Showing 973–984 of 7598 results
Infineon SPA06N60C3
In stock
| Manufacturer |
Infineon |
|---|---|
| Power Dissipation |
32W |
| Number of Pins |
3 |
| Number of Elements |
1 |
| Power Dissipation (Max) |
32W |
| Turn Off Delay Time |
52 ns |
| Pbfree Code |
yes |
| Number of Terminations |
3 |
| Max Operating Temperature |
150°C |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
650V |
| Min Operating Temperature |
-55°C |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
6.2A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Surface Mount |
NO |
| Package / Case |
TO-220-3 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
650V |
| Transistor Application |
SWITCHING |
| Halogen Free |
Halogen Free |
| Rise Time |
12ns |
| Drain to Source Voltage (Vdss) |
650V |
| Polarity/Channel Type |
N-CHANNEL |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
6.2A |
| JEDEC-95 Code |
TO-220AB |
| Turn On Delay Time |
7 ns |
| Case Connection |
ISOLATED |
| Pulsed Drain Current-Max (IDM) |
18.6A |
| Avalanche Energy Rating (Eas) |
200 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance |
750mOhm |
| Rds On Max |
750 mΩ |
| Capacitance - Input |
620pF |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Voltage - Threshold |
3V |
| Lead Free |
Lead Free |
Infineon Technologies 2N7002H6327XTSA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2012 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Number of Channels |
1 |
| Factory Lead Time |
10 Weeks |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
60V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
115mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Part Status |
Active |
| Power Dissipation-Max |
500mW Ta |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Power Dissipation |
200mW |
| Turn On Delay Time |
3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
20pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
300mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
0.6nC @ 10V |
| Rise Time |
3.3ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn-Off Delay Time |
5.5 ns |
| Continuous Drain Current (ID) |
300mA |
| Threshold Voltage |
2.1V |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
3Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.1mm |
| Length |
2.9mm |
| Width |
1.3mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies 62-0095PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2016 |
| Package / Case |
SOIC |
| Current - Continuous Drain (Id) @ 25℃ |
10A Ta 12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
2W |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
13.4mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2.55V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
900pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies 62-0136PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
SOIC |
| Current - Continuous Drain (Id) @ 25℃ |
19A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
2.5W |
| Operating Temperature |
-55°C~150°C TA |
| Packaging |
Tube |
| Published |
2016 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.5mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id |
2.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3710pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies 64-9145
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric MX |
| Supplier Device Package |
DIRECTFET™ MX |
| Current - Continuous Drain (Id) @ 25℃ |
27A Ta 150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.7mOhm @ 27A, 10V |
| Vgs(th) (Max) @ Id |
2.45V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4130pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
150A |
| Input Capacitance |
4.13nF |
| Rds On Max |
2.7 mΩ |
| RoHS Status |
Non-RoHS Compliant |