Showing 1081–1092 of 7598 results
Infineon Technologies BSC014N03LSGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
34A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 139W Tc |
| Turn Off Delay Time |
51 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
3 Weeks |
| Published |
2006 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Halogen Free |
Halogen Free |
| JESD-30 Code |
R-PDSO-F5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
139W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.4m Ω @ 30A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| Input Capacitance (Ciss) (Max) @ Vds |
10000pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
131nC @ 10V |
| Rise Time |
8.6ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
34A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
30V |
| Drain-source On Resistance-Max |
0.0021Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
290 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSC014N04LSTATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
DUAL |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
33A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
3W Ta 115W Tc |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
26 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
6020pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
85nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.4m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Reach Compliance Code |
not_compliant |
| Terminal Form |
FLAT |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
32A |
| Drain-source On Resistance-Max |
0.0019Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
170 mJ |
| JESD-30 Code |
R-PDSO-F3 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSC014N06NSATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation-Max |
2.5W Ta 156W Tc |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
1997 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Pbfree Code |
no |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-F3 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Contact Plating |
Tin |
| Factory Lead Time |
13 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
11 ns |
| Turn On Delay Time |
23 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.45m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
2.8V @ 120μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
6500pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C |
30A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
89nC @ 10V |
| Rise Time |
10ns |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Power Dissipation |
156W |
| Operating Mode |
ENHANCEMENT MODE |
| Turn-Off Delay Time |
43 ns |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
2.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain Current-Max (Abs) (ID) |
30A |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.1mm |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Contains Lead |
Infineon Technologies BSC018NE2LSATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
29A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 69W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2013 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Contact Plating |
Tin |
| Factory Lead Time |
26 Weeks |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-F5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
69W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.8m Ω @ 30A, 10V |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 12V |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
39nC @ 10V |
| Rise Time |
4.4ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
29A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
25V |
| Drain-source On Resistance-Max |
0.0023Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
8 |
| Lead Free |
Contains Lead |
Infineon Technologies BSC018NE2LSIATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2013 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
29A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 69W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
26 Weeks |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 12V |
| JESD-30 Code |
R-PDSO-F5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.8m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Rise Time |
4.8ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
29A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
25V |
| Drain-source On Resistance-Max |
0.0024Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
45 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSC019N04NSGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Pbfree Code |
no |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
OptiMOS™ |
| JESD-30 Code |
R-PDSO-F5 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| Contact Plating |
Tin |
| Factory Lead Time |
26 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
8800pF @ 20V |
| Number of Elements |
1 |
| Power Dissipation-Max |
2.5W Ta 125W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
125W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.9m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 85μA |
| Halogen Free |
Halogen Free |
| Current - Continuous Drain (Id) @ 25°C |
30A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
108nC @ 10V |
| Qualification Status |
Not Qualified |
| Rise Time |
5.6ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
29A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
295 mJ |
| RoHS Status |
ROHS3 Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Contains Lead |
Infineon Technologies BSC022N03S
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
NO LEAD |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
28A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 104W Tc |
| Turn Off Delay Time |
42 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
OptiMOS™ |
| JESD-609 Code |
e0 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Voltage - Rated DC |
30V |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
2V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7490pF @ 15V |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-N5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
9.7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.2m Ω @ 50A, 10V |
| Current Rating |
50A |
| Peak Reflow Temperature (Cel) |
235 |
| Gate Charge (Qg) (Max) @ Vgs |
58nC @ 5V |
| Rise Time |
9ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
50A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0033Ohm |
| Pulsed Drain Current-Max (IDM) |
200A |
| RoHS Status |
Non-RoHS Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Contains Lead |
Infineon Technologies BSC026N02KSGAUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2011 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 78W Tc |
| Turn Off Delay Time |
52 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
26 Weeks |
| Halogen Free |
Halogen Free |
| Pin Count |
8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
78W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.6m Ω @ 50A, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7800pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
52.7nC @ 4.5V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
115ns |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
25A |
| Gate to Source Voltage (Vgs) |
12V |
| Max Dual Supply Voltage |
20V |
| Drain-source On Resistance-Max |
0.0045Ohm |
| Pulsed Drain Current-Max (IDM) |
200A |
| Avalanche Energy Rating (Eas) |
550 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PDSO-F5 |
| Lead Free |
Contains Lead |
Infineon Technologies BSC026N04LSATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
26 Weeks |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Supplier Device Package |
PG-TDSON-8-6 |
| Current - Continuous Drain (Id) @ 25℃ |
23A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.5W Ta 63W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.6mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2300pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| Rise Time |
4ns |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
2.3nF |
| Drain to Source Resistance |
2.1mOhm |
| Rds On Max |
2.6 mΩ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSC028N06LS3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Pbfree Code |
no |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| Number of Channels |
1 |
| Factory Lead Time |
26 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-F5 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-609 Code |
e3 |
| Power Dissipation-Max |
2.5W Ta 139W Tc |
| Rise Time |
17ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.8m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 93μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
13000pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C |
23A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
175nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Vgs (Max) |
±20V |
| Turn-Off Delay Time |
77 ns |
| Continuous Drain Current (ID) |
23A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.1mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSC028N06NSTATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation (Max) |
3W Ta 100W Tc |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
24A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Terminal Position |
DUAL |
| Factory Lead Time |
26 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Terminal Form |
FLAT |
| Input Capacitance (Ciss) (Max) @ Vds |
3375pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
49nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.8m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
3.3V @ 50μA |
| JESD-30 Code |
R-PDSO-F5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
23A |
| Drain-source On Resistance-Max |
0.0028Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
100 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSC032NE2LSATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Pin Count |
8 |
| Factory Lead Time |
26 Weeks |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Series |
OptiMOS™ |
| JESD-30 Code |
R-PDSO-N5 |
| Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C |
22A Ta 84A Tc |
| Power Dissipation-Max |
2.8W Ta 78W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.2m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 10V |
| Rise Time |
2.8ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
22A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
25V |
| Pulsed Drain Current-Max (IDM) |
336A |
| Avalanche Energy Rating (Eas) |
20 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |