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An IGBT array, also known as an IGBT module, is a high-power semiconductor device that contains multiple Insulated Gate Bipolar Transistors (IGBTs) in a single package. These modules are designed to handle large amounts of power and are often used in industrial applications.
IGBT arrays or modules can contain multiple IGBTs along with diodes and other components. These components can be connected in various configurations, such as series or parallel, to handle different voltage and current levels. This makes IGBT modules a flexible solution for high-power applications.
The IGBTs in a module share a common gate driver, which controls the switching of the transistors. This helps to ensure that the transistors switch on and off in a coordinated manner, which is important for efficient operation.
IGBT modules are used in a variety of applications, including motor drives, power inverters for renewable energy systems, electric vehicles, and power grid systems. They are produced by several manufacturers, including Infineon Technologies, Mitsubishi Electric, Fuji Electric, and others.
Transistors - IGBTs - Arrays
IXYS FII24N170AH1
In stock
Manufacturer |
IXYS |
---|---|
Reach Compliance Code |
compliant |
Package / Case |
i4-Pac™-4, Isolated |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
18A |
Operating Temperature |
-55°C~150°C TJ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
5 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
UL RECOGNIZED |
Terminal Position |
SINGLE |
Mounting Type |
Through Hole |
JESD-30 Code |
R-PSIP-T5 |
Pin Count |
5 |
Configuration |
Half Bridge |
Power - Max |
140W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Current - Collector Cutoff (Max) |
100μA |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Turn On Time |
100 ns |
Vce(on) (Max) @ Vge, Ic |
6V @ 15V, 16A |
Turn Off Time-Nom (toff) |
275 ns |
IGBT Type |
NPT |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
2.4nF @ 25V |
RoHS Status |
RoHS Compliant |
IXYS FII24N17AH1
In stock
Manufacturer |
IXYS |
---|---|
Number of Elements |
2 |
Mounting Type |
Through Hole |
Package / Case |
i4-Pac™-5 |
Number of Pins |
5 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Published |
2005 |
Pbfree Code |
yes |
Part Status |
Active |
JESD-609 Code |
e1 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
5 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
UL RECOGNISED |
Max Power Dissipation |
140W |
Terminal Position |
SINGLE |
Pin Count |
5 |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Collector Emitter Breakdown Voltage |
1.7kV |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Power - Max |
140W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.7kV |
Max Collector Current |
18A |
Current - Collector Cutoff (Max) |
100μA |
Element Configuration |
Dual |
Configuration |
Half Bridge |
Input Capacitance |
2.4nF |
Turn On Time |
100 ns |
Vce(on) (Max) @ Vge, Ic |
6V @ 15V, 16A |
Turn Off Time-Nom (toff) |
275 ns |
IGBT Type |
NPT |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
2.4nF @ 25V |
Case Connection |
ISOLATED |
RoHS Status |
ROHS3 Compliant |
IXYS FII24N17AH1S
In stock
Manufacturer |
IXYS |
---|---|
Factory Lead Time |
16 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
i4-Pac™-5 |
Number of Pins |
5 |
Supplier Device Package |
ISOPLUS i4-PAC™ |
Published |
2005 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Max Power Dissipation |
140W |
Configuration |
Half Bridge |
Element Configuration |
Dual |
Power - Max |
140W |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.7kV |
Max Collector Current |
18A |
Current - Collector Cutoff (Max) |
100μA |
Collector Emitter Breakdown Voltage |
1.7kV |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Current - Collector (Ic) (Max) |
18A |
Input Capacitance |
2.4nF |
Vce(on) (Max) @ Vge, Ic |
6V @ 15V, 16A |
IGBT Type |
NPT |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
2.4nF @ 25V |
RoHS Status |
ROHS3 Compliant |
IXYS FII30-06D
In stock
Manufacturer |
IXYS |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
i4-Pac™-5 |
Number of Pins |
5 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Published |
2004 |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Power Dissipation |
100W |
Factory Lead Time |
32 Weeks |
Number of Terminations |
5 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
HIGH RELIABILITY |
Max Power Dissipation |
100W |
Terminal Position |
SINGLE |
Pin Count |
5 |
Number of Elements |
2 |
Configuration |
Half Bridge |
Element Configuration |
Dual |
Part Status |
Active |
Case Connection |
ISOLATED |
Turn On Time |
105 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 20A |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Turn-Off Delay Time |
300 ns |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
30A |
Current - Collector Cutoff (Max) |
600μA |
Collector Emitter Breakdown Voltage |
600V |
Collector Emitter Saturation Voltage |
1.9V |
Input Capacitance |
1.1nF |
Turn On Delay Time |
50 ns |
Transistor Application |
POWER CONTROL |
Turn Off Time-Nom (toff) |
330 ns |
IGBT Type |
NPT |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
1.1nF @ 25V |
VCEsat-Max |
2.4 V |
Height |
20.88mm |
Length |
19.91mm |
Width |
5.03mm |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IXYS FII30-12E
In stock
Manufacturer |
IXYS |
---|---|
Configuration |
Half Bridge |
Package / Case |
i4-Pac™-5 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Operating Temperature |
-55°C~150°C TJ |
Published |
2005 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
JESD-609 Code |
e1 |
Number of Terminations |
5 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
150W |
Terminal Position |
SINGLE |
Pin Count |
5 |
JESD-30 Code |
R-PSIP-T5 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
1.2nF |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.9V |
Max Collector Current |
33A |
Current - Collector Cutoff (Max) |
200μA |
Case Connection |
ISOLATED |
Element Configuration |
Dual |
Turn On Time |
310 ns |
Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 20A |
Turn Off Time-Nom (toff) |
495 ns |
IGBT Type |
NPT |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
1.2nF @ 25V |
Power - Max |
150W |
RoHS Status |
RoHS Compliant |
IXYS FII40-06D
In stock
Manufacturer |
IXYS |
---|---|
Pbfree Code |
yes |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
i4-Pac™-5 |
Number of Pins |
5 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Bulk |
Published |
2011 |
Number of Elements |
2 |
Factory Lead Time |
32 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
5 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
HIGH RELIABILITY |
Voltage - Rated DC |
600V |
Max Power Dissipation |
125W |
Terminal Position |
SINGLE |
Current Rating |
40A |
Pin Count |
5 |
JESD-609 Code |
e1 |
Configuration |
Half Bridge |
Turn On Time |
100 ns |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 25A |
Transistor Application |
POWER CONTROL |
Rise Time |
50ns |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
40A |
Current - Collector Cutoff (Max) |
600μA |
Collector Emitter Breakdown Voltage |
600V |
Input Capacitance |
1.6nF |
Element Configuration |
Dual |
Case Connection |
ISOLATED |
Turn Off Time-Nom (toff) |
310 ns |
IGBT Type |
NPT |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
1.6nF @ 25V |
VCEsat-Max |
2.2 V |
Height |
20.88mm |
Length |
19.91mm |
Width |
5.03mm |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IXYS FII50-12E
In stock
Manufacturer |
IXYS |
---|---|
Number of Terminations |
5 |
Package / Case |
i4-Pac™-5 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Published |
2003 |
JESD-609 Code |
e1 |
Part Status |
Obsolete |
Element Configuration |
Dual |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
200W |
Terminal Position |
SINGLE |
Pin Count |
5 |
JESD-30 Code |
R-PSIP-T5 |
Number of Elements |
2 |
Configuration |
Half Bridge |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Power - Max |
200W |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.6V |
Max Collector Current |
50A |
Current - Collector Cutoff (Max) |
400μA |
Collector Emitter Breakdown Voltage |
1.2kV |
Input Capacitance |
2nF |
Turn On Time |
135 ns |
Case Connection |
ISOLATED |
Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 30A |
Turn Off Time-Nom (toff) |
490 ns |
IGBT Type |
NPT |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
2nF @ 25V |
Transistor Application |
POWER CONTROL |
RoHS Status |
RoHS Compliant |
IXYS IXA20PG1200DHG-TRR
In stock
Manufacturer |
IXYS |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
9-SMD Module |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Configuration |
Half Bridge |
Power - Max |
130W |
Input |
Standard |
Current - Collector Cutoff (Max) |
125μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Current - Collector (Ic) (Max) |
32A |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 15A |
IGBT Type |
PT |
NTC Thermistor |
No |
RoHS Status |
ROHS3 Compliant |
IXYS IXA20PG1200DHG-TUB
In stock
Manufacturer |
IXYS |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
9-SMD Module |
Operating Temperature |
-55°C~150°C TJ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Configuration |
Half Bridge |
Power - Max |
130W |
Input |
Standard |
Current - Collector Cutoff (Max) |
125μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Current - Collector (Ic) (Max) |
32A |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 15A |
IGBT Type |
PT |
NTC Thermistor |
No |
RoHS Status |
ROHS3 Compliant |
IXYS IXA20PG1200DHGLB
In stock
Manufacturer |
IXYS |
---|---|
Case Connection |
ISOLATED |
Package / Case |
SMD/SMT |
Number of Pins |
9 |
Number of Elements |
2 |
Number of Terminations |
9 |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Pin Count |
9 |
Power Dissipation-Max |
130W |
Element Configuration |
Single |
Mount |
Surface Mount |
Polarity/Channel Type |
N-CHANNEL |
Transistor Application |
POWER CONTROL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
32A |
Collector Emitter Breakdown Voltage |
1.2kV |
Turn On Time |
110 ns |
Turn Off Time-Nom (toff) |
350 ns |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Height |
5.5mm |
Length |
25mm |
Width |
23mm |
RoHS Status |
RoHS Compliant |
IXYS IXA30PG1200DHG-TUB
In stock
Manufacturer |
IXYS |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
9-SMD Module |
Operating Temperature |
-55°C~150°C TJ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Configuration |
Half Bridge |
Power - Max |
150W |
Input |
Standard |
Current - Collector Cutoff (Max) |
2.1mA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Current - Collector (Ic) (Max) |
43A |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 25A |
IGBT Type |
PT |
NTC Thermistor |
No |
RoHS Status |
ROHS3 Compliant |
-
What are the applications of IGBT arrays?
IGBT arrays are used in a variety of applications, including motor drives, power inverters for renewable energy systems, electric vehicles, and power grid systems. -
What are the advantages of using IGBT arrays?
IGBT arrays can handle higher power levels than single IGBTs. They also offer flexibility in terms of voltage and current handling capabilities, as the IGBTs in the array can be connected in different configurations. -
How does an IGBT array work?
The IGBTs in an array share a common gate driver, which controls the switching of the transistors. When the gate voltage exceeds a certain threshold, the IGBTs turn on and allow current to flow. -
How to drive an IGBT array?
Driving an IGBT array involves applying a voltage to the gate terminal of the array. This voltage must be sufficient to exceed the gate threshold voltage for the IGBTs to turn on. However, care must be taken not to exceed the maximum gate-emitter voltage rating of the array, as this could damage the IGBTs. -
How to protect an IGBT array from damage?
Protection methods for IGBT arrays include using snubber circuits to protect against voltage spikes, using gate resistors to slow down the switching speed and reduce the risk of oscillations, and monitoring the device temperature to prevent overheating. -
What are the differences between an IGBT array and a single IGBT?
An IGBT array contains multiple IGBTs in one package and can handle higher power levels than a single IGBT. On the other hand, single IGBTs are typically used in lower power applications. -
Where can I buy an IGBT array?
IGBT arrays can be purchased from WT Electronics distributors. Some well-known manufacturers of IGBT arrays include Infineon Technologies, Mitsubishi Electric, Fuji Electric, Semikron, ON Semiconductor, Toshiba, Hitachi, ABB, STMicroelectronics, and Texas Instruments.