Showing 7573–7584 of 7598 results
Vishay Siliconix SUP10250E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
ThunderFET® |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
63A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
7.5V 10V |
| Power Dissipation (Max) |
375W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2017 |
| Factory Lead Time |
14 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
88nC @ 10V |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUP40010EL-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Power Dissipation (Max) |
375W Tc |
| Packaging |
Tube |
| Series |
ThunderFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.8m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11155pF @ 30V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
120A |
| Drain-source On Resistance-Max |
0.0018Ohm |
| Pulsed Drain Current-Max (IDM) |
300A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
320 mJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUP50010E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
14 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
7.5V 10V |
| Power Dissipation (Max) |
375W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10895pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
212nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUP50N03-5M1P-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.7W Ta 59.5W Tc |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Through Hole |
| Packaging |
Bulk |
| Published |
2008 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Peak Reflow Temperature (Cel) |
260 |
| Turn Off Delay Time |
35 ns |
| Pin Count |
3 |
| Rise Time |
9ns |
| Drain to Source Voltage (Vdss) |
30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.7W |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.1m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2780pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
50A |
| Threshold Voltage |
1V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Avalanche Energy Rating (Eas) |
80 mJ |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SUP60N10-18P-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
8V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 150W Tc |
| Pin Count |
3 |
| Mount |
Through Hole |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
18.3mOhm |
| Terminal Position |
SINGLE |
| Turn Off Delay Time |
18 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
18.3m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
75nC @ 10V |
| Rise Time |
10ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.75W |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
60A |
| Threshold Voltage |
4.5V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Nominal Vgs |
4.5 V |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SUP70030E-GE3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
14 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
7.5V 10V |
| Power Dissipation (Max) |
375W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
TrenchFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.18m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10870pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
214nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUP75P03-07-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 187W Tc |
| Turn Off Delay Time |
150 ns |
| Packaging |
Tube |
| Published |
2008 |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
7mOhm |
| Pin Count |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Threshold Voltage |
-1V |
| JEDEC-95 Code |
TO-220AB |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
225ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
210 ns |
| Continuous Drain Current (ID) |
-75A |
| Case Connection |
DRAIN |
| Power Dissipation |
187W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-30V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Nominal Vgs |
-3 V |
| Height |
9.01mm |
| Length |
10.41mm |
| Width |
4.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
25 ns |
| Lead Free |
Lead Free |
Vishay Siliconix SUP75P05-08-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Series |
TrenchFET® |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.7W Ta 250W Tc |
| Turn Off Delay Time |
115 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Packaging |
Tube |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
-75A |
| Threshold Voltage |
-2V |
| Turn On Delay Time |
13 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
8500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
225nC @ 10V |
| Rise Time |
140ns |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
175 ns |
| Power Dissipation |
250W |
| Case Connection |
DRAIN |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.008Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Nominal Vgs |
-2 V |
| Height |
9.01mm |
| Length |
10.41mm |
| Width |
4.7mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUP85N03-04P-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Power Dissipation |
166W |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB |
| Current - Continuous Drain (Id) @ 25℃ |
85A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 166W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
50 ns |
| Published |
2008 |
| Series |
TrenchFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
4.3mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
90nC @ 10V |
| Rise Time |
12ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
85A |
| FET Type |
N-Channel |
| Turn On Delay Time |
15 ns |
| Input Capacitance |
4.5nF |
| Drain to Source Resistance |
4.3mOhm |
| Rds On Max |
4.3 mΩ |
| Height |
15.494mm |
| Length |
10.4902mm |
| Width |
4.6482mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
4.3mOhm @ 30A, 10V |
| Lead Free |
Lead Free |
Vishay Siliconix SUP85N15-21-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
85A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.4W Ta 300W Tc |
| Pin Count |
3 |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tube |
| Published |
2001 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
150V |
| Turn Off Delay Time |
40 ns |
| Number of Channels |
1 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
170 ns |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
21m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4750pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
170ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
85A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
150V |
| Nominal Vgs |
2 V |
| Height |
9.01mm |
| Length |
10.41mm |
| Width |
4.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SUP90N03-03-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.75W Ta 250W Tc |
| Turn Off Delay Time |
55 ns |
| Number of Channels |
1 |
| Mount |
Through Hole |
| Published |
2011 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
2.9MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Pin Count |
3 |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
55 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.9m Ω @ 28.8A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
12065pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
257nC @ 10V |
| Rise Time |
180ns |
| Drain to Source Voltage (Vdss) |
30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.75W |
| Continuous Drain Current (ID) |
28.8A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
90A |
| Pulsed Drain Current-Max (IDM) |
90A |
| Avalanche Energy Rating (Eas) |
64.8 mJ |
| Height |
9.01mm |
| Length |
10.41mm |
| Width |
4.7mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix SUP90P06-09L-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.4W Ta 250W Tc |
| Turn Off Delay Time |
140 ns |
| Number of Channels |
1 |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2008 |
| Series |
TrenchFET® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
9.3mOhm |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
3 |
| Contact Plating |
Tin |
| Factory Lead Time |
14 Weeks |
| Fall Time (Typ) |
300 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.3m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
190ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
90A |
| Threshold Voltage |
-1V |
| Element Configuration |
Single |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-60V |
| Pulsed Drain Current-Max (IDM) |
200A |
| Max Junction Temperature (Tj) |
175°C |
| Height |
19.31mm |
| Length |
10.41mm |
| Width |
4.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
2.4W |
| Lead Free |
Lead Free |