Showing 937–948 of 7598 results
Infineon IMT65R163M1HXTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Base Product Number |
IMT65R |
| Brand |
Infineon Technologies |
| Factory Pack Quantity:Factory Pack Quantity |
2000 |
| Mfr |
Infineon Technologies |
| Package |
Tape & Reel (TR) |
| Part # Aliases |
IMT65R163M1H SP005551146 |
| Product Status |
Active |
| Packaging |
Reel |
| Series |
* |
| Subcategory |
MOSFETs |
| Product Type |
MOSFET |
| Product Category |
MOSFET |
Infineon IMT65R260M1HXTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Product Status |
Active |
| Contact Plating |
Gold |
| Base Product Number |
IMT65R |
| Brand |
Infineon Technologies |
| Factory Pack Quantity:Factory Pack Quantity |
2000 |
| Mfr |
Infineon Technologies |
| Package |
Tape & Reel (TR) |
| Part # Aliases |
IMT65R260M1H SP005551147 |
| Contact Material |
Beryllium Copper |
| Wire Size |
26 AWG |
| Termination Method |
Crimp |
| Operating Temperature |
-55 to 150 °C |
| Packaging |
Reel |
| Series |
* |
| Gender |
Pin |
| Subcategory |
MOSFETs |
| Cable Length |
1.82 m |
| Product Type |
MOSFET |
| Product Category |
MOSFET |
Infineon IPB035N08N3GXT
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Package Body Material |
PLASTIC/EPOXY |
| Number of Terminals |
2 |
| Transistor Element Material |
SILICON |
| Continuous Drain Current Id |
100 |
| Drain Current-Max (ID) |
100 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
IPB035N08N3GXT |
| Pbfree Code |
Yes |
| Operating Temperature-Max |
175 °C |
| Package Description |
SMALL OUTLINE, R-PSSO-G2 |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE |
| Part Life Cycle Code |
Active |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.76 |
| Rohs Code |
Yes |
| Surface Mount |
YES |
| Factory Lead Time |
18 Weeks |
| Case Connection |
DRAIN |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Transistor Application |
SWITCHING |
| Polarity/Channel Type |
N-CHANNEL |
| ECCN Code |
EAR99 |
| JEDEC-95 Code |
TO-263AB |
| Drain-source On Resistance-Max |
0.0035 Ω |
| Pulsed Drain Current-Max (IDM) |
400 A |
| DS Breakdown Voltage-Min |
80 V |
| Channel Type |
N |
| Avalanche Energy Rating (Eas) |
510 mJ |
| Terminal Form |
GULL WING |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
Infineon IPDQ60R017S7AXTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Package / Case |
PG-HDSOP-22 |
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
30 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 40 C |
| Pd - Power Dissipation |
500 W |
| Qg - Gate Charge |
196 nC |
| Rds On - Drain-Source Resistance |
17 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
600 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
4.5 V |
| Technology |
Si |
| Number of Channels |
1 Channel |
Infineon IPDQ60R017S7XTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Package / Case |
PG-HDSOP-22 |
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
30 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 40 C |
| Pd - Power Dissipation |
500 W |
| Qg - Gate Charge |
196 nC |
| Rds On - Drain-Source Resistance |
17 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
600 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
4.5 V |
| Technology |
Si |
| Number of Channels |
1 Channel |
Infineon IPDQ60R040S7AXTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Package / Case |
PG-HDSOP-22 |
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
14 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 40 C |
| Pd - Power Dissipation |
272 W |
| Qg - Gate Charge |
83 nC |
| Rds On - Drain-Source Resistance |
40 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
600 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
4.5 V |
| Technology |
Si |
| Number of Channels |
1 Channel |
Infineon IPP90N06S4-04
In stock
| Manufacturer |
Infineon |
|---|---|
| Package Body Material |
PLASTIC/EPOXY |
| Surface Mount |
NO |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Mounting Style |
Through Hole |
| Brand |
Infineon Technologies |
| Channel Mode |
Enhancement |
| Drain Current-Max (ID) |
90 A |
| Package Description |
GREEN, PLASTIC, TO-220, 3 PIN |
| Id - Continuous Drain Current |
90 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
IPP90N06S4-04 |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Moisture Sensitivity Level |
1 |
| Operating Temperature-Max |
175 °C |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Package / Case |
TO-220-3 |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Part # Aliases |
SP000379634 IPP90N06S404AKSA1 |
| Part Life Cycle Code |
Obsolete |
| Part Package Code |
TO-220AB |
| Pd - Power Dissipation |
150 W |
| Qg - Gate Charge |
99 nC |
| Rds On - Drain-Source Resistance |
3.7 mOhms |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
8.62 |
| Rohs Code |
Yes |
| Tradename |
OptiMOS |
| Transistor Polarity |
N-Channel |
| Unit Weight |
0.068784 oz |
| Vds - Drain-Source Breakdown Voltage |
60 V |
| Factory Pack Quantity:Factory Pack Quantity |
500 |
| Vgs th - Gate-Source Threshold Voltage |
4 V |
| Terminal Form |
THROUGH-HOLE |
| Number of Channels |
1 Channel |
| JESD-609 Code |
e3 |
| Pbfree Code |
Yes |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN |
| Subcategory |
MOSFETs |
| Technology |
Si |
| Terminal Position |
SINGLE |
| Operating Mode |
ENHANCEMENT MODE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Configuration |
Single |
| Packaging |
Tube |
| Series |
OptiMOS-T2 |
| Case Connection |
DRAIN |
| Polarity/Channel Type |
N-CHANNEL |
| Product Type |
MOSFET |
| Transistor Type |
1 N-Channel |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
90 A |
| Drain-source On Resistance-Max |
0.004 Ω |
| Pulsed Drain Current-Max (IDM) |
360 A |
| DS Breakdown Voltage-Min |
60 V |
| Avalanche Energy Rating (Eas) |
331 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
150 W |
| Product Category |
MOSFET |
| Height |
15.65 mm |
| Length |
10 mm |
| Width |
4.4 mm |
Infineon IPQC60R010S7AXTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Package / Case |
PG-HDSOP-22 |
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
50 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 40 C |
| Pd - Power Dissipation |
694 W |
| Qg - Gate Charge |
318 nC |
| Rds On - Drain-Source Resistance |
10 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
600 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
4.5 V |
| Technology |
Si |
| Number of Channels |
1 Channel |