Showing 1093–1104 of 7598 results
Infineon Technologies BSC035N10NS5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Power Dissipation-Max |
2.5W Ta 156W Tc |
| Factory Lead Time |
26 Weeks |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-F5 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Part Status |
Active |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±20V |
| Turn-Off Delay Time |
47 ns |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.5m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
3.8V @ 115μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
6500pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
100A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
87nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Power Dissipation |
2.5W |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| Drain-source On Resistance-Max |
0.0035Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
300 mJ |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.1mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSC042N03MSGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2006 |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Ta 93A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 57W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
FLAT |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
39 Weeks |
| Rds On (Max) @ Id, Vgs |
4.2m Ω @ 30A, 10V |
| Reach Compliance Code |
not_compliant |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-F5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4300pF @ 15V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
55nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
17A |
| Drain-source On Resistance-Max |
0.0054Ohm |
| Pulsed Drain Current-Max (IDM) |
372A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
40 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSC042NE7NS3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Pbfree Code |
no |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Reach Compliance Code |
not_compliant |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-F5 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Mount |
Surface Mount |
| Factory Lead Time |
13 Weeks |
| Rise Time |
17ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.2m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
3.8V @ 91μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
4800pF @ 37.5V |
| Current - Continuous Drain (Id) @ 25°C |
19A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
69nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation-Max |
2.5W Ta 125W Tc |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9 ns |
| Turn-Off Delay Time |
34 ns |
| Continuous Drain Current (ID) |
19A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
75V |
| Drain-source On Resistance-Max |
0.0042Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
220 mJ |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
2.5W |
| Lead Free |
Contains Lead |
Infineon Technologies BSC046N10NS3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2005 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
156W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
16 Weeks |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Packaging |
Cut Tape (CT) |
| Reach Compliance Code |
not_compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
4500pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
63nC @ 10V |
| JESD-30 Code |
R-PDSO-F5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
156W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.6m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 120μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| Rise Time |
14ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
17A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| Drain-source On Resistance-Max |
0.0046Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
350 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSC0503NSIATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Ta 88A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
2.5W Ta 36W Tc |
| Published |
2015 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Mount |
Surface Mount |
| Factory Lead Time |
26 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
88A |
| Max Dual Supply Voltage |
30V |
| Drain Current-Max (Abs) (ID) |
22A |
| Drain-source On Resistance-Max |
0.0037Ohm |
| Pulsed Drain Current-Max (IDM) |
352A |
| Avalanche Energy Rating (Eas) |
10 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PDSO-F5 |
| Lead Free |
Contains Lead |
Infineon Technologies BSC050N03LSGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Supplier Device Package |
PG-TDSON-8-5 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2000 |
| Series |
OptiMOS™ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Elements |
1 |
| Power Dissipation-Max |
2.5W Ta 50W Tc |
| Power Dissipation |
50W |
| Contact Plating |
Tin |
| Factory Lead Time |
39 Weeks |
| Continuous Drain Current (ID) |
80A |
| Threshold Voltage |
2.2V |
| Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
18A Ta 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Rise Time |
4ns |
| Drain to Source Voltage (Vdss) |
30V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Rds On (Max) @ Id, Vgs |
5mOhm @ 30A, 10V |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
30V |
| Input Capacitance |
2.8nF |
| Drain to Source Resistance |
4.2mOhm |
| Rds On Max |
5 mΩ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Halogen Free |
Halogen Free |
| Lead Free |
Contains Lead |
Infineon Technologies BSC050N04LSGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Qualification Status |
Not Qualified |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Pbfree Code |
no |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-F5 |
| Mount |
Surface Mount |
| Factory Lead Time |
39 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
| Rise Time |
3.8ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
57W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 27μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
3700pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C |
18A Ta 85A Tc |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Elements |
1 |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
85A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Drain-source On Resistance-Max |
0.0072Ohm |
| Pulsed Drain Current-Max (IDM) |
340A |
| Avalanche Energy Rating (Eas) |
35 mJ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation-Max |
2.5W Ta 57W Tc |
| Lead Free |
Contains Lead |
Infineon Technologies BSC052N08NS5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
OptiMOS™ |
| Element Configuration |
Single |
| Factory Lead Time |
26 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-F5 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
2.5W Ta 83W Tc |
| Pbfree Code |
yes |
| Operating Mode |
ENHANCEMENT MODE |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.2m Ω @ 47.5A, 10V |
| Vgs(th) (Max) @ Id |
3.8V @ 49μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2900pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C |
95A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Rise Time |
7ns |
| Power Dissipation |
2.5W |
| Case Connection |
DRAIN |
| Fall Time (Typ) |
5 ns |
| Turn-Off Delay Time |
19 ns |
| Continuous Drain Current (ID) |
19A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
80V |
| Drain-source On Resistance-Max |
0.0052Ohm |
| Drain to Source Breakdown Voltage |
80V |
| Avalanche Energy Rating (Eas) |
70 mJ |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.1mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSC054N04NSGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Pbfree Code |
no |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
OptiMOS™ |
| JESD-30 Code |
R-PDSO-F5 |
| Factory Lead Time |
26 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| JESD-609 Code |
e3 |
| Qualification Status |
Not Qualified |
| Current - Continuous Drain (Id) @ 25°C |
17A Ta 81A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Power Dissipation-Max |
2.5W Ta 57W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
57W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.4m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 27μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 20V |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Rise Time |
2.6ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
17A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Drain-source On Resistance-Max |
0.0054Ohm |
| Pulsed Drain Current-Max (IDM) |
324A |
| Avalanche Energy Rating (Eas) |
35 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSC057N03MSGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2013 |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Ta 71A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 45W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
FLAT |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
26 Weeks |
| Rds On (Max) @ Id, Vgs |
5.7m Ω @ 30A, 10V |
| Reach Compliance Code |
not_compliant |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-F5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3100pF @ 15V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±16V |
| Drain Current-Max (Abs) (ID) |
15A |
| Drain-source On Resistance-Max |
0.0072Ohm |
| Pulsed Drain Current-Max (IDM) |
284A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
25 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSC060N10NS3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2011 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14.9A Ta 90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
45 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
26 Weeks |
| Halogen Free |
Halogen Free |
| Pin Count |
8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
125W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 90μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4900pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
68nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
16ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
14.9A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| Drain-source On Resistance-Max |
0.006Ohm |
| Pulsed Drain Current-Max (IDM) |
360A |
| Avalanche Energy Rating (Eas) |
230 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PDSO-F5 |
| Lead Free |
Contains Lead |
Infineon Technologies BSC061N08NS5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
19 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
82A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Terminal Form |
FLAT |
| Factory Lead Time |
26 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Position |
DUAL |
| Power Dissipation (Max) |
2.5W Ta 74W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 40V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.1m Ω @ 41A, 10V |
| Vgs(th) (Max) @ Id |
3.8V @ 41μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-F5 |
| Gate Charge (Qg) (Max) @ Vgs |
33nC @ 10V |
| Rise Time |
6ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
82A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
80V |
| Avalanche Energy Rating (Eas) |
50 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |