Transistors - FETs/MOSFETs - Single

Infineon Technologies BSS131E6327

In stock

SKU: BSS131E6327-11
Manufacturer

Infineon Technologies

Published

1999

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

110mA Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

360mW Ta

Operating Temperature

-55°C~150°C TJ

Terminal Position

DUAL

Mount

Surface Mount

Series

SIPMOS®

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Additional Feature

LOGIC LEVEL COMPATIBLE

Voltage - Rated DC

240V

Packaging

Tape & Reel (TR)

Terminal Form

GULL WING

Rds On (Max) @ Id, Vgs

14 Ω @ 100mA, 10V

Vgs(th) (Max) @ Id

1.8V @ 56μA

Pin Count

3

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Voltage

240V

Current

1A

Operating Mode

ENHANCEMENT MODE

Power Dissipation

360mW

FET Type

N-Channel

Transistor Application

SWITCHING

Reach Compliance Code

unknown

Current Rating

100mA

Input Capacitance (Ciss) (Max) @ Vds

77pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

3.1nC @ 10V

Rise Time

8ns

Vgs (Max)

±20V

Continuous Drain Current (ID)

110mA

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

26Ohm

Feedback Cap-Max (Crss)

5 pF

RoHS Status

RoHS Compliant

Lead Free

Contains Lead

Infineon Technologies BSS131H6327XTSA1

In stock

SKU: BSS131H6327XTSA1-11
Manufacturer

Infineon Technologies

Operating Mode

ENHANCEMENT MODE

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

1997

Series

SIPMOS®

JESD-609 Code

e3

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Part Status

Active

Termination

SMD/SMT

ECCN Code

EAR99

Additional Feature

LOGIC LEVEL COMPATIBLE

Terminal Position

DUAL

Terminal Form

GULL WING

Pin Count

3

Number of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Number of Channels

1

Voltage

240V

Power Dissipation-Max

360mW Ta

Contact Plating

Tin

Factory Lead Time

10 Weeks

Threshold Voltage

1.4V

Gate to Source Voltage (Vgs)

20V

Rds On (Max) @ Id, Vgs

14 Ω @ 100mA, 10V

Vgs(th) (Max) @ Id

1.8V @ 56μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

77pF @ 25V

Current - Continuous Drain (Id) @ 25°C

110mA Ta

Gate Charge (Qg) (Max) @ Vgs

3.1nC @ 10V

Rise Time

3.1ns

Drive Voltage (Max Rds On,Min Rds On)

4.5V 10V

Vgs (Max)

±20V

Turn-Off Delay Time

13.7 ns

Continuous Drain Current (ID)

100mA

Turn On Delay Time

3.3 ns

Power Dissipation

360mW

Max Dual Supply Voltage

240V

Drain to Source Breakdown Voltage

240V

Dual Supply Voltage

240V

Max Junction Temperature (Tj)

150°C

Nominal Vgs

1.4 V

Feedback Cap-Max (Crss)

4.2 pF

Height

1.1mm

Width

3.05mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

FET Type

N-Channel

Lead Free

Lead Free

Infineon Technologies BSS138N E6908

In stock

SKU: BSS138N E6908-11
Manufacturer

Infineon Technologies

Series

SIPMOS®

Package / Case

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25℃

230mA Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

360mW Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2007

Mounting Type

Surface Mount

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Obsolete

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

3.5 Ω @ 230mA, 10V

Vgs(th) (Max) @ Id

1.4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

41pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 10V

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

RoHS Status

Non-RoHS Compliant

Infineon Technologies BSS138NH6433XTMA1

In stock

SKU: BSS138NH6433XTMA1-11
Manufacturer

Infineon Technologies

Turn Off Delay Time

6.7 ns

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

230mA Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

HTS Code

8541.21.00.95

Power Dissipation (Max)

360mW Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2009

Series

SIPMOS™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOGIC LEVEL COMPATIBLE

Contact Plating

Tin

Factory Lead Time

10 Weeks

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 10V

Terminal Form

GULL WING

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

2.3 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

3.5 Ω @ 230mA, 10V

Vgs(th) (Max) @ Id

1.4V @ 26μA

Input Capacitance (Ciss) (Max) @ Vds

41pF @ 25V

Rise Time

3ns

Drain to Source Voltage (Vdss)

60V

Terminal Position

DUAL

Vgs (Max)

±20V

Continuous Drain Current (ID)

230mA

Gate to Source Voltage (Vgs)

20V

DS Breakdown Voltage-Min

60V

Height

1mm

Length

2.9mm

Width

1.3mm

RoHS Status

ROHS3 Compliant

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Lead Free

Lead Free

Infineon Technologies BSS138NL6433HTMA1

In stock

SKU: BSS138NL6433HTMA1-11
Manufacturer

Infineon Technologies

Part Status

Obsolete

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Supplier Device Package

SOT-23-3

Current - Continuous Drain (Id) @ 25℃

230mA Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

360mW Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2011

Series

SIPMOS®

Mount

Surface Mount

Max Operating Temperature

150°C

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Min Operating Temperature

-55°C

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

3.5Ohm @ 230mA, 10V

Vgs(th) (Max) @ Id

1.4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

41pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 10V

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Continuous Drain Current (ID)

230mA

Input Capacitance

41pF

Rds On Max

3.5 Ω

RoHS Status

RoHS Compliant

Infineon Technologies BSS139H6327XTSA1

In stock

SKU: BSS139H6327XTSA1-11
Manufacturer

Infineon Technologies

JESD-609 Code

e3

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2006

Configuration

SINGLE WITH BUILT-IN DIODE

Factory Lead Time

10 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

SMD/SMT

ECCN Code

EAR99

Terminal Position

DUAL

Terminal Form

GULL WING

Pin Count

3

Number of Elements

1

Series

SIPMOS®

Number of Channels

1

Vgs (Max)

±20V

Continuous Drain Current (ID)

40mA

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

14 Ω @ 100μA, 10V

Vgs(th) (Max) @ Id

1V @ 56μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

76pF @ 25V

Current - Continuous Drain (Id) @ 25°C

100mA Ta

Gate Charge (Qg) (Max) @ Vgs

3.5nC @ 5V

Rise Time

5.4ns

Drive Voltage (Max Rds On,Min Rds On)

0V 10V

Power Dissipation-Max

360mW Ta

Power Dissipation

360mW

Threshold Voltage

-1.4V

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

250V

Dual Supply Voltage

250V

FET Feature

Depletion Mode

Nominal Vgs

-1.4 V

Width

3.05mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies BSS139L6906HTSA1

In stock

SKU: BSS139L6906HTSA1-11
Manufacturer

Infineon Technologies

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Supplier Device Package

SOT-23-3

Current - Continuous Drain (Id) @ 25℃

100mA Ta

Drive Voltage (Max Rds On, Min Rds On)

0V 10V

Power Dissipation (Max)

360mW Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2013

Series

SIPMOS®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

14Ohm @ 0.1mA, 10V

Vgs(th) (Max) @ Id

1V @ 56μA

Input Capacitance (Ciss) (Max) @ Vds

76pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

3.5nC @ 5V

Drain to Source Voltage (Vdss)

250V

Vgs (Max)

±20V

Continuous Drain Current (ID)

100mA

Input Capacitance

76pF

FET Feature

Depletion Mode

Rds On Max

14 Ω

RoHS Status

RoHS Compliant

Infineon Technologies BSS159NH6906XTSA1

In stock

SKU: BSS159NH6906XTSA1-11
Manufacturer

Infineon Technologies

Power Dissipation (Max)

360mW Ta

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

230mA Ta

Drive Voltage (Max Rds On, Min Rds On)

0V 10V

ECCN Code

EAR99

Factory Lead Time

10 Weeks

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2006

Series

SIPMOS®

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Number of Elements

1

HTS Code

8541.21.00.95

Gate Charge (Qg) (Max) @ Vgs

2.9nC @ 5V

Rise Time

2.9ns

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

3.5 Ω @ 160mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 26μA

Input Capacitance (Ciss) (Max) @ Vds

44pF @ 25V

Terminal Position

DUAL

Terminal Form

GULL WING

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Continuous Drain Current (ID)

230mA

Gate to Source Voltage (Vgs)

20V

DS Breakdown Voltage-Min

60V

FET Feature

Depletion Mode

Feedback Cap-Max (Crss)

5.9 pF

RoHS Status

ROHS3 Compliant

Infineon Technologies BSS159NL6327HTSA1

In stock

SKU: BSS159NL6327HTSA1-11
Manufacturer

Infineon Technologies

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Supplier Device Package

SOT-23-3

Current - Continuous Drain (Id) @ 25℃

230mA Ta

Drive Voltage (Max Rds On, Min Rds On)

0V 10V

Power Dissipation (Max)

360mW Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2006

Series

SIPMOS®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

3.5Ohm @ 160mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 26μA

Input Capacitance (Ciss) (Max) @ Vds

44pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

2.9nC @ 5V

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Continuous Drain Current (ID)

230mA

Input Capacitance

44pF

FET Feature

Depletion Mode

Rds On Max

3.5 Ω

RoHS Status

RoHS Compliant

Infineon Technologies BSS159NL6906HTSA1

In stock

SKU: BSS159NL6906HTSA1-11
Manufacturer

Infineon Technologies

ECCN Code

EAR99

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

230mA Ta

Number of Elements

1

Power Dissipation (Max)

360mW Ta

Drive Voltage (Max Rds On, Min Rds On)

0V 10V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2006

Series

SIPMOS®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Contact Plating

Tin

Factory Lead Time

17 Weeks

Gate Charge (Qg) (Max) @ Vgs

2.9nC @ 5V

Rise Time

2.9ns

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Reference Standard

AEC-Q101

Configuration

SINGLE WITH BUILT-IN DIODE

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

3.5 Ω @ 160mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 26μA

Input Capacitance (Ciss) (Max) @ Vds

44pF @ 25V

Terminal Form

GULL WING

Terminal Position

DUAL

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Continuous Drain Current (ID)

230mA

Gate to Source Voltage (Vgs)

20V

DS Breakdown Voltage-Min

60V

FET Feature

Depletion Mode

Feedback Cap-Max (Crss)

5 pF

Peak Reflow Temperature (Cel)

NOT SPECIFIED

RoHS Status

RoHS Compliant

Infineon Technologies BSS169L6327HTSA1

In stock

SKU: BSS169L6327HTSA1-11
Manufacturer

Infineon Technologies

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

Current - Continuous Drain (Id) @ 25℃

170mA Ta

Drive Voltage (Max Rds On, Min Rds On)

0V 10V

Power Dissipation (Max)

360mW Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2011

Series

SIPMOS®

Part Status

Obsolete

Mount

Surface Mount

Min Operating Temperature

-55°C

Max Operating Temperature

150°C

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id

1.8V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds

68pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

2.8nC @ 7V

Drain to Source Voltage (Vdss)

100V

Vgs (Max)

±20V

Continuous Drain Current (ID)

170mA

Input Capacitance

68pF

FET Feature

Depletion Mode

Rds On Max

6 Ω

RoHS Status

RoHS Compliant

Infineon Technologies BSS169L6906HTSA1

In stock

SKU: BSS169L6906HTSA1-11
Manufacturer

Infineon Technologies

Power Dissipation (Max)

360mW Ta

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

170mA Ta

Drive Voltage (Max Rds On, Min Rds On)

0V 10V

ECCN Code

EAR99

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2011

Series

SIPMOS®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Mount

Surface Mount

Contact Plating

Tin

Drain to Source Voltage (Vdss)

100V

Terminal Form

GULL WING

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

6 Ω @ 170mA, 10V

Vgs(th) (Max) @ Id

1.8V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds

68pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

2.8nC @ 7V

Rise Time

2.7ns

Vgs (Max)

±20V

Continuous Drain Current (ID)

170mA

Terminal Position

DUAL

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

0.17A

Drain-source On Resistance-Max

6Ohm

DS Breakdown Voltage-Min

100V

FET Feature

Depletion Mode

Feedback Cap-Max (Crss)

7 pF

Configuration

SINGLE WITH BUILT-IN DIODE

RoHS Status

RoHS Compliant