Showing 1177–1188 of 7598 results
Infineon Technologies BSS223PWH6327XTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-70, SOT-323 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2002 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Number of Elements |
1 |
| Part Status |
Active |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| HTS Code |
8541.21.00.95 |
| Voltage - Rated DC |
-20V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
-390mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Mount |
Surface Mount |
| Factory Lead Time |
10 Weeks |
| Drive Voltage (Max Rds On,Min Rds On) |
2.5V 4.5V |
| Element Configuration |
Single |
| Turn On Delay Time |
3.8 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
1.2 Ω @ 390mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 1.5μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
56pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
390mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
0.62nC @ 4.5V |
| Rise Time |
5ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Turn-Off Delay Time |
5.1 ns |
| Power Dissipation-Max |
250mW Ta |
| Continuous Drain Current (ID) |
390mA |
| Threshold Voltage |
-900mV |
| Gate to Source Voltage (Vgs) |
12V |
| Max Dual Supply Voltage |
-20V |
| Feedback Cap-Max (Crss) |
22 pF |
| Height |
800μm |
| Length |
2mm |
| Width |
1.25mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Contains Lead |
Infineon Technologies BSS314PEL6327HTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Supplier Device Package |
SOT-23-3 |
| Current - Continuous Drain (Id) @ 25℃ |
1.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
500mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| Mount |
Surface Mount |
| Max Operating Temperature |
150°C |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Min Operating Temperature |
-55°C |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
140mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 6.3μA |
| Input Capacitance (Ciss) (Max) @ Vds |
294pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
2.9nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
1.5A |
| Input Capacitance |
294pF |
| Rds On Max |
140 mΩ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BSS315PH6327XTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Pbfree Code |
yes |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| Operating Mode |
ENHANCEMENT MODE |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Pin Count |
3 |
| Number of Elements |
1 |
| Power Dissipation-Max |
500mW Ta |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Factory Lead Time |
10 Weeks |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
5 ns |
| Rds On (Max) @ Id, Vgs |
150m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 11μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
282pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
1.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
2.3nC @ 5V |
| Rise Time |
6.5ns |
| Drain to Source Voltage (Vdss) |
30V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Turn-Off Delay Time |
14.3 ns |
| Continuous Drain Current (ID) |
1.18A |
| Power Dissipation |
500mW |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
-30V |
| Feedback Cap-Max (Crss) |
84 pF |
| Height |
1mm |
| Length |
2.9mm |
| Width |
1.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
P-Channel |
| Lead Free |
Lead Free |
Infineon Technologies BSS316NH6327XTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Power Dissipation-Max |
500mW Ta |
| Factory Lead Time |
10 Weeks |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Part Status |
Active |
| Element Configuration |
Single |
| Fall Time (Typ) |
1 ns |
| Turn-Off Delay Time |
5.8 ns |
| Turn On Delay Time |
3.4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 1.4A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 3.7μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
94pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
1.4A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
0.6nC @ 5V |
| Rise Time |
2.3ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500mW |
| Continuous Drain Current (ID) |
1.4A |
| Threshold Voltage |
1.6V |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
30V |
| Drain to Source Breakdown Voltage |
30V |
| Feedback Cap-Max (Crss) |
7 pF |
| Height |
1.1mm |
| Length |
2.9mm |
| Width |
1.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BSS7728NL6327HTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Supplier Device Package |
SOT-23-3 |
| Current - Continuous Drain (Id) @ 25℃ |
200mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
360mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| Series |
SIPMOS® |
| Mount |
Surface Mount |
| Max Operating Temperature |
150°C |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Min Operating Temperature |
-55°C |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 26μA |
| Input Capacitance (Ciss) (Max) @ Vds |
56pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
1.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
200mA |
| Input Capacitance |
56pF |
| Rds On Max |
5 Ω |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BSS806NL6327HTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Supplier Device Package |
SOT-23-3 |
| Current - Continuous Drain (Id) @ 25℃ |
2.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 2.5V |
| Power Dissipation (Max) |
500mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| Mount |
Surface Mount |
| Max Operating Temperature |
150°C |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Min Operating Temperature |
-55°C |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
57mOhm @ 2.3A, 2.5V |
| Vgs(th) (Max) @ Id |
750mV @ 11μA |
| Input Capacitance (Ciss) (Max) @ Vds |
529pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
1.7nC @ 2.5V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Continuous Drain Current (ID) |
2.3A |
| Input Capacitance |
529pF |
| Rds On Max |
57 mΩ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BSS84PH6327XTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
SIPMOS® |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package |
SOT-23-3 |
| Current - Continuous Drain (Id) @ 25℃ |
170mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
360mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
8Ohm @ 170mA, 10V |
| Vgs(th) (Max) @ Id |
2V @ 20μA |
| Input Capacitance (Ciss) (Max) @ Vds |
19pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
1.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies BSS84PH6433XTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
8.6 ns |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
170mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Terminal Form |
GULL WING |
| Factory Lead Time |
10 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2002 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Power Dissipation (Max) |
360mW Ta |
| Number of Channels |
1 |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Power Dissipation |
360mW |
| Turn On Delay Time |
6.7 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8 Ω @ 170mA, 10V |
| Vgs(th) (Max) @ Id |
2V @ 20μA |
| Input Capacitance (Ciss) (Max) @ Vds |
19pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
1.5nC @ 10V |
| Rise Time |
16.2ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
20.5 ns |
| Continuous Drain Current (ID) |
-170mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
8Ohm |
| Drain to Source Breakdown Voltage |
-60V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.1mm |
| Length |
2.9mm |
| Width |
1.3mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSS84PL6327HTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| HTS Code |
8541.21.00.95 |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
170mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360mW Ta |
| Packaging |
Tape & Reel (TR) |
| Published |
2002 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rds On (Max) @ Id, Vgs |
8 Ω @ 170mA, 10V |
| Vgs(th) (Max) @ Id |
2V @ 20μA |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Reference Standard |
AEC-Q101 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Terminal Form |
GULL WING |
| Terminal Position |
DUAL |
| Input Capacitance (Ciss) (Max) @ Vds |
19pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
1.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
170mA |
| Drain Current-Max (Abs) (ID) |
0.17A |
| Drain-source On Resistance-Max |
12Ohm |
| DS Breakdown Voltage-Min |
60V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BSS84PWH6327XTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-70, SOT-323 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2000 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Element Configuration |
Single |
| Factory Lead Time |
10 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
-60V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
-150mA |
| Pin Count |
3 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
300mW Ta |
| Pbfree Code |
yes |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
20.5 ns |
| Turn-Off Delay Time |
8.6 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
8 Ω @ 150mA, 10V |
| Vgs(th) (Max) @ Id |
2V @ 20μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
19.1pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
150mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
1.5nC @ 10V |
| Rise Time |
16.2ns |
| Drain to Source Voltage (Vdss) |
60V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Power Dissipation |
300mW |
| Turn On Delay Time |
6.7 ns |
| Continuous Drain Current (ID) |
-150mA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
-60V |
| Drain-source On Resistance-Max |
8Ohm |
| Drain to Source Breakdown Voltage |
-60V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1mm |
| Length |
2mm |
| Width |
1.25mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BSS87H6327FTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
SIPMOS® |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
260mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1W Ta |
| Turn Off Delay Time |
17.6 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PDSO-F4 |
| Factory Lead Time |
8 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Pin Count |
4 |
| Published |
1997 |
| Number of Channels |
1 |
| Threshold Voltage |
1.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Power Dissipation |
1W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
3.7 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6 Ω @ 260mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 108μA |
| Input Capacitance (Ciss) (Max) @ Vds |
97pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
5.5nC @ 10V |
| Rise Time |
3.5ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
27.3 ns |
| Continuous Drain Current (ID) |
290mA |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Max Dual Supply Voltage |
240V |
| Drain Current-Max (Abs) (ID) |
0.26A |
| Drain-source On Resistance-Max |
6Ohm |
| Drain to Source Breakdown Voltage |
240V |
| Dual Supply Voltage |
240V |
| Nominal Vgs |
1.5 V |
| Height |
1.5mm |
| Length |
4.5mm |
| Width |
2.5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BSZ018NE2LSATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
23A Ta 40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 69W Tc |
| Terminal Form |
FLAT |
| Factory Lead Time |
18 Weeks |
| Published |
2013 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 12V |
| Pin Count |
8 |
| JESD-30 Code |
S-PDSO-F3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.1W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.8m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
39nC @ 10V |
| Rise Time |
4.4ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
23A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
25V |
| Drain-source On Resistance-Max |
0.0024Ohm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |