Showing 889–900 of 7598 results
Transistors - FETs/MOSFETs - Single
HARRIS HUF75333S3
In stock
Manufacturer |
HARRIS |
---|---|
Series |
UltraFET™ |
Supplier Device Package |
D2PAK (TO-263) |
Mfr |
Harris Corporation |
Package |
Bulk |
Power Dissipation (Max) |
150W (Tc) |
Product Status |
Active |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs |
16mOhm @ 66A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
1300 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
66A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
85 nC @ 20 V |
Drain to Source Voltage (Vdss) |
55 V |
Vgs (Max) |
±20V |
HARRIS HUF75639S3
In stock
Manufacturer |
HARRIS |
---|---|
Mounting Type |
Through Hole |
Supplier Device Package |
I2PAK (TO-262) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Harris Corporation |
Package |
Tube |
Power Dissipation (Max) |
200W (Tc) |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Series |
UltraFET™ |
Technology |
MOSFET (Metal Oxide) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
25mOhm @ 56A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
2000 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
56A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
130 nC @ 20 V |
Drain to Source Voltage (Vdss) |
100 V |
Vgs (Max) |
±20V |
HARRIS IRF520
In stock
Manufacturer |
HARRIS |
---|---|
Operating Temperature |
-55°C ~ 175°C (TJ) |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220AB |
Mfr |
Harris Corporation |
Package |
Bulk |
Power Dissipation (Max) |
60W (Tc) |
Product Status |
Active |
Mounting Type |
Through Hole |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs |
270mOhm @ 5.6A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
350 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
9.2A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
15 nC @ 10 V |
Drain to Source Voltage (Vdss) |
100 V |
Vgs (Max) |
±20V |
HARRIS IRF610
In stock
Manufacturer |
HARRIS |
---|---|
Product Status |
Active |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220AB |
Base Product Number |
IRF610 |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Harris Corporation |
Package |
Bulk |
Power Dissipation (Max) |
36W (Tc) |
Mounting Type |
Through Hole |
Technology |
MOSFET (Metal Oxide) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
1.5Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
140 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
3.3A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
8.2 nC @ 10 V |
Drain to Source Voltage (Vdss) |
200 V |
Vgs (Max) |
±20V |
HARRIS IRF710
In stock
Manufacturer |
HARRIS |
---|---|
Product Status |
Active |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220AB |
Base Product Number |
IRF710 |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Harris Corporation |
Package |
Bulk |
Power Dissipation (Max) |
36W (Tc) |
Mounting Type |
Through Hole |
Technology |
MOSFET (Metal Oxide) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
3.6Ohm @ 1.1A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
135 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
2A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
12 nC @ 10 V |
Drain to Source Voltage (Vdss) |
400 V |
Vgs (Max) |
±20V |