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An IGBT array, also known as an IGBT module, is a high-power semiconductor device that contains multiple Insulated Gate Bipolar Transistors (IGBTs) in a single package. These modules are designed to handle large amounts of power and are often used in industrial applications.

IGBT arrays or modules can contain multiple IGBTs along with diodes and other components. These components can be connected in various configurations, such as series or parallel, to handle different voltage and current levels. This makes IGBT modules a flexible solution for high-power applications.

The IGBTs in a module share a common gate driver, which controls the switching of the transistors. This helps to ensure that the transistors switch on and off in a coordinated manner, which is important for efficient operation.

IGBT modules are used in a variety of applications, including motor drives, power inverters for renewable energy systems, electric vehicles, and power grid systems. They are produced by several manufacturers, including Infineon Technologies, Mitsubishi Electric, Fuji Electric, and others.

Transistors - IGBTs - Arrays

IXYS FII24N170AH1

In stock

SKU: FII24N170AH1-9
Manufacturer

IXYS

Reach Compliance Code

compliant

Package / Case

i4-Pac™-4, Isolated

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

18A

Operating Temperature

-55°C~150°C TJ

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

UL RECOGNIZED

Terminal Position

SINGLE

Mounting Type

Through Hole

JESD-30 Code

R-PSIP-T5

Pin Count

5

Configuration

Half Bridge

Power - Max

140W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Current - Collector Cutoff (Max)

100μA

Voltage - Collector Emitter Breakdown (Max)

1700V

Turn On Time

100 ns

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 16A

Turn Off Time-Nom (toff)

275 ns

IGBT Type

NPT

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

2.4nF @ 25V

RoHS Status

RoHS Compliant

IXYS FII24N17AH1

In stock

SKU: FII24N17AH1-9
Manufacturer

IXYS

Number of Elements

2

Mounting Type

Through Hole

Package / Case

i4-Pac™-5

Number of Pins

5

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Published

2005

Pbfree Code

yes

Part Status

Active

JESD-609 Code

e1

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

UL RECOGNISED

Max Power Dissipation

140W

Terminal Position

SINGLE

Pin Count

5

Mount

Through Hole

Factory Lead Time

14 Weeks

Collector Emitter Breakdown Voltage

1.7kV

Voltage - Collector Emitter Breakdown (Max)

1700V

Power - Max

140W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

18A

Current - Collector Cutoff (Max)

100μA

Element Configuration

Dual

Configuration

Half Bridge

Input Capacitance

2.4nF

Turn On Time

100 ns

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 16A

Turn Off Time-Nom (toff)

275 ns

IGBT Type

NPT

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

2.4nF @ 25V

Case Connection

ISOLATED

RoHS Status

ROHS3 Compliant

IXYS FII24N17AH1S

In stock

SKU: FII24N17AH1S-9
Manufacturer

IXYS

Factory Lead Time

16 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

i4-Pac™-5

Number of Pins

5

Supplier Device Package

ISOPLUS i4-PAC™

Published

2005

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Max Power Dissipation

140W

Configuration

Half Bridge

Element Configuration

Dual

Power - Max

140W

Input

Standard

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

18A

Current - Collector Cutoff (Max)

100μA

Collector Emitter Breakdown Voltage

1.7kV

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

18A

Input Capacitance

2.4nF

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 16A

IGBT Type

NPT

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

2.4nF @ 25V

RoHS Status

ROHS3 Compliant

IXYS FII30-06D

In stock

SKU: FII30-06D-9
Manufacturer

IXYS

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

i4-Pac™-5

Number of Pins

5

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Published

2004

JESD-609 Code

e1

Pbfree Code

yes

Power Dissipation

100W

Factory Lead Time

32 Weeks

Number of Terminations

5

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

HIGH RELIABILITY

Max Power Dissipation

100W

Terminal Position

SINGLE

Pin Count

5

Number of Elements

2

Configuration

Half Bridge

Element Configuration

Dual

Part Status

Active

Case Connection

ISOLATED

Turn On Time

105 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 20A

Polarity/Channel Type

N-CHANNEL

Input

Standard

Turn-Off Delay Time

300 ns

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

30A

Current - Collector Cutoff (Max)

600μA

Collector Emitter Breakdown Voltage

600V

Collector Emitter Saturation Voltage

1.9V

Input Capacitance

1.1nF

Turn On Delay Time

50 ns

Transistor Application

POWER CONTROL

Turn Off Time-Nom (toff)

330 ns

IGBT Type

NPT

NTC Thermistor

No

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

1.1nF @ 25V

VCEsat-Max

2.4 V

Height

20.88mm

Length

19.91mm

Width

5.03mm

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

IXYS FII30-12E

In stock

SKU: FII30-12E-9
Manufacturer

IXYS

Configuration

Half Bridge

Package / Case

i4-Pac™-5

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Operating Temperature

-55°C~150°C TJ

Published

2005

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

JESD-609 Code

e1

Number of Terminations

5

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

150W

Terminal Position

SINGLE

Pin Count

5

JESD-30 Code

R-PSIP-T5

Mounting Type

Through Hole

Mount

Through Hole

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

1.2nF

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.9V

Max Collector Current

33A

Current - Collector Cutoff (Max)

200μA

Case Connection

ISOLATED

Element Configuration

Dual

Turn On Time

310 ns

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 20A

Turn Off Time-Nom (toff)

495 ns

IGBT Type

NPT

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

1.2nF @ 25V

Power - Max

150W

RoHS Status

RoHS Compliant

IXYS FII40-06D

In stock

SKU: FII40-06D-9
Manufacturer

IXYS

Pbfree Code

yes

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

i4-Pac™-5

Number of Pins

5

Weight

6.500007g

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Bulk

Published

2011

Number of Elements

2

Factory Lead Time

32 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

HIGH RELIABILITY

Voltage - Rated DC

600V

Max Power Dissipation

125W

Terminal Position

SINGLE

Current Rating

40A

Pin Count

5

JESD-609 Code

e1

Configuration

Half Bridge

Turn On Time

100 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 25A

Transistor Application

POWER CONTROL

Rise Time

50ns

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Current - Collector Cutoff (Max)

600μA

Collector Emitter Breakdown Voltage

600V

Input Capacitance

1.6nF

Element Configuration

Dual

Case Connection

ISOLATED

Turn Off Time-Nom (toff)

310 ns

IGBT Type

NPT

NTC Thermistor

No

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

1.6nF @ 25V

VCEsat-Max

2.2 V

Height

20.88mm

Length

19.91mm

Width

5.03mm

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

IXYS FII50-12E

In stock

SKU: FII50-12E-9
Manufacturer

IXYS

Number of Terminations

5

Package / Case

i4-Pac™-5

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Published

2003

JESD-609 Code

e1

Part Status

Obsolete

Element Configuration

Dual

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

200W

Terminal Position

SINGLE

Pin Count

5

JESD-30 Code

R-PSIP-T5

Number of Elements

2

Configuration

Half Bridge

Mounting Type

Through Hole

Mount

Through Hole

Voltage - Collector Emitter Breakdown (Max)

1200V

Power - Max

200W

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.6V

Max Collector Current

50A

Current - Collector Cutoff (Max)

400μA

Collector Emitter Breakdown Voltage

1.2kV

Input Capacitance

2nF

Turn On Time

135 ns

Case Connection

ISOLATED

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 30A

Turn Off Time-Nom (toff)

490 ns

IGBT Type

NPT

NTC Thermistor

No

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

2nF @ 25V

Transistor Application

POWER CONTROL

RoHS Status

RoHS Compliant

IXYS IXA20PG1200DHG-TRR

In stock

SKU: IXA20PG1200DHG-TRR-9
Manufacturer

IXYS

Mounting Type

Surface Mount

Package / Case

9-SMD Module

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Configuration

Half Bridge

Power - Max

130W

Input

Standard

Current - Collector Cutoff (Max)

125μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

32A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 15A

IGBT Type

PT

NTC Thermistor

No

RoHS Status

ROHS3 Compliant

IXYS IXA20PG1200DHG-TUB

In stock

SKU: IXA20PG1200DHG-TUB-9
Manufacturer

IXYS

Mounting Type

Surface Mount

Package / Case

9-SMD Module

Operating Temperature

-55°C~150°C TJ

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Configuration

Half Bridge

Power - Max

130W

Input

Standard

Current - Collector Cutoff (Max)

125μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

32A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 15A

IGBT Type

PT

NTC Thermistor

No

RoHS Status

ROHS3 Compliant

IXYS IXA20PG1200DHGLB

In stock

SKU: IXA20PG1200DHGLB-9
Manufacturer

IXYS

Case Connection

ISOLATED

Package / Case

SMD/SMT

Number of Pins

9

Number of Elements

2

Number of Terminations

9

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Terminal Position

DUAL

Terminal Form

GULL WING

Pin Count

9

Power Dissipation-Max

130W

Element Configuration

Single

Mount

Surface Mount

Polarity/Channel Type

N-CHANNEL

Transistor Application

POWER CONTROL

Input

Standard

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

32A

Collector Emitter Breakdown Voltage

1.2kV

Turn On Time

110 ns

Turn Off Time-Nom (toff)

350 ns

NTC Thermistor

No

Gate-Emitter Voltage-Max

20V

Height

5.5mm

Length

25mm

Width

23mm

RoHS Status

RoHS Compliant

IXYS IXA20PG1200DHGLB-TRR

In stock

SKU: IXA20PG1200DHGLB-TRR-9
Manufacturer

IXYS

Mount

Surface Mount

Package / Case

SMD/SMT

Power Dissipation-Max

130W

Input

Standard

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

32A

Collector Emitter Breakdown Voltage

1.2kV

NTC Thermistor

No

RoHS Status

RoHS Compliant

IXYS IXA30PG1200DHG-TUB

In stock

SKU: IXA30PG1200DHG-TUB-9
Manufacturer

IXYS

Mounting Type

Surface Mount

Package / Case

9-SMD Module

Operating Temperature

-55°C~150°C TJ

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Configuration

Half Bridge

Power - Max

150W

Input

Standard

Current - Collector Cutoff (Max)

2.1mA

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

43A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 25A

IGBT Type

PT

NTC Thermistor

No

RoHS Status

ROHS3 Compliant

  1. What are the applications of IGBT arrays?
    IGBT arrays are used in a variety of applications, including motor drives, power inverters for renewable energy systems, electric vehicles, and power grid systems.

  2. What are the advantages of using IGBT arrays?
    IGBT arrays can handle higher power levels than single IGBTs. They also offer flexibility in terms of voltage and current handling capabilities, as the IGBTs in the array can be connected in different configurations.

  3. How does an IGBT array work?
    The IGBTs in an array share a common gate driver, which controls the switching of the transistors. When the gate voltage exceeds a certain threshold, the IGBTs turn on and allow current to flow.

  4. How to drive an IGBT array?
    Driving an IGBT array involves applying a voltage to the gate terminal of the array. This voltage must be sufficient to exceed the gate threshold voltage for the IGBTs to turn on. However, care must be taken not to exceed the maximum gate-emitter voltage rating of the array, as this could damage the IGBTs.

  5. How to protect an IGBT array from damage?
    Protection methods for IGBT arrays include using snubber circuits to protect against voltage spikes, using gate resistors to slow down the switching speed and reduce the risk of oscillations, and monitoring the device temperature to prevent overheating.

  6. What are the differences between an IGBT array and a single IGBT?
    An IGBT array contains multiple IGBTs in one package and can handle higher power levels than a single IGBT. On the other hand, single IGBTs are typically used in lower power applications.

  7. Where can I buy an IGBT array?
    IGBT arrays can be purchased from WT Electronics distributors. Some well-known manufacturers of IGBT arrays include Infineon Technologies, Mitsubishi Electric, Fuji Electric, Semikron, ON Semiconductor, Toshiba, Hitachi, ABB, STMicroelectronics, and Texas Instruments.