Showing 877–888 of 7598 results
GOFORD G2K3N10H
In stock
| Manufacturer |
GOFORD |
|---|---|
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Package / Case |
TO-261-4, TO-261AA |
| Supplier Device Package |
SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
Goford Semiconductor |
| Power Dissipation (Max) |
2.4W (Tc) |
| Product Status |
Active |
| Mounting Type |
Surface Mount |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs |
220mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
434 pF @ 50 V |
| Current - Continuous Drain (Id) @ 25°C |
2A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
13 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
100 V |
| Vgs (Max) |
±20V |
GOFORD G300P06D5
In stock
| Manufacturer |
GOFORD |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Supplier Device Package |
8-DFN (4.9×5.75) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
Goford Semiconductor |
| Power Dissipation (Max) |
50W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Series |
G |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
30mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
2705 pF @ 30 V |
| Current - Continuous Drain (Id) @ 25°C |
40A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
49 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
60 V |
| Vgs (Max) |
±20V |
GOFORD G40P03D5
In stock
| Manufacturer |
GOFORD |
|---|---|
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Package / Case |
8-PowerTDFN |
| Supplier Device Package |
8-DFN (5×6) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
Goford Semiconductor |
| Power Dissipation (Max) |
48W (Tc) |
| Product Status |
Active |
| Mounting Type |
Surface Mount |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs |
10mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
2716 pF @ 15 V |
| Current - Continuous Drain (Id) @ 25°C |
35A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
50 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
30 V |
| Vgs (Max) |
±20V |
GOFORD G75P04D5I
In stock
| Manufacturer |
GOFORD |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Supplier Device Package |
8-DFN (4.9×5.75) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
Goford Semiconductor |
| Package |
Tape & Reel (TR) |
| Power Dissipation (Max) |
150W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
6.5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
6414 pF @ 20 V |
| Current - Continuous Drain (Id) @ 25°C |
70A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
106 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
40 V |
| Vgs (Max) |
±20V |
GOFORD G7K2N20HE
In stock
| Manufacturer |
GOFORD |
|---|---|
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Package / Case |
TO-261-4, TO-261AA |
| Supplier Device Package |
SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
Goford Semiconductor |
| Power Dissipation (Max) |
1.8W (Tc) |
| Product Status |
Active |
| Mounting Type |
Surface Mount |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs |
700mOhm @ 1A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
568 pF @ 100 V |
| Current - Continuous Drain (Id) @ 25°C |
2A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
10.8 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
200 V |
| Vgs (Max) |
±20V |
GOFORD G900P15T
In stock
| Manufacturer |
GOFORD |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
Goford Semiconductor |
| Package |
Tube |
| Power Dissipation (Max) |
100W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
80mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
3932 pF @ 75 V |
| Current - Continuous Drain (Id) @ 25°C |
60A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
27 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
150 V |
| Vgs (Max) |
±20V |
GOFORD GC20N65T
In stock
| Manufacturer |
GOFORD |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
Goford Semiconductor |
| Package |
Tube |
| Power Dissipation (Max) |
151W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
170mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
1724 pF @ 100 V |
| Current - Continuous Drain (Id) @ 25°C |
20A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
39 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
650 V |
| Vgs (Max) |
±30V |
GOFORD GT025N06AM
In stock
| Manufacturer |
GOFORD |
|---|---|
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Supplier Device Package |
TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
Goford Semiconductor |
| Package |
Tape & Reel (TR) |
| Power Dissipation (Max) |
215W (Tc) |
| Product Status |
Active |
| Mounting Type |
Surface Mount |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs |
2.5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
5119 pF @ 30 V |
| Current - Continuous Drain (Id) @ 25°C |
170A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
70 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
60 V |
| Vgs (Max) |
±20V |
GOFORD GT060N04K
In stock
| Manufacturer |
GOFORD |
|---|---|
| Mounting Type |
Surface Mount |
| Supplier Device Package |
TO-252 |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
Goford Semiconductor |
| Power Dissipation (Max) |
44W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.5mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
1279 pF @ 20 V |
| Current - Continuous Drain (Id) @ 25°C |
54A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
19 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
40 V |
| Vgs (Max) |
±20V |
GOFORD GT060N04T
In stock
| Manufacturer |
GOFORD |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
Goford Semiconductor |
| Package |
Tube |
| Power Dissipation (Max) |
48W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
1301 pF @ 20 V |
| Current - Continuous Drain (Id) @ 25°C |
60A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
19 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
40 V |
| Vgs (Max) |
±20V |
GOFORD GT105N10K
In stock
| Manufacturer |
GOFORD |
|---|---|
| Mounting Type |
Surface Mount |
| Supplier Device Package |
TO-252 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
Goford Semiconductor |
| Power Dissipation (Max) |
83W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
10.5mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
1574 pF @ 50 V |
| Current - Continuous Drain (Id) @ 25°C |
60A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
16 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
100 V |
| Vgs (Max) |
±20V |