Showing 925–936 of 7598 results
Infineon BF 1005S E6433
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Rohs Code |
Yes |
| Number of Pins |
4 |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
BF1005S-E6433 |
| Moisture Sensitivity Level |
1 |
| Operating Temperature-Max |
150 °C |
| Part Life Cycle Code |
Active |
| Current Rating |
25 mA |
| Surface Mount |
YES |
| Voltage Rating (DC) |
8 V |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Subcategory |
FET General Purpose Power |
| Max Power Dissipation |
200 mW |
| Reach Compliance Code |
compliant |
| Risk Rank |
5.76 |
| Frequency |
800 MHz |
| Drain Current-Max (Abs) (ID) |
0.025 A |
| Drain to Source Breakdown Voltage |
8 V |
| Power Dissipation |
200 mW |
| Drain to Source Voltage (Vdss) |
8 V |
| Polarity/Channel Type |
N-CHANNEL |
| Continuous Drain Current (ID) |
25 mA |
| Gate to Source Voltage (Vgs) |
3 V |
| Gain |
22 dB |
| Configuration |
Single |
| Operating Mode |
DUAL GATE, ENHANCEMENT MODE |
| Input Capacitance |
2.5 pF |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
0.2 W |
| Noise Figure |
1.6 dB |
| Test Voltage |
5 V |
| Voltage Rating |
8 V |
| Lead Free |
Lead Free |
Infineon BFR 360F H6765
In stock
| Manufacturer |
Infineon |
|---|---|
| Package Shape |
RECTANGULAR |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Brand |
Infineon Technologies |
| Factory Pack Quantity:Factory Pack Quantity |
6000 |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
BFR360FH6765 |
| Mfr |
ams OSRAM |
| Package |
Box |
| Package Body Material |
PLASTIC/EPOXY |
| Subcategory |
Transistors |
| Surface Mount |
YES |
| Package Style |
SMALL OUTLINE |
| Part Life Cycle Code |
Active |
| Product Status |
Obsolete |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.62 |
| Rohs Code |
Yes |
| Transition Frequency-Nom (fT) |
14000 MHz |
| Packaging |
Cut Tape |
| Type |
RF Bipolar Small Signal |
| Additional Feature |
LOW NOISE |
| Package Description |
SMALL OUTLINE, R-PDSO-F3 |
| Technology |
Si |
| Utilized IC / Part |
AS5163 |
| Supplied Contents |
Board(s) |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Reference Standard |
AEC-Q101 |
| JESD-30 Code |
R-PDSO-F3 |
| Number of Elements |
1 |
| Configuration |
SINGLE |
| Interface |
Analog and Digital |
| Transistor Application |
AMPLIFIER |
| Voltage - Supply |
4.5V ~ 5.5V |
| Terminal Position |
DUAL |
| Polarity/Channel Type |
NPN |
| Product Type |
RF Bipolar Transistors |
| Transistor Type |
Bipolar |
| Sensor Type |
Magnetic, Rotary Position |
| Collector Current-Max (IC) |
0.035 A |
| Embedded |
No |
| Sensing Range |
360° |
| Collector-Emitter Voltage-Max |
6 V |
| Highest Frequency Band |
S BAND |
| Collector-Base Capacitance-Max |
0.5 pF |
| Product Category |
RF Bipolar Transistors |
Infineon BSC014NE2LSI
In stock
| Manufacturer |
Infineon |
|---|---|
| Channel Mode |
Enhancement |
| Package / Case |
TDSON-8 |
| Surface Mount |
YES |
| Number of Terminals |
5 |
| Transistor Element Material |
SILICON |
| Mounting Style |
SMD/SMT |
| Brand |
Infineon Technologies |
| Moisture Sensitivity Level |
1 |
| Operating Temperature-Max |
150 °C |
| Continuous Drain Current Id |
100 |
| Factory Pack Quantity:Factory Pack Quantity |
5000 |
| Forward Transconductance - Min |
70 S |
| Id - Continuous Drain Current |
100 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
BSC014NE2LSI |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Unit Weight |
0.004174 oz |
| Factory Lead Time |
26 Weeks |
| Qualification |
AEC-Q101 |
| Package Description |
GREEN, PLASTIC, TDSON-8 |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE |
| Part Life Cycle Code |
Active |
| Pd - Power Dissipation |
74 W |
| Qg - Gate Charge |
52 nC |
| Package Body Material |
PLASTIC/EPOXY |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rds On - Drain-Source Resistance |
1.2 mOhms |
| Risk Rank |
1.61 |
| Rohs Code |
Yes |
| Tradename |
OptiMOS |
| Transistor Polarity |
N-Channel |
| Typical Turn-Off Delay Time |
25 ns |
| Typical Turn-On Delay Time |
5 ns |
| Drain Current-Max (ID) |
33 A |
| Vds - Drain-Source Breakdown Voltage |
25 V |
| Reach Compliance Code |
compliant |
| Terminal Form |
FLAT |
| Packaging |
MouseReel |
| Pbfree Code |
Yes |
| ECCN Code |
EAR99 |
| Subcategory |
MOSFETs |
| Technology |
Si |
| Terminal Position |
DUAL |
| Power Dissipation |
74 |
| Case Connection |
DRAIN |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-F5 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Configuration |
Single |
| Number of Channels |
1 Channel |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
1.2 V |
| Pulsed Drain Current-Max (IDM) |
400 A |
| Rise Time |
5 ns |
| Polarity/Channel Type |
N-CHANNEL |
| Product Type |
MOSFET |
| Transistor Type |
1 N-Channel |
| Drain Current-Max (Abs) (ID) |
100 A |
| Drain-source On Resistance-Max |
0.002 Ω |
| Transistor Application |
SWITCHING |
| Channel Type |
N |
| DS Breakdown Voltage-Min |
25 V |
| Avalanche Energy Rating (Eas) |
50 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
74 W |
| Product Category |
MOSFET |
| Height |
1.27 mm |
| Length |
5.9 mm |
| Width |
5.15 mm |
Infineon BSC0906NSE8189ATMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Package / Case |
8-PowerTDFN |
| Supplier Device Package |
PG-TDSON-8-34 |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
Infineon Technologies |
| Package |
Bulk |
| Power Dissipation (Max) |
2.5W (Ta), 30W (Tc) |
| Product Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Technology |
MOSFET (Metal Oxide) |
| Series |
OptiMOS™ |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.5mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
1200 pF @ 15 V |
| Current - Continuous Drain (Id) @ 25°C |
18A (Ta), 63A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
18 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
30 V |
| Vgs (Max) |
±20V |
Infineon BSC520N15NS3GXT
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Operating Temperature-Min |
-55 °C |
| Number of Terminals |
5 |
| Transistor Element Material |
SILICON |
| Continuous Drain Current Id |
21 |
| Drain Current-Max (ID) |
21 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
BSC520N15NS3GXT |
| ECCN Code |
EAR99 |
| Operating Temperature-Max |
150 °C |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
SMALL OUTLINE, R-PDSO-F5 |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE |
| Part Life Cycle Code |
Active |
| Risk Rank |
5.74 |
| Rohs Code |
Yes |
| Surface Mount |
YES |
| Factory Lead Time |
26 Weeks |
| Transistor Application |
SWITCHING |
| Terminal Position |
DUAL |
| Reach Compliance Code |
compliant |
| JESD-30 Code |
R-PDSO-F5 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Polarity/Channel Type |
N-CHANNEL |
| Drain-source On Resistance-Max |
0.052 Ω |
| Type |
Terminator |
| Pulsed Drain Current-Max (IDM) |
84 A |
| DS Breakdown Voltage-Min |
150 V |
| Channel Type |
N |
| Avalanche Energy Rating (Eas) |
60 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
57 W |
| Terminal Form |
FLAT |
| Product Length |
22.5 mm |
Infineon BSP125L6433
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Transistor Element Material |
SILICON |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Surface Mount |
YES |
| Number of Pins |
4 |
| Supplier Device Package |
PG-SOT223-4-21 |
| Number of Terminals |
4 |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
SMALL OUTLINE, R-PDSO-G4 |
| Continuous Drain Current (ID) |
120 mA |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
BSP125L6433 |
| Mfr |
Infineon Technologies |
| Moisture Sensitivity Level |
1 |
| Operating Temperature-Max |
150 °C |
| Package |
Bulk |
| Subcategory |
FET General Purpose Power |
| Mount |
Surface Mount, Through Hole |
| Voltage Rating (DC) |
600 V |
| Package Style |
SMALL OUTLINE |
| Part Life Cycle Code |
Obsolete |
| Power Dissipation (Max) |
1.8W (Ta) |
| Product Status |
Active |
| Risk Rank |
5.62 |
| Rohs Code |
Yes |
| Package Shape |
RECTANGULAR |
| Packaging |
Tape and Reel |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Series |
SIPMOS® |
| ECCN Code |
EAR99 |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| HTS Code |
8541.29.00.75 |
| Drain Current-Max (ID) |
0.12 A |
| Max Power Dissipation |
42 W |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Elements |
1 |
| Terminal Form |
GULL WING |
| Reach Compliance Code |
compliant |
| Current Rating |
120 mA |
| Pin Count |
4 |
| JESD-30 Code |
R-PDSO-G4 |
| Qualification Status |
Not Qualified |
| Gate Charge (Qg) (Max) @ Vgs |
6.6 nC @ 10 V |
| Rise Time |
14.4 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
1.8 W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
45Ohm @ 120mA, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 94µA |
| Input Capacitance (Ciss) (Max) @ Vds |
150 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
120mA (Ta) |
| Technology |
MOSFET (Metal Oxide) |
| Terminal Position |
DUAL |
| Drain to Source Breakdown Voltage |
600 V |
| Vgs (Max) |
±20V |
| Polarity/Channel Type |
N-CHANNEL |
| Turn-Off Delay Time |
20 ns |
| Gate to Source Voltage (Vgs) |
20 V |
| Drain Current-Max (Abs) (ID) |
0.12 A |
| Drain-source On Resistance-Max |
45 Ω |
| Drain to Source Voltage (Vdss) |
60 V |
| Input Capacitance |
420 pF |
| Pulsed Drain Current-Max (IDM) |
0.48 A |
| DS Breakdown Voltage-Min |
600 V |
| Channel Type |
N |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
1.8 W |
| Drain to Source Resistance |
45 Ω |
| Rds On Max |
300 mΩ |
| Lead Free |
Lead Free |
Infineon BSP135L6433
In stock
| Manufacturer |
Infineon |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Supplier Device Package |
PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) |
0V, 10V |
| Mfr |
Infineon Technologies |
| Package |
Bulk |
| Power Dissipation (Max) |
1.8W (Ta) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Series |
SIPMOS® |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
45Ohm @ 120mA, 10V |
| Vgs(th) (Max) @ Id |
1V @ 94µA |
| Input Capacitance (Ciss) (Max) @ Vds |
146 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
120mA (Ta) |
| Gate Charge (Qg) (Max) @ Vgs |
4.9 nC @ 5 V |
| Drain to Source Voltage (Vdss) |
600 V |
| Vgs (Max) |
±20V |
| FET Feature |
Depletion Mode |
Infineon BUZ73ALH
In stock
| Manufacturer |
Eurotherm |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Drain Current-Max (ID) |
5.5 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
BUZ73ALH |
| Operating Temperature-Max |
150 °C |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
GREEN, PLASTIC, TO-220, 3 PIN |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Part Package Code |
TO-220AB |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Part Life Cycle Code |
Obsolete |
| Risk Rank |
5.25 |
| Rohs Code |
Yes |
| Turn-On Delay Time |
15 ns |
| Pbfree Code |
Yes |
| ECCN Code |
EAR99 |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Subcategory |
FET General Purpose Power |
| Max Power Dissipation |
40 W |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Number of Pins |
3 |
| Surface Mount |
NO |
| Continuous Drain Current (ID) |
5.5 A |
| JEDEC-95 Code |
TO-220AB |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
40 W |
| Halogen Free |
Halogen Free |
| Rise Time |
60 ns |
| Drain to Source Voltage (Vdss) |
200 V |
| Polarity/Channel Type |
N-CHANNEL |
| Turn-Off Delay Time |
100 ns |
| Pin Count |
3 |
| Reach Compliance Code |
compliant |
| Gate to Source Voltage (Vgs) |
20 V |
| Drain-source On Resistance-Max |
0.6 Ω |
| Drain to Source Breakdown Voltage |
200 V |
| Pulsed Drain Current-Max (IDM) |
22 A |
| Input Capacitance |
840 pF |
| DS Breakdown Voltage-Min |
200 V |
| Avalanche Energy Rating (Eas) |
120 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
40 W |
| Drain to Source Resistance |
600 mΩ |
| Rds On Max |
600 mΩ |
| JESD-30 Code |
R-PSFM-T3 |
| Radiation Hardening |
No |
Infineon IAUC120N06S5L022ATMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Package / Case |
8-PowerTDFN |
| Supplier Device Package |
PG-TDSON-8-34 |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
Infineon Technologies |
| Package |
Tape & Reel (TR) |
| Power Dissipation (Max) |
136W (Tc) |
| Product Status |
Active |
| Mounting Type |
Surface Mount |
| Technology |
MOSFET (Metal Oxide) |
| Series |
OptiMOS™-5 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.2mOhm @ 60A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 65µA |
| Input Capacitance (Ciss) (Max) @ Vds |
5651 pF @ 30 V |
| Current - Continuous Drain (Id) @ 25°C |
170A (Tj) |
| Gate Charge (Qg) (Max) @ Vgs |
77 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
60 V |
| Vgs (Max) |
±20V |
Infineon IMT65R072M1HXTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Base Product Number |
IMT65R |
| Brand |
Infineon Technologies |
| Factory Pack Quantity:Factory Pack Quantity |
2000 |
| Mfr |
Infineon Technologies |
| Package |
Tape & Reel (TR) |
| Part # Aliases |
IMT65R072M1H SP005551141 |
| Product Status |
Active |
| Packaging |
Reel |
| Series |
* |
| Subcategory |
MOSFETs |
| Product Type |
MOSFET |
| Product Category |
MOSFET |
Infineon IMT65R107M1HXTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Product Status |
Active |
| Contact Plating |
Tin |
| Base Product Number |
IMT65R |
| Base/Housing Material |
Thermoplastic |
| Body Orientation |
Straight |
| Brand |
Infineon Technologies |
| Factory Pack Quantity:Factory Pack Quantity |
2000 |
| Mfr |
Infineon Technologies |
| Mounting |
Through Hole |
| Package |
Tape & Reel (TR) |
| Part # Aliases |
IMT65R107M1H SP005551144 |
| Contact Material |
Brass/Steel |
| Wire Size |
24 to 16, 24 AWG |
| Termination Method |
Solder |
| Operating Temperature |
-40 to 115 °C |
| Packaging |
Reel |
| Series |
* |
| Type |
Terminal Block |
| Number of Rows |
1 |
| Subcategory |
MOSFETs |
| Pitch |
3.8100 mm |
| Housing Color |
Green |
| Product Type |
MOSFET |
| Product Category |
MOSFET |
| Product Length |
8.02 mm |