Showing 865–876 of 7598 results
GOFORD 18N20J
In stock
| Manufacturer |
GOFORD |
|---|---|
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Supplier Device Package |
TO-251 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
Goford Semiconductor |
| Package |
Tube |
| Power Dissipation (Max) |
65.8W (Tc) |
| Product Status |
Active |
| Mounting Type |
Through Hole |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs |
160mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
836 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
18A (Tj) |
| Gate Charge (Qg) (Max) @ Vgs |
17.7 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
200 V |
| Vgs (Max) |
±30V |
GOFORD G110N06T
In stock
| Manufacturer |
GOFORD |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
Goford Semiconductor |
| Package |
Tube |
| Power Dissipation (Max) |
120W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.4mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
5538 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
110A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
113 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
60 V |
| Vgs (Max) |
±20V |
GOFORD G200P04D3
In stock
| Manufacturer |
GOFORD |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Supplier Device Package |
8-DFN (3.15×3.05) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
Goford Semiconductor |
| Package |
Tape & Reel (TR) |
| Power Dissipation (Max) |
30W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
75mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
2662 pF @ 20 V |
| Current - Continuous Drain (Id) @ 25°C |
20A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
54 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
40 V |
| Vgs (Max) |
±20V |
GOFORD G20P06K
In stock
| Manufacturer |
GOFORD |
|---|---|
| Mounting Type |
Surface Mount |
| Supplier Device Package |
TO-252 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
Goford Semiconductor |
| Power Dissipation (Max) |
90W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
45mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
3430 pF @ 30 V |
| Current - Continuous Drain (Id) @ 25°C |
20A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
46 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
60 V |
| Vgs (Max) |
±20V |