Showing 1105–1116 of 7598 results
Infineon Technologies BSC072N08NS5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
74A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 69W Tc |
| Reach Compliance Code |
not_compliant |
| Turn Off Delay Time |
19 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
26 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2100pF @ 40V |
| JESD-30 Code |
R-PDSO-F5 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.2m Ω @ 37A, 10V |
| Vgs(th) (Max) @ Id |
3.8V @ 36μA |
| Halogen Free |
Halogen Free |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Rise Time |
7ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
74A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
80V |
| Drain-source On Resistance-Max |
0.0072Ohm |
| Pulsed Drain Current-Max (IDM) |
296A |
| Avalanche Energy Rating (Eas) |
40 mJ |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Contains Lead |
Infineon Technologies BSC084P03NS3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14.9A Ta 78.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 69W Tc |
| Turn Off Delay Time |
33 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
13 Weeks |
| Published |
2006 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Vgs(th) (Max) @ Id |
3.1V @ 105μA |
| Halogen Free |
Halogen Free |
| JESD-30 Code |
R-PDSO-F5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
16 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.4m Ω @ 50A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| Input Capacitance (Ciss) (Max) @ Vds |
4785pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
58nC @ 10V |
| Rise Time |
134ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
14.5A |
| Gate to Source Voltage (Vgs) |
25V |
| Max Dual Supply Voltage |
-30V |
| Pulsed Drain Current-Max (IDM) |
200A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSC094N06LS5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
47A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
36W Tc |
| Turn Off Delay Time |
14 ns |
| Terminal Form |
FLAT |
| Factory Lead Time |
26 Weeks |
| Published |
2013 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rds On (Max) @ Id, Vgs |
9.4m Ω @ 24A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 14μA |
| JESD-30 Code |
R-PDSO-F5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.1W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
9.4nC @ 4.5V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
11A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0094Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.1mm |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSC097N06NSTATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
FLAT |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Ta 48A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
3W Ta 43W Tc |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
26 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.7m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
3.3V @ 14μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1075pF @ 30V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-PDSO-F5 |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
12A |
| Drain-source On Resistance-Max |
0.0097Ohm |
| Pulsed Drain Current-Max (IDM) |
184A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
13 mJ |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSC0996NSATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Terminal Position |
DUAL |
| Factory Lead Time |
13 Weeks |
| Published |
2013 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
FLAT |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 15V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-F5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 8A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Drain to Source Voltage (Vdss) |
34V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
8.5A |
| Drain-source On Resistance-Max |
0.012Ohm |
| Pulsed Drain Current-Max (IDM) |
52A |
| DS Breakdown Voltage-Min |
34V |
| Avalanche Energy Rating (Eas) |
10 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSC105N10LSFGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11.4A Ta 90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
156W Tc |
| Terminal Form |
FLAT |
| Factory Lead Time |
16 Weeks |
| Published |
2007 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
2.4V @ 110μA |
| Halogen Free |
Halogen Free |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-F5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
156W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10.5m Ω @ 50A, 10V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
3900pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
53nC @ 10V |
| Rise Time |
26ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
11.4A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
360A |
| Avalanche Energy Rating (Eas) |
377 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSC117N08NS5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Weight |
506.605978mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
OptiMOS™ |
| Element Configuration |
Single |
| Pbfree Code |
yes |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-F5 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
2.5W Ta 50W Tc |
| Mount |
Surface Mount |
| Factory Lead Time |
26 Weeks |
| Rise Time |
4ns |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11.7m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
3.8V @ 22μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C |
49A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
3 ns |
| Turn-Off Delay Time |
16 ns |
| Continuous Drain Current (ID) |
19A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
80V |
| Drain to Source Breakdown Voltage |
80V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.1mm |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Contains Lead |
Infineon Technologies BSC120N03LSGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta 39A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 28W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
12 ns |
| Published |
2013 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mount |
Surface Mount |
| Factory Lead Time |
26 Weeks |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 15V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
28W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
2.7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Pin Count |
8 |
| Terminal Form |
FLAT |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Rise Time |
2.2ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
2.2 ns |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
30V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PDSO-F5 |
| Lead Free |
Contains Lead |
Infineon Technologies BSC120N03MSGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
7 ns |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Ta 39A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
26 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2002 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
2.5W Ta 28W Tc |
| Terminal Position |
DUAL |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| JESD-30 Code |
R-PDSO-F5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
28W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7.9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 30A, 10V |
| Terminal Form |
FLAT |
| Pin Count |
8 |
| Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
4.4ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
11A |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
30V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSC12DN20NS3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Qualification Status |
Not Qualified |
| Factory Lead Time |
26 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-F5 |
| Pbfree Code |
no |
| Number of Elements |
1 |
| Gate Charge (Qg) (Max) @ Vgs |
8.7nC @ 10V |
| Rise Time |
4ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
125m Ω @ 5.7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 25μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
680pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C |
11.3A Tc |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max |
50W Tc |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3 ns |
| Turn-Off Delay Time |
10 ns |
| Continuous Drain Current (ID) |
11.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
200V |
| Drain-source On Resistance-Max |
0.125Ohm |
| Pulsed Drain Current-Max (IDM) |
45A |
| Avalanche Energy Rating (Eas) |
60 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSC159N10LSFGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2011 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.4A Ta 63A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
114W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
DUAL |
| Factory Lead Time |
26 Weeks |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
FLAT |
| Rds On (Max) @ Id, Vgs |
15.9m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 72μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-F5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
9.4A |
| Drain-source On Resistance-Max |
0.0159Ohm |
| Pulsed Drain Current-Max (IDM) |
252A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
155 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSC440N10NS3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
13 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Supplier Device Package |
PG-TDSON-8-1 |
| Current - Continuous Drain (Id) @ 25℃ |
5.3A Ta 18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation |
29W |
| Factory Lead Time |
26 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Power Dissipation (Max) |
29W Tc |
| Turn On Delay Time |
9 ns |
| Threshold Voltage |
2.7mV |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
3.5V @ 12μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
810pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
10.8nC @ 10V |
| Rise Time |
3ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
18A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
44mOhm @ 12A, 10V |
| Max Dual Supply Voltage |
100V |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance |
810pF |
| Max Junction Temperature (Tj) |
150°C |
| Drain to Source Resistance |
44mOhm |
| Rds On Max |
44 mΩ |
| Height |
1.1mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |