Showing 1045–1056 of 7598 results
Infineon Technologies AUIRFS8409-7TRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
375W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
IRFS8409 |
| Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
0.75m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
13975pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
460nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
240A |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRFS8409TRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
375W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
IRFS8409 |
| Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.2m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
14240pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
450nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
195A |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRFSL8403
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
TO-262 |
| Current - Continuous Drain (Id) @ 25℃ |
123A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
99W Tc |
| Power Dissipation |
99W |
| Factory Lead Time |
16 Weeks |
| Packaging |
Tube |
| Published |
2013 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Turn Off Delay Time |
26 ns |
| Turn On Delay Time |
10 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
3.183nF |
| Vgs(th) (Max) @ Id |
3.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3183pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
93nC @ 10V |
| Rise Time |
77ns |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
43 ns |
| Continuous Drain Current (ID) |
123A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.3mOhm @ 70A, 10V |
| Drain to Source Resistance |
3.3mOhm |
| Rds On Max |
3.3 mΩ |
| Nominal Vgs |
3 V |
| Height |
9.65mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies AUIRFSL8409
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
160 ns |
| Mount |
Surface Mount, Through Hole |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-262-3 Short Leads, I2Pak |
| Number of Pins |
3 |
| Supplier Device Package |
TO-262 |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Min Operating Temperature |
-55°C |
| Factory Lead Time |
16 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Power Dissipation (Max) |
375W Tc |
| Number of Channels |
1 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
100 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.2mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
14240pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
450nC @ 10V |
| Rise Time |
105ns |
| Drain to Source Voltage (Vdss) |
40V |
| Element Configuration |
Single |
| Turn On Delay Time |
32 ns |
| Continuous Drain Current (ID) |
195A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Input Capacitance |
14.24nF |
| Drain to Source Resistance |
1.2mOhm |
| Rds On Max |
1.2 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRFU540Z
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
43 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
I-PAK |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Min Operating Temperature |
-55°C |
| Factory Lead Time |
13 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
HEXFET® |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Power Dissipation (Max) |
91W Tc |
| Power Dissipation |
91W |
| Fall Time (Typ) |
34 ns |
| Continuous Drain Current (ID) |
35A |
| Rds On (Max) @ Id, Vgs |
28.5mOhm @ 21A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1690pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
59nC @ 10V |
| Rise Time |
42ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance |
1.69nF |
| Drain to Source Resistance |
22.5mOhm |
| Rds On Max |
28.5 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies AUIRFU8405
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
12 ns |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
163W Tc |
| Turn Off Delay Time |
51 ns |
| Packaging |
Tube |
| Published |
2013 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Power Dissipation |
163W |
| Mount |
Surface Mount, Through Hole |
| Factory Lead Time |
26 Weeks |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Input Capacitance (Ciss) (Max) @ Vds |
5171pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
155nC @ 10V |
| Rise Time |
80ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
51 ns |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
3V |
| Rds On (Max) @ Id, Vgs |
1.98m Ω @ 90A, 10V |
| FET Type |
N-Channel |
| Nominal Vgs |
3 V |
| Height |
6.22mm |
| Length |
6.73mm |
| Width |
2.39mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Vgs(th) (Max) @ Id |
3.9V @ 100μA |
| Lead Free |
Lead Free |
Infineon Technologies AUIRFZ24NSTRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2015 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 45W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
370pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
70m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Drain to Source Voltage (Vdss) |
55V |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-263AB |
| Drain Current-Max (Abs) (ID) |
17A |
| Drain-source On Resistance-Max |
0.07Ohm |
| Pulsed Drain Current-Max (IDM) |
68A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
71 mJ |
| JESD-30 Code |
R-PDSO-G2 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRFZ44N
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
47 ns |
| Mount |
Surface Mount, Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
49A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation (Max) |
94W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2007 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Factory Lead Time |
8 Weeks |
| Fall Time (Typ) |
60 ns |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
17.5m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1470pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
63nC @ 10V |
| Rise Time |
69ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
49A |
| Threshold Voltage |
2V |
| Power Dissipation |
45W |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
55V |
| Height |
16.51mm |
| Length |
10.66mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Turn On Delay Time |
7.3 ns |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRFZ44VZS
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
57A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
92W Tc |
| Turn Off Delay Time |
35 ns |
| Packaging |
Tube |
| Published |
2011 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Contact Plating |
Tin |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
38 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 34A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1690pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Rise Time |
62ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
57A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Power Dissipation |
92W |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRL1404ZL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
200W |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
30 ns |
| Packaging |
Tube |
| Published |
2005 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
5.9MOhm |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Threshold Voltage |
1.4V |
| Gate to Source Voltage (Vgs) |
16V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.1m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
2.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5080pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 5V |
| Rise Time |
180ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
49 ns |
| Continuous Drain Current (ID) |
160A |
| Turn On Delay Time |
19 ns |
| Case Connection |
DRAIN |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
790A |
| Avalanche Energy Rating (Eas) |
490 mJ |
| Height |
9.65mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies AUIRL7736M2TR
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
56 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric M4 |
| Number of Pins |
9 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
179A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Factory Lead Time |
16 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Position |
BOTTOM |
| JESD-30 Code |
R-XBCC-N5 |
| Power Dissipation (Max) |
2.5W Ta 63W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
76 ns |
| Turn On Delay Time |
48 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 67A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5055pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
78nC @ 4.5V |
| Rise Time |
210ns |
| Power Dissipation |
63W |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
179A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
22A |
| Drain-source On Resistance-Max |
0.003Ohm |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
450A |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRLR024NTRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2015 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
13 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
480pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
65m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 5V |
| Drain to Source Voltage (Vdss) |
55V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±16V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
17A |
| Drain-source On Resistance-Max |
0.08Ohm |
| Pulsed Drain Current-Max (IDM) |
72A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
68 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |