Showing 997–1008 of 7598 results
Infineon Technologies AUIRF2804STRL7P
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
330W Tc |
| Terminal Form |
GULL WING |
| Factory Lead Time |
16 Weeks |
| Published |
2010 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6930pF @ 25V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.6m Ω @ 160A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G6 |
| Gate Charge (Qg) (Max) @ Vgs |
260nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
240A |
| Drain-source On Resistance-Max |
0.0016Ohm |
| Pulsed Drain Current-Max (IDM) |
1360A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
1050 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF2804WL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
71 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-262-3 Wide Leads |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Fall Time (Typ) |
100 ns |
| Turn On Delay Time |
19 ns |
| Rds On (Max) @ Id, Vgs |
1.8m Ω @ 187A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7978pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
225nC @ 10V |
| Rise Time |
241ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
295A |
| Gate to Source Voltage (Vgs) |
20V |
| Power Dissipation |
300W |
| Drain Current-Max (Abs) (ID) |
240A |
| Drain to Source Breakdown Voltage |
40V |
| Height |
9.65mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF2903ZL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
231W Tc |
| Turn Off Delay Time |
48 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
13 Weeks |
| Published |
2007 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation |
231W |
| Continuous Drain Current (ID) |
160A |
| Threshold Voltage |
2V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6320pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
100ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
37 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
24 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0024Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Nominal Vgs |
2 V |
| Height |
9.65mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies AUIRF2903ZS
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
231W Tc |
| Turn Off Delay Time |
48 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2010 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Contact Plating |
Tin |
| Factory Lead Time |
16 Weeks |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
24 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6320pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
100ns |
| Fall Time (Typ) |
37 ns |
| Continuous Drain Current (ID) |
160A |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0024Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Nominal Vgs |
2 V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Power Dissipation |
231W |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF2903ZSTRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
231W Tc |
| Turn Off Delay Time |
48 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2013 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
6320pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
231W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
24 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
100ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
37 ns |
| Continuous Drain Current (ID) |
160A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0024Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
1020A |
| Radiation Hardening |
No |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF3004WL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Surface Mount, Through Hole |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-262-3 Wide Leads |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
90 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
375W Tc |
| Packaging |
Tube |
| Published |
2011 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Factory Lead Time |
16 Weeks |
| Threshold Voltage |
2V |
| JEDEC-95 Code |
TO-262AA |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.4m Ω @ 195A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9450pF @ 32V |
| Gate Charge (Qg) (Max) @ Vgs |
210nC @ 10V |
| Rise Time |
220ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
130 ns |
| Continuous Drain Current (ID) |
240A |
| Turn On Delay Time |
19 ns |
| Power Dissipation |
375W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Avalanche Energy Rating (Eas) |
470 mJ |
| Nominal Vgs |
2 V |
| Height |
11.3mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF3007
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Turn Off Delay Time |
55 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
200W Tc |
| Packaging |
Tube |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Fall Time (Typ) |
49 ns |
| Continuous Drain Current (ID) |
75A |
| Rds On (Max) @ Id, Vgs |
12.6m Ω @ 48A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3270pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Rise Time |
80ns |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
12 ns |
| Power Dissipation |
200W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
75V |
| Height |
9.02mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| FET Type |
N-Channel |
| RoHS Status |
RoHS Compliant |
Infineon Technologies AUIRF3205ZS
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
170W Tc |
| Turn Off Delay Time |
45 ns |
| Element Configuration |
Single |
| Factory Lead Time |
16 Weeks |
| Published |
2010 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Temperature |
-55°C~175°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
110A |
| Threshold Voltage |
2V |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.5m Ω @ 66A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3450pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
95ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
67 ns |
| Power Dissipation |
170W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain-source On Resistance-Max |
0.0065Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
440A |
| Avalanche Energy Rating (Eas) |
250 mJ |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
11.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF3415
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Case Connection |
DRAIN |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
43A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
71 ns |
| Published |
2011 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200W |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
42m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
55ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
69 ns |
| Continuous Drain Current (ID) |
43A |
| Threshold Voltage |
2V |
| FET Type |
N-Channel |
| Turn On Delay Time |
12 ns |
| Drain-source On Resistance-Max |
0.042Ohm |
| Drain to Source Breakdown Voltage |
150V |
| Avalanche Energy Rating (Eas) |
590 mJ |
| Nominal Vgs |
2 V |
| Height |
16.51mm |
| Length |
10.66mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Transistor Application |
SWITCHING |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF3710Z
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
59A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Power Dissipation |
160W |
| Factory Lead Time |
13 Weeks |
| Packaging |
Tube |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn Off Delay Time |
41 ns |
| Turn On Delay Time |
17 ns |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
18m Ω @ 35A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Rise Time |
77ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
56 ns |
| Continuous Drain Current (ID) |
59A |
| Threshold Voltage |
2V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Nominal Vgs |
2 V |
| Height |
9.017mm |
| Length |
10.6426mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies AUIRF3710ZSTRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-XSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
59A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Turn Off Delay Time |
41 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Fall Time (Typ) |
56 ns |
| Continuous Drain Current (ID) |
59A |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
18m Ω @ 35A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Rise Time |
77ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.018Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| Power Dissipation |
160W |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF3805L-7P
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-262-7 |
| Number of Pins |
7 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
80 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mount |
Through Hole |
| Published |
2010 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
7 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
52 ns |
| Continuous Drain Current (ID) |
240A |
| Turn On Delay Time |
23 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.6m Ω @ 140A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7820pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
130ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
55V |
| Avalanche Energy Rating (Eas) |
680 mJ |
| Height |
11.3mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |