Showing 1285–1296 of 2118 results
Microsemi Corporation APT100GF60JU3
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Package / Case |
ISOTOP |
| Number of Pins |
4 |
| Weight |
30.000004g |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Published |
2006 |
| Pbfree Code |
yes |
| Pin Count |
4 |
| Part Status |
Obsolete |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Additional Feature |
AVALANCHE RATED |
| Max Power Dissipation |
416W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Mounting Type |
Chassis Mount |
| Mount |
Chassis Mount, Screw |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 100A |
| Case Connection |
ISOLATED |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
120A |
| Current - Collector Cutoff (Max) |
100μA |
| Input Capacitance |
4.3nF |
| Turn On Time |
51 ns |
| Turn Off Time-Nom (toff) |
210 ns |
| IGBT Type |
NPT |
| Configuration |
Single |
| NTC Thermistor |
No |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
4.3nF @ 25V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Height |
9.6mm |
| Length |
38.2mm |
| Width |
25.4mm |
| Transistor Application |
POWER CONTROL |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APT100GLQ65JU3
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Configuration |
Single Chopper |
| Package / Case |
SOT-227-4, miniBLOC |
| Current-Collector (Ic) (Max) |
165A |
| Operating Temperature |
-55°C~175°C |
| Published |
2012 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Chassis Mount |
| Input |
Standard |
| Power - Max |
430W |
| Current - Collector Cutoff (Max) |
50μA |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 1000A |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Input Capacitance (Cies) @ Vce |
6.1nF @ 25V |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APT100GN120J
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Terminal Form |
UNSPECIFIED |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Weight |
30.000004g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Published |
1999 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
HIGH RELIABILITY |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
446W |
| Terminal Position |
UPPER |
| Mount |
Chassis Mount, Screw |
| Factory Lead Time |
24 Weeks |
| Turn On Time |
100 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 100A |
| Case Connection |
ISOLATED |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
153A |
| Current - Collector Cutoff (Max) |
100μA |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Input Capacitance |
6.5nF |
| Pin Count |
4 |
| Current Rating |
153A |
| Turn Off Time-Nom (toff) |
935 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Gate-Emitter Voltage-Max |
30V |
| Input Capacitance (Cies) @ Vce |
6.5nF @ 25V |
| Height |
9.6mm |
| Length |
38.2mm |
| Width |
25.4mm |
| RoHS Status |
RoHS Compliant |
| Configuration |
Single |
| Lead Free |
Lead Free |
Microsemi Corporation APT100GN120JDQ4
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Pin Count |
4 |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Published |
1999 |
| Pbfree Code |
yes |
| Operating Temperature |
-55°C~150°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
446W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Mount |
Chassis Mount, Screw |
| Factory Lead Time |
29 Weeks |
| Input Capacitance |
6.5nF |
| Turn On Time |
100 ns |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
153A |
| Current - Collector Cutoff (Max) |
200μA |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Case Connection |
ISOLATED |
| Configuration |
Single |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 100A |
| Turn Off Time-Nom (toff) |
935 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Gate-Emitter Voltage-Max |
30V |
| Input Capacitance (Cies) @ Vce |
6.5nF @ 25V |
| VCEsat-Max |
2.1 V |
| Power - Max |
446W |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APT100GT120JR
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
1999 |
| Mount |
Chassis Mount, Screw |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Pin Count |
4 |
| Factory Lead Time |
24 Weeks |
| Series |
Thunderbolt IGBT® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Max Power Dissipation |
570W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Configuration |
Single |
| Input Capacitance |
6.7nF |
| Turn On Time |
150 ns |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
123A |
| Current - Collector Cutoff (Max) |
100μA |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Case Connection |
ISOLATED |
| Power - Max |
570W |
| Vce(on) (Max) @ Vge, Ic |
3.7V @ 15V, 100A |
| Turn Off Time-Nom (toff) |
747 ns |
| IGBT Type |
NPT |
| NTC Thermistor |
No |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
6.7nF @ 25V |
| VCEsat-Max |
3.7 V |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APT100GT60JR
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Terminal Form |
UNSPECIFIED |
| Mounting Type |
Chassis Mount |
| Package / Case |
ISOTOP |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Published |
1999 |
| Series |
Thunderbolt IGBT® |
| Operating Temperature |
-55°C~150°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Additional Feature |
UL RECOGNIZED |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
500W |
| Terminal Position |
UPPER |
| Mount |
Chassis Mount, Screw |
| Factory Lead Time |
24 Weeks |
| Input Capacitance |
5.15nF |
| Turn On Time |
115 ns |
| Case Connection |
ISOLATED |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
148A |
| Current - Collector Cutoff (Max) |
25μA |
| Pin Count |
4 |
| Current Rating |
148A |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 100A |
| Turn Off Time-Nom (toff) |
450 ns |
| IGBT Type |
NPT |
| NTC Thermistor |
No |
| Gate-Emitter Voltage-Max |
30V |
| Input Capacitance (Cies) @ Vce |
5.15nF @ 25V |
| RoHS Status |
RoHS Compliant |
| Configuration |
Single |
| Lead Free |
Lead Free |
Microsemi Corporation APT100GT60JRDQ4
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
2001 |
| Mounting Type |
Chassis Mount |
| Package / Case |
ISOTOP |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Pin Count |
4 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
Thunderbolt IGBT® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Max Power Dissipation |
500W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Mount |
Chassis Mount, Screw |
| Factory Lead Time |
25 Weeks |
| Input Capacitance |
5.15nF |
| Case Connection |
ISOLATED |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
148A |
| Current - Collector Cutoff (Max) |
50μA |
| Turn On Time |
115 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 100A |
| Configuration |
Single |
| Turn Off Time-Nom (toff) |
450 ns |
| IGBT Type |
NPT |
| NTC Thermistor |
No |
| Gate-Emitter Voltage-Max |
30V |
| Input Capacitance (Cies) @ Vce |
5.15nF @ 25V |
| RoHS Status |
RoHS Compliant |
| Power - Max |
500W |
| Lead Free |
Lead Free |
Microsemi Corporation APT150GN60J
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
1999 |
| Mount |
Chassis Mount, Screw |
| Mounting Type |
Chassis Mount |
| Package / Case |
ISOTOP |
| Number of Pins |
4 |
| Weight |
30.000004g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Turn Off Delay Time |
430 ns |
| Terminal Form |
UNSPECIFIED |
| Factory Lead Time |
24 Weeks |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
536W |
| Terminal Position |
UPPER |
| Operating Temperature |
-55°C~175°C TJ |
| Current Rating |
220A |
| Turn On Time |
154 ns |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 150A |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
44 ns |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
220A |
| Current - Collector Cutoff (Max) |
25μA |
| Input Capacitance |
9.2nF |
| Pin Count |
4 |
| Configuration |
Single |
| Turn Off Time-Nom (toff) |
575 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Gate-Emitter Voltage-Max |
30V |
| Input Capacitance (Cies) @ Vce |
9.2nF @ 25V |
| Height |
9.6mm |
| Length |
38.2mm |
| Width |
25.4mm |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT200GN60J
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Terminal Form |
UNSPECIFIED |
| Mounting Type |
Chassis Mount |
| Package / Case |
ISOTOP |
| Number of Pins |
4 |
| Weight |
30.000004g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Published |
1999 |
| JESD-609 Code |
e1 |
| Operating Temperature |
-55°C~175°C TJ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Power Dissipation |
682W |
| Terminal Position |
UPPER |
| Mount |
Chassis Mount, Screw |
| Factory Lead Time |
24 Weeks |
| Turn On Time |
75 ns |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 200A |
| Power - Max |
682W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
283A |
| Current - Collector Cutoff (Max) |
25μA |
| Input Capacitance |
14.1nF |
| Configuration |
Single |
| Pin Count |
4 |
| Turn Off Time-Nom (toff) |
1210 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
14.1nF @ 25V |
| Height |
9.6mm |
| Length |
38.2mm |
| Width |
25.4mm |
| Case Connection |
ISOLATED |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APT200GT60JR
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Chassis Mount, Screw |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Terminal Position |
UPPER |
| Factory Lead Time |
24 Weeks |
| Published |
1999 |
| Series |
Thunderbolt IGBT® |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Max Power Dissipation |
500W |
| Number of Elements |
1 |
| Terminal Form |
UNSPECIFIED |
| Max Collector Current |
195A |
| Current - Collector Cutoff (Max) |
25μA |
| Case Connection |
ISOLATED |
| Power - Max |
500W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Pin Count |
4 |
| Configuration |
Single |
| Input Capacitance |
8.65nF |
| Turn On Time |
228 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 200A |
| Turn Off Time-Nom (toff) |
1232 ns |
| IGBT Type |
NPT |
| NTC Thermistor |
No |
| Input Capacitance (Cies) @ Vce |
8.65nF @ 25V |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APT30GF60JU2
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Package / Case |
ISOTOP |
| Number of Pins |
4 |
| Weight |
30.000004g |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Published |
2006 |
| Pbfree Code |
yes |
| Pin Count |
4 |
| Part Status |
Obsolete |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Additional Feature |
AVALANCHE RATED |
| Max Power Dissipation |
192W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Mounting Type |
Chassis Mount |
| Mount |
Chassis Mount, Screw |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 30A |
| Case Connection |
ISOLATED |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
58A |
| Current - Collector Cutoff (Max) |
40μA |
| Input Capacitance |
1.85nF |
| Turn On Time |
42 ns |
| Turn Off Time-Nom (toff) |
306 ns |
| IGBT Type |
NPT |
| Configuration |
Single |
| NTC Thermistor |
No |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
1.85nF @ 25V |
| VCEsat-Max |
2.5 V |
| Height |
9.6mm |
| Length |
38.2mm |
| Width |
25.4mm |
| Transistor Application |
POWER CONTROL |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APT30GF60JU3
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Weight |
30.000004g |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Published |
2004 |
| Pbfree Code |
yes |
| Pin Count |
4 |
| Part Status |
Obsolete |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Additional Feature |
AVALANCHE RATED |
| Max Power Dissipation |
192W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Mounting Type |
Chassis Mount |
| Mount |
Chassis Mount, Screw |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 30A |
| Case Connection |
ISOLATED |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
58A |
| Current - Collector Cutoff (Max) |
40μA |
| Input Capacitance |
1.85nF |
| Turn On Time |
42 ns |
| Turn Off Time-Nom (toff) |
306 ns |
| IGBT Type |
NPT |
| Configuration |
Single |
| NTC Thermistor |
No |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
1.85nF @ 25V |
| VCEsat-Max |
2.5 V |
| Height |
9.6mm |
| Length |
38.2mm |
| Width |
25.4mm |
| Transistor Application |
POWER CONTROL |
| RoHS Status |
RoHS Compliant |