Showing 901–912 of 7598 results
HARRIS IRF9510
In stock
| Manufacturer |
HARRIS |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
Harris Corporation |
| Package |
Tube |
| Power Dissipation (Max) |
43W (Tc) |
| Product Status |
Obsolete |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
1.2Ohm @ 2.4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
200 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
4A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
8.7 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
100 V |
| Vgs (Max) |
±20V |
HARRIS IRFD310
In stock
| Manufacturer |
HARRIS |
|---|---|
| Product Status |
Active |
| Package / Case |
4-DIP (0.300, 7.62mm) |
| Supplier Device Package |
4-DIP, Hexdip, HVMDIP |
| Base Product Number |
IRFD310 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
Harris Corporation |
| Package |
Bulk |
| Power Dissipation (Max) |
1W (Ta) |
| Mounting Type |
Through Hole |
| Technology |
MOSFET (Metal Oxide) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.6Ohm @ 210mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
170 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
350mA (Ta) |
| Gate Charge (Qg) (Max) @ Vgs |
17 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
400 V |
| Vgs (Max) |
±20V |
HARRIS IRFP150
In stock
| Manufacturer |
HARRIS |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
Harris Corporation |
| Package |
Tube |
| Power Dissipation (Max) |
230W (Tc) |
| Product Status |
Obsolete |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
55mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
2800 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
41A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
140 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
100 V |
| Vgs (Max) |
±20V |
HARRIS IRFR420
In stock
| Manufacturer |
HARRIS |
|---|---|
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D-Pak |
| Base Product Number |
IRFR420 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
Harris Corporation |
| Package |
Bulk |
| Power Dissipation (Max) |
2.5W (Ta), 42W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3Ohm @ 1.4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
360 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
2.4A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
19 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
500 V |
| Vgs (Max) |
±20V |
HARRIS RF1S42N03L
In stock
| Manufacturer |
HARRIS |
|---|---|
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Supplier Device Package |
I2PAK (TO-262) |
| Drive Voltage (Max Rds On, Min Rds On) |
5V |
| Mfr |
Harris Corporation |
| Package |
Bulk |
| Power Dissipation (Max) |
90W (Tc) |
| Product Status |
Active |
| Mounting Type |
Through Hole |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs |
25mOhm @ 42A, 5V |
| Vgs(th) (Max) @ Id |
2V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
1650 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
42A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
60 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
30 V |
| Vgs (Max) |
±10V |
HARRIS RFP4N40
In stock
| Manufacturer |
HARRIS |
|---|---|
| Product Status |
Active |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
Harris Corporation |
| Package |
Bulk |
| Power Dissipation (Max) |
60W (Tc) |
| Mounting Type |
Through Hole |
| Technology |
MOSFET (Metal Oxide) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
750 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
4A (Tc) |
| Drain to Source Voltage (Vdss) |
400 V |
| Vgs (Max) |
±20V |
HARRIS RFP6N45
In stock
| Manufacturer |
HARRIS |
|---|---|
| Product Status |
Active |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
Harris Corporation |
| Package |
Bulk |
| Power Dissipation (Max) |
75W (Tc) |
| Mounting Type |
Through Hole |
| Technology |
MOSFET (Metal Oxide) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.25Ohm @ 3A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1500 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
6A (Tc) |
| Drain to Source Voltage (Vdss) |
450 V |
| Vgs (Max) |
±20V |
Honeywell Aerospace HTNFET-D
In stock
| Manufacturer |
Honeywell Aerospace |
|---|---|
| Series |
HTMOS™ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
8-CDIP Exposed Pad |
| Supplier Device Package |
8-CDIP-EP |
| Drive Voltage (Max Rds On, Min Rds On) |
5V |
| Power Dissipation (Max) |
50W Tj |
| Operating Temperature |
-55°C~225°C TJ |
| Packaging |
Bulk |
| Published |
2004 |
| Factory Lead Time |
8 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
400mOhm @ 100mA, 5V |
| Vgs(th) (Max) @ Id |
2.4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
290pF @ 28V |
| Gate Charge (Qg) (Max) @ Vgs |
4.3nC @ 5V |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
10V |
| Input Capacitance |
290pF |
| Rds On Max |
400 mΩ |
| RoHS Status |
Non-RoHS Compliant |
Honeywell Aerospace HTNFET-DC
In stock
| Manufacturer |
Honeywell Aerospace |
|---|---|
| Series |
HTMOS™ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
8-CDIP Exposed Pad |
| Drive Voltage (Max Rds On, Min Rds On) |
5V |
| Power Dissipation (Max) |
50W Tj |
| Packaging |
Bulk |
| Published |
2004 |
| Factory Lead Time |
8 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
400m Ω @ 100mA, 5V |
| Vgs(th) (Max) @ Id |
2.4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
290pF @ 28V |
| Gate Charge (Qg) (Max) @ Vgs |
4.3nC @ 5V |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
10V |
| RoHS Status |
RoHS Compliant |
Infineon AUIRF3808STRR
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Package Body Material |
PLASTIC/EPOXY |
| Number of Terminals |
2 |
| Transistor Element Material |
SILICON |
| Drain Current-Max (ID) |
106 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
AUIRF3808STRR |
| Moisture Sensitivity Level |
1 |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Surface Mount |
YES |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE |
| Part Life Cycle Code |
Obsolete |
| Reflow Temperature-Max (s) |
30 |
| Risk Rank |
5.14 |
| Rohs Code |
Yes |
| JESD-609 Code |
e3 |
| Operating Temperature-Max |
175 °C |
| Subcategory |
FET General Purpose Power |
| Transistor Application |
SWITCHING |
| Polarity/Channel Type |
N-CHANNEL |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| JEDEC-95 Code |
TO-263AB |
| Drain Current-Max (Abs) (ID) |
106 A |
| Drain-source On Resistance-Max |
0.007 Ω |
| Pulsed Drain Current-Max (IDM) |
550 A |
| DS Breakdown Voltage-Min |
75 V |
| Avalanche Energy Rating (Eas) |
430 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
200 W |
Infineon AUIRF6218STRR
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Surface Mount |
YES |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
AUIRF6218STRR |
| Operating Temperature-Max |
175 °C |
| Part Life Cycle Code |
Obsolete |
| Risk Rank |
5.12 |
| Rohs Code |
Yes |
| Subcategory |
Other Transistors |
| Reach Compliance Code |
compliant |
| Configuration |
Single |
| Polarity/Channel Type |
P-CHANNEL |
| Drain Current-Max (Abs) (ID) |
27 A |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
250 W |