Transistors - FETs/MOSFETs - Single

Infineon Technologies AUIRLZ24NS

In stock

SKU: AUIRLZ24NS-11
Manufacturer

Infineon Technologies

Factory Lead Time

13 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Current - Continuous Drain (Id) @ 25℃

18A Tc

Drive Voltage (Max Rds On, Min Rds On)

4V 10V

Power Dissipation (Max)

3.8W Ta 45W Tc

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2015

Series

HEXFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

60m Ω @ 11A, 10V

Vgs(th) (Max) @ Id

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

480pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

15nC @ 5V

Drain to Source Voltage (Vdss)

55V

Vgs (Max)

±16V

Continuous Drain Current (ID)

18A

RoHS Status

ROHS3 Compliant

Infineon Technologies AUIRLZ44ZL

In stock

SKU: AUIRLZ44ZL-11
Manufacturer

Infineon Technologies

Operating Temperature

-55°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Supplier Device Package

TO-220AB

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Max Power Dissipation

80W

Factory Lead Time

13 Weeks

Packaging

Tube

Published

2003

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

175°C

Min Operating Temperature

-55°C

Turn Off Delay Time

25 ns

Element Configuration

Single

Gate to Source Voltage (Vgs)

16V

Drain to Source Breakdown Voltage

55V

Rise Time

160ns

Drain to Source Voltage (Vdss)

55V

Vgs (Max)

±16V

Fall Time (Typ)

42 ns

Continuous Drain Current (ID)

51A

Threshold Voltage

1V

Power Dissipation

80W

Turn On Delay Time

14 ns

Input Capacitance

1.62nF

Drain to Source Resistance

13.5mOhm

Height

9.65mm

Length

10.67mm

Width

4.83mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Infineon Technologies AUIRLZ44ZS

In stock

SKU: AUIRLZ44ZS-11
Manufacturer

Infineon Technologies

Element Configuration

Single

Mounting Type

Surface Mount

Package / Case

TO-220AB

Number of Pins

3

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Turn Off Delay Time

25 ns

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

175°C

Min Operating Temperature

-55°C

Max Power Dissipation

80W

Mount

Surface Mount, Through Hole

Turn On Delay Time

14 ns

Power Dissipation

80W

Rise Time

160ns

Drain to Source Voltage (Vdss)

55V

Vgs (Max)

±16V

Fall Time (Typ)

42 ns

Continuous Drain Current (ID)

51A

Gate to Source Voltage (Vgs)

16V

Drain to Source Breakdown Voltage

55V

Input Capacitance

1.62nF

Drain to Source Resistance

13.5mOhm

Height

4.83mm

Length

10.67mm

Width

9.65mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Infineon Technologies AUXHAF2805STRR

In stock

SKU: AUXHAF2805STRR-11
Manufacturer

Infineon Technologies

Packaging

Tape & Reel (TR)

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

RoHS Status

ROHS3 Compliant

Infineon Technologies BSA223SP

In stock

SKU: BSA223SP-11
Manufacturer

Infineon Technologies

Packaging

Tape & Reel (TR)

Mounting Type

Surface Mount

Package / Case

SC-75, SOT-416

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

390mA Ta

Drive Voltage (Max Rds On, Min Rds On)

2.5V 4.5V

Number of Elements

1

Power Dissipation (Max)

250mW Ta

Voltage - Rated DC

-20V

Mount

Surface Mount

Published

2002

Series

OptiMOS™

JESD-609 Code

e3

Part Status

Discontinued

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Additional Feature

AVALANCHE RATED

Operating Temperature

-55°C~150°C TJ

Terminal Position

DUAL

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

1.2 Ω @ 390mA, 4.5V

Current Rating

-390mA

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Power Dissipation

250mW

FET Type

P-Channel

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Vgs(th) (Max) @ Id

1.2V @ 1.5μA

Input Capacitance (Ciss) (Max) @ Vds

56pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

0.62nC @ 4.5V

Drain to Source Voltage (Vdss)

20V

Vgs (Max)

±12V

Continuous Drain Current (ID)

390mA

Gate to Source Voltage (Vgs)

12V

Feedback Cap-Max (Crss)

22 pF

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies BSB012N03LX3 G

In stock

SKU: BSB012N03LX3 G-11
Manufacturer

Infineon Technologies

Series

OptiMOS™

Package / Case

3-WDSON

Surface Mount

YES

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

39A Ta 180A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

2.8W Ta 89W Tc

Operating Temperature

-40°C~150°C TJ

Packaging

Tape & Reel (TR)

Terminal Form

NO LEAD

Mounting Type

Surface Mount

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

MATTE TIN

HTS Code

8541.29.00.95

Terminal Position

BOTTOM

Published

2009

Peak Reflow Temperature (Cel)

260

Rds On (Max) @ Id, Vgs

1.2m Ω @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250μA

Pin Count

3

JESD-30 Code

R-MBCC-N3

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Reach Compliance Code

compliant

Time@Peak Reflow Temperature-Max (s)

40

Input Capacitance (Ciss) (Max) @ Vds

16900pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

169nC @ 10V

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Drain Current-Max (Abs) (ID)

39A

Drain-source On Resistance-Max

0.0012Ohm

Pulsed Drain Current-Max (IDM)

400A

DS Breakdown Voltage-Min

30V

Avalanche Energy Rating (Eas)

290 mJ

RoHS Status

RoHS Compliant

Infineon Technologies BSB028N06NN3GXUMA1

In stock

SKU: BSB028N06NN3GXUMA1-11
Manufacturer

Infineon Technologies

Pin Count

3

Package / Case

3-WDSON

Surface Mount

YES

Number of Pins

7

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

22A Ta 90A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

2.2W Ta 78W Tc

Turn Off Delay Time

38 ns

Operating Temperature

-40°C~150°C TJ

Published

2012

Series

OptiMOS™

Packaging

Tape & Reel (TR)

JESD-609 Code

e4

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Silver/Nickel (Ag/Ni)

Terminal Position

BOTTOM

Terminal Form

NO LEAD

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Surface Mount

Factory Lead Time

26 Weeks

Rise Time

9ns

Vgs (Max)

±20V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

78W

Case Connection

DRAIN

Turn On Delay Time

21 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2.8m Ω @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 102μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

12000pF @ 30V

Gate Charge (Qg) (Max) @ Vgs

143nC @ 10V

Qualification Status

Not Qualified

JESD-30 Code

R-MBCC-N3

Fall Time (Typ)

6 ns

Continuous Drain Current (ID)

90A

Threshold Voltage

3V

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

22A

Drain-source On Resistance-Max

0.0028Ohm

Drain to Source Breakdown Voltage

60V

Pulsed Drain Current-Max (IDM)

360A

Avalanche Energy Rating (Eas)

590 mJ

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Lead Free

Lead Free

Infineon Technologies BSB053N03LP G

In stock

SKU: BSB053N03LP G-11
Manufacturer

Infineon Technologies

Published

2009

Package / Case

3-WDSON

Surface Mount

YES

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

17A Ta 71A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2.3W Ta 42W Tc

Operating Temperature

-40°C~150°C TJ

Terminal Form

NO LEAD

Mounting Type

Surface Mount

Series

OptiMOS™

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Additional Feature

AVALANCHE RATED

Terminal Position

BOTTOM

Packaging

Tape & Reel (TR)

Peak Reflow Temperature (Cel)

260

Rds On (Max) @ Id, Vgs

5.3m Ω @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250μA

Pin Count

3

JESD-30 Code

R-MBCC-N3

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Reach Compliance Code

compliant

Time@Peak Reflow Temperature-Max (s)

40

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Drain Current-Max (Abs) (ID)

17A

Drain-source On Resistance-Max

0.0053Ohm

Pulsed Drain Current-Max (IDM)

284A

DS Breakdown Voltage-Min

30V

Avalanche Energy Rating (Eas)

75 mJ

RoHS Status

RoHS Compliant

Infineon Technologies BSB165N15NZ3GXUMA1

In stock

SKU: BSB165N15NZ3GXUMA1-11
Manufacturer

Infineon Technologies

Packaging

Tape & Reel (TR)

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

3-WDSON

Number of Pins

7

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

9A Ta 45A Tc

Drive Voltage (Max Rds On, Min Rds On)

8V 10V

Number of Elements

1

Power Dissipation (Max)

2.8W Ta 78W Tc

Turn Off Delay Time

17 ns

Terminal Form

NO LEAD

Factory Lead Time

26 Weeks

Published

2011

Series

OptiMOS™

JESD-609 Code

e4

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Silver/Nickel (Ag/Ni)

Terminal Position

BOTTOM

Operating Temperature

-40°C~150°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Vgs(th) (Max) @ Id

4V @ 110μA

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 75V

JESD-30 Code

R-MBCC-N3

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.8W

Case Connection

DRAIN

Turn On Delay Time

10 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

16.5m Ω @ 30A, 10V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Drain to Source Voltage (Vdss)

150V

Vgs (Max)

±20V

Fall Time (Typ)

7 ns

Continuous Drain Current (ID)

9A

Threshold Voltage

3V

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

9A

Avalanche Energy Rating (Eas)

440 mJ

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Infineon Technologies BSB280N15NZ3GXUMA1

In stock

SKU: BSB280N15NZ3GXUMA1-11
Manufacturer

Infineon Technologies

Packaging

Tape & Reel (TR)

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

3-WDSON

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

9A Ta 30A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

2.8W Ta 57W Tc

Turn Off Delay Time

16 ns

Terminal Form

NO LEAD

Factory Lead Time

26 Weeks

Published

2012

Series

OptiMOS™

JESD-609 Code

e4

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Silver/Nickel (Ag/Ni)

Terminal Position

BOTTOM

Operating Temperature

-40°C~150°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Rise Time

6ns

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Turn On Delay Time

9 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

28m Ω @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 60μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 75V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Vgs (Max)

±20V

Fall Time (Typ)

3 ns

Continuous Drain Current (ID)

30A

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

150V

Drain Current-Max (Abs) (ID)

9A

Drain-source On Resistance-Max

0.028Ohm

Pulsed Drain Current-Max (IDM)

120A

Avalanche Energy Rating (Eas)

120 mJ

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies BSC010NE2LSATMA1

In stock

SKU: BSC010NE2LSATMA1-11
Manufacturer

Infineon Technologies

Factory Lead Time

26 Weeks

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Supplier Device Package

PG-TDSON-8-7

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2012

Series

OptiMOS™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Number of Elements

1

Power Dissipation-Max

2.5W Ta 96W Tc

Power Dissipation

96W

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

1mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

4700pF @ 12V

Current - Continuous Drain (Id) @ 25°C

39A Ta 100A Tc

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Rise Time

6ns

Drain to Source Voltage (Vdss)

25V

Drive Voltage (Max Rds On,Min Rds On)

4.5V 10V

Vgs (Max)

±20V

Continuous Drain Current (ID)

39A

Gate to Source Voltage (Vgs)

20V

Drain to Source Resistance

800μOhm

RoHS Status

ROHS3 Compliant

Infineon Technologies BSC011N03LSATMA1

In stock

SKU: BSC011N03LSATMA1-11
Manufacturer

Infineon Technologies

JESD-609 Code

e3

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2012

Configuration

SINGLE WITH BUILT-IN DIODE

Factory Lead Time

26 Weeks

Pbfree Code

no

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Terminal Position

DUAL

Terminal Form

FLAT

Pin Count

8

JESD-30 Code

R-PDSO-F5

Number of Elements

1

Series

OptiMOS™

Power Dissipation-Max

2.5W Ta 96W Tc

Gate Charge (Qg) (Max) @ Vgs

72nC @ 10V

Rise Time

8.8ns

Case Connection

DRAIN

Turn On Delay Time

6.7 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

1.1m Ω @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

4700pF @ 15V

Current - Continuous Drain (Id) @ 25°C

37A Ta 100A Tc

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.5W

Drive Voltage (Max Rds On,Min Rds On)

4.5V 10V

Vgs (Max)

±20V

Fall Time (Typ)

6.2 ns

Turn-Off Delay Time

37 ns

Continuous Drain Current (ID)

37A

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

30V

Pulsed Drain Current-Max (IDM)

400A

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead