Showing 949–960 of 7598 results
Infineon IPQC60R017S7XTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Package / Case |
PG-HDSOP-22 |
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
30 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 40 C |
| Pd - Power Dissipation |
500 W |
| Qg - Gate Charge |
196 nC |
| Rds On - Drain-Source Resistance |
17 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
600 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
4.5 V |
| Series |
S7 |
| Technology |
Si |
| Number of Channels |
1 Channel |
Infineon IPW65R099C6
In stock
| Manufacturer |
Infineon |
|---|---|
| Vds - Drain-Source Breakdown Voltage |
650 V |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Mounting Style |
Through Hole |
| Brand |
Infineon Technologies |
| Channel Mode |
Enhancement |
| Factory Pack Quantity:Factory Pack Quantity |
240 |
| Id - Continuous Drain Current |
38 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
IPW65R099C6 |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Package Description |
FLANGE MOUNT, R-PSFM-T3 |
| Part Life Cycle Code |
Not Recommended |
| Part Package Code |
TO-247 |
| Pd - Power Dissipation |
278 W |
| Qg - Gate Charge |
127 nC |
| Rds On - Drain-Source Resistance |
89 mOhms |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
8.5 |
| Rohs Code |
Yes |
| Tradename |
CoolMOS |
| Transistor Polarity |
N-Channel |
| Typical Turn-Off Delay Time |
77 ns |
| Typical Turn-On Delay Time |
10.6 ns |
| Unit Weight |
0.211644 oz |
| Surface Mount |
NO |
| Package / Case |
TO-247-3 |
| Operating Mode |
ENHANCEMENT MODE |
| Transistor Application |
SWITCHING |
| Series |
CoolMOS C6 |
| Pbfree Code |
Yes |
| Subcategory |
MOSFETs |
| Technology |
Si |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Number of Elements |
1 |
| Configuration |
Single |
| Number of Channels |
1 Channel |
| Vgs th - Gate-Source Threshold Voltage |
2.5 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Rise Time |
9 ns |
| Polarity/Channel Type |
N-CHANNEL |
| Product Type |
MOSFET |
| Transistor Type |
1 N-Channel |
| JEDEC-95 Code |
TO-247 |
| Drain-source On Resistance-Max |
0.099 Ω |
| Pulsed Drain Current-Max (IDM) |
115 A |
| DS Breakdown Voltage-Min |
650 V |
| Avalanche Energy Rating (Eas) |
845 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Product Category |
MOSFET |
| Height |
21.1 mm |
| Length |
16.13 mm |
| Packaging |
Tube |
| Width |
5.21 mm |
Infineon IQE022N06LM5CGATMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Maximum Operating Temperature |
+ 175 C |
| Mounting Style |
SMD/SMT |
| 1st Connector Mounting Type |
Free Hanging (In-Line) |
| Cable Material |
Polyurethane (PUR) |
| Base Product Number |
IQE022 |
| Brand |
Infineon Technologies |
| Channel Mode |
Enhancement |
| Factory Pack Quantity:Factory Pack Quantity |
5000 |
| Transistor Polarity |
N-Channel |
| Package / Case |
PG-TTFN-9 |
| Mfr |
ifm efector, inc. |
| Minimum Operating Temperature |
– 55 C |
| Package |
Box |
| Pd - Power Dissipation |
100 W |
| Product Status |
Active |
| Qg - Gate Charge |
53 nC |
| Rds On - Drain-Source Resistance |
2.2 mOhms |
| Id - Continuous Drain Current |
151 A |
| Vds - Drain-Source Breakdown Voltage |
60 V |
| 1st Connector Gender |
Female Sockets |
| 1st Connector Number of Positions Loaded |
All |
| Packaging |
Reel |
| Color |
Black |
| Technology |
Si |
| Shielding |
Unshielded |
| Number of Channels |
1 Channel |
| Cable Type |
Round |
| Usage |
Industrial Environments |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
2.3 V |
| 1st Connector Type |
Plug |
| 1st Connector Number of Positions |
5 |
| Assembly Configuration |
Standard |
| 2nd Connector Type |
Wire Leads |
| 1st Connector Orientation |
A |
| 1st Connector Shell Size - Insert |
M12 |
| Product Category |
Infineon |
| Length |
49.2 (15.00m) |
Infineon IRF60DM206ATMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Continuous Drain Current Id |
130A |
| Id - Continuous Drain Current |
130 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Qg - Gate Charge |
133 nC |
| Rds On - Drain-Source Resistance |
2.9 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
60 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
3.7 V |
| Technology |
Si |
| Number of Channels |
1 Channel |
| Power Dissipation |
96W |
| Channel Type |
N Channel |
Infineon IRF7821TRPBFXTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Package / Case |
SO-8 |
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
13.6 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
2.5 W |
| Qg - Gate Charge |
9.3 nC |
| Rds On - Drain-Source Resistance |
9.1 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
30 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
1 V |
| Technology |
Si |
| Number of Channels |
1 Channel |
Infineon IRF8714TRPBF-1
In stock
| Manufacturer |
Infineon |
|---|---|
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Supplier Device Package |
8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
Infineon Technologies |
| Package |
Tape & Reel (TR) |
| Power Dissipation (Max) |
2.5W (Ta) |
| Product Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Technology |
MOSFET (Metal Oxide) |
| Series |
HEXFET® |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.7mOhm @ 14A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25µA |
| Input Capacitance (Ciss) (Max) @ Vds |
1020 pF @ 15 V |
| Current - Continuous Drain (Id) @ 25°C |
14A (Ta) |
| Gate Charge (Qg) (Max) @ Vgs |
12 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) |
30 V |
| Vgs (Max) |
±20V |
Infineon IRFC4568EB
In stock
| Manufacturer |
Infineon |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Supplier Device Package |
Die |
| Mfr |
Infineon Technologies |
| Package |
Bulk |
| Product Status |
Obsolete |
| Series |
HEXFET® |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Current - Continuous Drain (Id) @ 25°C |
171A (Ta) |
| Drain to Source Voltage (Vdss) |
150 V |