Showing 1069–1080 of 7598 results
Transistors - FETs/MOSFETs - Single
Infineon Technologies AUIRLZ24NS
In stock
Manufacturer |
Infineon Technologies |
---|---|
Factory Lead Time |
13 Weeks |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
Power Dissipation (Max) |
3.8W Ta 45W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2015 |
Series |
HEXFET® |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
60m Ω @ 11A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
480pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
15nC @ 5V |
Drain to Source Voltage (Vdss) |
55V |
Vgs (Max) |
±16V |
Continuous Drain Current (ID) |
18A |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRLZ44ZL
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-220AB |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Max Power Dissipation |
80W |
Factory Lead Time |
13 Weeks |
Packaging |
Tube |
Published |
2003 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Turn Off Delay Time |
25 ns |
Element Configuration |
Single |
Gate to Source Voltage (Vgs) |
16V |
Drain to Source Breakdown Voltage |
55V |
Rise Time |
160ns |
Drain to Source Voltage (Vdss) |
55V |
Vgs (Max) |
±16V |
Fall Time (Typ) |
42 ns |
Continuous Drain Current (ID) |
51A |
Threshold Voltage |
1V |
Power Dissipation |
80W |
Turn On Delay Time |
14 ns |
Input Capacitance |
1.62nF |
Drain to Source Resistance |
13.5mOhm |
Height |
9.65mm |
Length |
10.67mm |
Width |
4.83mm |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Infineon Technologies AUIRLZ44ZS
In stock
Manufacturer |
Infineon Technologies |
---|---|
Element Configuration |
Single |
Mounting Type |
Surface Mount |
Package / Case |
TO-220AB |
Number of Pins |
3 |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Turn Off Delay Time |
25 ns |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2004 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Max Power Dissipation |
80W |
Mount |
Surface Mount, Through Hole |
Turn On Delay Time |
14 ns |
Power Dissipation |
80W |
Rise Time |
160ns |
Drain to Source Voltage (Vdss) |
55V |
Vgs (Max) |
±16V |
Fall Time (Typ) |
42 ns |
Continuous Drain Current (ID) |
51A |
Gate to Source Voltage (Vgs) |
16V |
Drain to Source Breakdown Voltage |
55V |
Input Capacitance |
1.62nF |
Drain to Source Resistance |
13.5mOhm |
Height |
4.83mm |
Length |
10.67mm |
Width |
9.65mm |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Infineon Technologies BSA223SP
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Package / Case |
SC-75, SOT-416 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
390mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
250mW Ta |
Voltage - Rated DC |
-20V |
Mount |
Surface Mount |
Published |
2002 |
Series |
OptiMOS™ |
JESD-609 Code |
e3 |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN |
Additional Feature |
AVALANCHE RATED |
Operating Temperature |
-55°C~150°C TJ |
Terminal Position |
DUAL |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
1.2 Ω @ 390mA, 4.5V |
Current Rating |
-390mA |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
250mW |
FET Type |
P-Channel |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Vgs(th) (Max) @ Id |
1.2V @ 1.5μA |
Input Capacitance (Ciss) (Max) @ Vds |
56pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
0.62nC @ 4.5V |
Drain to Source Voltage (Vdss) |
20V |
Vgs (Max) |
±12V |
Continuous Drain Current (ID) |
390mA |
Gate to Source Voltage (Vgs) |
12V |
Feedback Cap-Max (Crss) |
22 pF |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies BSB012N03LX3 G
In stock
Manufacturer |
Infineon Technologies |
---|---|
Series |
OptiMOS™ |
Package / Case |
3-WDSON |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
39A Ta 180A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
2.8W Ta 89W Tc |
Operating Temperature |
-40°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Terminal Form |
NO LEAD |
Mounting Type |
Surface Mount |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN |
HTS Code |
8541.29.00.95 |
Terminal Position |
BOTTOM |
Published |
2009 |
Peak Reflow Temperature (Cel) |
260 |
Rds On (Max) @ Id, Vgs |
1.2m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id |
2.2V @ 250μA |
Pin Count |
3 |
JESD-30 Code |
R-MBCC-N3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Reach Compliance Code |
compliant |
Time@Peak Reflow Temperature-Max (s) |
40 |
Input Capacitance (Ciss) (Max) @ Vds |
16900pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
169nC @ 10V |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Drain Current-Max (Abs) (ID) |
39A |
Drain-source On Resistance-Max |
0.0012Ohm |
Pulsed Drain Current-Max (IDM) |
400A |
DS Breakdown Voltage-Min |
30V |
Avalanche Energy Rating (Eas) |
290 mJ |
RoHS Status |
RoHS Compliant |
Infineon Technologies BSB028N06NN3GXUMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Pin Count |
3 |
Package / Case |
3-WDSON |
Surface Mount |
YES |
Number of Pins |
7 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
22A Ta 90A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.2W Ta 78W Tc |
Turn Off Delay Time |
38 ns |
Operating Temperature |
-40°C~150°C TJ |
Published |
2012 |
Series |
OptiMOS™ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e4 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Silver/Nickel (Ag/Ni) |
Terminal Position |
BOTTOM |
Terminal Form |
NO LEAD |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Surface Mount |
Factory Lead Time |
26 Weeks |
Rise Time |
9ns |
Vgs (Max) |
±20V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
78W |
Case Connection |
DRAIN |
Turn On Delay Time |
21 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
2.8m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id |
4V @ 102μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
12000pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs |
143nC @ 10V |
Qualification Status |
Not Qualified |
JESD-30 Code |
R-MBCC-N3 |
Fall Time (Typ) |
6 ns |
Continuous Drain Current (ID) |
90A |
Threshold Voltage |
3V |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
22A |
Drain-source On Resistance-Max |
0.0028Ohm |
Drain to Source Breakdown Voltage |
60V |
Pulsed Drain Current-Max (IDM) |
360A |
Avalanche Energy Rating (Eas) |
590 mJ |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Lead Free |
Lead Free |
Infineon Technologies BSB053N03LP G
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2009 |
Package / Case |
3-WDSON |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
17A Ta 71A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.3W Ta 42W Tc |
Operating Temperature |
-40°C~150°C TJ |
Terminal Form |
NO LEAD |
Mounting Type |
Surface Mount |
Series |
OptiMOS™ |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN |
Additional Feature |
AVALANCHE RATED |
Terminal Position |
BOTTOM |
Packaging |
Tape & Reel (TR) |
Peak Reflow Temperature (Cel) |
260 |
Rds On (Max) @ Id, Vgs |
5.3m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id |
2.2V @ 250μA |
Pin Count |
3 |
JESD-30 Code |
R-MBCC-N3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Reach Compliance Code |
compliant |
Time@Peak Reflow Temperature-Max (s) |
40 |
Input Capacitance (Ciss) (Max) @ Vds |
2700pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Drain Current-Max (Abs) (ID) |
17A |
Drain-source On Resistance-Max |
0.0053Ohm |
Pulsed Drain Current-Max (IDM) |
284A |
DS Breakdown Voltage-Min |
30V |
Avalanche Energy Rating (Eas) |
75 mJ |
RoHS Status |
RoHS Compliant |
Infineon Technologies BSB165N15NZ3GXUMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tape & Reel (TR) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
3-WDSON |
Number of Pins |
7 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
9A Ta 45A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
8V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.8W Ta 78W Tc |
Turn Off Delay Time |
17 ns |
Terminal Form |
NO LEAD |
Factory Lead Time |
26 Weeks |
Published |
2011 |
Series |
OptiMOS™ |
JESD-609 Code |
e4 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Silver/Nickel (Ag/Ni) |
Terminal Position |
BOTTOM |
Operating Temperature |
-40°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Vgs(th) (Max) @ Id |
4V @ 110μA |
Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 75V |
JESD-30 Code |
R-MBCC-N3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2.8W |
Case Connection |
DRAIN |
Turn On Delay Time |
10 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
16.5m Ω @ 30A, 10V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
Drain to Source Voltage (Vdss) |
150V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
7 ns |
Continuous Drain Current (ID) |
9A |
Threshold Voltage |
3V |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
9A |
Avalanche Energy Rating (Eas) |
440 mJ |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSB280N15NZ3GXUMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tape & Reel (TR) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
3-WDSON |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
9A Ta 30A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.8W Ta 57W Tc |
Turn Off Delay Time |
16 ns |
Terminal Form |
NO LEAD |
Factory Lead Time |
26 Weeks |
Published |
2012 |
Series |
OptiMOS™ |
JESD-609 Code |
e4 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Silver/Nickel (Ag/Ni) |
Terminal Position |
BOTTOM |
Operating Temperature |
-40°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
Rise Time |
6ns |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
Turn On Delay Time |
9 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
28m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id |
4V @ 60μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
1600pF @ 75V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Vgs (Max) |
±20V |
Fall Time (Typ) |
3 ns |
Continuous Drain Current (ID) |
30A |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
150V |
Drain Current-Max (Abs) (ID) |
9A |
Drain-source On Resistance-Max |
0.028Ohm |
Pulsed Drain Current-Max (IDM) |
120A |
Avalanche Energy Rating (Eas) |
120 mJ |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies BSC010NE2LSATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Factory Lead Time |
26 Weeks |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Number of Pins |
8 |
Supplier Device Package |
PG-TDSON-8-7 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2012 |
Series |
OptiMOS™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Elements |
1 |
Power Dissipation-Max |
2.5W Ta 96W Tc |
Power Dissipation |
96W |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
1mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
4700pF @ 12V |
Current - Continuous Drain (Id) @ 25°C |
39A Ta 100A Tc |
Gate Charge (Qg) (Max) @ Vgs |
64nC @ 10V |
Rise Time |
6ns |
Drain to Source Voltage (Vdss) |
25V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
39A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Resistance |
800μOhm |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSC011N03LSATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-609 Code |
e3 |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2012 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Factory Lead Time |
26 Weeks |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
5 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
FLAT |
Pin Count |
8 |
JESD-30 Code |
R-PDSO-F5 |
Number of Elements |
1 |
Series |
OptiMOS™ |
Power Dissipation-Max |
2.5W Ta 96W Tc |
Gate Charge (Qg) (Max) @ Vgs |
72nC @ 10V |
Rise Time |
8.8ns |
Case Connection |
DRAIN |
Turn On Delay Time |
6.7 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
1.1m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id |
2.2V @ 250μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
4700pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
37A Ta 100A Tc |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2.5W |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
6.2 ns |
Turn-Off Delay Time |
37 ns |
Continuous Drain Current (ID) |
37A |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
30V |
Pulsed Drain Current-Max (IDM) |
400A |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead |