Showing 1141–1152 of 7598 results
Infineon Technologies BSP135L6906HTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
28 ns |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
0V 10V |
| Number of Elements |
1 |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Series |
SIPMOS® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Power Dissipation (Max) |
1.8W Ta |
| Terminal Form |
GULL WING |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
5.4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
45 Ω @ 120mA, 10V |
| Vgs(th) (Max) @ Id |
1V @ 94μA |
| Input Capacitance (Ciss) (Max) @ Vds |
146pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
4.9nC @ 5V |
| Rise Time |
5.6ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
DRAIN |
| Fall Time (Typ) |
182 ns |
| Continuous Drain Current (ID) |
120mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.12A |
| DS Breakdown Voltage-Min |
600V |
| FET Feature |
Depletion Mode |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BSP149L6906HTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
DUAL |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
660mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
0V 10V |
| Power Dissipation (Max) |
1.8W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Number of Elements |
1 |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Series |
SIPMOS® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.8 Ω @ 660mA, 10V |
| Vgs(th) (Max) @ Id |
1V @ 400μA |
| Input Capacitance (Ciss) (Max) @ Vds |
430pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 5V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Terminal Form |
GULL WING |
| Continuous Drain Current (ID) |
660mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.66A |
| Pulsed Drain Current-Max (IDM) |
2.6A |
| DS Breakdown Voltage-Min |
200V |
| FET Feature |
Depletion Mode |
| Power Dissipation |
1.8W |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BSP171PL6327HTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.9A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.8W Ta |
| Turn Off Delay Time |
208 ns |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Published |
2005 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
25ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
6 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
300m Ω @ 1.9A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 460μA |
| Input Capacitance (Ciss) (Max) @ Vds |
460pF @ 25V |
| Pin Count |
4 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
87 ns |
| Continuous Drain Current (ID) |
1.9A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.3Ohm |
| DS Breakdown Voltage-Min |
60V |
| Feedback Cap-Max (Crss) |
55 pF |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BSP295L6327HTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
GULL WING |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.8W Ta |
| Turn Off Delay Time |
27 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2002 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Rise Time |
9.9ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5.4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
300m Ω @ 1.8A, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 400μA |
| Input Capacitance (Ciss) (Max) @ Vds |
368pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Peak Reflow Temperature (Cel) |
260 |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
19 ns |
| Continuous Drain Current (ID) |
1.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.5Ohm |
| Pulsed Drain Current-Max (IDM) |
7.2A |
| DS Breakdown Voltage-Min |
60V |
| Radiation Hardening |
No |
| Pin Count |
4 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BSP298H6327XUSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
3 |
| Supplier Device Package |
PG-SOT223-4 |
| Current - Continuous Drain (Id) @ 25℃ |
500mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.8W Ta |
| Turn On Delay Time |
10 ns |
| Turn Off Delay Time |
30 ns |
| Packaging |
Cut Tape (CT) |
| Published |
2008 |
| Series |
SIPMOS® |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Power Dissipation |
1.8W |
| Contact Plating |
Tin |
| Factory Lead Time |
10 Weeks |
| Max Dual Supply Voltage |
400V |
| Rds On (Max) @ Id, Vgs |
3Ohm @ 500mA, 10V |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
400pF @ 25V |
| Rise Time |
25ns |
| Drain to Source Voltage (Vdss) |
400V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
500mA |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
400V |
| Dual Supply Voltage |
400V |
| FET Type |
N-Channel |
| Input Capacitance |
400pF |
| Drain to Source Resistance |
2.2Ohm |
| Rds On Max |
3 Ω |
| Nominal Vgs |
3 V |
| Height |
1.6mm |
| Length |
6.5mm |
| Width |
6.7mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Lead Free |
Lead Free |
Infineon Technologies BSP298L6327HUSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation (Max) |
1.8W Ta |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Supplier Device Package |
PG-SOT223-4 |
| Current - Continuous Drain (Id) @ 25℃ |
500mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Mount |
Surface Mount |
| Turn Off Delay Time |
30 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
SIPMOS® |
| Part Status |
Obsolete |
| Number of Elements |
1 |
| Max Operating Temperature |
150°C |
| Drain to Source Voltage (Vdss) |
400V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
400pF @ 25V |
| Rise Time |
25ns |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
1.8W |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
500mA |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
400pF |
| Rds On Max |
3 Ω |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BSP300H6327XUSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2008 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Power Dissipation-Max |
1.8W Ta |
| Part Status |
Last Time Buy |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Number of Elements |
1 |
| Voltage |
800V |
| Mount |
Surface Mount |
| Factory Lead Time |
10 Weeks |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Current |
2A |
| Power Dissipation |
1.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
20 Ω @ 190mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
230pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
190mA Ta |
| Rise Time |
16ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
21 ns |
| Element Configuration |
Single |
| Turn-Off Delay Time |
27 ns |
| Continuous Drain Current (ID) |
190mA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
800V |
| Drain to Source Breakdown Voltage |
800V |
| Avalanche Energy Rating (Eas) |
36 mJ |
| Height |
1.6mm |
| Length |
6.5mm |
| Width |
3.5mm |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Infineon Technologies BSP315PH6327XTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Manufacturer Package Identifier |
PG-SOT223-4 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
1999 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Power Dissipation |
1.8W |
| Factory Lead Time |
10 Weeks |
| Number of Terminations |
4 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
4 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
1.8W Ta |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Part Status |
Active |
| Case Connection |
DRAIN |
| Threshold Voltage |
-1.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
800m Ω @ 1.17A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 160μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
160pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
1.17A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
7.8nC @ 10V |
| Rise Time |
9ns |
| Drain to Source Voltage (Vdss) |
60V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
19 ns |
| Turn-Off Delay Time |
32 ns |
| Continuous Drain Current (ID) |
1.17A |
| Turn On Delay Time |
24 ns |
| FET Type |
P-Channel |
| Max Dual Supply Voltage |
-60V |
| Drain-source On Resistance-Max |
0.8Ohm |
| Drain to Source Breakdown Voltage |
-60V |
| Dual Supply Voltage |
-60V |
| Recovery Time |
46 ns |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
-1.5 V |
| Height |
1.8mm |
| Length |
6.5mm |
| Width |
6.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BSP316PH6327XTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2002 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Element Configuration |
Single |
| Pbfree Code |
yes |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
4 |
| Number of Elements |
1 |
| Power Dissipation-Max |
1.8W Ta |
| Contact Plating |
Tin |
| Factory Lead Time |
10 Weeks |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Power Dissipation |
1.8W |
| Turn On Delay Time |
4.7 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
1.8 Ω @ 680mA, 10V |
| Vgs(th) (Max) @ Id |
2V @ 170μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
146pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
680mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
6.4nC @ 10V |
| Rise Time |
7.5ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25.9 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Turn-Off Delay Time |
67.4 ns |
| Continuous Drain Current (ID) |
680mA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
-100V |
| Drain Current-Max (Abs) (ID) |
0.68A |
| Pulsed Drain Current-Max (IDM) |
2.72A |
| Height |
1.6mm |
| Length |
6.5mm |
| Width |
3.5mm |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Infineon Technologies BSP318SL6327HTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
GULL WING |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
20 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
1.8W Ta |
| Packaging |
Tape & Reel (TR) |
| Published |
1999 |
| Series |
SIPMOS® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
60V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
90m Ω @ 2.6A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 20μA |
| Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
2.6A |
| Gate to Source Voltage (Vgs) |
20V |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
60 mJ |
| Radiation Hardening |
No |
| Power Dissipation |
1.8W |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BSP320SL6433HTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
25 ns |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.9A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
SIPMOS® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Additional Feature |
AVALANCHE RATED |
| Power Dissipation (Max) |
1.8W Ta |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Rise Time |
25ns |
| Power Dissipation |
1.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
120m Ω @ 2.9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 20μA |
| Input Capacitance (Ciss) (Max) @ Vds |
340pF @ 25V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
2.9A |
| Gate to Source Voltage (Vgs) |
20V |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
60 mJ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BSP321PH6327XTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Weight |
250.212891mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
980mA Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.8W Ta |
| Terminal Form |
GULL WING |
| Factory Lead Time |
10 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Series |
SIPMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Turn Off Delay Time |
16.5 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rise Time |
4.4ns |
| Drain to Source Voltage (Vdss) |
100V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5.9 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
900m Ω @ 980mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 380μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
319pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8.5 ns |
| Continuous Drain Current (ID) |
980mA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
-100V |
| Drain Current-Max (Abs) (ID) |
0.98A |
| Drain-source On Resistance-Max |
0.9Ohm |
| Height |
3.5mm |
| Length |
6.5mm |
| Width |
1.6mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |