Compliance Code |
unknown |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
7.5V 10V |
| Power Dissipation (Max) |
500W Tc |
| Turn Off Delay Time |
72 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Series |
ThunderFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
14 Weeks |
| Number of Channels |
1 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Power Dissipation |
500W |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.4m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6250pF @ 75V |
| Gate Charge (Qg) (Max) @ Vgs |
165nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
150V |
| Max Junction Temperature (Tj) |
175°C |
| Height |
25.11mm |
| RoHS Status |
ROHS3 Compliant |