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Insulated Gate Bipolar Transistors (IGBTs) are a type of transistor that are widely used in power electronics. They combine the simple gate-drive characteristics of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) with the high-current and low-saturation-voltage capability of bipolar transistors. This makes IGBTs ideal for many high voltage and high current applications where low conduction losses are required.
Aptina NXH80T120L2Q0S1G
In stock
| Manufacturer |
Aptina |
|---|---|
| Series |
Advanced Power TOPLED® |
| Package / Case |
6-SMD, J-Lead |
| Supplier Device Package |
SMD |
| Thermal Resistance of Package |
40°C/W |
| Height - Seated (Max) |
0.083 (2.10mm) |
| Mfr |
OSRAM Opto (ams OSRAM) |
| Product Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Voltage - Forward (Vf) (Typ) |
3.3V |
| Color |
White, Warm |
| Viewing Angle |
120° |
| Current - Test |
140mA |
| Lumens/Watt @ Current - Test |
52 lm/W |
| CCT (K) |
3500K |
| CRI (Color Rendering Index) |
80 |
| Current - Max |
250mA |
| Flux @ 25°C, Current - Test |
24lm (Typ) |
Atmel (Microchip Technology) APT100GT120JU2
In stock
| Manufacturer |
Atmel (Microchip Technology) |
|---|---|
| Package / Case |
SOT-227-4 |
| Mounting Style |
Chassis Mount |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Tradename |
ISOTOP |
| Packaging |
Tube |
| Configuration |
Single |
| Operating Temperature Range |
– 55 C to + 150 C |
| Height |
9.6 mm |
| Length |
38.2 mm |
| Width |
25.4 mm |
Atmel (Microchip Technology) APT150GN120J
In stock
| Manufacturer |
Atmel (Microchip Technology) |
|---|---|
| Package / Case |
SOT-227-4 |
| Mounting Style |
Chassis Mount |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Tradename |
ISOTOP |
| Packaging |
Tube |
| Configuration |
Single |
| Operating Temperature Range |
– 55 C to + 150 C |
| Height |
9.6 mm |
| Length |
38.2 mm |
| Width |
25.4 mm |
1. What are the components of an IGBT?
An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch. The three terminals are called the Emitter, Collector, and Gate. The IGBT consists of four alternating layers (P-N-P-N) that are combined to form the device. The Gate terminal, which modulates the device, is insulated by an oxide film.
2. Where are IGBT modules used?
IGBT modules are used in a variety of high-power applications. These include:
- Variable Frequency Drives (VFDs): These devices control the speed and torque of AC motors in many industrial applications.
- Electric Vehicles (EVs): IGBT modules are used in the power electronics of EVs to manage the high power levels required.
- Power Supplies: IGBT modules are used in switch-mode power supplies and uninterruptible power supplies to improve efficiency and reduce heat.
- Renewable Energy Systems: IGBT modules are used in inverters for solar and wind power systems to convert DC power to AC power.
- Railway Traction: IGBTs are used in electric and diesel-electric locomotives to control motor speed.
3. What are the manufacturers of IGBT transistor modules?
Several companies manufacture IGBT modules. Some of the most well-known include Infineon Technologies, Mitsubishi Electric, Fuji Electric, Semikron, ON Semiconductor, Toshiba, Hitachi, ABB (Asea Brown Boveri), STMicroelectronics, and Texas Instruments. These companies are recognized for their high-quality products and are top choices for IGBT modules in various applications.