Showing 7561–7572 of 7598 results
Vishay Siliconix SUM50020EL-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
375W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
11113pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
126nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.1m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120A |
| Drain-source On Resistance-Max |
0.0021Ohm |
| Pulsed Drain Current-Max (IDM) |
300A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
281 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUM50N06-16L-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Cut Tape (CT) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
TO-263 (D2Pak) |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Power Dissipation (Max) |
3.7W Ta 93W Tc |
| Turn Off Delay Time |
25 ns |
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Published |
2007 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
16mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Operating Temperature |
-55°C~175°C TJ |
| Turn On Delay Time |
10 ns |
| Continuous Drain Current (ID) |
50A |
| Threshold Voltage |
2V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1325pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Rise Time |
9ns |
| Drain to Source Voltage (Vdss) |
60V |
| Fall Time (Typ) |
7 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
16mOhm @ 20A, 10V |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
1.325nF |
| Drain to Source Resistance |
16mOhm |
| Rds On Max |
16 mΩ |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SUM50P10-42-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
TrenchFET® |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
36A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
18.8W Ta 125W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
4 |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Reach Compliance Code |
unknown |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
160nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Power Dissipation |
18.8W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.2m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4600pF @ 50V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±20V |
| Polarity/Channel Type |
P-CHANNEL |
| Continuous Drain Current (ID) |
36A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.042Ohm |
| Pulsed Drain Current-Max (IDM) |
40A |
| Avalanche Energy Rating (Eas) |
80 mJ |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUM52N20-39P-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
52A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V 15V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.12W Ta 250W Tc |
| Turn Off Delay Time |
34 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Pin Count |
4 |
| Mount |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Continuous Drain Current (ID) |
52A |
| Threshold Voltage |
4.5V |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
38m Ω @ 20A, 15V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4220pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
185nC @ 15V |
| Rise Time |
170ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
9 ns |
| Reverse Recovery Time |
133 ns |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.094Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Dual Supply Voltage |
200V |
| Nominal Vgs |
4.5 V |
| Height |
4.83mm |
| Length |
10.41mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUM55P06-19L-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
55A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 125W Tc |
| Turn Off Delay Time |
80 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2007 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
19mOhm |
| Terminal Form |
GULL WING |
| Pin Count |
4 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Power Dissipation |
125W |
| Turn On Delay Time |
12 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
19m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
115nC @ 10V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
60V |
| Fall Time (Typ) |
230 ns |
| Continuous Drain Current (ID) |
-5.5A |
| Number of Channels |
1 |
| Threshold Voltage |
-1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
55A |
| Drain to Source Breakdown Voltage |
-60V |
| Height |
4.83mm |
| Length |
10.41mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Vishay Siliconix SUM60030E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
7.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
375W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
7910pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs |
141nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.2m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Drain to Source Voltage (Vdss) |
80V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120A |
| Drain-source On Resistance-Max |
0.0032Ohm |
| Pulsed Drain Current-Max (IDM) |
250A |
| DS Breakdown Voltage-Min |
80V |
| Avalanche Energy Rating (Eas) |
245 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUM70040M-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
14 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
7 |
| Supplier Device Package |
TO-263-7 |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
7.5V 10V |
| Power Dissipation (Max) |
375W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.8mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5100pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120A |
| Threshold Voltage |
4V |
| Input Capacitance |
5.1nF |
| Drain to Source Resistance |
3mOhm |
| Rds On Max |
3.8 mΩ |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUM90N03-2M2P-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2016 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 250W Tc |
| Turn Off Delay Time |
55 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
14 Weeks |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
2.2mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Cut Tape (CT) |
| Pin Count |
4 |
| Rise Time |
180ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.75W |
| Turn On Delay Time |
55 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.2m Ω @ 32A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
12065pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
257nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Channels |
1 |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
33A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
90A |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
90A |
| Height |
4.83mm |
| Length |
10.41mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SUM90N06-5M5P-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Number of Pins |
3 |
| Supplier Device Package |
TO-263 (D2Pak) |
| Weight |
1.437803g |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 272W Tc |
| Turn Off Delay Time |
25 ns |
| Power Dissipation |
3.75W |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2016 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
5.5MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4700pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Rise Time |
10ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
90A |
| Drain to Source Breakdown Voltage |
60V |
| Input Capacitance |
4.7nF |
| Turn On Delay Time |
16 ns |
| Drain to Source Resistance |
5.5mOhm |
| Rds On Max |
5.5 mΩ |
| Height |
4.83mm |
| Length |
10.41mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
5.5mOhm @ 20A, 10V |
| Lead Free |
Lead Free |
Vishay Siliconix SUM90N10-8M2P-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2013 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 300W Tc |
| Turn Off Delay Time |
34 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Pin Count |
3 |
| Factory Lead Time |
14 Weeks |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
8.2mOhm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
90A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Turn On Delay Time |
23 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.2m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6290pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Rise Time |
17ns |
| Vgs (Max) |
±20V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Threshold Voltage |
2.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Max Junction Temperature (Tj) |
175°C |
| Height |
4.826mm |
| Length |
10.41mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SUM90P10-19-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
13.6W Ta 375W Tc |
| Turn Off Delay Time |
125 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2009 |
| Series |
TrenchFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Pin Count |
4 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rise Time |
720ns |
| Drain to Source Voltage (Vdss) |
100V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
30 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
19m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
12000pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
330nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
610 ns |
| Continuous Drain Current (ID) |
17A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
90A |
| Drain to Source Breakdown Voltage |
-100V |
| Pulsed Drain Current-Max (IDM) |
90A |
| Radiation Hardening |
No |
| Power Dissipation |
13.6W |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUM90P10-19L-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
13.6W Ta 375W Tc |
| Turn Off Delay Time |
145 ns |
| Number of Channels |
1 |
| Factory Lead Time |
14 Weeks |
| Published |
2009 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
19mOhm |
| Terminal Form |
GULL WING |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Fall Time (Typ) |
870 ns |
| Continuous Drain Current (ID) |
-90A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
19m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11100pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
326nC @ 10V |
| Rise Time |
510ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
375W |
| Threshold Voltage |
-3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-100V |
| Avalanche Energy Rating (Eas) |
245 mJ |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
-3 V |
| Height |
5.08mm |
| Length |
10.41mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |