Showing 7549–7560 of 7598 results
Vishay Siliconix SUM110N03-03P-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2009 |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 375W Tc |
| Turn Off Delay Time |
90 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Input Capacitance (Ciss) (Max) @ Vds |
12100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
250nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.75W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.6m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
20ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
110A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0026Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUM110N03-04P-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Pin Count |
4 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 120W Tc |
| Turn Off Delay Time |
40 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rise Time |
12ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
3.75W |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.2m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 4.5V |
| Element Configuration |
Single |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
110A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0042Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUM110N04-03-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
TrenchFET® |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 375W Tc |
| Turn Off Delay Time |
55 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Element Configuration |
Single |
| Published |
2009 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Channels |
1 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
110A |
| Power Dissipation |
437.5W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.8m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
8250pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
250nC @ 10V |
| Rise Time |
170ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
110 ns |
| Reverse Recovery Time |
60 ns |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Operating Mode |
ENHANCEMENT MODE |
| Drain-source On Resistance-Max |
0.0028Ohm |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
440A |
| Dual Supply Voltage |
40V |
| Nominal Vgs |
4 V |
| Height |
4.83mm |
| Length |
10.41mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Turn On Delay Time |
25 ns |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUM110N04-04-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 250W Tc |
| Turn Off Delay Time |
75 ns |
| Terminal Form |
GULL WING |
| Factory Lead Time |
6 Weeks |
| Published |
2016 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Operating Temperature |
-55°C~175°C TJ |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
115ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.75W |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.5m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6800pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
85 ns |
| Continuous Drain Current (ID) |
110A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0035Ohm |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
350A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUM110N04-2M3L-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| FET Type |
N-Channel |
| Number of Pins |
3 |
| Supplier Device Package |
TO-263 (D2Pak) |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
3.75W Ta 375W Tc |
| Turn Off Delay Time |
125 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2012 |
| Series |
TrenchFET® |
| Packaging |
Cut Tape (CT) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Power Dissipation |
3.75W |
| Turn On Delay Time |
25 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Gate Charge (Qg) (Max) @ Vgs |
360nC @ 10V |
| Rise Time |
100ns |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
200 ns |
| Reverse Recovery Time |
56 ns |
| Continuous Drain Current (ID) |
110A |
| Threshold Voltage |
3V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Rds On (Max) @ Id, Vgs |
2.3mOhm @ 30A, 10V |
| Dual Supply Voltage |
40V |
| Input Capacitance |
13.6nF |
| Drain to Source Resistance |
2.3mOhm |
| Rds On Max |
2.3 mΩ |
| Nominal Vgs |
3 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
13600pF @ 25V |
| Lead Free |
Lead Free |
Vishay Siliconix SUM110N06-3M4L-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 375W Tc |
| Turn Off Delay Time |
110 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Published |
2017 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
3.4mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
4 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
280 ns |
| Continuous Drain Current (ID) |
110A |
| Power Dissipation |
375W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.4m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
12900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
300nC @ 10V |
| Rise Time |
130ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
440A |
| Avalanche Energy Rating (Eas) |
280 mJ |
| Height |
4.83mm |
| Length |
10.41mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Vishay Siliconix SUM110P06-07L-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Terminations |
2 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.946308g |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
14 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
6.9MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
3.75W Ta 375W Tc |
| Element Configuration |
Single |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
3.75W |
| Turn-Off Delay Time |
110 ns |
| Continuous Drain Current (ID) |
-11A |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.9m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
110A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
345nC @ 10V |
| Rise Time |
160ns |
| Drain to Source Voltage (Vdss) |
60V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
240 ns |
| Turn On Delay Time |
20 ns |
| FET Type |
P-Channel |
| Threshold Voltage |
-3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-60V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
-3 V |
| Height |
5.08mm |
| Length |
10.41mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SUM110P06-08L-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
TO-263 (D2Pak) |
| Weight |
1.437803g |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 272W Tc |
| Power Dissipation |
3.75W |
| Turn Off Delay Time |
140 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
8MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
P-Channel |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
190ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
300 ns |
| Continuous Drain Current (ID) |
-110A |
| Threshold Voltage |
-1V |
| Drain to Source Breakdown Voltage |
-60V |
| Input Capacitance |
9.2nF |
| Turn On Delay Time |
20 ns |
| Max Junction Temperature (Tj) |
175°C |
| Drain to Source Resistance |
6.5mOhm |
| Rds On Max |
8 mΩ |
| Height |
5.08mm |
| Length |
10.41mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
8mOhm @ 30A, 10V |
| Lead Free |
Lead Free |
Vishay Siliconix SUM23N15-73-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2017 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
23A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 100W Tc |
| Turn Off Delay Time |
30 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Pin Count |
4 |
| Packaging |
Tape & Reel (TR) |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
73mOhm |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rise Time |
60ns |
| Element Configuration |
Single |
| Power Dissipation |
3.75W |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
73m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1290pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
45 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Continuous Drain Current (ID) |
23A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
150V |
| Nominal Vgs |
4 V |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Vishay Siliconix SUM33N20-60P-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2009 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
33A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V 15V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.12W Ta 156W Tc |
| Turn Off Delay Time |
26 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Pin Count |
3 |
| Mount |
Surface Mount |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| HTS Code |
8541.29.00.95 |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Reverse Recovery Time |
114 ns |
| Continuous Drain Current (ID) |
33A |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
59m Ω @ 20A, 15V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2735pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
113nC @ 15V |
| Rise Time |
170ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
9 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
4.5V |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.144Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Dual Supply Voltage |
200V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Nominal Vgs |
4.5 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUM40N15-38-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Number of Pins |
3 |
| Supplier Device Package |
TO-263 (D2Pak) |
| Weight |
1.437803g |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 166W Tc |
| Turn Off Delay Time |
30 ns |
| Power Dissipation |
3.75W |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2014 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
38mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Rise Time |
130ns |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
90 ns |
| Continuous Drain Current (ID) |
40A |
| Input Capacitance |
2.5nF |
| Drain to Source Resistance |
38mOhm |
| Turn On Delay Time |
15 ns |
| Rds On Max |
38 mΩ |
| Nominal Vgs |
4 V |
| Height |
4.83mm |
| Length |
10.41mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
38mOhm @ 15A, 10V |
| Lead Free |
Lead Free |
Vishay Siliconix SUM47N10-24L-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Min Operating Temperature |
-55°C |
| Number of Pins |
3 |
| Supplier Device Package |
TO-263 (D2Pak) |
| Current - Continuous Drain (Id) @ 25℃ |
47A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
15 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
3.75W Ta 136W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
80 ns |
| Rds On (Max) @ Id, Vgs |
24mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Rise Time |
40ns |
| Drain to Source Voltage (Vdss) |
100V |
| Power Dissipation |
3.75W |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
47A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance |
2.4nF |
| Drain to Source Resistance |
21mOhm |
| Rds On Max |
24 mΩ |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |