Showing 985–996 of 7598 results
Infineon Technologies 94-2311PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mount |
Surface Mount |
| Package / Case |
TO-263-3 |
| Published |
2004 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.8W |
| Drain to Source Voltage (Vdss) |
100V |
| Continuous Drain Current (ID) |
36A |
| Input Capacitance |
1.8nF |
| Rds On Max |
44 mΩ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies AUIRF1010EZS
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
38 ns |
| Packaging |
Tube |
| Published |
2010 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Contact Plating |
Tin |
| Factory Lead Time |
16 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
54 ns |
| Power Dissipation |
140W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.5m Ω @ 51A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2810pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
86nC @ 10V |
| Rise Time |
90ns |
| Element Configuration |
Single |
| JESD-30 Code |
R-PDSO-G2 |
| Continuous Drain Current (ID) |
75A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0085Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF1324STRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
83 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2010 |
| Series |
HEXFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Fall Time (Typ) |
120 ns |
| Continuous Drain Current (ID) |
195A |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.65m Ω @ 195A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7590pF @ 24V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
190ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.00165Ohm |
| Drain to Source Breakdown Voltage |
24V |
| Pulsed Drain Current-Max (IDM) |
1420A |
| Avalanche Energy Rating (Eas) |
270 mJ |
| Height |
4.572mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| Power Dissipation |
300W |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF1324STRL7P
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
340A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
Automotive, AEC-Q101, HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.65m Ω @ 195A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7590pF @ 24V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Drain to Source Voltage (Vdss) |
24V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
340A |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF1324WL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
75 ns |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-262-3 Wide Leads |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Factory Lead Time |
16 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2011 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
300W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
240A |
| Threshold Voltage |
2V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.3m Ω @ 195A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7630pF @ 19V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
200ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
110 ns |
| Power Dissipation |
300W |
| Turn On Delay Time |
18 ns |
| JEDEC-95 Code |
TO-262AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
24V |
| Nominal Vgs |
2 V |
| Height |
11.3mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF1404
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
333W Tc |
| Turn Off Delay Time |
46 ns |
| Case Connection |
DRAIN |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2007 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
333W |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| JEDEC-95 Code |
TO-220AB |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4m Ω @ 121A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5669pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
196nC @ 10V |
| Rise Time |
190ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
33 ns |
| Continuous Drain Current (ID) |
160A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.004Ohm |
| Turn On Delay Time |
17 ns |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
808A |
| Avalanche Energy Rating (Eas) |
620 mJ |
| Nominal Vgs |
2 V |
| Height |
16.51mm |
| Length |
10.66mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Transistor Application |
SWITCHING |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF1404ZS
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
36 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2010 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Contact Plating |
Tin |
| Factory Lead Time |
16 Weeks |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.7m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4340pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Rise Time |
110ns |
| Fall Time (Typ) |
58 ns |
| Continuous Drain Current (ID) |
160A |
| Element Configuration |
Single |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Avalanche Energy Rating (Eas) |
480 mJ |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Power Dissipation |
200W |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF1404ZSTRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
36 ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
16 Weeks |
| Published |
2010 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
110ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
200W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.7m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4340pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
58 ns |
| Continuous Drain Current (ID) |
160A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Avalanche Energy Rating (Eas) |
480 mJ |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF1405ZS-7TRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
230W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.9m Ω @ 88A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5360pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF2804STRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
130 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Contact Plating |
Tin |
| Factory Lead Time |
16 Weeks |
| Continuous Drain Current (ID) |
195A |
| Threshold Voltage |
2V |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6450pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
120ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
130 ns |
| Power Dissipation |
300W |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
270A |
| Drain to Source Breakdown Voltage |
40V |
| Avalanche Energy Rating (Eas) |
540 mJ |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |