Showing 1129–1140 of 7598 results
Infineon Technologies BSO203SPHXUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
1.6W Ta |
| Published |
2010 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Contact Plating |
Tin |
| Factory Lead Time |
18 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
3750pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
39nC @ 4.5V |
| Pin Count |
8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.6W |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
21m Ω @ 8.9A, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 100μA |
| Halogen Free |
Halogen Free |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Rise Time |
55ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
7A |
| Gate to Source Voltage (Vgs) |
12V |
| Max Dual Supply Voltage |
-20V |
| Pulsed Drain Current-Max (IDM) |
35.6A |
| Avalanche Energy Rating (Eas) |
97 mJ |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Lead Free |
Infineon Technologies BSO301SPNTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
130 ns |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12.6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2002 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
2.5W Ta |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
136nC @ 10V |
| Rise Time |
22ns |
| Power Dissipation |
1.79W |
| Turn On Delay Time |
15 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 14.9A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5890pF @ 25V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
110 ns |
| Continuous Drain Current (ID) |
14.9A |
| Gate to Source Voltage (Vgs) |
20V |
| Pulsed Drain Current-Max (IDM) |
60A |
| DS Breakdown Voltage-Min |
30V |
| Radiation Hardening |
No |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies BSO303SPHXUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Terminal Position |
DUAL |
| Factory Lead Time |
17 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Power Dissipation (Max) |
1.56W Ta |
| Terminal Form |
GULL WING |
| Input Capacitance (Ciss) (Max) @ Vds |
2330pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
54nC @ 10V |
| Pin Count |
8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.56W |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
21m Ω @ 9.1A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 100μA |
| Halogen Free |
Halogen Free |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
11ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
7.2A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
-30V |
| Pulsed Drain Current-Max (IDM) |
36A |
| Avalanche Energy Rating (Eas) |
97 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BSO303SPNTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.9A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.35W Ta |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Published |
2002 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| HTS Code |
8541.29.00.95 |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Input Capacitance (Ciss) (Max) @ Vds |
1754pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
69nC @ 10V |
| JESD-30 Code |
R-PDSO-G8 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
21m Ω @ 8.9A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 100μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
8.9A |
| Drain-source On Resistance-Max |
0.021Ohm |
| Pulsed Drain Current-Max (IDM) |
35.6A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
97 mJ |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies BSO4410
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
DUAL |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Packaging |
Tape & Reel (TR) |
| Published |
2001 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
30V |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
2V @ 42μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1280pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13m Ω @ 11.1A, 10V |
| Peak Reflow Temperature (Cel) |
260 |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 5V |
| Rise Time |
33ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
11.1A |
| Drain-source On Resistance-Max |
0.013Ohm |
| Pulsed Drain Current-Max (IDM) |
44.5A |
| Avalanche Energy Rating (Eas) |
126 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Current Rating |
11.1A |
| Lead Free |
Contains Lead |
Infineon Technologies BSO4822
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Turn Off Delay Time |
30 ns |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Published |
2002 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
30V |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Input Capacitance (Ciss) (Max) @ Vds |
1640pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
26.2nC @ 5V |
| Pin Count |
8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10m Ω @ 12.7A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 55μA |
| Current Rating |
12.7A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
38ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
12.7A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.01Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
51A |
| Avalanche Energy Rating (Eas) |
165 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BSO613SPV
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
DUAL |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.44A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
1999 |
| Series |
SIPMOS® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e0 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
-60V |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
875pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-G8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 3.44A, 10V |
| Peak Reflow Temperature (Cel) |
235 |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
3.44A |
| Drain-source On Resistance-Max |
0.13Ohm |
| Pulsed Drain Current-Max (IDM) |
13.8A |
| Avalanche Energy Rating (Eas) |
150 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Current Rating |
-3.44A |
| Lead Free |
Contains Lead |
Infineon Technologies BSP123E6327T
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Supplier Device Package |
PG-SOT223-4 |
| Current - Continuous Drain (Id) @ 25℃ |
370mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.8V 10V |
| Power Dissipation (Max) |
1.79W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| Series |
SIPMOS® |
| Part Status |
Obsolete |
| Mount |
Surface Mount |
| Current Rating |
380mA |
| Voltage - Rated DC |
100V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6Ohm @ 370mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
70pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
2.4nC @ 10V |
| Rise Time |
5ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
370mA |
| Input Capacitance |
70pF |
| Rds On Max |
6 Ω |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BSP129L6327HTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
DUAL |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
350mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
0V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.8W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
22 ns |
| Published |
2012 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rise Time |
4.1ns |
| Drain to Source Voltage (Vdss) |
240V |
| Power Dissipation |
1.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4.4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6 Ω @ 350mA, 10V |
| Vgs(th) (Max) @ Id |
1V @ 108μA |
| Input Capacitance (Ciss) (Max) @ Vds |
108pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
5.7nC @ 5V |
| Pin Count |
4 |
| Terminal Form |
GULL WING |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
350mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.35A |
| Drain-source On Resistance-Max |
6Ohm |
| FET Feature |
Depletion Mode |
| Radiation Hardening |
No |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BSP135 E6327
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2007 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
0V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.8W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
DUAL |
| Packaging |
Tape & Reel (TR) |
| Series |
SIPMOS® |
| JESD-609 Code |
e0 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| HTS Code |
8541.29.00.95 |
| Package / Case |
TO-261-4, TO-261AA |
| Mounting Type |
Surface Mount |
| Vgs(th) (Max) @ Id |
1V @ 94μA |
| Peak Reflow Temperature (Cel) |
260 |
| Pin Count |
4 |
| JESD-30 Code |
R-PDSO-G4 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
45 Ω @ 120mA, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
146pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
4.9nC @ 5V |
| Terminal Form |
GULL WING |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
0.1A |
| Drain-source On Resistance-Max |
60Ohm |
| Pulsed Drain Current-Max (IDM) |
0.3A |
| DS Breakdown Voltage-Min |
600V |
| FET Feature |
Depletion Mode |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies BSP135 E6906
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| HTS Code |
8541.29.00.95 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
0V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.8W Ta |
| Packaging |
Tape & Reel (TR) |
| Published |
2007 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Package / Case |
TO-261-4, TO-261AA |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
146pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
4.9nC @ 5V |
| JESD-30 Code |
R-PDSO-G4 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
45 Ω @ 120mA, 10V |
| Vgs(th) (Max) @ Id |
1V @ 94μA |
| Terminal Form |
GULL WING |
| Terminal Position |
DUAL |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
0.1A |
| Drain-source On Resistance-Max |
60Ohm |
| Pulsed Drain Current-Max (IDM) |
0.3A |
| DS Breakdown Voltage-Min |
600V |
| FET Feature |
Depletion Mode |
| Pin Count |
4 |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies BSP135H6327XTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2012 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Element Configuration |
Single |
| Factory Lead Time |
10 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
4 |
| Number of Elements |
1 |
| Voltage |
600V |
| Power Dissipation-Max |
1.8W Ta |
| Pbfree Code |
yes |
| Current |
12A |
| Fall Time (Typ) |
182 ns |
| Turn-Off Delay Time |
28 ns |
| Turn On Delay Time |
5.4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
45 Ω @ 120mA, 10V |
| Vgs(th) (Max) @ Id |
1V @ 94μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
146pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
120mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
4.9nC @ 5V |
| Rise Time |
5.6ns |
| Drive Voltage (Max Rds On,Min Rds On) |
0V 10V |
| Vgs (Max) |
±20V |
| Power Dissipation |
1.8W |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
120mA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain to Source Breakdown Voltage |
600V |
| Recovery Time |
130 ns |
| FET Feature |
Depletion Mode |
| Height |
1.5mm |
| Length |
6.5mm |
| Width |
3.5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |