Transistors - FETs/MOSFETs - Single

Good-Ark Semiconductor GSF0301

In stock

SKU: GSF0301-11
Manufacturer

Good-Ark Semiconductor

Mfr

Good-Ark Semiconductor

Product Status

Active

Series

*

Good-Ark Semiconductor GSFC02501

In stock

SKU: GSFC02501-11
Manufacturer

Good-Ark Semiconductor

Mfr

Good-Ark Semiconductor

Product Status

Active

Series

*

Good-Ark Semiconductor GSFC0301

In stock

SKU: GSFC0301-11
Manufacturer

Good-Ark Semiconductor

Mfr

Good-Ark Semiconductor

Product Status

Active

Series

*

Good-Ark Semiconductor GSFD06C20

In stock

SKU: GSFD06C20-11
Manufacturer

Good-Ark Semiconductor

Mfr

Good-Ark Semiconductor

Product Status

Active

Series

*

Good-Ark Semiconductor GSFN3904

In stock

SKU: GSFN3904-11
Manufacturer

Good-Ark Semiconductor

Mfr

Good-Ark Semiconductor

Product Status

Active

Series

*

Good-Ark Semiconductor GSFP08130

In stock

SKU: GSFP08130-11
Manufacturer

Good-Ark Semiconductor

Mfr

Good-Ark Semiconductor

Product Status

Active

Series

*

Good-Ark Semiconductor GSFP0876

In stock

SKU: GSFP0876-11
Manufacturer

Good-Ark Semiconductor

Mfr

Good-Ark Semiconductor

Product Status

Active

Series

*

HARRIS HUF75333S3

In stock

SKU: HUF75333S3-11
Manufacturer

HARRIS

Series

UltraFET™

Supplier Device Package

D2PAK (TO-263)

Mfr

Harris Corporation

Package

Bulk

Power Dissipation (Max)

150W (Tc)

Product Status

Active

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs

16mOhm @ 66A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

1300 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

66A (Tc)

Gate Charge (Qg) (Max) @ Vgs

85 nC @ 20 V

Drain to Source Voltage (Vdss)

55 V

Vgs (Max)

±20V

HARRIS HUF75639S3

In stock

SKU: HUF75639S3-11
Manufacturer

HARRIS

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

Harris Corporation

Package

Tube

Power Dissipation (Max)

200W (Tc)

Product Status

Obsolete

Operating Temperature

-55°C ~ 175°C (TJ)

Series

UltraFET™

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

25mOhm @ 56A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

2000 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Gate Charge (Qg) (Max) @ Vgs

130 nC @ 20 V

Drain to Source Voltage (Vdss)

100 V

Vgs (Max)

±20V

HARRIS IRF520

In stock

SKU: IRF520-11
Manufacturer

HARRIS

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Mfr

Harris Corporation

Package

Bulk

Power Dissipation (Max)

60W (Tc)

Product Status

Active

Mounting Type

Through Hole

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs

270mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

350 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

9.2A (Tc)

Gate Charge (Qg) (Max) @ Vgs

15 nC @ 10 V

Drain to Source Voltage (Vdss)

100 V

Vgs (Max)

±20V

HARRIS IRF610

In stock

SKU: IRF610-11
Manufacturer

HARRIS

Product Status

Active

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Base Product Number

IRF610

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

Harris Corporation

Package

Bulk

Power Dissipation (Max)

36W (Tc)

Mounting Type

Through Hole

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

1.5Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

140 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

3.3A (Tc)

Gate Charge (Qg) (Max) @ Vgs

8.2 nC @ 10 V

Drain to Source Voltage (Vdss)

200 V

Vgs (Max)

±20V

HARRIS IRF710

In stock

SKU: IRF710-11
Manufacturer

HARRIS

Product Status

Active

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Base Product Number

IRF710

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

Harris Corporation

Package

Bulk

Power Dissipation (Max)

36W (Tc)

Mounting Type

Through Hole

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

3.6Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

135 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Gate Charge (Qg) (Max) @ Vgs

12 nC @ 10 V

Drain to Source Voltage (Vdss)

400 V

Vgs (Max)

±20V