Transistors - FETs/MOSFETs - Single

Fairchild FQI7N60TU

In stock

SKU: FQI7N60TU-11
Manufacturer

Fairchild

Operating Temperature

-55°C ~ 150°C (TJ)

Supplier Device Package

I2PAK (TO-262)

Base Product Number

FQI7N60

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

Fairchild Semiconductor

Package

Bulk

Power Dissipation (Max)

3.13W (Ta), 142W (Tc)

Product Status

Active

Mounting Type

Through Hole

Technology

MOSFET (Metal Oxide)

Series

QFET®

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

1Ohm @ 3.7A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

1430 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

7.4A (Tc)

Gate Charge (Qg) (Max) @ Vgs

38 nC @ 10 V

Drain to Source Voltage (Vdss)

600 V

Vgs (Max)

±30V

Fairchild FQP18N50V2

In stock

SKU: FQP18N50V2-11
Manufacturer

Fairchild

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

Fairchild Semiconductor

Package

Tube

Power Dissipation (Max)

208W (Tc)

Product Status

Obsolete

Mounting Type

Through Hole

Technology

MOSFET (Metal Oxide)

Series

QFET®

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

265mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

3290 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Gate Charge (Qg) (Max) @ Vgs

55 nC @ 10 V

Drain to Source Voltage (Vdss)

500 V

Vgs (Max)

±30V

Fairchild FQP19N10L

In stock

SKU: FQP19N10L-11
Manufacturer

Fairchild

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Mfr

Fairchild Semiconductor

Package

Tube

Power Dissipation (Max)

75W (Tc)

Product Status

Obsolete

Mounting Type

Through Hole

Technology

MOSFET (Metal Oxide)

Series

QFET®

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

100mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

870 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Gate Charge (Qg) (Max) @ Vgs

18 nC @ 5 V

Drain to Source Voltage (Vdss)

100 V

Vgs (Max)

±20V

Fairchild FQP6N70

In stock

SKU: FQP6N70-11
Manufacturer

Fairchild

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

Base Product Number

FQP6

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

Fairchild Semiconductor

Package

Bulk

Power Dissipation (Max)

142W (Tc)

Product Status

Active

Operating Temperature

-55°C ~ 150°C (TJ)

Series

QFET®

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

1.5Ohm @ 3.1A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

1400 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

6.2A (Tc)

Gate Charge (Qg) (Max) @ Vgs

40 nC @ 10 V

Drain to Source Voltage (Vdss)

700 V

Vgs (Max)

±30V

Fairchild FQPF13N50C

In stock

SKU: FQPF13N50C-11
Manufacturer

Fairchild

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220F

Base Product Number

FQPF1

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

Fairchild Semiconductor

Package

Tube

Power Dissipation (Max)

48W (Tc)

Product Status

Active

Operating Temperature

-55°C ~ 150°C (TJ)

Series

QFET®

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

480mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

2055 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Gate Charge (Qg) (Max) @ Vgs

56 nC @ 10 V

Drain to Source Voltage (Vdss)

500 V

Vgs (Max)

±30V

Fairchild FQPF19N20

In stock

SKU: FQPF19N20-11
Manufacturer

Fairchild

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220F-3

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

Fairchild Semiconductor

Package

Bulk

Power Dissipation (Max)

50W (Tc)

Product Status

Active

Mounting Type

Through Hole

Technology

MOSFET (Metal Oxide)

Series

QFET®

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

150mOhm @ 5.9A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

1600 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

11.8A (Tc)

Gate Charge (Qg) (Max) @ Vgs

40 nC @ 10 V

Drain to Source Voltage (Vdss)

200 V

Vgs (Max)

±30V

Fairchild FQPF33N10

In stock

SKU: FQPF33N10-11
Manufacturer

Fairchild

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220F-3

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

Fairchild Semiconductor

Package

Bulk

Power Dissipation (Max)

41W (Tc)

Product Status

Active

Mounting Type

Through Hole

Technology

MOSFET (Metal Oxide)

Series

QFET®

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

52mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

1500 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Gate Charge (Qg) (Max) @ Vgs

51 nC @ 10 V

Drain to Source Voltage (Vdss)

100 V

Vgs (Max)

±25V

Fairchild FQPF5N50CFTU

In stock

SKU: FQPF5N50CFTU-11
Manufacturer

Fairchild

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220F-3

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

Fairchild Semiconductor

Package

Tube

Power Dissipation (Max)

38W (Tc)

Product Status

Obsolete

Mounting Type

Through Hole

Technology

MOSFET (Metal Oxide)

Series

FRFET®

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

1.55Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

625 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Gate Charge (Qg) (Max) @ Vgs

24 nC @ 10 V

Drain to Source Voltage (Vdss)

500 V

Vgs (Max)

±30V

Fairchild FQPF6N25

In stock

SKU: FQPF6N25-11
Manufacturer

Fairchild

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220F-3

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

Fairchild Semiconductor

Package

Tube

Power Dissipation (Max)

37W (Tc)

Product Status

Obsolete

Mounting Type

Through Hole

Technology

MOSFET (Metal Oxide)

Series

QFET®

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

1Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

300 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Gate Charge (Qg) (Max) @ Vgs

8.5 nC @ 10 V

Drain to Source Voltage (Vdss)

250 V

Vgs (Max)

±30V

Fairchild HUF75332S3ST

In stock

SKU: HUF75332S3ST-11
Manufacturer

Fairchild

Series

UltraFET™

Supplier Device Package

D2PAK (TO-263)

Mfr

Fairchild Semiconductor

Package

Bulk

Power Dissipation (Max)

110W (Tc)

Product Status

Obsolete

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs

19mOhm @ 52A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

1300 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Gate Charge (Qg) (Max) @ Vgs

85 nC @ 20 V

Drain to Source Voltage (Vdss)

55 V

Vgs (Max)

±20V

Fairchild HUF75631S3ST

In stock

SKU: HUF75631S3ST-11
Manufacturer

Fairchild

Operating Temperature

-55°C ~ 175°C (TJ)

Supplier Device Package

D2PAK (TO-263)

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

Fairchild Semiconductor

Package

Bulk

Power Dissipation (Max)

120W (Tc)

Product Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs

40mOhm @ 33A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

1220 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Gate Charge (Qg) (Max) @ Vgs

79 nC @ 20 V

Drain to Source Voltage (Vdss)

100 V

Vgs (Max)

±20V

Fairchild HUF76419D3

In stock

SKU: HUF76419D3-11
Manufacturer

Fairchild

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mfr

Fairchild Semiconductor

Package

Tube

Power Dissipation (Max)

75W (Tc)

Product Status

Obsolete

Operating Temperature

-55°C ~ 175°C (TJ)

Series

UltraFET™

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

37mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

900 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Gate Charge (Qg) (Max) @ Vgs

27.5 nC @ 10 V

Drain to Source Voltage (Vdss)

60 V

Vgs (Max)

±16V